10HZ15 Search Results

2N5401

Contextual Info: i TOSHIBA TRANSISTOR 2N5401 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown Voltage : VC b o =-160V, VCe o = -150V . Low Leakage Current : ICB0=5-50nA(Max. ) @ V c b = - 120V

Contextual Info: 2N5400 2N5550 2N 5401 2N5551 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS 1 CASE TO-92A THE 2N5400, 2N5401 PNP AND 2N5550, 2N5551 (NPN) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS INTENDED FOR GENERAL PURPOSE HIGH VOLTAGE AMPLIFIER AND SWITCHING APPLICATIONS.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89 Plastic-Encapsulate Transistors SOT-89-3L PXT3904 TRANSISTOR NPN 1. BASE FEATURES z Compliment to PXT3906 z Low current z Low voltage 2. COLLECTOR 1 2 3 3. EMITTER MARKING: 1A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

PXT3906

Abstract: PXT3904
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89 Plastic-Encapsulate Transistors SOT-89 PXT3906 TRANSISTOR PNP 1. BASE FEATURES z Compliment to PXT3904 z Low current z Low voltage 1 2. COLLECTOR 2 3 3. EMITTER MARKING: 2A MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

D00373

Abstract: GDG3737 A138
Contextual Info: ALLEGRO MICROSYSTEMS INC 13 î • 0SDM33Ô GD03737 fl ■ T-91-01 PROCESS VHB Process VHB PNP High-Voltage Transistor Process V H B is a P N P double-diffused silicon epi­ taxial planar device. It is designed for use in highvoltage amplifier circuits. It is the complement to NPN

2N555

Abstract: 5401 transistor 2N 5551 2N5400 5551 555-1 transistor 2N5401 1000C 2N5401 2N5550
Contextual Info: 2N5400 2N5550 2N 5401 2N5551 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS CASE TO-92A THE 2N5400, 2N5401 PNP AND 2N5550, 2N5551 (NPN) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS INTENDED FOR GENERAL PURPOSE HIGH VOLTAGE AMPLIFIER AND SWITCHING APPLICATIONS.

Contextual Info: B U R R -B R O W N •m ü i REF01 +10V Precision VOLTAGE REFERENCE FEATURES DESCRIPTION • OUTPUT VOLTAGE: +10V ±0.2% max • EXCELLENT TEMPERATURE STABILITY: 8.5ppm/°C max -40°C to +85°C 10.0 ppm/°C max (~55°C to +125°C) • LOW NOISE: 5^Vp-p typ (0.1 Hz to 10Hz)

Contextual Info: 2N5209 • 2N5210 NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS 1 CASE TO-92A THE 2N5209, 2N5210 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AP LOW NOISE PREAMPLIFIERS. THEY ARE COMPLEMENTARY TO THE PNP TYPE 2N5086, 2N5087- '0 EBC ABSOLUTE MAXIMUM RATINGS

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L PXT3906 TRANSISTOR PNP 1. BASE FEATURES z Compliment to PXT3904 z Low current z Low voltage 2. COLLECTOR 1 2 3 3. EMITTER MARKING: 2A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

PXT3906

Abstract: marking 1A
Contextual Info: PXT3904 SOT-89 Transistor NPN 1. BASE 1 3. EMITTER 2 B 2.6 4.25 2.4 3.75 — Compliment to PXT3906 — Low current 0.8 MIN 0.44 0.37 Low voltage MARKING: 1A Value Units VCBO Collector-Base Voltage Parameter 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage

PXT3904

Abstract: PXT3906 marking 1A
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89 Plastic-Encapsulate Transistors SOT-89 PXT3904 TRANSISTOR NPN 1. BASE FEATURES 1 z Compliment to PXT3906 z Low current z Low voltage 2. COLLECTOR 2 3 3. EMITTER MARKING: 1A MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

YTS4126

Abstract: YTS4403 YTS4125 YTS4124 YTS4401 YTS4123 YTS4400 YTS4402 sc 005 04
Contextual Info: - 350 - 1 1 T a = 2 5 tC . * E P f i T c = 2 5 t 5 m % m m VcBO Vceo (V) (V) ÍCC DC) (A) Pc Pc* iCBO (max) Vc b (W) (W) (ilk) (V) YTS4124 M 2 G A/SW 30 25 0. 2 0.2 0.05 20 YTS4125 M 2 G A/SW -30 -2 5 -0.2 0.2 M2 M2 M2 M2 M2 G A/SW -25 - 25 -0.2 0 .2 -0.05

YTS2222A

Abstract: YTS3904 YTS3905 YTS2222 YTS3903 UN9217 YTS4125 YTS2221 YTS2221A YTS2907
Contextual Info: - 348 - Ta=25tC, *EP(àTc=25‘ C ft £ ffl UN8231A ÍÜT Digital UN9110 töT & VcBO VcEO Ic(DC) Pc Pc* (V) (V) (A) <W) (W) m ICBO (max) (/¿A) VcB (V) % (min) w & (max) tí VCE (V) (Ta=25‘ C) Ic / I e (A) [*EPÍátypfiSJ (max) (V) (V) le (A) Ib (A) 60

2N5081

Abstract: transistor 2N5086 2N5086 2n508 2n5088 transistor 2N5087 2N5088 2N5089
Contextual Info: 2N5086 2N5088 2N5087 2N5089 PNP , NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS I CASE TO-92A THE 2N5086, 2N5087 PNP AND 2N5088; 2N5089 (NPN) ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF LOW NOISE PREAMPLIFIER CIRCUITS. IBC (PNP) ABSOLUTE MAXIMUM RATINGS

Contextual Info: PXT3906 SOT-89 Transistor NPN 1. BASE 1 SOT-89 2. COLLECTOR 3. EMITTER 2 Features — Compliment to PXT3904 — Low current — Low voltage B 2.6 4.25 2.4 3.75 0.8 MIN 0.44 0.37 MARKING: 2A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol 4.6 4.4 1.8

thyristor TAG 8506

Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
Contextual Info: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y

05G433

Contextual Info: A L L E GR O M C R O S Y S T E M S INC S3 » • 05Ü4338 OODSbbS HALGR T - ^ l- o l PROCESS BXE Process BXE PNP Small-Signal Transistor Process BXE is a double-diffused PNP epitaxial planar silicon transistor designed for use in generalpurpose amplifier and switching applications. Its

Contextual Info: 2N5086 2N5088 2N5087 2N5089 PNP , NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS CASE T0-92A THE 2N5086, 2N5087 PNP AND 2N5088; 2N5089 (NPN) ARE SILICON PLANAR EPITAXIAL TRANSISTORS POR USE IN AF LOW NOISE PREAMPLIFIER CIRCUITS. 1 EBC ABSOLUTE MAXIMUM RATINGS for