120 GSM Search Results

4G10

Abstract: BLF4G10-120 BLF4G10S-120 ACPR400 ACPR600
Contextual Info: BLF4G10-120; BLF4G10S-120 UHF power LDMOS transistor Rev. 01 — 10 January 2006 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance

po111

Abstract: ELNA capacitor 100 uf 50v transistor a09
Contextual Info: PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in

BCP56

Abstract: LM7805 PTFA091201GL PTFA091201HL A0912
Contextual Info: PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in

Contextual Info: PTFA091201E PTFA091201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in

BCP56

Abstract: LM7805 PTFA091201E PTFA091201F PTFA091201EV4
Contextual Info: PTFA091201E PTFA091201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in

ceramic capacitor 103 z 2kv

Contextual Info: PTFA091201E PTFA091201F Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201E and PTFA091201F are thermally-enhanced, 120-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characaterized for GSM/EDGE and

LM7805

Abstract: ptfa091201e BCP56 PTFA091201F
Contextual Info: PTFA091201E PTFA091201F Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201E and PTFA091201F are thermally-enhanced, 120-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characaterized for GSM/EDGE and

DB978

Abstract: DB978H120EKL
Contextual Info: 1710-1880 MHz DB978H120EKL 13 dBd Panel Antenna 1710-1880 MHz 13 dBd 15.1 dBi Gain Vertical Polarization 120° Azimuth BW • 7.5° Elevation BW • 7/16 DIN (Bottom) • GSM1800 120° • • • • Azimuth (Horizontal) Elevation (Vertical) Electrical

1755

Contextual Info: DUAL POLARISED TRI-SECTOR ANTENNA GSM900 XP/3-120/15 TYPE 1755 ‰ TRI-SECTOR MONOPOLE MOUNTING ‰ 3 X 120 DEGREE SECTORS This Dual-polarised antenna is intended for sites where a low-profile 3-sector coverage is desired. The radome diameter is only 350mm, and the base flange assembly

ACPR600

Abstract: BLF4G10LS-120 ACPR400 BLF4G10-120 philips electrolytic capacitor
Contextual Info: BLF4G10LS-120 UHF power LDMOS transistor Rev. 01 — 10 January 2006 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance

siemens rs 1016

Abstract: B37940-K5220-J62 B54102 B3749 0805CS-270XMBC type pd21 0805CS-220XMBC Q62702-G44 Siemens MMIC
Contextual Info: CGY 120 GaAs MMIC Datasheet * Monolithic microwave IC MMIC-Amplifier for mobile communication * Variable gain amplifier for GSM/PCN applications * Gain Control range over 50dB

B37940-K5220-J62

Abstract: siemens rs 1016 B37940K5220J62 B54102 mmic-amplifier CGY120 B54102-A1471-J60 B37490-K5120-J62 0805CS-220XMBC MMIC marking CODE c4
Contextual Info: SIEMENS GaAs MMIC CGY 120 Datasheet * Monolithic microwave IC MMIC-Amplifier for mobile communication * Variable gain amplifier for GSM/PCN applications * Gain Control range over 50dB * 50Q input and output matched * Low power consumption 'Operating voltage range: 2.7 to 6 V

B54102

Abstract: dg s22 B37940-K5220-J62
Contextual Info: SIEMENS CGY 120 GaAs MMIC Datasheet * Monolithic microwave IC MMIC-Amplifier for mobile communication * Variable gain amplifier for GSM/PCN applications * Gain Control range over 50dB *5 0 i2 input and output matched * Low power consumption ‘ Operating voltage range: 2.7 to 6 V

sirfstar 3

Abstract: GSM based home appliance control circuit diagram GSP2E NTC 4,7 Siemens sirfstar 3 commands 2933 regulator 2933 Voltage Regulator GCF-CC GSP2E/LP GSM module circuit diagram
Contextual Info: s XT55 Hardware Interface Description Confidential / Released XT55 Siemens Cellular Engine Version: DocID: 01.00 XT55_hd_v01.00 XT55_hd_v01.00 Page 1 of 120 Hardware Interface Description mobile 21.05.2004 s XT55 Hardware Interface Description Confidential / Released

UL-2601-1

Abstract: UL2601-1 UL2601 IEC601-1-2 GSM28-28 EN60601-1 EN61000-4-2 EN61000-4-3 EN61000-4-4 EN61000-4-5
Contextual Info: GSM28 Medical 28 Watt Global Performance Switchers FEATURES: • • • • • • • • Industry’s smallest 28 W medically approved switcher Compact size 4.00" x 2.59" x 0.92" Wide-range ac input: 85-264 Vac Less than 25 µA leakage current @ 120 Vac

cgh09120f

Abstract: 3019 Transistor Ro4003
Contextual Info: CGH09120F 120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM Cree’s CGH09120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE

Contextual Info: CGH09120F 120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM Cree’s CGH09120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE

ATC600S

Abstract: 8029 l2 circuit CAP 0805 ATC 600F 8029 l2 CGH0912 CGH09120F CGH09120F-TB RO4003 amplifier TRANSISTOR 12 GHZ
Contextual Info: PRELIMINARY CGH09120F 120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM Cree’s CGH09120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE

ATC600S

Abstract: RO4003 CAP 0805 ATC 600F ATC 600F CGH0912 CGH09120F CGH09120F-TB JESD22 68-pF j 182
Contextual Info: CGH09120F 120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM Cree’s CGH09120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE

cgh09120f

Abstract: ATC 600F lk 3058 3019 Transistor LTE AMPLIFIER
Contextual Info: CGH09120F 120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM Cree’s CGH09120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE

Contextual Info: DUAL POLARISED TRI-SECTOR ANTENNA GSM900 XP/3-120/15/0 TYPE 1755 TRI-SECTOR MONOPOLE MOUNTING 3 X 120O SECTORS This Dual-polarised antenna is intended for sites where a low-profile 3-sector coverage is desired. The radome diameter is only 350mm, and the base flange assembly

ul2601-1

Abstract: EN60601-1 EN61000-4-2 EN61000-4-3 EN61000-4-4 EN61000-4-5
Contextual Info: GSM28 Medical 28 Watt Global Performance Switchers GLOBAL PERFORMANCE SWITCHERS FEATURES: DC Power Supplies • Industry’s smallest 28 W medically approved switcher • Compact size 4.00” x 2.59” x 0.92” • Wide-range ac input: 85-264 Vac • Less than 25 A leakage current @ 120 Vac

GSM pcb antenna

Abstract: gsm antenna pcb MMCX connector GSM MMCx antenna PCB GSM ANTENNA datasheet GSM gsm antenna
Contextual Info: RoHS Revisions RoHS  1 Initial Design  02/03/09 Revisions    NO DESCRIPTION 1 FR4 PCB 80*30*0.8mm 2 Ø1.13mm Cable 1202mm 3 Black Insulator Tape 4 MMCX M RA Connector taoglas limited GSM Penta-Band PCB Antenna – 120mm Ø1.13 MMCX(M)RA

MAX2042

Contextual Info: MAX2042A RELIABILITY REPORT FOR MAX2042AETP+ PLASTIC ENCAPSULATED DEVICES November 15, 2011 MAXIM INTEGRATED PRODUCTS 120 SAN GABRIEL DR. SUNNYVALE, CA 94086 Approved by Richard Aburano Quality Assurance Manager, Reliability Operations Maxim Integrated Products. All rights reserved.