128K16 Search Results

Contextual Info: 128K16-XXX 128Kx16 SRAM / NOR FLASH MODULE SMD 5962-96900*  Weight FEATURES  Access Times of 35ns (SRAM) and 70ns (FLASH) • 128K16-H1X — 13 grams typical • 128K16-XG1UX1 — 5 grams typical  Access Times of 70ns (SRAM) and 120ns (FLASH)

Contextual Info: VZÀ WHITE /M IC R O E L E C T R O N IC S 128Kx16 SRAM/FLASH MODULE 128K16-XXX P R E LIM IN A R Y * FEATURES FLASH MEM ORY FEATURES • Access Times of 35nS SRAM and 70nS (FLASH) ■ 10,000 Erase/Program Cycles ■ Access Times of 70nS (SRAM) and 120nS (FLASH)

SD10

Abstract: SD13 SD14 SD15 WSF128K16-XXX scs 2003
Contextual Info: White Electronic Designs 128K16-XXX 128Kx16 SRAM/FLASH MODULE, SMD 5962-96900 FEATURES TTL Compatible Inputs and Outputs Access Times of 35ns SRAM and 70ns (FLASH) Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation Access Times of 70ns (SRAM) and 120ns (FLASH)

Contextual Info: M IC R O N I M T58LC 128K 16/18C5 128K X 16/18 S Y N C B U R S T SRAM TECHNOLOGY ir.C SYNCHRONOUS SRAM 128KX 16/18 SRAM +3.3V SUPPLY, PIPELINED A N D SELECTABLE B U R S T C O U N T E R FEATURES • • • • • • • • • • • • • • • •

Contextual Info: ADVANCE M 128K16/18B3 128K X 16/18 SYNCBURST SRAM |V/|ICRON +3.3V SUPPLY, FLOW-THROUGH AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • PIN ASSIGNMENT Top View F ast access tim es: 8.5, 9 ,1 0 ,1 1 and 12 F ast O E # a ccess tim es: 5 an d 6ns

Contextual Info: 128K16-XXX •lì Hi-R£LiASIÜTY PRODUCT 128Kx16 SRAM/FLASH MODULE, SMD 5962-96900 FEATURES ■ Com m ercial, Industrial and M ilita ry Tem perature Ranges ■ Access Tim es o f 35ns SRAM and 70ns (FLASH) ■ TTL C om patible Inputs and O utputs ■ Access Tim es o f 70ns (SRAM) and 120ns (FLASH)

ARINC 629 sim

Abstract: m38510/55501 AMP ARINC-629 SIM MT72038 smd cmos 4435 CQFP 240 arinc 629 controller P2X smd CERAMIC PIN GRID ARRAY CPGA lead frame arinc 629
Contextual Info: The Microelectronic Specialists Product SHORT FORM January 2001 AEROFLEX UTMC UT69151 SµMMIT DXE • UT69151 SµMMIT™ XTE ■ UT69151 SµMMIT™ RTE ■ 1760 ■ ■ ■ ■ ■ ■ ■ ■ 84,132 84 1.0E6* Q,V 5962-92118 ■ ■ ■ ■ ■ ■ ■

PG-FP5 Flash Memory Programmer

Abstract: 100 pin wqfn V850 Dual Voltage Flash JC3-L JH3-E P910 V850ES V850ES/jg3-L v850es/jg3-l NEC V850ES/JJ3
Contextual Info: V850ES/Jx3 V850ES/Jx3 LPC LPC Low (Low Pin Pin Count Count) Series Series V850ES/Jx3-H, V850ES/Jx3-L, V850ES/Jx3-E 32 bit Single-chip Microcontrollers Feature V850ES/Jx3-L Industry-Leading Low power consumption Ideal for Battery-Driven Systems Low power & Low voltage

A16 SMD

Abstract: SD10 SD13 SD14 SD15 WSF128K16-XXX
Contextual Info: White Electronic Designs 128K16-XXX 128Kx16 SRAM/FLASH MODULE, SMD 5962-96900 FEATURES „ Access Times of 35ns SRAM and 70ns (FLASH) „ Access Times of 70ns (SRAM) and 120ns (FLASH) „ Packaging „ TTL Compatible Inputs and Outputs „ Built-in Decoupling Caps and Multiple Ground Pins

AH 45

Abstract: WSF128K16-XXX
Contextual Info: 128K16-XXX 128Kx16 SRAM/FLASH MODULE, SMD 5962-96900 FEATURES n Access Times of 35ns SRAM and 70ns (FLASH) n Access Times of 70ns (SRAM) and 120ns (FLASH) n Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation n Weight • 128K16-XHX - 13 grams typical

AS4C256K16F0-60JC

Abstract: AS7C164-20PC AS7CI64-20JC AS4LC1M16ES-50TC 120TC 28K1 AS4C1440S 1SPC AS29F040-120TC as7c3
Contextual Info: í U' u i M 11; ! 1Ì ! ! i r 1 ¡ l i ü ’! 4 • -'¡si. í J Mij ! ; , t ‘ i M U I : i Synchronous SRAM part numbering system AS7C X XXXX Voltage: Blin k cram 3 25 18 (X -X X XX = 5V C M O S =3.3V CMOS =2.5V CMOS = 1.8V CMOS Density and organization

intel I196

Contextual Info: ADVANCE 128K +3.3V SUPPLY, PIPELINED AND SELECTABLE BURST COUNTER FEATURES PIN ASSIGNMENT Top View 100-Pin TQFP • Fast access tim es: 4 .5 ,5 , 6, 7, 8 an d 9ns • Fast O E # access tim e: 4 .5 ,5 an d 6n s • • • Sin g le + 3 .3 V + 1 0 % /-5 % p o w er su p p ly

