15A POWER TRANSISTOR FOR SMPS Search Results

AO4476

Contextual Info: AO4476 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4476 uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Standard Product

Contextual Info: AO4476 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4476/L uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications.

Contextual Info: AO4476 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4476 uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Standard Product

AO4476

Abstract: AO4476L RJA34 15a diode
Contextual Info: AO4476 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4476/L uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications.

AO4708

Contextual Info: AO4708 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AO4708 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,

Contextual Info: AO4708 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AO4708 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,

STTA1512P

Abstract: STTA1512PI
Contextual Info: STTA1512P/PI  TURBOSWITCH  ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS 15A VRRM 1200V trr typ 55ns VF (max) 1.9V K A IF(AV) FEATURES AND BENEFITS A A ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. VERY LOW OVERALL POWER LOSSES IN

15A POWER TRANSISTOR FOR SMPS

Abstract: STTA1512P STTA1512PI IGBT trr
Contextual Info: STTA1512P/PI  TURBOSWITCH  ”A”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATA MAIN PRODUCTS CHARACTERISTICS 15A VRRM 1200V trr typ 55ns VF (max) 1.9V K A IF(AV) FEATURES AND BENEFITS A A ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. VERY LOW OVERALL POWER LOSSES IN

Contextual Info: STTA1512P/PI TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 15A V rrm 1200V trr (typ) 55ns Vf 1.9V (max) FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. ■ VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION

Contextual Info: ACE6428B N-Channel Enhancement Mode Field Effect Transistor Description The ACE6428B uses advanced trench technology to provide excellent RDS ON , low gate charge. This device is suitable for use as a high side switch in SMPS and general purpose applications.

Contextual Info: rz ^ T SGS-THOMSON 7# M ûœ ËŒ O T «® S T T A 1 5 1 2 P/PI TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 15A V rrm 1200V trr (typ) 55ns Vf (max) PRELIMINARY DATA V 1.9V FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE

15A POWER TRANSISTOR FOR SMPS

Abstract: STTA1512P STTA1512PI IGBT trr 15A 400 - 600V FAST DIODES
Contextual Info: STTA1512P/PI  TURBOSWITCH  ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 15A VRRM 1200V trr (typ) 55ns VF (max) 1.9V K FEATURES AND BENEFITS ULTRA-FAST, SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION

15A POWER TRANSISTOR FOR SMPS

Abstract: TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE Noise diode mosfet 1200V 40A IGBT Transistor 1200V, 25A IGBT ultra fast morocco p3 transistor TRANSISTOR 100-6 fast recovery diode 600v 5A STTA1512P
Contextual Info: STTA1512P/PI  TURBOSWITCH  ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 15A VRRM 1200V trr (typ) 55ns VF (max) 1.9V K FEATURES AND BENEFITS ULTRA-FAST, SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION

TP181

Abstract: STTA1512P STTA1512PI 15A 400 - 600V FAST DIODES
Contextual Info: STTA1512P/PI TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 15A VRRM 1200V trr (typ) 55ns VF (max) 1.9V K FEATURES AND BENEFITS • ■ ■ ■ ■ ULTRA-FAST, SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION

30n60a4d

Abstract: mj 1504 transistor equivalent TA49345 HGT1N30N60A4D hyperfast diode reference guide TA49373 30n60* 227 30N60A4 LD26
Contextual Info: HGT1N30N60A4D 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode General Description Features The HGT1N30N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the

30N60A4D

Abstract: mj 1504 transistor equivalent 30N60A4 HGT1N30N60A4D 30n60* 227 transistor mj 1504 transistors mj 1504 TA49373
Contextual Info: HGT1N30N60A4D 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode General Description Features The HGT1N30N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the

TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE

Abstract: STTA1512P STTA1512PI
Contextual Info: STTA1512P/PI TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 15A VRRM 1200V trr (typ) 55ns VF (max) 1.9V K FEATURES AND BENEFITS • ■ ■ ■ ■ ULTRA-FAST, SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION

500W TRANSISTOR AUDIO AMPLIFIER

Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet
Contextual Info: Power for Computing Analog Discrete Interface & Logic Power Solutions for • Conversion · Distribution · Management · Minimization There’s a lot more to power than power management. Optimizing system power in computing applications requires innovative products for power conversion, distribution,

BUK454-500B

Abstract: 1S93 DM 321 diode 1S93
Contextual Info: PHILIPS INTERNATIONAL bSE D • 7110flSb DObHObl Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

Contextual Info: £ ÿ j SGS-THOM SON noœilLIOraeQïlBCi STTA1512P/PI TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 15A V rrm 1200V (typ) 55ns (max) 1.9V trr Vf PR ELIM IN A R Y DATA FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE

30N60A4D

Abstract: TA49373 30N60A4 HGTG30N60A4D TA49345 ICE 280 TA49343 30N60A
Contextual Info: HGTG30N60A4D Data Sheet January 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input

Contextual Info: AO4718 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET The AO4718 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent R DS ON ,and low gate charge. This device is suitable for use as a low side FET in

30n60a4d

Abstract: 30N60A4 TA49373 hgtp30n60a4 TA49343 HGTG30N60A4D LD26 TA49345 HGTG*N60A4D
Contextual Info: HGTG30N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input

30N60A4D

Contextual Info: HGTG30N60A4D Data Sheet September 2004 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input