1N1346A Search Results

RSF0805

Abstract: REC-12 RCF0805 UT513
Contextual Info: Standard Recovery Rectifiers REC 1N1346A 1N1346B 1N2276 1N2495 60S4 6A4 DR754 UTR4440 1N1347 1N1347A 1N1347B 1N2277 1N2496 EOSS 1N1348 1N1348A 1N1348B 1N2278 1N2497 60SE 6A6 DR756 1N2279 60S8 6A8 DR758 1N2280 60S10 6A10 DR7510 1N2281 UT5105 UT5110 UT5120 UT5130

Contextual Info: 1N1346A Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current6.0 @Temp (øC) (Test Condition)150Ï V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.150 V(FM) Max.(V) Forward Voltage.64í @I(FM) (A) (Test Condition)6.0 @Temp. (øC) (Test Condition)150Ï

Contextual Info: STANDARD RECOVERY RECTIFIERS STUD BASE DO-4 & DO-5 lQ RATING TO 60 AMPS FEATURES: DESCRIPTION • Hermetic Seal This is a series of general purpose rectifiers with average forward current ratings up to 60 Amps. They are for general purpose use in power supply and other rectification applications.

1N1342

Abstract: 1N1199 1N1202 1N1124 1N1201 1N1581 1N13468 1N1348 1N1200A 1N1200
Contextual Info: 8 3D 00 172] 8136650 S E M I C O N D U C T OR S INC A3 Silicon Power Rectifiers D E | fll3btiSD Ú/- J 7 QD0D17E fl 6 AMP - D04 Peak Reverse Voltage JEDEC Numbers 1N1341, 1N1612, 1N1342, 1N1613, 1N1341 A, 1N1341B, 1N1581, 1N2228, 1N2491 1N1342A, 1N1342B, 1N1582,

1N2222A

Abstract: 1n2222 IN2071A 1N3934 1N3578 IN222 IN1342 IN5054 IN5053 1N3549
Contextual Info: xcmicron - _ SB._ 27E » • MäbTEMb 00005=17 MäbTEMb O OOOST? s em ic o n d u c to r s S e m itr o n ic s C o r p . IN T E X / S E M IT R O N IC S silicon rectifiers cont’d miniature axial lead silicon rectifiers T»» 1N3241 1N3242 1N3243 1N3244

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

1N3610

Abstract: 1N1118 1N2222 1N1502 1N1120 1N39 1N12068 HA 12058 1N1119 1N1227
Contextual Info: STANDARD RECOVERY RECTIFIERS STUD BASE DO-4 & DO-5 lQ RATING TO 60 AMPS FEATURES: DESCRIPTION • Hermetic Seal • High Temperature Operation • Metallurgical^ Bonded This is a series of general purpose rectifiers with average forward current ratings up to 60 Amps. They are for general purpose use in

LT3973-3.3

Abstract: IN4012 in401 IN1730 IN1118 IN3288 in2063 IM361 IN-17 1N1731
Contextual Info: ^ discrete devices | jemitronicr hot line TO LL FREE NUM BER 800-777-3960 silicon rectifiers stud mounted silicon power rectifiers DO-4 case style — Maximum Peak Reverse Voltage volts Type Maximum Average Forward Current (Amps) @ Case Temp. (°C ) Maximum

GE SCR Manual

Abstract: GE SCR 1000 AMP SCR 214 scr stack General electric SCR scr 106 GE SCR 1000 SCR Phase Control IC SCR nomenclature, General electric SCR 60A 500V
Contextual Info: SCR Medium & High Current Modules NOMENCLATURE CIO 12BA1AD1 is a 200V, fu ll wave back to back bridge connected CIO c e lls on type 12 F ins, capable o f c o n t r o llin g 4.7 amp average per SCR in free a ir o r 6.2 amp average per ce ll with 1000 lin e a r feet per minute forced a ir.

1N5331 Diode

Abstract: A78A 1N1612 1N5331 in1200A IN3879
Contextual Info: FAST RECOVERY RECTIFIERS SELECTOR GUIDE 2000 1500 1000 900 600 « 700 !j 600 § 500 s 400 5 300 § 200 z H _l O > fOO 90 80 70 60 50 I 3 6 12 20 25 30 100 140 2 5 0 4 0 0 750 IK AVERAGE C U R R EN T -A M PER ES STANDARD RECTIFIERS SELECTOR GUIDE 300 0 V3 2000

vat 2000 ge

Abstract: SCR Handbook, General electric 1N1702 4JA4 1N1614 Diodes 1N5331 Diode SCR Applications Handbook silicon controlled rectifier 1N1612 1N5331
Contextual Info: FAST R EC O VER Y RECTIFIERS SELECTOR GUIDE 2000 1500 1000 « 700 900 600 !j 600 § 500 s z 400 5 300 § 200 H_l O > fOO 90 80 70 60 50 I 3 6 12 20 25 30 100 140 2 5 0 4 0 0 750 IK AVERAG E C U R R E N T -A M P E R E S S T A N D A R D RECTIFIERS SELECTOR GUIDE

