18MAY09 Search Results

CTL2246-300-004

Contextual Info: 501-376 Qualification Test Report 18May09 Rev B CERTI-SEAL* Buried Service Wire Splice Closure 1. INTRODUCTION 1.1. Purpose Testing was perform ed on the CERTI-SEAL* buried service wire splice closure to determ ine its conform ance to the requirem ents of Product Specification 108-1673 Revision B.

GR-3151-CORE

Contextual Info: Product Specification 108-1673 18May09 Rev B CERTI-SEAL* Buried Service Wire Splice Closure 1. SCOPE 1.1. Content This specification covers perform ance, tests and quality requirem ents for the CERTI-SEAL* buried service wire splice closure. 1.2. Qualification

*4947ad

Contextual Info: Si4947ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.080 at VGS = - 10 V - 3.9 0.135 at VGS = - 4.5 V - 3.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs

Contextual Info: Si4953ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.053 at VGS = - 10 V - 4.9 0.090 at VGS = - 4.5 V - 3.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs

Contextual Info: Si4542DY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 6.9 0.035 at VGS = 4.5 V 5.8 0.032 at VGS = - 10 V - 6.1 0.045 at VGS = - 4.5 V - 5.1 • Halogen-free According to IEC 61249-2-21

Contextual Info: Si4511DY Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.0145 at VGS = 10 V 9.6 0.017 at VGS = 4.5 V 8.6 0.033 at VGS = - 4.5 V - 6.2 0.050 at VGS = - 2.5 V -5 • Halogen-free According to IEC 61249-2-21

Contextual Info: New Product SiS438DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0095 at VGS = 10 V 16 0.0125 at VGS = 4.5 V 16 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET

Si9410BDY

Abstract: Si9410BDY-T1-E3
Contextual Info: Si9410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.024 at VGS = 10 V 8.1 0.033 at VGS = 4.5 V 6.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC

Si4816DY

Abstract: Si4816DY-T1-E3
Contextual Info: Si4816DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 6.3 0.030 at VGS = 4.5 V 5.4 0.013 at VGS = 10 V 10 0.0185 at VGS = 4.5 V 8.6 • Halogen-free According to IEC 61249-2-21

Si4840DY

Abstract: Si4840DY-T1-E3 Si4840DY-T1-GE3 US2050
Contextual Info: Si4840DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 40 ID (A) 0.009 at VGS = 10 V 14 0.012 at VGS = 4.5 V 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

Si4628DY

Abstract: si4628
Contextual Info: Si4628DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0030 at VGS = 10 V 38 0.0038 at VGS = 4.5 V 33 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • SkyFET Monolithic TrenchFET® Gen III

Contextual Info: IHLP-5050FD-L1 Vishay Dale Low Profile, High Current Inductor FEATURES • • • • Shielded construction Frequency range up to 5.0 MHz Lowest DCR/µH, in this package size Handles high transient current spikes without saturation • Ultra low buzz noise, due to composite construction

Si4980DY

Contextual Info: Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 80 ID (A) 0.075 at VGS = 10 V 3.7 0.095 at VGS = 6.0 V 3.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC

Contextual Info: Si4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.023 at VGS = - 4.5 V - 7.5 - 12 0.030 at VGS = - 2.5 V - 6.7 0.045 at VGS = - 1.8 V - 5.4 • Halogen-free According to IEC 61249-2-21 Definition

P-channel power mosfet SO-8

Abstract: SI4544DY
Contextual Info: Si4544DY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC

Contextual Info: Si4501ADY Vishay Siliconix Complementary N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -8 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC

Contextual Info: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.025 at VGS = 4.5 V ± 7.1 0.035 at VGS = 2.5 V ± 6.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si4925BDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.025 at VGS = - 10 V - 7.1 0.041 at VGS = - 4.5 V - 5.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si4980DY

Contextual Info: Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 80 ID (A) 0.075 at VGS = 10 V 3.7 0.095 at VGS = 6.0 V 3.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC

Contextual Info: Si4818DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 6.3 0.030 at VGS = 4.5 V 5.4 0.0155 at VGS = 10 V 9.5 0.0205 at VGS = 4.5 V 8.2 • Halogen-free According to IEC 61249-2-21

Contextual Info: Si4830ADY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30

Contextual Info: Si4562DY Vishay Siliconix N- and P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.025 at VGS = 4.5 V 7.1 0.035 at VGS = 2.5 V 6.0 0.033 at VGS = - 4.5 V - 6.2 0.050 at VGS = - 2.5 V - 5.0 • Halogen-free According to IEC 61249-2-21

Contextual Info: Si4947ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.080 at VGS = - 10 V - 3.9 0.135 at VGS = - 4.5 V - 3.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs

Si4980DY

Abstract: Si4980DY-T1-E3
Contextual Info: Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 80 ID (A) 0.075 at VGS = 10 V 3.7 0.095 at VGS = 6.0 V 3.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC