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    128K X 8 BIT LOW POWER CMOS SRAM Search Results

    128K X 8 BIT LOW POWER CMOS SRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    128K X 8 BIT LOW POWER CMOS SRAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A62S7308B

    Abstract: 55si
    Text: A62S7308B Series Preliminary 128K X 8 BIT LOW VOLTAGE CMOS SRAM Document Title 128K X 8 BIT LOW VOLTAGE CMOS SRAM Revision History Rev. No. History Issue Date Remark 0.0 Initial issue September 5, 2000 Preliminary 0.1 Change max. power supply voltage from 3.3V to 3.6V


    Original     		PDF A62S7308B A62S7308B-10S/SI A62S7308B-55S/SI 55si

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION IDT71V024L LOW POWER 3V CMOS SRAM 1 MEG 128K x 8-BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • • • The IDT71V024L is a 1,048,576-bit very low-power Static RAM organized as 128K x 8. It is fabricated using IDT’s highreliability CMOS technology. This state-of-the-art technology,


    Original     		PDF IDT71V024L IDT71V024L 576-bit 71V024

    IDT71T024

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION IDT71T024 LOW POWER 2V CMOS SRAM 1 MEG 128K x 8-BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • • • The IDT71T024 is a 1,048,576-bit very low-power Static RAM organized as 128K x 8. It is fabricated using IDT’s highreliability CMOS technology. This state-of-the-art technology,


    Original     		PDF IDT71T024 IDT71T024 576-bit 71T024

    IDT71L024

    Abstract: 3778
    Text: ADVANCE INFORMATION IDT71L024 LOW POWER 3V CMOS SRAM 1 MEG 128K x 8-BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • • • The IDT71L024 is a 1,048,576-bit very low-power Static RAM organized as 128K x 8. It is fabricated using IDT’s highreliability CMOS technology. This state-of-the-art technology,


    Original     		PDF IDT71L024 IDT71L024 576-bit 71L024 3778

    AS6C1008-55SIN

    Abstract: AS6C1008 AS6C1008-55 A1124
    Text: OCTOBER 2007 January 2007 AS6C1008 X 8 BIT LOW POWER CMOS SRAM 128K X 8 BIT SUPER512K LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Fast access time : 35/55ns Low power consumption: Operating current : 12/10/7mA TYP. Standby current : 1µA (TYP.) Single 2.7V ~ 5.5V power supply


    Original     		PDF AS6C1008 SUPER512KPOWER 35/55ns 12/10/7mA 32-pin 36-ball AS6C1008 AS6C1008-55SIN AS6C1008-55 A1124

    AS6C1008-55TIN

    Abstract: AS6C1008-55SIN AS6C1008-55STIN AS6C1008 AS6C1008-55 32-pin 8mm x 13,4mm sTSOP
    Text: OCTOBER 2007 January 2007 AS6C1008 X 8 BIT LOW POWER CMOS SRAM 128K X 8 BIT SUPER512K LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Fast access time : 35/55ns Low power consumption: Operating current : 12/10/7mA TYP. Standby current : 1µA (TYP.) Single 2.7V ~ 5.5V power supply


    Original     		PDF AS6C1008 SUPER512KPOWER 35/55ns 12/10/7mA 32-pin 36-ball AS6C1008 AS6C1008-55TIN AS6C1008-55SIN AS6C1008-55STIN AS6C1008-55 32-pin 8mm x 13,4mm sTSOP

    as6c1008-55sin

    Abstract: as6c1008-55tin as6c1008
    Text: OCTOBER 2007 January 2007 AS6C1008 X 8 BIT LOW POWER CMOS SRAM 128K X 8 BIT SUPER512K LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Fast access time : 35/55ns Low power consumption: Operating current : 12/10/7mA TYP. Standby current : 1µA (TYP.) Single 2.7V ~ 5.5V power supply


    Original     		PDF AS6C1008 SUPER512K 35/55ns 12/10/7mA 32-pin 36-ball AS6C1008 as6c1008-55sin as6c1008-55tin

    Untitled

    Abstract: No abstract text available
    Text: OCTOBER 2007 January 2007 AS6C1008 X 8 BIT LOW POWER CMOS SRAM 128K X 8 BIT SUPER512K LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Fast access time : 35/55ns Low power consumption: Operating current : 12/10/7mA TYP. Standby current : 1µA (TYP.) Single 2.7V ~ 5.5V power supply


    Original     		PDF AS6C1008 SUPER512KPOWER 35/55ns 12/10/7mA 32-pin 36-ball AS6C1008

    ut6210245

    Abstract: UT621024SC-70LL UT621024 UT621024PC-35L UT621024PC-35LL UT621024SC-35L UT621024-70
    Text:  UTRON UT621024 128K X 8 BIT LOW POWER CMOS SRAM Rev. 1.5 GENERAL DESCRIPTION FEATURES The UT621024 is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using high performance, high reliability CMOS technology.


