100YA Search Results

Contextual Info: LED LIGHT BARS 5x10m m , 5x16m m , 5x22m m , 10x10m m , 10x16m m , 10x22mm LED PART NUMBER LED RADIATION COLOR ELECTRO-OPTICAL CHARACTERISTICS Ta=25*C lr=100yA MAX Vf/LED X P If Iv mcd mA min/max typ/max nm NO OF LEDS PER LIGHT BAR 2SL200R6 ULTRA RED 20 2 0 .0 /1 0 0

CM500

Contextual Info: SLD-69BGC OPTOELECTRONIC CHARACTERISTICS 0 T=25°C Parameter Test Condition Short Circuit Current Symbol Min H*=25mw/cm^ 500 Ftc. ISC 50 Open Circuit Voltage H*=25mw/cm^ (500 Ftc.) VOC Dark Reverse Current VR=100mV XD Breakdown Voltage IR=100yA VBR Junction Capacitance

TC57256AD-150

Contextual Info: 32,768 WORD x 8 BIT CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY PRELIMINARY Id e s c r i p t i q n I The TC57256AD is a 32,768 word x 8 bit CMOS ultraviolet light erasable and electri­ cally programmable read only memory. For read operation, the TC57256AD's access time

Contextual Info: 8,192 W O R D X 8 B IT C M O S STA TIC R A M ¡d e s c r i p t i o n ] The TC5565APL/AFL is a 65,336 hit static random access m em ory organized as 8,192 words by 8 bits using CMOS technology, and operates from a single 5V supply. Advanced circuit techniques

Contextual Info: iZ J L4972A L4972AD S G S -T H O M S O N 2A SWITCHING REGULATOR • ■ ■ . ■ ■ ■ . ■ ■ ■ ■ ■ ■ 2A OUTPUT CURRENT 5.1V TO 40V OUTPUT VOLTAGE RANGE 0 TO 90% DUTY CYCLE RANGE INTERNAL FEED-FORWARD LINE REG. INTERNAL CURRENT LIMITING PRECISE 5.1 V ± 2% ON CHIP REFERENCE

29c51002

Contextual Info: M OSEL VITELIC V29C51002T/V29C51002B 2 MEGABIT 262,144x8-BIT 5 VOLT CMOS FLASH MEMORY PRELIMINARY Features Description • ■ ■ ■ ■ ■ The V29C51002T/V29C51002B is a high speed 262,144 x 8 bit CMOS flash memory. Programming or erasing the device is done with a single 5 Volt

MAX797

Contextual Info: JVÏÆXAJSA High-Accuracy Step-Down Controller 19-1175; RevO; 12/96 with Synchronous R ectifier for CPU Power The MAX798 has a logic-controlled and synchronizable fixed-frequency pulse-width-modulating PWM operating mode, which reduces noise and RF interference in sensi­

transistor 2N4248

Abstract: 2N4248 2n4249
Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N4248 2N4249 2N4250 2N4250A U.S.A. SILICON PNP TRANSISTOR TO-106 MAXIMUM RATINGS (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage

DE3005

Abstract: 1011S Matra-Harris
Contextual Info: european space agency agence spatiale européenne Pages 1 to 43 INTEGRATED CIRCUITS, SILICON MONOLITHIC, CMOS SILICON GATE, STATIC, 16K 16348 x 1 BIT ASYNCHRONOUS RANDOM ACCESS MEMORY WITH 3-STATE OUTPUTS, BASED ON TYPES HM65262 AND HM65262B ESA/SCC Detail Specification No. 9301/018

2N65T

Abstract: 2N6515 CEB npn 10PA 20MHZ 2N6516 2N6517 2N6518 2N6519 2N6520
Contextual Info: 2N6515 2N6516 2N6517 NPN 2N6518 2N6519 2N6520 PNP ♦I COMPLEMENTARY S IL IC O N HIGH VOLTAGE TRANSISTORS JED EC TO-92 CASE D ESC RIPTIO N The CENTRAL SEMICONDUCTOR 2N6515 N P N , p le m e n ta ry s i l i c o n t r a n s i s t o r s d e s ig n e d MAXIMUM RATINGS

2N6558

Abstract: 2N6557 2N6559
Contextual Info: Datasheet 2N6557 2N6558 2N6559 NPN SILICON Hlr - VOLTAGE TRANSISTOR F o n fH i• i i G m i wm i ^ - - ■ semiconductor Corp- JEDEC 7 j -202 CASE 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors

