15GHZ FT Search Results

plessey inductors

Abstract: polysilicon resistor High Speed Amplifiers DS00105
Contextual Info: HJB Complementary Bipolar Process Data Sheet DS00105 / June 2010 HJB is a double polysilicon trench isolated complementary bipolar process for RF applications in the range 900MHz to 2.4GHz. Key parameters minimum geometry device NPN PNP fT 19 GHz 15GHz CJC

Contextual Info: jU L 6 «* HITTITE MICROWAVE CORPORATION GaAs MMIC Voltage-Variable Attenuator HMC121 PRELIMINARY D ATASHEET, APRIL 1992 Features WIDE BANDWIDTH: DC-15GHZ LOW PHASE SHIFT VS ATTENUATION 30dB ATTENUATION RANGE Typical Performance SIMPLIFIED VOLTAGE CONTROL

DSH3

Contextual Info: R E V IS IO N S M E C H A N IC A L ?0 Inte r Face D im ensions M IL-STD-3 4 0A. F re q u e n c y Range <GHz DC to 15 V o lt R ating VRMS MAXI 9 S ea Leve l V 5 WR 335 DC - 12 ¿GHz 1 2 * - 15GHz Fig 310 2 (DSH3 & 304 2 (N) Recom m enced Mattng T o rq u e

A1203

Abstract: JS8853-AS
Contextual Info: TOSHIBA M IC R O W A V E P O W E R MICROWAVE SEMICONDUCTOR GaAs FET JS8853-AS TECHNICAL DATA FEATURES: • HIG H POW ER PldB = 28.0 dBm at f — 15 G Hz ■ SUITABLE FOR Ku-BAND , JOIM IM PLANTATIO N ■ HIG H GAIN GldB = 7 .0 dB at f = 15 G Hz ■ CHIP FORM

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET JS8850A-AS MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES: • ■ SUITABLE FOR Ku-BAND AMPLIFIER ION IM PLANTATIO N CH IP FORM H IG H POW ER p1dB = 2 1 5 dBm at f = 15 G H z H IG H G AIN GjdB = 9 '0 dB at f = 15 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25° C

Frequency

Abstract: RLNA1218G22
Contextual Info: RF-LAMBDA RLNA1218G22 The power beyond expectations Wide Band Low Noise Amplifier 12GHz~18GHz Feature Gain: 25dB Typical Noise Figure: 1.6dB Typical P1dB Output Power: +16dBm Typical Supply Voltage: +12V @ 200mA 50 Ohm Matched Input / Output

2sk270

Abstract: 2SJ96 2SK272 2SJ92 2SK260 2SK286 2SK247 2SK389 2SJ91 2SK261
Contextual Info: - 40 - 41 - % m tí & Ta=25'C u Cis (typ) (p F) Crs (typ) (pF) Vg s (V) typ max dB dB Vd s (V) f (Hz) Re <Q) R d s (ON) (max) Vg s (V) (0) •£ <D f& fé '14 Id (A) m £ & yfu 5* & m n m 10 82B SDG 2SK24G 7. 5 5 105A SDG 2SK247 800 -5 10 1.12 15 4 28A GDS

2SJ99

Abstract: 2SK354 2SK336 2sk3542 2SK356 2SK347 2SK354A 2SK353 2SK345 2sk351
Contextual Info: - 44 - m ? S £ tt m € ìà m & nu Ì i]/ K 2SK331 V * tt $ ft * (V) X I* (A) ft * P d /P c h g m Vg s (V) 100m (min) (max) V d s (A) (A) (V) (min) (max) V d s (V) (V) (V) C—MIC J N 1) -20 GDO 10m G 0.06m 1. 5m 10 2SK332 H # Diff J N D -40 GDS 10m G 0. 2/CH

FTLX8511D3

Abstract: GR-1089-CORE IEC-61000-4-2
Contextual Info: 850nm XFP Multi-Mode for 10GbE / 10GFC Duplex XFP Transceiver RoHS6 Compliant Features  Fully compliant to XFP MSA Rev.4.5  Support of IEEE 802.3ae 10GBASE-SR at 10.3125 Gbit/s  Compliance to Fibre Channel 1200-M5-SN-l, 1200-M5E-SN-l, 1200-M6-SN-l at 10.51875Gbit/s

HT-1-3

Contextual Info: m icRouinvE c o íiip o íie íít s DC to 15.0GHz Stripline Terminations Internally Mounted C L 353 □ GENERAL FEATURES i This term ination fo r stripline installation (HT-type) is a complete ultracom pact stripline term ination com bining our company's ultracom pact resistor

sn 16862

Abstract: EID1314-8
Contextual Info: EID1314-8 13.75-14.50 GHz 8-Watt Internally-Matched Power FET FEATURES • • • • • • • • 13.75-14.50 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 6.5 dB Power Gain at 1dB Compression 27% Power Added Efficiency

uhf modulator SSB ASK, PR ASK

Abstract: European 869MHz 49mhz transmitter and receiver VCO at 15GHZ isotropic antenna 49MHz FM transmitter practical circuit of FSK modulator 49MHz FM transceiver modulator at 15GHz pll fsk MODULATOR
Contextual Info: TA0028
 TA0028 RF2905/2915/2925: Silicon Transceiver Family for Low-Power Wireless Communications            A family of low-power RF transceivers has been developed for wireless data communications devices operating in the European 433MHz to 869MHz ISM bands

EID1314-5

Contextual Info: EID1314-5 13.75-14.50 GHz 5-Watt Internally-Matched Power FET FEATURES • • • • • • • • 13.75-14.50 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +37.5 dBm Output Power at 1dB Compression 7.5 dB Power Gain at 1dB Compression 35% Power Added Efficiency

EIC1314-4

Contextual Info: EIC1314-4 13.75-14.50 GHz 4-Watt Internally-Matched Power FET FEATURES • • • • • • • • 13.75-14.50 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.0 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression 25% Power Added Efficiency

EIC1314-4

Abstract: EIC1414-4
Contextual Info: EIC1414-4 14.00-14.50 GHz 4-Watt Internally-Matched Power FET FEATURES • • • • • • • • 14.00-14.50 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.0 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression 25% Power Added Efficiency

sn 16862

Abstract: pt 2097
Contextual Info: EID1314-8 13.75-14.50 GHz 8-Watt Internally-Matched Power FET FEATURES • • • • • • • • 13.75-14.50 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 6.5 dB Power Gain at 1dB Compression 27% Power Added Efficiency

Contextual Info: EID1314-5 13.75-14.50 GHz 5-Watt Internally-Matched Power FET FEATURES • • • • • • • • 13.75-14.50 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +37.5 dBm Output Power at 1dB Compression 7.5 dB Power Gain at 1dB Compression 35% Power Added Efficiency

Contextual Info: EID1414-8 14.00-14.50 GHz 8-Watt Internally-Matched Power FET FEATURES • • • • • • • • 14.00-14.50 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 6.5 dB Power Gain at 1dB Compression 27% Power Added Efficiency

Contextual Info: EID1414-5 14.00-14.50 GHz 5-Watt Internally-Matched Power FET FEATURES • • • • • • • • 14.00-14.50 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +37.5 dBm Output Power at 1dB Compression 7.5 dB Power Gain at 1dB Compression 35% Power Added Efficiency

EID1414-5

Contextual Info: EID1414A1-5 UPDATED 07/12/2007 14.00-14.50 GHz 5-Watt Internally-Matched Power FET FEATURES • • • • • • • 14.00-14.50 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +37.5 dBm Output Power at 1dB Compression 7.5 dB Power Gain at 1dB Compression

EID1314-8

Abstract: sn 16862
Contextual Info: EID1314A1-8 UPDATED 07/12/2007 13.75-14.50 GHz 8-Watt Internally-Matched Power FET FEATURES • • • • • • • 13.75-14.50 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 6.5 dB Power Gain at 1dB Compression

transistor 1346

Abstract: EID1414-8
Contextual Info: EID1414-8 14.00-14.50 GHz 8-Watt Internally-Matched Power FET FEATURES • • • • • • • • 14.00-14.50 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 6.5 dB Power Gain at 1dB Compression 27% Power Added Efficiency

phemt transistor

Abstract: MAG 1832 EID1414-8
Contextual Info: EID1414A1-8 UPDATED 07/12/2007 14.00-14.50 GHz 8-Watt Internally-Matched Power FET FEATURES • • • • • • • 14.00-14.50 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 6.5 dB Power Gain at 1dB Compression

EIC1414-4

Abstract: 175C EIC1314-4
Contextual Info: EIC1414-4 14.00-14.50GHz 4-Watt Internally-Matched Power FET UPDATED 08/21/2007 FEATURES • • • • • • • 14.00 –14.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.0 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression