120JA Search Results

120JA

Contextual Info: 4 T H IS D R A W IN G IS U N P U B L IS H E D . RELEASED FOR ALL C O P Y R IG H T BY TYCO E L E C T R O N IC S 2 3 P U B L IC A T IO N NTERNATIO N AL RIG H TS , - LOC R ESER VED . C O R P O R A T IO N . D IS T REVISIO N S 00 D E S C R IP T IO N R E V IS E D

SL301A

Abstract: ERIE murata ceramic z5u ERIE murata ceramic z5u axial sl-40
Contextual Info: MONOLITHIC CERAMIC CAPACITORS CONFORMAL COATED AXIAL LEADS O U TS TA N D IN G C H A R A C TE R IS TIC S • ■ ■ ■ * - *- | m — '«■* • i l Wide capacitance, T.C., voltage and tolerance range Industry standard sizes Tape and Reel available for auto-insertion

Contextual Info: M29F105B 1 Mbit 512Kb x16, Block Erase Single Supply Flash Memory • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 55ns ■ FAST PROGRAMMING TIME: 10|os typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.) - Program Word-by-Word

Contextual Info: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . RELEASED FOR ALL C O P Y R IG H T BY TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S - 2 , - LOC RESERVED . R E V IS IO N S D IS T 00 C O R P O R A T IO N . D E S C R IP T IO N REVISED £ SEE DWN

Contextual Info: M29F100T M29F100B 1 Mbit 128Kb x 8 or 64Kb x 16, Block Erase Single Supply Flash Memory • 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACC ESS TIME: 70ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)

Contextual Info: M29F400T M29F400B 4 Mbit x8/x16, Block Erase Single Supply Flash Memory • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACC ESS TIME: 70ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)

Contextual Info: T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T BY TYCO E L E C T R O N IC S 2 3 4 P U B L IC A T IO N R IG H T S - , - LOC RESERVED. C O R P O R A T IO N . D IS T REVISIO N S 00 D E S C R IP T IO N A REVISED PER DWN A PVD

HD-22

Abstract: 120JI
Contextual Info: T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R ALL P U B L IC A T IO N R IG H T S LOC REVISIO N S D IS T 00 RESERVED . C O P Y R IG H T D E S C R IP T IO N D2 TE CONNECTIVITY P /N PER E C O - 11-005033 APVD RK HMR 23MAR1 DATE CODE A 18.60 [. 732]

varistor code numbers

Abstract: EZJZ1V330GA EZJS2YD472 schematic symbol for varistor EZJZ1V270GA EZJS1VB822 EZJS1VC392 EZJS1VD182 EZJS2VB223 varistor dsc
Contextual Info: Multilayer Varistors Multilayer Varistor for ESD pulse Series EZJS : For Power line ST:Strontium Titanate (High capacitance) n Precautions for Handling see Page 112 to 118 n Features l Multilayer monolithic ceramic construction l Excellent solderability and superior heat resistance

Contextual Info: W # SG S-TH O M SO N k7#1 KiflD gl^ [l[Ul Tr[S®SfflDtes M29F002T M29F002B 2 Mb (x8, Block Erase SINGLE SUPPLY FLASH MEMORY • 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACC ESS TIME: 70ns ■ FAST PROGRAMMING TIME: 10|os typical

138D capacitor

Abstract: 337x E5900A sprague 138d 138D
Contextual Info: A COMPANY TYPE 138D W et Tantalum C apacitors G elled-Electrolyte Sintered Anode T a n t a l e x C apacitors Herm etically>Sealed w ith True G lass-to-Tantalum Seal OF SPRAGUE FEA TU R ES Improved reliability through the use of a glass-to-tantalum true

schematic symbol for varistor

Abstract: varistor ST EZJZSV800AA
Contextual Info: Multilayer Varistors Multilayer Varistor for ESD pulse Series EZJS : For Power line ST:Strontium Titanate (High capacitance) n Precautions for Handling see Page 112 to 118 n Features l Multilayer monolithic ceramic construction l Excellent solderability and superior heat resistance

LT1189

Abstract: LTC1051 lt1001s LT1126 LT1208 LT1225 LT1364 LT/SG3527A LT1220
Contextual Info: Low Noise Low Ib - Zero Drift LTC1047 LTC1049 LTC1050 LTC1051 LTC1052 LTC1053 LTC1150 LTC1151 LTC1152 LTC1250 D, 10nV (S, (S, (D. (S. Zero DriftLTC1047 (D. LTC1049 (S, LTC1050 (S, LTC1051 (D. LTC1052(S, LTC1053(Q, LTC1150(S. LTC1151 (D, LTC1152(S, 10 m V)

HD-22

Abstract: 120JI
Contextual Info: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 RELEASED FOR A LL 2 P U B L IC A T IO N R IG H T S LOC RESERVED . C O P Y R IG H T REVISIONS D IS T 00 D E S C R IP T IO N 31 £ SEE PER E C O - 11-005033 DWN HOUSING MATERIAL: PBT, GLASS FILLED, BLACK, UL 94V-0 RATED.

