10DQ11 Search Results

Contextual Info: IBM11N32645B IBM11N32735B IBM11N32645C IBM11N32735C 32M x 64/72 DRAM MODULE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • System Performance Benefits: - Non buffered for increased performance - Reduced noise 35 VSs/V cc P^s

Contextual Info: IBM11T1645LP IBM11T1645NP 1M x 64 144 PIN SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Optimized for byte-write non-parity applications • System Performance Benefits: - Reduced noise 18 VSs/18VCc pins

47D5

Abstract: 13T8644HPE-10T
Contextual Info: IBM13T8644HPD IBM13T8644HPE One Bank 8M x 64 SDRAM SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 8Mx64 Synchronous DRAM SO DIMM • Low Power • Performance: -360 -10 3 3 100 100 t;K Clock Cycle 10 10 i ns

Contextual Info: j _ j g j ¥ | IB M 1 1 M 4 7 2 0 D 4M x 72 DRAM MODULE Features • 168 Pin JED EC Standard, 8 Byte Dual In-line Memory Module • Optimized for byte-write parity applications • System Performance Benefits: - • 4M x72 Fast Page Mode DIM M • Performance:

Nippon capacitors

Contextual Info: HB56UW272EJN Series, HB56UW264EJN Series 2.097.152-word x 72-bit High Density Dynamic RAM Module 2.097.152-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-717B Z Rev.2.0 Jun. 9, 1997 Description The HB56UW272EJN, HB56UW 264EJN belong to 8 Byte DIMM (Dual In-line Memory Module) family,

Contextual Info: ADVANCE MICRON I 1 , 2 MEG X 32 SDRAM DIMM TECHNOLOGY, INC. SYNCHRONOUS ¡¡£fg * I JU For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html IWI a \ IWI f J I J I I I I V I V / I / w FEATURES

dq35j

Contextual Info: IBM13T8644HPD IBM13T8644HPE One Bank 8M x 64 SDRAM SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 8Mx64 Synchronous DRAM SO DIMM • Low Power • Performance: -360 -10 3 3 100 100 t;K Clock Cycle 10 10 j ns :

Contextual Info: IBM13T4644MC IBM13T8644MC Preliminary 4M/8M x 64 SDRAM SO DIMM Features • 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 4/8Mx64 Synchronous DRAM SO DIMM • Performance: -10 CAS Latency ! Units ! 3 100 I MHz I jf c K

Contextual Info: IBM11T4645MP 4M Zittii ViumiiiWI ^ unniniwi n m rflu irai»'I TiWTn •■ir nm n i Id HÜ il ii, I I I X 64 144 PIN SO DIMM -iniTi '!»» linm 11 TTf Iil I <>l>n 1*1V iI‘| w riir n<4 Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses

JEP-106

Abstract: MITSUBISHI date code
Contextual Info: MITSUBISHI LSIs Preliminary Some of contents are subject to change without notice. MH4V645/6445AXJJ-5,-6,-5S,-6S HYPER PAGE MODE 268435456-BIT 4194304-WORD BY 64-BIT DYNAMIC RAM DESCRIPTION APPLICATION This is family of 4194304 - word by 64 - bit dynamic RAM

Contextual Info: IBM13T2649NC 2M x 64 2 Bank SDRAM SO DIMM Features • 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 2Mx64 Synchronous DRAM SO DIMM • Performance: CAS Latency • • • • • • jfcK I Clock Frequency jtcK i Clock Cycle

Contextual Info: IBM11N8645B IBM11N8735B IBM11N8645C IBM11N8735C 8M x 64/72 DRAM MODULE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • System Performance Benefits: -Non buffered for increased performance • 8Mx64, 8Mx72 Dual Bank Extended Data Out

Contextual Info: IBM13T4644MPB IBM13T8644MPB Preliminary 4M/8M x 64 SDRAM SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 4/8Mx64 Synchronous DRAM SO DIMM • Performance: -10 CAS Latency i Units Ì 3 | fcK | Clock Frequency

Contextual Info: IBM11M32730B IBM11M32730C 32M x 72 DRAM Module Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 32Mx72 Dual Bank Fast Page Mode DIMM • Performance: • System Performance Benefits: -Buffered inputs (except RAS, Data) -Reduced noise (32 VSs/V cc P^s)

Nippon capacitors

Contextual Info: HB56HW164EJN Series 1,048,576-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-696B Z Rev.2.0 May. 30, 1997 Description The HB56HW164EJN belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The

Contextual Info: Discontinued 12/38 » last order; 9/99 las! ship IBM13T2649JC 2M x 64 SDRAM SO DIMM Features • 144 Pin (emerging) JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 2Mx64 Synchronous DRAM SO DIMM • Performance: 10 CAS Latency jfcK jtcK

Nippon capacitors

Abstract: 24C02N
Contextual Info: HB56U W1672EJN Series, HB56UW1664EJN Series 16777216-word x 72-bit High Density Dynamic RAM Module 16777216-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-643A Z Rev. 1.0 Jun. 9, 1997 Description The HB56UW1672EJN Series, HB56UW1664EJN Series belong to 8-byte DIMM (Dual in-line Memory

Contextual Info: ADVANCE 2M E Gx64 MICRON B SDRAM SODIMM TECHNOLOGY. INC. SMALL-OUTLINE SDRAM MODULE MT8LSDT264H FEATURES 144-Pin Small-Outline DIMM DF-6 MARKING • Package 144-pin SODIMM (gold) G • Frequency/CAS Latency 66 M Hz/CL = 2 (10ns, 100 MHz SDRAMs) -66CL2 66 M H z/CL = 3 (12ns, 83 MHz SDRAMs) -66CL3

Contextual Info: IBM11T1645NP IBM11T2645NP 1M/2M x 64 144 PIN SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • 1 M/2Mx64 Extended Data Out SO DIMM • Performance: ! -6 0 ! -6R I j^RAC i RA S Access Tim e I 60ns

Contextual Info: HB56UW473EJN Series, HB56UW465EJN Series HB56UW473EJN 32 MB Unbuffered EDO DRAM DIMM 4-Mword X 72-bit, 2 k Refresh, 2-Bank Module 18 pcs of 2 M X 8 Components HB56UW465EJN 32 MB Unbuffered EDO DRAM DIMM 4-Mword X 64-bit, 2 k Refresh, 2-Bank Module (16 pcs of 2 M X 8 Components)

10DQ11

Contextual Info: O K I Semiconductor MSC23240B/BL-XXBS20/DS20 2,097,152-Word by 40-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC23240B/BL-xxBS20/DS20 is a fully decoded 2,097,152-word x 40-bit CMOS Dynamic Ran­ dom Access Memory Module composed of twenty 4-Mb DRAMs in SOJ MSM514400B/BL packages