    Original     		PDF UT621024 UT621024 576-bit 35/55/70ns 32-pin 8mmx20mm 8mmx13 ut6210245 UT621024SC-70LL UT621024PC-35L UT621024PC-35LL UT621024SC-35L UT621024-70

    IDT71L024

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION IDT71L024 LOW POWER 3V CMOS SRAM 1 MEG 128K x 8-BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 Organization • Wide Operating Voltage Range: 2.7V to 3.6V • Commercial (0° to 70°C) and Industrial (-40° to 85°C)


    Original     		PDF IDT71L024 100ns 32-pin, 46-BALL IDT71L024 576-bit 71L024 BF46-1)

    IOea10

    Abstract: IDT71T024 BF461 BF 46
    Text: ADVANCE INFORMATION IDT71T024 LOW POWER 2V CMOS SRAM 1 MEG 128K x 8-BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 Organization • Wide Operating Voltage Range: 1.8V to 2.7V • Commercial (0° to 70°C) and Industrial (0° to 70°C)


    Original     		PDF IDT71T024 150ns, 200ns 32-pin, 46-BALL IDT71T024 576-bit 71T024 IOea10 BF461 BF 46

    UT62W1024-55

    Abstract: 100PF UT62W1024-70 UT62W1024PC-35L UT62W1024PC-35LL
    Text:  UTRON UT62W1024 128K X 8 BIT WIDE RANGE LOW POWER CMOS SRAM Rev. 1.0 FEATURES „ „ „ „ „ „ „ „ The UT62W1024 is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using high performance, high reliability CMOS


    Original     		PDF UT62W1024 UT62W1024 576-bit 35/55/70ns 32-pin 8x20mm UT62W1024-55 100PF UT62W1024-70 UT62W1024PC-35L UT62W1024PC-35LL

    BS62LV1024TI

    Abstract: BS62X FS6S0765RCHSYDT BS62XV1024 TSOP-32 BS62LV1024SC
    Text: BSI Extremely Low Power/Voltage CMOS SRAM 128K X 8 bit BS62XV1024 ! FEATURES ! DESCRIPTION • Extremely low operation voltage : 1.2V ~ 2.4V • Extremely low power consumption : Vcc = 1.5V 10mA Max. write current 0.5mA (Max.) read current 0.005uA (Typ.) CMOS standby current


    Original     		PDF BS62XV1024 005uA 250ns BS62XV1024 R0201-BS62LV1024 BS62LV1024 -40oC BS62LV1024TI BS62X FS6S0765RCHSYDT TSOP-32 BS62LV1024SC

    BS62LV1025

    Abstract: BS62LV1025DC BS62LV1025JC BS62LV1025PC BS62LV1025SC BS62LV1025SI BS62LV1025STC BS62LV1025STI BS62LV1025TC BS62LV1025TI
    Text: BSI Very Low Power/Voltage CMOS SRAM 128K X 8 bit „ DESCRIPTION „ FEATURES • Vcc operation voltage : 4.5V ~ 5.5V • Very low power consumption : Vcc = 5.0V C-grade : 35mA Max. operating current I- grade : 40mA (Max.) operating current 0.4uA (Typ.) CMOS standby current


    Original     		PDF BS62LV1025 -40oC R0201-BS62LV1025 BS62LV1025 BS62LV1025DC BS62LV1025JC BS62LV1025PC BS62LV1025SC BS62LV1025SI BS62LV1025STC BS62LV1025STI BS62LV1025TC BS62LV1025TI

    BGA-48-0608

    Abstract: BS616UV2021 BS616UV2021AC BS616UV2021AI BS616UV2021DC BS616UV2021DI
    Text: BSI Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable BS616UV2021 „ DESCRIPTION „ FEATURES The BS616UV2021 is a high performance, Ultra low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits or 262,144 bytes by 8 bits selectable by CIO pin and operates from a wide


    Original     		PDF BS616UV2021 BS616UV2021 70/100ns -40oC R0201-BS616UV2021 BGA-48-0608 BS616UV2021AC BS616UV2021AI BS616UV2021DC BS616UV2021DI