Contextual Info: M29W040 4 Mbit 512Kb x 8, Block Erase Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ BYTE PROGRAMMING TIME: 12jjs typical ■ ERASE TIME - Block: 1.5 sec typical

CXA1417S

Abstract: cxa1417 dolby C HADKH55 Dolby NR 315HZ dolby Ic dolby Dolby CXA1878Q
Contextual Info: SONY CXA1878Q □ □ Dolby* B-C Type Noise Reduction System with Recording/Playback Equalizer Amplifier Description The CXA1878Q is a bipolar IC with a built-in Dolby B-C type noise reduction system NR , Dolby S type select switch, recording/playback equalizer, electronic

LTC1643H

Abstract: LTC1643L 12VSWITCH
Contextual Info: une D iD T M l [ H 5 I L I Â S I Final E le c tric a l S p e c ific a tio n s LTC1643L/LTC1643H TECHNOLOGY PCI-Bus H ot Swop C ontro ller September 1998 FEA T U R ES DCSCRIPTIO • Allows Safe Board Insertion and Removal from a Live PCI Slot ■ Works on either a Motherboard or

sh 94v-0

Contextual Info: 4 T H IS D R A W IN G IS U N P U B L IS H E D . RELEA SED FO R ALL C O P Y R IG H T BY TYCO 2 3 E L E C T R O N IC S P U B L IC A T IO N IN T E R N A T IO N A L R IG H T S , - LO C REVISIO N S D IS T 00 RESERVED . C O R P O R A T IO N . D E S C R IP T IO N

Contextual Info: M29F400T M29F400B 4 Mbit 512Kb x8 or 256Kb x16, Block Erase Single Supply Flash Memory • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 55ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)

Contextual Info: SGS-THOMSON . llIlMJilLIlMWDÊi M29R800T M29R800B, M29R800D 8 Mb x8/x16, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY PRELIMINARY DATA SUPPLY VOLTAGE - 1.8V to 3.6V for READ OPERATION - 2.7V to 3.6V for PROGRAM and ERASE OPERATIONS FAST ACCESS TIME: 100ns

Contextual Info: C ir N A V U IM W ▼A ^Corporation :j: SP6660| SIG N AL PR O C E SSIN G EX C ELLE N C E 200mA Charge Pump DC to DC Converter • 94% typical) Conversion Efficiency Where lL (to GND) = 100mA ■ 10kHz/80kHz Selectable Oscillator Frequency ■ Inverts or Doubles Input Supply Voltage

varistor ST

Contextual Info: Multilayer Varistors Multilayer Varistor for ESD pulse Series EZJS : For Power line ST:Strontium Titanate (High capacitance) n Precautions for Handling see Page 112 to 118 n Features l Multilayer monolithic ceramic construction l Excellent solderability and superior heat resistance

15Y SMD TRANSISTOR

Abstract: SSM2044 free transistor equivalent book 2sc DAC02 PMI SSM-2045 1V120 1N9148 ssm2100 sharp laser diodes SSM2142 SPICE MODEL
Contextual Info: SUMER 13555 BISHOP'S COURT BROOKFIELD, WI. 53005 414/784-6641 ~""-"- IPMI SSM AUDIO PRODUCTS AUDIO HANDBOOK VOLUMEl TABLE OF CONTENTS Precision Monolithics Inc. Introduction . 4

LM538

Abstract: IC LM393 w812ui1 cb1058 MAX8770 30271 40GAB0510-EXXX CB1051 G2 sp8k10s RJ1005
Contextual Info: A B C CPU_VCORE POWER HCPURST# form NB PAGE 37 CPU:Yonah uFCPGA 478PIN PAGE 3,4 CLK-CPU+ CLK-CPU- 4 HOST BUS (400&533&667MHZ) SO-DIMM D E CLOCK GEN DDR3 VRAM PAGE 2 PAGE 19,20 4 OSC 27MHz ATI M52/M54/M56-P AGTL+ FSB_667MHz 4X Data 2X Address PAGE 14,15,16,17,18