350JIS Search Results

Contextual Info: KSA1142 PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER HIGH FREQENCY POWER AMPLIFIER TO-126 • Complement to KSC2682 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage Characteristic VcB O Symbol - 180 V Collector-Emitter Voltage

Contextual Info: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR KSB794/795 AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS C haracteristic Collector- Base Voltage Symbol : KSB794 : KSB795 Collector- Emitter Voltage : KSB794 Rating Unit

ksd transistor

Contextual Info: KSB744/744A PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • C om plem ent to KSD 794/KSD 794A T O -126 ABSOLUTE MAXIMUM RATINGS R a tin g U n it C ollector Base Voltage C h a ra c te ris tic VcBO S ym bol -70 V C ollector Em itter Voltage : KSB744

Contextual Info: KSC5054 NPN EPITAXIAL SILICON TRANSISTOR HIGH SPEED HIGH VOLTAGE SWITCHING INDUSTRIAL USE l-PACK ABSOLUTE MAXIMUM RATINGS R atin g U n it C ollector Base Voltage C h a ra c te ris tic VcBO S ym bol 500 V C ollector Em itter Voltage VcEO 400 Em itter Base Voltage

transistor P33

Abstract: KSC2749 KSC2690 KSC2690A 3a npn to126 transistor
Contextual Info: SAMSUNG SEMICONDUCTOR INC KSC2690/2690A 14E D j T 'im m a 0007S7G T NPN EPITAXIAL SILICON TRANSISTOR T - 3 3 - o J AUDIO FREQUENCY, HIGH FREQUENCY POWER AMPLIFIER • Complement to KSA1220/KSA1220A ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic i Symbol ' Rating

NPN Transistor 10A 400V

Abstract: KSC2752 L 10mH TS 4142 KSC2751 400V 10A NPN transistor
Contextual Info: ¡SAMSUNG SEMICONDUCTOR INC KSC2751 " 1«4E 0 | 7^^4145 0 0 0 7 5 7 b 0 | NPN EPITAXIAL SILICON TRANSISTOR " : ; rT~33 -is HIGH SPEED, HIGH CURRENT SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Rating ' Sym bol Collector-Base Voltage

m6376

Abstract: oki m6376 msm6376 J3E diode oki msm6376 oki voice synthesizer msm6375 diode i0-i6 7b424 oscV16 ADPCM SPEECH SYNTHESIZER LSIs
Contextual Info: O K I Semiconductor MSM6376_ A D P C M S P EE C H S Y N TH E S IZE R W ITH EXTERNAL R O M G ENER AL D ES C R IP TIO N MSM6376 is a tw o-channel m ixing ADPCM speech synthesizer LSI using u p to 16 M-bit external speech data storage, such as ROM,

KSA642

Abstract: KSD227
Contextual Info: KSA642 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER • Com plem ent to KSD227 • C ollector Dissipation P c =400mW ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Sym bol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Contextual Info: KSD1589 NPN SILICON DARLINGTON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE T O -22 0 F • C om plem ent to KSB1098 ABSOLUTE MAXIMUM RATINGS R a tin g U n it C ollector Base Voltage C h a ra c te ris tic VcBO S ym bol 150 V

Contextual Info: KSC2752 NPN EPITAXIAL SILICON TRANSISTOR HIGH SPEED, HIGH VOLTAGE SWICHING INDUSTRIAL USE TO -126 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector- Base Voltage Characteristic VcBO Symbol 500 V Collector-Emitter Voltage VcEO 400 V Emitter- Base Voltage V ebo

Contextual Info: KSB1098 PNP SILICON DARLINGTON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE TO -22 0 F • C om plem ent to KSD 1589 ABSOLUTE MAXIMUM RATINGS R a tin g U n it C ollector Base Voltage C h a ra c te ris tic VcB O S ym bol -1 0 0

