14N80 Search Results

Contextual Info: MegaMOSTMFET IXTH 14N80 VDSS = 800 V ID25 = 14 A RDS on = 0.70 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V VGS Continuous ±20 V VGSM Transient ±30 V

Contextual Info: EUXYS'^mlÊiÈÈSÈm. W SSÊœ p V DSS HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family IXFH 14N80 IXFH 15N80 ^D25 800 V 14 A 800 V 15 A t„ < 250 ns DS on 0.70 £2 0.60 Q Preliminary data Symbol Test Conditions v

MOSFET 11N80

Abstract: 11N80 MOSFET 14n80 ns800 13n80
Contextual Info: IXFH 11/13/14/15 N80 IXFM 11/13/14/15 N80 nixYS H iP e r F E T “ P o w e r M O S F E T IXFU/IXFM IXFH/IXFM IXFH/IXFM IXFH/IXFM N-Channel Enhancement Mode High dv/dt, Low t^, HDMOS Family 11N80 13N80 14N80 15N80 Symbol Test Conditions VDSS VDGR Tj = 25°C to 150°C

Contextual Info: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 14N80P IXFQ 14N80P IXFT 14N80P IXFV 14N80P IXFV 14N80PS VDSS ID25 RDS on trr = 800 V = 14 A Ω ≤ 720 mΩ ≤ 250 ms TO-247 (IXFH) Symbol Test Conditions

Contextual Info: □IXYS HiPerFET Power MOSFETs IXFH 14N80 IXFH15N80 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family V DSS ^D25 800 V 800 V 14 A 15 A R DS on 0.70 Q 0.60 Q trr < 250 ns Preliminary data Maximum Ratings Sym bol Test C onditions V Tj = 25°C to 150°C

Contextual Info: PolarHVTM HiPerFET Power MOSFET ISOPLUS 220TM IXFC 14N80P VDSS = 800 V = 8 A ID25 Ω RDS on ≤ 770 mΩ ≤ 250 ns trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS

Contextual Info: MegaMOSTMFET IXTH 14N80 VDSS = 800 V = 14 A ID25 RDS on = 0.70 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V VGS Continuous ±20 V VGSM Transient ±30 V

Contextual Info: HiPerFETTM Power MOSFETs IXFR 14N80 IsoPlus247TM Electrically Isolated Tab VDSS = 800 V ID25 = 14 A RDS(on) = 0.7 Ω N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

IXFC 14N80

Contextual Info: PolarHVTM HiPerFET Power MOSFET ISOPLUS 220TM IXFC 14N80P VDSS = 800 V = 8 A ID25 Ω RDS on ≤ 770 mΩ ≤ 250 ns trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS

Contextual Info: VDSS HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low t^, HDMOS™ Family IXFH 14N80 IXFH 15N80 p ^D 25 D S on 800 V 14 A 0.70 ß 800 V 15 A 0.60 Q trr < 250 ns P re lim in a ry data Symbol Test Conditions v vDGH T j = 25°C to 150°C

15N80

Contextual Info: HiPerFETTM Power MOSFETs IXFH 14N80 IXFH 15N80 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS ID25 RDS on 800 V 800 V 14 A 15 A 0.70 Ω 0.60 Ω trr < 250 ns Preliminary data Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ

125OC

Abstract: 14N80
Contextual Info: MegaMOSTMFET IXTH 14N80 VDSS = 800 V = 14 A ID25 RDS on = 0.70 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V VGS Continuous ±20 V VGSM Transient ±30 V

MOSFET 11N80

Abstract: 11n80 MOSFET 15N80 MOSFET 13N80 13n80 MOSFET 11N80 Data sheet 14N80 15N80 D-68623 N-Channel MOSFETs
Contextual Info: IXFH 11/13/14/15 N80 IXFM 11/13/14/15 N80 HiPerFET Power MOSFET TM IXFH/IXFM 11N80 IXFH/IXFM 13N80 IXFH/IXFM 14N80 IXFH/IXFM 15N80 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ

IXFQ14N80P

Abstract: 14n80 14n80p PLUS220SMD
Contextual Info: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 14N80P IXFQ 14N80P IXFT 14N80P IXFV 14N80P IXFV 14N80PS VDSS ID25 RDS on trr TO-247 (IXFH) Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ

Contextual Info: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family 14N80 IXFH15N80 Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V V VGS VGSM Continuous Transient

diode DSDI 9

Abstract: 10N60A IXLN35N120AU1 diode DSDI 12 IXLH35N120A DSP8-12A a1931 DSP8-08AS 95-06DA IXln35N120A
Contextual Info: □IXYS Contents Insulated Gate Bipolar Transistors IGBT Package style CE(aat) Type Page Tc = 25°C V 1. TO-247 AD 2. TO-220 AB 3. TO-264 AA 500 48 2.3 IXGH24N50B IXGH24N50BU1 4-5 6-7 500 75 2.3 IXGH50N50B 8-9 600 20 3.0 IXSH 10N60A 10-11 600 48 2.5 IXGH24N60B

IXFH14N80

Contextual Info: IXYS HiP«fEt Power MOSFETs ID25 DSS 800 V 800 V 14N80 IXFH15N80 DS on 14 A 0.70 Q 15 A 0.60 Q t„ <250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Preliminary data Symbol Test Conditions V OSS Voon ^ =25°Cto150°C Tj = 25°C to 150°C; RGS= 1 M ii

ixys ixfn 55n50

Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
Contextual Info: i , i - •*.*• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ | Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01

C1162

Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)

MJ 73

Abstract: 14n80
Contextual Info: VDSS HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family ID25 800 V 14 A 800 V 15 A trr £ 250 ns 14N80 IXFH15N80 RDS on 0.70 W 0.60 W Preliminary data Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW

scr 106d

Abstract: SCR bt 107 27-600R C 106D scr scr tag 12 BS9-04A tag br 203 BT106A TAG 92 bstb0226
Contextual Info: f l ✓ SCR IN METAL PACKAGE TO -3 9 T O - 18 0 ,6 A 15V 2N876 2N884 30V 2N877 2N 8 8 5 0 ,8 A RMS 2N3001 2N3005 TAG 0 ,8 A RMS 06Y BR 203 50V v v DRM RRM B L O C K IN G V O LT A G E 60V 2N878 2N886 2N3002 2N 3006 TAG 0 6 Y Y 100V 2N879 2N 887 2N 3 0 0 3 2N 3007

IXYS DS 145

Contextual Info: MegaMOSTMFET IXTH 14 N80 VDSS = 800 V I D25 = 14 A RDS on = 0.70 Ω N-Channel Enhancement Mode Preliminary data Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C 800 V V DGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V V GS Continuous ±20 V

sd 20n60

Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
Contextual Info: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06

7n60b

Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3