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    1FP TRANSISTOR Search Results

    1FP TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    1FP TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1K60

    Abstract: Z21805C B1010 VR1B Z21805 NE 5532 LT1028 1k80 z2180 2SC2546
    Text: This device is intended for microphone input stages optimised for low source impedances 500W - 1kW , typical of low Rbb bipolar transistors and operational amplifiers such as the LT1028. It can also be used for line level inputs when used in current mode active input circuits.


    Original     		PDF LT1028. 22k//1n0 100kHz 120kHz -10dBu, 10kHz) 2SC2546 2SC2240 140kHz -126dBu 1K60 Z21805C B1010 VR1B Z21805 NE 5532 LT1028 1k80 z2180 2SC2546

    Z21808C

    Abstract: B1010 NE5534 Z21808
    Text: This device is intended for microphone input stages optimised for medium source impedance ~5kW , typical of medium Rbb bipolar transistors and operational amplifiers such as the NE5534. It can also be used for line level inputs when used in current mode active input circuits.


    Original     		PDF NE5534. -10dBu, 10kHz) B1010 Z21808C: 100k//180p 65kHz 80kHz 120dB Z21808C Z21808C B1010 NE5534 Z21808

    Z21808

    Abstract: Z21808E B1010 NE5534
    Text: This device is intended for microphone input stages optimised for medium source impedance ~5kW , typical of medium Rbb bipolar transistors and operational amplifiers such as the NE5534. It can also be used for line level inputs when used in current mode active input circuits.


    Original     		PDF NE5534. -10dBu, 10kHz) Z21808: B1010 100k//180p 65kHz 80kHz 120dB Z21808E Z21808 Z21808E B1010 NE5534

    B1010

    Abstract: LT1028
    Text: This device is intended for microphone input stages optimised for low source impedances 500W - 1kW , typical of low Rbb bipolar transistors and operational amplifiers such as the LT1028. It can also be used for line level inputs when used in current mode active input circuits.


    Original     		PDF LT1028. 22k//1n0 100kHz 120kHz -10dBu, 10kHz) 110dB B1010 Z21805E B1010 LT1028

    t06 marking sot23

    Abstract: BC857 3ft marking 6Ct SOT23 SOT89 marking cec marking da sot89 MARKING BL SOT89 SOT23 "Marking Code" t04 SOT89 MARKING CODE marking t04 sot23 marking 1G SOT23
    Text: Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER PACKAGE MARKING CODE PACKAGE 2PA1576Q FtQ SC-70 BC808W 5Ht SOT323 2PA1576R FtR SC-70 BC808-16 5Ep SOT23 2PA1576S FtS SC-70 BC808-16W


    Original     		PDF 2PA1576Q SC-70 BC808W OT323 2PA1576R BC808-16 2PA1576S BC808-16W t06 marking sot23 BC857 3ft marking 6Ct SOT23 SOT89 marking cec marking da sot89 MARKING BL SOT89 SOT23 "Marking Code" t04 SOT89 MARKING CODE marking t04 sot23 marking 1G SOT23

    transistor 1fp

    Abstract: transistor 1Bp BC848 1FP transistor BC847 1Bp transistor NPN BC846B SOT23 BC846 1Lp marking BC846B
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC846; BC847; BC848 NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 12 Philips Semiconductors Product specification


    Original     		PDF M3D088 BC846; BC847; BC848 BC856; BC857; BC858. transistor 1fp transistor 1Bp BC848 1FP transistor BC847 1Bp transistor NPN BC846B SOT23 BC846 1Lp marking BC846B

    philips diode PH 33D

    Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817


    Original     		PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A philips diode PH 33D PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m

    philips diode PH 33D

    Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


    Original     		PDF 1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE

    marking A4t sot23

    Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


    Original     		PDF 1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23

    marking A4t sot23

    Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE


    Original     		PDF 1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p

    common base amplifier

    Abstract: No abstract text available
    Text: GAE GREAT AMERICAN ELECTROINCS MSC1075M/M RP0912-75 Silicon NPN pulse power transistor MSC1075M/MRP0912-75 is designed for Class B and C common base amplifier applications in short pulse transmitters or radio location stations, telemetry and DME systems. Output Power:


    OCR Scan     		PDF MSC1075M/MRP0912-75 MSC1075M/MRP0912-75 FO-57C 25tion common base amplifier

    SOT-23 1GP

    Abstract: KP SOT23 Code KP SOT23 1Fp on
    Text: BC846 BC847 BC848 FOR MORE DETAILED INFORMATION SEE LATEST ISSUE OF HANDBOOK SC04 OR DATA SHEET SILICON PLANAR EPITAXIAL TRANSISTORS General purpose n-p-n transistors in a plastic SOT-23 package. Q U IC K R EFE R E N C E D A T A BC847 BC848 80 50 30 V V C o lle c to r-e m itte r voltage V b e = 0


    OCR Scan     		PDF BC846 BC847 BC848 OT-23 OT-23. BC848 SOT-23 1GP KP SOT23 Code KP SOT23 1Fp on

    transistor 1fp

    Abstract: 52ga 414n 53m diode
    Text: HÌLS1S1M/S2M/53M MINI MOLD TYPE PHOTO COUPLER • OUTLINE typ. ■ GENERAL DESCRIPTION The NJL5151M series are small package dual-in-line photo couplers, which consist of high power infrared emitting diode and high sensitve Si photo transistor. IL standards (File N o.E8256I)


    OCR Scan     		PDF LS1S1M/S2M/53M NJL5151M E8256I) 52M/53M NJL5151M/52M/53M transistor 1fp 52ga 414n 53m diode

    Untitled

    Abstract: No abstract text available
    Text: bbSB^Bl QQ24453 MM•=! H A P X N AUER PHILIPS/DISCRETE BC846 BC847 BC848 b7E D J V. SILICON PLANAR EPITAXIAL TRANSISTORS General purpose n-p-n transistors in a plastic SOT-23 package. QUICK REFERENCE DATA BC846 Collector-emitter voltage V gE = 0 BC847 BC848


    OCR Scan     		PDF QQ24453 BC846 BC847 BC848 OT-23 QQ244S7

    8C847

    Abstract: BC846 BC846A BC846B BC847 BC847A BC847B BC847C BC848 BC848A
    Text: 711 Gfl2b O ü b ö m ^ BC846 BC847 BC848 247 H P H I N SILICON PLANAR EPITAXIAL TRANSISTORS General purpose n-p-n transistors in a plastic SOT-23 package. QUICK REFERENCE D A TA BC846 BC847 BC848 Collector-emitter voltage V g£ = 0 V CES max. 80 50 30 V


    OCR Scan     		PDF 711GflPb BC846 BC847 BC848 OT-23 BC848 35MHz 8C847 BC846A BC846B BC847A BC847B BC847C BC848A

    TLP3

    Abstract: No abstract text available
    Text: GaAs IRED a PHOTO-TRANSISTOR TLP330 TLP330 PROGRAM MABLE CONTROLLERS A C /D C -IN P U T MODULE TELECOM M UNICATION The TOSHIBA TLP330 consists of a photo-transistor optically coupled to two gallium arsenide infrared em itting diode connected inverse parallel in a six lead plastic DIP package. This is suitable for


    OCR Scan     		PDF TLP330 TLP330) TLP330 150mA. 150mA 5000Vrms UL1577, E67349 l00//a TLP3

    BUK436-60A

    Abstract: MC 151 transistor 100-P BUK436-60B
    Text: PHILIPS INTERNA TION AL bSE D • 711D6Sb 00t.3flTl 3^b ■ P H I N Philips Sem iconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode iield-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF 711D6Sb BUK436-60A/B BUK436 711062b 00b3fi BUK436-60A MC 151 transistor 100-P BUK436-60B

    SOT89 MARKING CODE 3D

    Abstract: sot89 mark code AE sot23 mark code AE 3D sot23 SOT89 marking cec SOT89 MARKING CODE 43 marking 1p sot23 sot23 p04 marking marking P1R SOT89 MARKING 5G
    Text: Philips Sem iconductors Small-signal Transistors Marking MARKING LIST Types in SC59, SC70, SOT23, SOT89, SOT143, SOT223 and SOT323 packages are marked with a code as listed in the following tables. The actual type number and data code are on the packing. MARK


    OCR Scan     		PDF OT143, OT223 OT323 PXTA27 BCX51 BCW60A BCW60B BCX51-10 BCW60C BCX51-16 SOT89 MARKING CODE 3D sot89 mark code AE sot23 mark code AE 3D sot23 SOT89 marking cec SOT89 MARKING CODE 43 marking 1p sot23 sot23 p04 marking marking P1R SOT89 MARKING 5G

    ic 4PC

    Abstract: 115b1
    Text: GaAs IRED a PHOTO-TRANSISTOR TLP320,-2,-4 TENTATIVE DATA T L P 3 2 0 U nit in mm T E L E C O M M U N IC A T IO N TLP320 OFFICE M A C H IN E ~ A T ELEP H O N E USE E Q U IP M E N T 3 The TOSHIBA TLP320, -2 and -4 consists of a photo-transistor optically coupled to a gallium arsenide infrared em itting diode.


    OCR Scan     		PDF TLP320 TLP320 TLP320, TLP320-2 TLP320-4 150mA. 150mA 5000Vrm ic 4PC 115b1

    BUK416-100AE

    Abstract: YT150 30444 BUK416-100BE BUK416-1OOAE mkp-x
    Text: N AMER P H I L I P S / D I S C R E T E L^E D • G03D440 DET HIAPX Product Specification Philips Semiconductors BU K416-1OOAE/BE PowerM OS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. The device Is intended for use in


    OCR Scan     		PDF G03D440 BUK416-1OOAE/BE OT227B BUK416 bb53R31 BUK416-1OO0E BUK416-100AE YT150 30444 BUK416-100BE BUK416-1OOAE mkp-x

    BUK657

    Abstract: BUK657-500A BUK657-500B BUK657-500C T0220AB
    Text: N AMER PHILIPS/DISCRETE 5SE D ^53^31 QD20710 T PowerMOS transistor Fast Recovery Diode FET BUK657-500A BUK657-500B BUK657-500C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery


    OCR Scan     		PDF fab53131 D2D71D BUK657-500A BUK657-500B BUK657-500C BUK657 -500A -500B -500C ID/100 BUK657-500C T0220AB

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GaAs IRED & PHOTO-TRANSISTOR TLP630 Programmable Controllers AC/DC-Input Module Telecommunication The Toshiba TLP630 consists of a photo-transistor optically coupled to two gallium arsenide infrared emitting diode connected inverse parallel in a six lead


    OCR Scan     		PDF TLP630 5000Vrms UL1577, E67349 TLP630

    6Bp SMD

    Abstract: code marking 6Cp sot-23 sot-23 Marking k1p smd 1Gp d2p smd code smd 1Bp SS SMD MARKING SOT23 smd U1p smd marking code BC817 p1g SMD
    Text: General Purpose SM D * NPN Transistors 11 General Purpose SMD NPN Transistors Description Features Philips C om ponents general purpose transistors combine the highest quality standards with state-of-the-art pro­ duction equipment to fulfill the need for generic, low-cost


    OCR Scan     		PDF OT-23 OT-89 OT-143 OT-223 6Bp SMD code marking 6Cp sot-23 sot-23 Marking k1p smd 1Gp d2p smd code smd 1Bp SS SMD MARKING SOT23 smd U1p smd marking code BC817 p1g SMD

    marking code p07 sot89

    Abstract: marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F
    Text: MARKING CODES Page T y p e n u m b e r to m arking c o d e c ro s s re fe re n ce 68 M ark in g co d e to type n u m b er c ro s s re fe re n ce 74 Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER I MARKING


    OCR Scan     		PDF 2PA1576Q 2PA1576R 2PA1576S 2PA17 2PA1774R 2PA1774S 2PB709AQ 2PB709AR 2PB709AS 2PB710AQ marking code p07 sot89 marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F