Contextual Info: 128K16-XCX WHITE /MICROELECTRONICS 128Kx16 CMOS EEPROM PRELIMINARY* 128Kx16 BIT CMOS EEPROM MODULE FEATURES FIG. 1 PIN C O N FIG U R A T IO N • Read Access Times of 150, 200, 250, 300nS NICE 1 es E 2 1/015 E 3 1/014 E 4 1/013 E 5 1/012 E 6 1/011 E 7 1/010 E 8

Contextual Info: WSF256K8-XCX M/HITE /M IC RO ELEC TR O N IC S 256Kx8 SRAM/ FLASH MODULE * ADVANCED FEATURES FIG. 1 • A18H 1 ^ ■ 32 3 Vcc A16C 2 31 H W E A15C 3 30 3 A17 A12H 4 29 H A 1 4 A7C 5 28 H A13 A6C 6 A5C 7 27 H A 8 A4C 8 25 H A11 J E D E C S ta n d a rd , H e rm e tic C e ra m ic P a c k a g e , 3 2 pin D IP

SD14

Abstract: SD15 WSE128K16-XXX ED11 ED15 SD10 SD12 SD13
Contextual Info: White Electronic Designs 128K16-XXX PRELIMINARY* 128Kx16 SRAM/EEPROM MODULE FEATURES „ Access Times of 35ns SRAM and 150ns (EEPROM) „ Access Times of 45ns (SRAM) and 120ns (EEPROM) „ Access Times of 70ns (SRAM) and 300ns (EEPROM) „ Packaging • 66 pin, PGA Type, 1.075" square HIP, Hermetic

SD10

Abstract: SD13 SD14 SD15 WSF128K16-XXX TWS 434 pin diagram SD3 smd
Contextual Info: 128K16-XXX HI-RELIABILITY PRODUCT 128KX16 SRAM/FLASH MODULE, SMD 5962-96900 FEATURES • Commercial, Industrial and Military Temperature Ranges ■ Access Times of 35ns SRAM and 70ns (FLASH) ■ TTL Compatible Inputs and Outputs ■ Access Times of 70ns (SRAM) and 120ns (FLASH)

Contextual Info: a 128K16-XCX WHITE /MICROELECTRONICS 128Kx 16 CM OS EEPROM 128Kx16 BIT CMOS EEPROM MODULE FIG. 1 FEATURES PIN CONFIGURATION n c E 1 4 0 Zl Vcc cs C 2 39 □ w e 1/015 C 3 3 8 □ A16 1/014 C 4 3 7 □ A15 1/013 C 5 3 6 □ A14 1/012 C 6 3 5 □ A13 1/011 C 7

FD110

Contextual Info: a 128K16-XXX WHITE /MICROELECTRONICS 128Kx16 SRAM/FLASH MODULE, SMD 5962-96900 FEATURES • C om m ercial, Industrial and M i lita r y Te m p e ra tu re Ranges ■ A cce ss Tim es of 35ns SRAM and 70ns (FLASH) ■ TTL C om p a tib le Inputs and O utputs

Contextual Info: T T WEI 28K16-XCX M/HITE M IC R O E L E C T R O N IC S 128Kx16 CMOS EEPROM PRELIM IN A RY* 128Kx16 BIT C M O S EEPROM MODULE FIG. 1 FEATURES PIN CONFIGURATION 1 40 H V cc csC 2 1/015 C 3 39 □ W E 1/014 L 37 □ A 1 5 NCC 38 □ A 1 6 4 1/013 C 5 36 U A 1 4

Contextual Info: 128K16-XCX M/HITE /MICROELECTRONICS 128Kx16 CMOS EEPROM 128Kx16 BIT CMOS EEPROM MODULE FIG. 1 FEATURES PIN C O N F IG U R A T IO N NCE cs E l/ois E i/ O m E 1/013 E 1/012 E i/on E 1/01 o E i/os E I/Ob E GND E I/ 0 7 E I/Ob E I/ 0 5 E I/ 0 4 E I/ 0 3 E 1/02 E

Contextual Info: □ 128K16-XXX WHITE /M ICROELECTRONICS 128Kx16 SRAM/FLASH MODULE P R E L IM IN A R Y * FEATURES • ■ A c c e ss T im e s of 35nS S R A M and 70 nS (FLASH) Lo w N o is e O p e ra tio n ■ A c c e ss T im e s of 70 nS (S R A M ) and 120nS (FLASH)

ED11

Abstract: ED15 SD10 SD12 SD13 SD14 SD15 WSE128K16-XXX
Contextual Info: White Electronic Designs 128K16-XXX PRELIMINARY* 128Kx16 SRAM/EEPROM MODULE FEATURES Commercial, Industrial and Military Temperature Ranges Access Times of 35ns SRAM and 150ns (EEPROM) TTL Compatible Inputs and Outputs Access Times of 45ns (SRAM) and 120ns (EEPROM)

ED11

Abstract: SD10 SD12 SD13 SD14 SD15 WSE128K16-XXX ED07
Contextual Info: 128K16-XXX 128KX16 SRAM/EEPROM MODULE PRELIMINARY* FEATURES • TTL Compatible Inputs and Outputs ■ Access Times of 35ns SRAM and 150ns (EEPROM) ■ Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation ■ Access Times of 45ns (SRAM) and 120ns (EEPROM)

Contextual Info: a 128K16V-XH1X WHITE /MICROELECTRONICS 128Kx16 SRAM/FLASH 3.3V MODULE ADVANCED * FEATURES FLASH M EM ORY FEATURES • A ccess Tim es of 25ns S R A M and 70ns (FLASH) ■ 10,000 E rase/Program Cycles ■ A ccess Tim es of 70ns (SRAM) and 120ns (FLASH)