128K X 8 BIT LOW POWER CMOS SRAM Search Results

A62S7308B

Abstract: 55si
Contextual Info: A62S7308B Series Preliminary 128K X 8 BIT LOW VOLTAGE CMOS SRAM Document Title 128K X 8 BIT LOW VOLTAGE CMOS SRAM Revision History Rev. No. History Issue Date Remark 0.0 Initial issue September 5, 2000 Preliminary 0.1 Change max. power supply voltage from 3.3V to 3.6V

Contextual Info: ADVANCE INFORMATION IDT71V024L LOW POWER 3V CMOS SRAM 1 MEG 128K x 8-BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • • • The IDT71V024L is a 1,048,576-bit very low-power Static RAM organized as 128K x 8. It is fabricated using IDT’s highreliability CMOS technology. This state-of-the-art technology,

IDT71T024

Contextual Info: ADVANCE INFORMATION IDT71T024 LOW POWER 2V CMOS SRAM 1 MEG 128K x 8-BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • • • The IDT71T024 is a 1,048,576-bit very low-power Static RAM organized as 128K x 8. It is fabricated using IDT’s highreliability CMOS technology. This state-of-the-art technology,

IDT71L024

Abstract: 3778
Contextual Info: ADVANCE INFORMATION IDT71L024 LOW POWER 3V CMOS SRAM 1 MEG 128K x 8-BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • • • The IDT71L024 is a 1,048,576-bit very low-power Static RAM organized as 128K x 8. It is fabricated using IDT’s highreliability CMOS technology. This state-of-the-art technology,

AS6C1008-55SIN

Abstract: AS6C1008 AS6C1008-55 A1124
Contextual Info: OCTOBER 2007 January 2007 AS6C1008 X 8 BIT LOW POWER CMOS SRAM 128K X 8 BIT SUPER512K LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Fast access time : 35/55ns Low power consumption: Operating current : 12/10/7mA TYP. Standby current : 1µA (TYP.) Single 2.7V ~ 5.5V power supply

AS6C1008-55TIN

Abstract: AS6C1008-55SIN AS6C1008-55STIN AS6C1008 AS6C1008-55 32-pin 8mm x 13,4mm sTSOP
Contextual Info: OCTOBER 2007 January 2007 AS6C1008 X 8 BIT LOW POWER CMOS SRAM 128K X 8 BIT SUPER512K LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Fast access time : 35/55ns Low power consumption: Operating current : 12/10/7mA TYP. Standby current : 1µA (TYP.) Single 2.7V ~ 5.5V power supply

as6c1008-55sin

Abstract: as6c1008-55tin as6c1008
Contextual Info: OCTOBER 2007 January 2007 AS6C1008 X 8 BIT LOW POWER CMOS SRAM 128K X 8 BIT SUPER512K LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Fast access time : 35/55ns Low power consumption: Operating current : 12/10/7mA TYP. Standby current : 1µA (TYP.) Single 2.7V ~ 5.5V power supply

Contextual Info: OCTOBER 2007 January 2007 AS6C1008 X 8 BIT LOW POWER CMOS SRAM 128K X 8 BIT SUPER512K LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Fast access time : 35/55ns Low power consumption: Operating current : 12/10/7mA TYP. Standby current : 1µA (TYP.) Single 2.7V ~ 5.5V power supply

ut6210245

Abstract: UT621024SC-70LL UT621024 UT621024PC-35L UT621024PC-35LL UT621024SC-35L UT621024-70
Contextual Info:  UTRON UT621024 128K X 8 BIT LOW POWER CMOS SRAM Rev. 1.5 GENERAL DESCRIPTION FEATURES The UT621024 is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using high performance, high reliability CMOS technology.

S0323

Contextual Info: Integrated Device Technology, Inc. VERY LOW POWER 3.3V CMOS FAST SRAM 1 MEG 128K x 8-BIT FEATURES: • 128K x 8 advanced high-speed CMOS Static RAM • Equal access and cycle times — Commercial: 20/25ns • True 3.3V design, not a re-characterized 5V device

IDT71L024

Contextual Info: ADVANCE INFORMATION IDT71L024 LOW POWER 3V CMOS SRAM 1 MEG 128K x 8-BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 Organization • Wide Operating Voltage Range: 2.7V to 3.6V • Commercial (0° to 70°C) and Industrial (-40° to 85°C)

IOea10

Abstract: IDT71T024 BF461 BF 46
Contextual Info: ADVANCE INFORMATION IDT71T024 LOW POWER 2V CMOS SRAM 1 MEG 128K x 8-BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 Organization • Wide Operating Voltage Range: 1.8V to 2.7V • Commercial (0° to 70°C) and Industrial (0° to 70°C)