    TBA 1404

    Abstract: BGA-48-0608 BS616LV2021 BS616LV2021AC BS616LV2021AI BS616LV2021DC BS616LV2021DI
    Text: BSI Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable BS616LV2021 „ DESCRIPTION „ FEATURES The BS616LV2021 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits or 262,144 bytes by 8 bits selectable by CIO pin and operates from a wide


    Original     		PDF BS616LV2021 BS616LV2021 70/100ns R0201-BS616LV2021 TBA 1404 BGA-48-0608 BS616LV2021AC BS616LV2021AI BS616LV2021DC BS616LV2021DI

    BGA-48-0608

    Abstract: BS616LV2021 BS616LV2021AC BS616LV2021AI BS616LV2021DC BS616LV2021DI
    Text: BSI Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable BS616LV2021 „ FEATURES „ DESCRIPTION • Very low operation voltage : 2.4 ~ 5.5V • Very low power consumption : Vcc = 3.0V C-grade: 20mA Max. operating current I-grade: 25mA (Max.) operating current


    Original     		PDF BS616LV2021 BS616LV2021 R0201-BS616LV2021 100ns -40oC BGA-48-0608 BS616LV2021AC BS616LV2021AI BS616LV2021DC BS616LV2021DI

    S0323

    Abstract: No abstract text available
    Text: Integrated Device Technology, Inc. VERY LOW POWER 3.3V CMOS FAST SRAM 1 MEG 128K x 8-BIT FEATURES: • 128K x 8 advanced high-speed CMOS Static RAM • Equal access and cycle times — Commercial: 20/25ns • True 3.3V design, not a re-characterized 5V device


    OCR Scan     		PDF IDT713024SL 20/25ns S0323

    Untitled

    Abstract: No abstract text available
    Text: Advance Information KM681000C Family 128Kx8 bit Low Power CMOS Static RAM CMOS SRAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 uM CMOS The • Organization : 128K x 8 • Power Supply Voltage : Single 5V +/-10% SAMSUNG'S advanced CMOS process technology.


    OCR Scan     		PDF KM681000C 128Kx8 32-DIP, 32-SOP, 32-TSOP KM681000C KM681000CLT-5L 32-TSOP KM661000CLRI-7L

    2183A

    Abstract: No abstract text available
    Text: KM68V1000C, KM68U1000C Family CMOS SRAM 128Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4|jm CMOS • Organization : 128K x 8 • Power Supply Voltage KM68V1000C family : 3.3V ± 0.3V KM68U1000C family : 3.0V ± 0.3V


    OCR Scan     		PDF KM68V1000C, KM68U1000C 128Kx8 KM68V1000C 32-SOP, 32-TSOP 32-sTSOP 2183A

    Untitled

    Abstract: No abstract text available
    Text: KM681001A CMOS SRAM 128K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17,20 ns Max. • Low Power Dissipation The KM681001A is a 1,048,576-bit high-speed static random access memory organized as 131,072 words by


    OCR Scan     		PDF KM681001A KM681001A 576-bit KM681001A-15 KM681001A-17 KM681001A-20 GG23777

    Untitled

    Abstract: No abstract text available
    Text: 1 dt LOW POWER 3V CMOS SRAM 1 MEG 128Kx 8-BIT) ADVANCE INFORMATION IDT71L024 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • • • The IDT71L024 is a 1,048,576-bit very low-power Static RAM organized as 128K x 8. It is fabricated using IDT’s highreliability CMOS technology. Thisstate-of-the-arttechnology,


    OCR Scan     		PDF 128Kx IDT71L024 IDT71L024 576-bit 2S771 71L024 DD27132

    Untitled

    Abstract: No abstract text available
    Text: \dt LOW POWER 2V CMOS SRAM 1 MEG 128KX 8-BIT) ADVANCE INFORMATION IDT71T024 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • • • The IDT71T024 is a 1,048,576-bit very low-power Static RAM organized as 128K x 8. It is fabricated using ID Ts highreliability CMOS technology. This state-of-the-art technology,


    OCR Scan     		PDF 128KX IDT71T024 IDT71T024 576-bit 71T024

    KM681001A

    Abstract: KM681001A-15 KM681001A-20 KM681001AJ D0237
    Text: KM681001A CMOS SRAM 128K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17,20 ns Max. .• Low Power Dissipation Standby (TTL) The KM681001A is a 1,048,576-bit high-speed static random access memory organized as 131,072 words by


    OCR Scan     		PDF KM681001A 128Kx KM681001A-15 KM681001A-17 KM681001A-20 KM681001AJ 32-SOJ-40Q KM681001A 576-bit KM681001A-15 KM681001A-20 KM681001AJ D0237