BD139 time

Abstract: bd140 Complement BD136
Contextual Info: BD136/138/140 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD135, BD137 and BD139 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Collector Base Voltage : BD136 : BD138 : BD140 Collector Emitter Voltage : BD136

Contextual Info: KSB1097 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE TO-220F • Complement to KSD1588 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector Base Voltage C haracteristic VcBO Symbol -8 0 V Collector Emitter Voltage

Contextual Info: IBM0116400 IBM0116400M IBM0116400B IBM0116400P 4M x 4 12/10 DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)

Contextual Info: IB M 0 1 1 6 1 6 0 IB M 0 1 1 6 1 6 0 B IB M 0 1 1 6 1 6 0 M IB M 0 1 1 6 1 6 0 P 1 M x 16 12/8 DRAM Features • 1,048,576 word by 16 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSC3569 HIGH SPEED SWITCHING LOW COLLECTOR SATURATION VOLTAGE SPECIFIED OF REVERSE BIASED SOA WITH INDUCTIVE LOADS TO-220F ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Rating U nit Collector Base Voltage VcBO 500 V Collector Emitter Voltage

Contextual Info: KSA1220/1220A PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER HIGH FREQUENCY POWER AMPLIFIER TO -126 • Complement to KSC2690/KSC2690A ABSOLUTE MAXIMUM RATINGS C haracteristic Collector-Base Voltage Symbol : KAS1220 VcB O : KAS1220A Collector-Emitter Voltage

2690A TRANSISTOR

Contextual Info: KSC2690/2690A NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY, HIGH FREQUENCY POW ER AMPLIFIER * C om plem ent to KSA1220/KSA 1220A ABSOLUTE MAXIMUM RATINGS C h a ra c te ris tic C ollector-Base Voltage S ym bol : KSC2690 VcBO : KSC 2690A C ollector- E m itter Voltage : KSC2690

Contextual Info: KSD882 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING T O -126 • C om plem ent to KSB772 ABSOLUTE MAXIMUM RATINGS C h a ra c te ris tic Sym bol R a tin g U n it C ollector- Base Voltage V cB O 40 V C ollector-E m itter Voltage

Contextual Info: IBM0116165 IBM0116165M IBM0116165B IBM0116165P 1 M x 16 12/8 EDO DRAM Features • 1,048,576 word by 16 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)

pnp high emitter base voltage 15 volt

Abstract: KSA1220 KSA1142 KSA1220A KSC2682 KSC2690 KSC2690A
Contextual Info: SAMSUNG S E M I C O N D U C T O R . INC KSA1142 14E D | ?Tfc,m 42 00074^4 T PNP EPITAXIAL SILICON TRANSISTOR T ~ AUDIO FREQUENCY POWER AMPLIFIER HIGH FREQUENCY POWER AMPLIFIER 1 3 - / 7 • Complement to KSC2682 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic

TS 4142

Abstract: 18Oi KSC2517 KSC2518
Contextual Info: SAMSUNG SEMICONDUCTOR INC KSC2517 14E D 7 ‘ì t m 4 E GDD7SSÖ 1 | NPN EXITAXIAL SILICON TRANSISTOR r - 3 s ~ o f HIGH S P E E D SWITCHING' T0*220 INDUSTRIAL USE A B S O L U T E MAXIMUM RATINGS (Ta=25°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: KSD794/794A NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • Complement to KSB744/KSB744A TO -126 ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Rating Unit Collector- Base Voltage VcB O 70 V Collector-Emitter Voltage : KSD794 VcEO 45

Contextual Info: KSC2688 NPN EPITAXIAL SILICON TRANSISTOR COLOR TV CHROMA OUTPUT VIDEO OUTPUT T O -126 ABSOLUTE MAXIMUM RATINGS R a tin g U n it C ollector- Base Voltage C h a ra c te ris tic VcBO S ym bol 300 V C ollector- E m itter Voltage V ceo 300 V Em itter- Base Voltage