1N1346

Abstract: 1N1126 1N1345B 1N1346A S20100 S20120 S2020 S2040 S2060
Contextual Info: Silicon Power Rectifier S / R 2 0 Series Dim Inches M illim e te r M inim um M axim um M inim um M axim um N otes N otes: 1. 1 0 - 3 2 UNF3A 2. Full th re a d s w ithin 2 1 / 2 th re a d s 3. S ta n d a rd P o la rity; S tu d Is C atho d e Reverse P o la rity: S tu d is

insulated stud rectifier

Abstract: 1N1344RA EMISSIVITY-90 INII99A-INI206A 1N1345RA 1N1341A 1N1341RA 1N1342A 1N1342RA 1N1343RA
Contextual Info: Silicon IN1341A-48A IN1341RA-48RA Rectifiers MEDIUM CURRENT 6A TYPE These stud m ounted diffused junction silicon rectifiers, designed to m eet M IL -E -1/1108 are recommended for all rectifier applications in the 2 to 8 ampere range. A high junction tem ­

BROWN BOVERI

Abstract: B 170 BROWN BOVERI 1N1124 1N1344A N1346 S2010 1N1614 Diodes N1124 S2060 1N1342
Contextual Info: BROWN BOVERI «FMC B R O W N , B O V E R I & CI E AKTIENGESELLSCHAFT MANNHEIM Silicon Avalanche Power Rectifiers BBC Geschäftsbereich Halbleiter und Stromrichter Telefon 06206 503-1, Telex 04-65 727 Postfach 200, D-6840 Lampertheim Series 20 16 Amperes Average

DIODE 1N1343

Abstract: 1N120S "general diode corporation" 1N1201B 1N1202 1N1202A 1N1202B 1N1203 1N1203A 1N1203B
Contextual Info: 3869720 GENE R AL DIODE CO RP ¿Tb 86D 00324 D r-o i'i 7 Ü>iF| 3 0 ^ 7 2 0 □0DD354 3 STUD MOUNTED SILICON POWER RECTIFIERS . . . cont’d TT * TYPE \ 1N1201B 1N1202 1N1202A 1N1202B 1N12Q3 la 1 \ 2$ 1 '53 rn Ö Ö Do-4 Do-4 Do-4 Do-4 Do-4 ISO 200 200 200

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

1N1115

Abstract: 1N255 MR1121 1N1118 1N1540 1N254 1N1116 MR1120R 1N1117 1N611
Contextual Info: MR1 120 th ru MR1 126 SILICON MR1128 MR1130 Medium-current silicon rectifiers featurehigh surge current capacity, and low forward voltage drop. CASE 245 (DO-4) M A X IM U M R A T IN G S Rating Symbol MR MR MR MR MR MR MR MR MR 1120 1121 1122 1123 1124 1125 1126 1128 1130

1N1120

Abstract: 1N2484 1N342 1N2226
Contextual Info: - x _ S B . _ _ _ c m i c r o 2 7 E » MäbTEMb • M äb T EM b IN T E X / S E M IT R O N IC S silicon rectifiers cont’d miniature axial lead silicon rectifiers T »» 1N3241 1N3242 1N3243 1N3244 1N3245 600 800 ■ 1000 1200 1500

wiring diagram audio amplifier ic 6283

Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
Contextual Info: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor

IN3492

Abstract: sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r
Contextual Info: NIAX VAX U E S 0 2 5 ° D IO D E Vw PRV If Vf IR T Y P E u S E 0A5 100 .3 5 1 .3 30 G GP 0 A6 60 .3 5 1 .3 9 .0 G GP 0A7 30 .2 5 1 .7 6 .0 G SW O A IO 30 1 .0 .9 5 600 G SW OA3I 85 12 0 .7 40 G GP 0A47 30 .1 5 .6 5 10 G 0A70 2 2 .5 . 15 .2 5 30 G RF OA71 90

1N1345RA

Abstract: 1N1341RA 1N1344RA 1N1347R A78A 1N1612 1N5331 1N1702
Contextual Info: FAST R EC O VER Y RECTIFIERS SELECTOR GUIDE 2000 1500 1000 900 600 « 700 !j 600 § 500 s z 400 5 300 § 200 H O> _l fOO 90 80 70 60 50 I 3 6 12 20 25 3 0 100 140 2 5 0 4 0 0 75 0 IK AVERAGE CURRENT-AMPERES S T A N D A R D RECTIFIERS SELECTOR GUIDE 3000 2000