146T Search Results

Contextual Info: TIP140T/141T/142T TIP140T/141T/142T Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. • Industrial Use • Complement to TIP145T/146T/147T TO-220 1 1.Base 2.Collector 3.Emitter

Contextual Info: 7=12=1237 002^201 T • T -3»3 -Z P \ SGS-THOMSON poæiItLgOTiMOi TIP140T/141T/142T TIP145T/146T/147T S 6 S-TH0MS0N 3DE » LOW VOLTAGE HIGH CURRENT POWER DARLINGTON ADVANCE DATA ■ MONOLITHIC DARLINGTON CONFIGURA­ TION ■ LOW VOLTAGE « HIGH CURRENT ■ HIGH GAIN

tip141 equivalent

Abstract: TIP140 TIP141 TIP142 TIP145T TIP146T TIP147T tip142 equivalent
Contextual Info: TIP145T/146T/147T TIP145T/146T/147T Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A Min. • Industrial Use • Complement to TIP140T/141T/142T TO-220 1 1.Base 2.Collector 3.Emitter

147T

Abstract: TIP147T "Darlington Transistor" TIP146T darlington power transistor 10a pnp darlington to-220 10a TIP145T
Contextual Info: TIP145T/146T/147T PNP Epitaxial Silicon Darlington Transistor Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A Min. • Industrial Use • Complement to TIP140T/141T/142T Equivalent Circuit

TIP142T

Abstract: gto 5A NPN Transistor TO220 VCEO 60V IC 5a TIP140T TIP141T US Global Sat
Contextual Info: TIP140T / TIP141T / TIP142T NPN Epitaxial Silicon Darlington Transistor Features • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. Industrial Use Complement to TIP145T/146T/147T

Contextual Info: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 45T/146T/147T HIGH DC CURRENT GAIN - MIN hFE = 1000 @ VCE = - 4V, IC = - 5A T O -2 2 0 M O N O L IT H IC C O N S T R U C T IO N IN B A S E -E M IT T E R S H U N T R E S IS T O R S IN D U S T R IA L U S E C o m p le m e n t to T IP 1 4 0 T /1 4 1 T /1 4 2 T

Contextual Info: TIP145T/146T/147T TIP145T/146T/147T Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A Min. • Industrial Use • Complement to TIP140T/141T/142T 1 TO-220 PNP Epitaxial Silicon Darlington Transistor

TIP 41 transistor

Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP140T/141T/142T HIGH DC CURRENT GAIN-MIN hFE=1000 @ Vce=4V, lc = 5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS DINDUSTRIAL USE C om plem ent to TIP145T/146T/147T ABSOLUTE MAXIMUM RATINGS

tip142

Abstract: TIP140T TIP141T TIP142T 141T
Contextual Info: TIP140T/141T/142T TIP140T/141T/142T Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. • Industrial Use • Complement to TIP145T/146T/147T TO-220 1 1.Base 2.Collector 3.Emitter

GE636

Contextual Info: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP145T/146T/147T HIGH DC CURRENT GAIN-MIN hFE=1000 @ V ce = -4 V , lc = - 5 A T O -2 2 0 MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS DINDUSTRIAL USE C o m p le m e n t to TIP140T/141T/142T

Contextual Info: TIP140T / TIP141T / TIP142T NPN Epitaxial Silicon Darlington Transistor Features • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. Industrial Use Complement to TIP145T/146T/147T

NPN Transistor TO220 VCEO 60V IC 5a

Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP140T/141T/142T HIGH DC CURRENT GAIN - MIN hFE = 1000 @ VCE = 4V, IC = 5A TO-220 MONOLITHIC CONSTRUCTION IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE Complement to TIP145T/146T/147T ABSOLUTE MAXIMUM RATINGS Characteristic

T1P142T

Contextual Info: NPN EPITAXIAL SILICO N DARLINGTON TRAN SISTO R TIP140T/141T/142T HIGH DC CURRENT GAIN - MIN hFE = 1000 @ VCE = 4V, IC = 5A M O N O L IT H IC C O N S T R U C T IO N IN B A S E -E M IT T E R S H U N T R E S IS T O R S IN D U S T R IA L U S E Complement to TIP145T/146T/147T