UT62W1024-55

Abstract: 100PF UT62W1024-70 UT62W1024PC-35L UT62W1024PC-35LL
Contextual Info:  UTRON UT62W1024 128K X 8 BIT WIDE RANGE LOW POWER CMOS SRAM Rev. 1.0 FEATURES „ „ „ „ „ „ „ „ The UT62W1024 is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using high performance, high reliability CMOS

BS62LV1024TI

Abstract: BS62X FS6S0765RCHSYDT BS62XV1024 TSOP-32 BS62LV1024SC
Contextual Info: BSI Extremely Low Power/Voltage CMOS SRAM 128K X 8 bit BS62XV1024 ! FEATURES ! DESCRIPTION • Extremely low operation voltage : 1.2V ~ 2.4V • Extremely low power consumption : Vcc = 1.5V 10mA Max. write current 0.5mA (Max.) read current 0.005uA (Typ.) CMOS standby current

2183A

Contextual Info: KM68V1000C, KM68U1000C Family CMOS SRAM 128Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4|jm CMOS • Organization : 128K x 8 • Power Supply Voltage KM68V1000C family : 3.3V ± 0.3V KM68U1000C family : 3.0V ± 0.3V

Contextual Info: KM681001A CMOS SRAM 128K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17,20 ns Max. • Low Power Dissipation The KM681001A is a 1,048,576-bit high-speed static random access memory organized as 131,072 words by

BS62LV1025

Abstract: BS62LV1025DC BS62LV1025JC BS62LV1025PC BS62LV1025SC BS62LV1025SI BS62LV1025STC BS62LV1025STI BS62LV1025TC BS62LV1025TI
Contextual Info: BSI Very Low Power/Voltage CMOS SRAM 128K X 8 bit „ DESCRIPTION „ FEATURES • Vcc operation voltage : 4.5V ~ 5.5V • Very low power consumption : Vcc = 5.0V C-grade : 35mA Max. operating current I- grade : 40mA (Max.) operating current 0.4uA (Typ.) CMOS standby current

Contextual Info: 1 dt LOW POWER 3V CMOS SRAM 1 MEG 128Kx 8-BIT) ADVANCE INFORMATION IDT71L024 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • • • The IDT71L024 is a 1,048,576-bit very low-power Static RAM organized as 128K x 8. It is fabricated using IDT’s highreliability CMOS technology. Thisstate-of-the-arttechnology,

BS62LV1023

Abstract: BS62LV1023DC BS62LV1023JC BS62LV1023PC BS62LV1023SC BS62LV1023SI BS62LV1023STC BS62LV1023STI BS62LV1023TC BS62LV1023TI
Contextual Info: BSI Very Low Power/Voltage CMOS SRAM 128K X 8 bit „ DESCRIPTION „ FEATURES • Vcc operation voltage : 2.4V ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade : 20mA Max. operating current I- grade : 25mA (Max.) operating current 0.02uA (Typ.) CMOS standby current

Contextual Info: \dt LOW POWER 2V CMOS SRAM 1 MEG 128KX 8-BIT) ADVANCE INFORMATION IDT71T024 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • • • The IDT71T024 is a 1,048,576-bit very low-power Static RAM organized as 128K x 8. It is fabricated using ID Ts highreliability CMOS technology. This state-of-the-art technology,

BGA-48-0608

Abstract: BS616UV2021 BS616UV2021AC BS616UV2021AI BS616UV2021DC BS616UV2021DI
Contextual Info: BSI Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable BS616UV2021 „ DESCRIPTION „ FEATURES The BS616UV2021 is a high performance, Ultra low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits or 262,144 bytes by 8 bits selectable by CIO pin and operates from a wide

TBA 1404

Abstract: BGA-48-0608 BS616LV2021 BS616LV2021AC BS616LV2021AI BS616LV2021DC BS616LV2021DI
Contextual Info: BSI Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable BS616LV2021 „ DESCRIPTION „ FEATURES The BS616LV2021 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits or 262,144 bytes by 8 bits selectable by CIO pin and operates from a wide

KM681001A

Abstract: KM681001A-15 KM681001A-20 KM681001AJ D0237
Contextual Info: KM681001A CMOS SRAM 128K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17,20 ns Max. .• Low Power Dissipation Standby (TTL) The KM681001A is a 1,048,576-bit high-speed static random access memory organized as 131,072 words by

BGA-48-0608

Abstract: BS616LV2021 BS616LV2021AC BS616LV2021AI BS616LV2021DC BS616LV2021DI
Contextual Info: BSI Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable BS616LV2021 „ FEATURES „ DESCRIPTION • Very low operation voltage : 2.4 ~ 5.5V • Very low power consumption : Vcc = 3.0V C-grade: 20mA Max. operating current I-grade: 25mA (Max.) operating current