CSSD2003

Contextual Info: Data Sheet CSSD2003 f%oi6IH n t ri a r HI S em icon d u ctor Corp. SILIC O N SWITCHING DIODE 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JED EC DO-35 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION

MPSA13

Abstract: MPSA12 MPSA14 mpsa13 central
Contextual Info: Datasheet J • TM P a h 1 W C EITFO 1 Semiconductor Corp. MPSA12 MPSA13 MPSA14 NPN SILICON DARLINGTON TRANSISTOR JEDEC T0-92 CASE EBC 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors

2N4058

Abstract: 2N4061 2N4062 2N4060 2N3711 2N3707 2N4059
Contextual Info: DESCRIPTION The CENTRAL SEMICONDUCTOR 2N4058 series types are Molded Epoxy Silicon PNP Transistors designed for low level, low noise 2N4058 and Low level, high gain (2N4059, 2N4060, 2N4061, 2N4062) applications. Recommended NPN complementary series is 2N3707 thru '

D12D

Abstract: MIL-HDBK-217 250kf n-sb3
Contextual Info: B O ^ H L IN N OVA TION a n d E X C E L L E N C E UN S S E B I E S Single Output Non-lsolated, 3.3V and 5V 3 Amp, DC/DC Converters Features „ Lo w c o st, high e fficiency, w id e in p u t vo lta g e ran g e and lo w o u tp u t noise _ . d e fin e DATEUs ne w U N S S e rie s o f n o n -iso la te d , ste p -d o w n , s w itc h in g D C /D C

Contextual Info: PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ZTX704 ZTX705 ISSUE 3 - MAY 94_ FEATURES * 120 V olt VCE0 * 1 A m p continuous current * Gain o f 3K a t lc=1 Am p * Ptot=1 W att APPLICATIONS * Lamp, solenoid and relay drivers

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

5517N

Abstract: 295 da hen ne 5517AN
Contextual Info: N E 5517 /5 5 1 7A Dual Operational Transconductance Amplifier Product Specification DESCRIPTION FEATURES T h e N E 5 5 1 7 c o n t a in s t w o c u r r e n t- c o n ­ • Constant impedance buffers • AVbe of buffer is constant with amplifier Ibias change

Contextual Info: Philips Sem iconductors Product specification Hex D-type flip-flop with reset; positive edge-trigger 74LV174 FEATURES DESCRIPTION • Wide operating voltage: 1.0 to 5.5V The 74LV174 is a low-voitage Si-gate CMOS device and is pin and function compatible with the 74HC/HCT174.

Contextual Info: Central CMLT2207 Semiconductor Corp. SURFACE MOUNT PICOmini DUAL,COMPLEMENTARY SILICON TRANSISTORS MAXIMUM RATINGS: DESCRIPTION: The Central Semiconductor CMLT2207 con­ sists of one 2N2222A NPN silicon transistor and one individual isolated complementary

Contextual Info: C hicago M 1080 Johnson Drive Buffalo Grove, IL 60089 iniature 708-459-3400 Fax 708-459-2708 W HERE INNOVATION COM ES TO LIG H T T - 1 3/ 4 U l t r a b r i g h t L E D L a m p s D E S C R I P T I O N The Ultrabright CMD3X50 Series LED lamp provides exceptional brightness in a very narrow viewing area, in a

Contextual Info: 147 Central Avenue Hackensack, New Jersey 07601 Tel: 201-489-8989 • Fax: 201-489-6911 C h ic a g o M iniature L a m r In c . WHERE INNOVATION COMES TO LIGHT These rectangular LED lamps provide a 2 x 5 mm lighted surface area. ± M4 •07t _ J t m i Stackable in X or Y direction, these lamps are typically used as legend

Contextual Info: Philips Semiconductors Preliminary specification 16-bit buffer/line driver; 3-State 74LVCH16541A FEATURES PIN CONFIGURATION • 5 volt tolerant inputs/outputs for interfacing with 5V togic • Wide supply voltage range of 1.2 V to 3.6 V • Complies with JEDEC standard no. 8-1A

Contextual Info: t ,• üh. !:*t L72CB/1STA2 RIGHT ANGLE LED LAMP p DESCRIPTION L72CB/1STA is a right angle LED lamp that incorporates one clear transparent high efficiency red LED lamp • in a black plastic housing. c ,K ~ 0 .5 . W ô?T, 1 2.54, 0.5 0 . 02S _« \~ r