142T

Contextual Info: TIP140T/141T/142T TIP140T/141T/142T Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. • Industrial Use • Complement to TIP145T/146T/147T 1 TO-220 NPN Epitaxial Silicon Darlington Transistor

TIP147T

Abstract: TIP145T TIP146T
Contextual Info: TIP145T/146T/147T TIP145T/146T/147T ◎ SEMIHOW REV.A0,Oct 2007 TIP145T/146T/147T TIP145T/146T/147T Monolithic Construction With Built In Base-Emitter Shunt Resistors PNP Epitaxial Silicon Darlington Transistor - High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A Min.

TIP146T

Contextual Info: PNP EPITAXIAL SILICO N DARLINGTON TRANSISTO R TIP145T/146T/147T HIGH DC CU RREN T GAIN - MIN hFE = 1000 @ Vce = -4V, IC = -5 A TO-220 M O N O L IT H IC C O N S T R U C T IO N IN B A S E -E M IT T E R S H U N T R E S I S T O R S IN D U S T R IA L U S E Com plem ent to T IP140T/141T/142T

Contextual Info: TIP145T/146T/147T TIP145T/146T/147T Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A Min. • Industrial Use • Complement to TIP140T/141T/142T TO-220 1 1.Base 2.Collector 3.Emitter

NPN Transistor VCEO 80V 100V

Abstract: tip141 equivalent TIP140 TIP140T TIP141 TIP141T TIP142 TIP142T tip142 equivalent
Contextual Info: TIP140T/141T/142T TIP140T/141T/142T Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. • Industrial Use • Complement to TIP145T/146T/147T TO-220 1 1.Base 2.Collector 3.Emitter

TIP145T

Abstract: TIP146T TIP147T
Contextual Info: TIP145T/146T/147T TIP145T/146T/147T Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A Min. • Industrial Use • Complement to TIP140T/141T/142T TO-220 1 1.Base 2.Collector 3.Emitter

CCIR 624-4 Composite

Abstract: ITU-601 ITU656 ITU-R601 ITUR656 MSM7652 MSM7652GS-2K CCIR601 ITU601
Contextual Info: in im el Pr This version: Jun. 1998 MSM7652 NTSC/PAL Digital Video Encoder GENERAL DESCRIPTION The MSM7652 is a digital NTSC/PAL encoder. By inputting digital image data conforming to ITU Rec. 656 or ITURBT 601, it outputs selected analog composite video signals, analog S video

MN39594

Abstract: SD14 SD15 VSP2264 VSP2264GSJ VSP2264GSJR panasonic SH-D
Contextual Info: VSP2264 CCD Signal Processor With Timing Generator for Digital Cameras Data Manual March 2003 Mixed Signal Products SLES059 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue

Contextual Info: STw8009 STw8019 Mobile video DENC Features • Two analog outputs 10 bits DAC with: – CVBS (Composite) output or Y/C (S-VHS) – NTSC-J, M & 4.43 & PAL-BDGHI, N, Nc, M support – 35 mA current driver ■ 8-bit digital interface input supporting both embedded and external synchro

74146

Abstract: ks 407 4322 020 9717 53RD bc 303 transistor KS 5814 200G N2960 W232 17680-B
Contextual Info: 0412V-3/01 2325 Orchard Parkway, San Jose, CA 95131 TEL 408 441-0311, FAX (408) 487-2600 North American Distributors USA ARROW ELECTRONICS 26010 Mureau Road Alabama 1406 W 14th Street ALL AMERICAN SEMICONDUCTOR Suite 101 Tempe, AZ 85281 Suite 120 Calabasas, CA 91302

CCIR Report 624-4

Abstract: itu Report 624-4 CCIR 624-4 digital cvbs pattern 146T ITU-R601 3x3 TRAY 8L36
Contextual Info: STw8009 STw8019 Mobile video DENC Features • Two analog outputs 10 bits DAC with: – CVBS (Composite) output or Y/C (S-VHS) – NTSC-J, M & 4.43 & PAL-BDGHI, N, Nc, M support – 35 mA current driver ■ 8-bit digital interface input supporting both embedded and external synchro