1N5625 V Search Results

1N5625 Specifications

Abstract: 1N5625 1N5625 v LM390
Contextual Info: 1N5625 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 1N5625 Availability Online Store

Contextual Info: DIGITRON SEMICONDUCTORS 1N5624-1N5627 GLASS PASSIVATED RECTIFIER MAXIMUM RATINGS and ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise noted Characteristics Symbol 1N5624 1N5625 1N5626 1N5627 Unit Maximum peak repetitive reverse voltage VRRM 200 400

Contextual Info: 1N5624, 1N5625, 1N5626, 1N5627 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Controlled avalanche characteristics • Low reverse current • High surge current loading

Contextual Info: 1N5624, 1N5625, 1N5626, 1N5627 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Controlled avalanche characteristics • Low reverse current • High surge current loading

DIODE 1N5625 V

Abstract: vishay 1N5625 DIODE 1N5625 1N5625 diode 1N5625 1N5625 Specifications 1N5626
Contextual Info: 1N5624, 1N5625, 1N5626, 1N5627 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Controlled avalanche characteristics • Low reverse current • High surge current loading

1N5625

Abstract: 1N5625 diode diode 1n5624 vishay 1N5625 1N5626
Contextual Info: 1N5624, 1N5625, 1N5626, 1N5627 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Controlled avalanche characteristics • Low reverse current • High surge current loading

Transistor C107m

Abstract: t25000 SCR TRANSISTOR 8TA41600B T106F1 SCR SC160D TIC106M SCR SC136B Triac Q2006R5 BTA417008
Contextual Info: "'ART VJMEEF INDEX Part No. 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N40Q7 1N4622 1N4732 1N4733 1N4744 1N5225 1N5400 1N5401 1N5402 1N5404 1N5405 1N5625 1N750 2N0918 2N1770 2N1771 2N1772 2N1773 2N1774 2N1775 2N1776 2N1777 2N1778 2N1842 2N1843 2N1844 2N1845

1N5624

Abstract: 1N5625 1N5626 1N5627 BYW82 BYW83 BYW84 BYW85 BYW86
Contextual Info: BYW82.BYW86 TELEFUNKEN Semiconductors Silicon Mesa Rectifiers Features D Glass passivated junction D Hermetically sealed package D Controlled avalanche characteristics D Low reverse current D High surge current loading D Electrically equivalent diodes: BYW82 – 1N5624 BYW83 – 1N5625

BYW86

Abstract: DIODE 1N5625 V 1N5624 1N5625 1N5626 1N5627 BYW82 BYW83 BYW84 BYW85
Contextual Info: BYW82.BYW86 Vishay Telefunken Silicon Mesa Rectifiers Features D D D D D D Glass passivated junction Hermetically sealed package Controlled avalanche characteristics Low reverse current High surge current loading Electrically equivalent diodes: BYW82 – 1N5624 BYW83 – 1N5625

diode 1n5624

Abstract: 1N5624 1N5625 1N5626 1N5627 BYW82 BYW83 BYW84 BYW85 BYW86
Contextual Info: BYW82.BYW86 Silicon Mesa Rectifiers Features D D D D D D Glass passivated junction Hermetically sealed package Controlled avalanche characteristics Low reverse current High surge current loading Electrically equivalent diodes: BYW82 – 1N5624 BYW83 – 1N5625

1N5625

Abstract: 1N5405 1n5401 1n5402 1N5404 1N5404 equivalent 1N5406 1N5400 1N5403 CPR2-010
Contextual Info: Rectifiers, General Purpose Continued IO (AMPS) 2.0 3.0 @ TA (oC) 75 50 75 55 75 IFSM (AMPS) 50 50 200 100 125 CASE GPR-1A DO-15 DO-201AD GPR-3A VRRM (VOLTS) 50 1N5400 100 CPR2-010 CR2-010 1N5401 200 CPR2-020 CR2-020 1N5402 300 400 1N5550 1N5624 1N5551 1N5625

Contextual Info: 1N5625+JAN Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current3.0 @Temp (øC) (Test Condition)70’ V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.125 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)3.0 @Temp. (øC) (Test Condition)25’

1N5625

Abstract: 1N5625 v
Contextual Info: 1N5624 1N5625 1N5626 1N5627 w w w. c e n t r a l s e m i . c o m SILICON GLASS PASSIVATED RECTIFIERS 5.0 AMP, 200 THRU 800 VOLT DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5624 series types are silicon rectifiers mounted in a hermetically sealed, glass passivated package, designed for general

1N5405

Abstract: 1N5625 1N5400 1N5401 1N5402 1N5403 CPR2-010 CPR2-020 CPR2-040 CR2-010
Contextual Info: Rectifiers, General Purpose Continued IO (AMPS) 2.0 3.0 @ TA (oC) 75 50 75 55 75 IFSM (AMPS) 50 50 200 100 125 CASE GPR-1A DO-15 DO-201AD GPR-3A VRRM (VOLTS) 50 1N5400 100 CPR2-010 CR2-010 1N5401 200 CPR2-020 CR2-020 1N5402 300 400 1N5550 1N5624 1N5551 1N5625

1N5624

Abstract: diode 1n5624 1N5625 1N5625 v 1N5626 DIODE 1N5625 V 1N5627
Contextual Info: HARRIS SENICON] S E CT OR i l i H a <è 3 semiconductor böE r r i s D H 43 GS 27 1 D05 0 3D 5 123 H H A S 1 N 5 6 2 4 , 1 N 5 6 2 5 j N 5 6 2 6 , 1 N 5 6 2 7 3A, 200V - 800V Diodes December 1993 Features Package AL-3 TOP VIEW • High Temperature Metallurgically Bbonded, No Com­

1N5625

Abstract: 1n5627
Contextual Info: 1N5624 thru 1N5627 Vishay Semiconductors Glass Passivated Junction Rectifier Features • Cavity-free glass passivated junction • High temperature metallurgically bonded construction • Hermetically sealed package • Capable of meeting environmental standards of

1N5625

Abstract: 1N5624
Contextual Info: 1N5624 thru 1N5627 Vishay Semiconductors Glass Passivated Junction Rectifier Features • Cavity-free glass passivated junction • High temperature metallurgically bonded construction • Hermetically sealed package • Capable of meeting environmental standards of

in5626

Abstract: IN5627 IN5624 1N5625 SPD5628 C107V
Contextual Info: SOLID STATE DEVICES INC 15E D f l A3b b D ll 0001Ô05 2 | r-£>/-/r 1N5624 THRU SPD5628 3 AMP STANDARD RECOVERY RECTIFIER 200-1000 VOLTS CASE STYLE 14830 Valley View Avenue La Mirada. California 90638 213 921-9660 TWX 910-583-4807 F A X S I^I^g ô FEATURES

IN5624

Abstract: in5626 D5043 1N5625 1N5626 1N5625 PIV 1N5624 1N5627 SPD5628 1N5625 v
Contextual Info: SOLID STATE DEVICES INC 15E D | ö 3 bL Gll OOOlñDS 2 | 1N5624 THRU SPD5628 3 AMP STANDARD RECOVERY RECTIFIER 200-1000 VOLTS CASE STYLE 14830 Valley View A venue La Mirada. California 90638 213 921-9660 T W X 910-583-4807 F A X 21'’ -921-2396 FEATURES

A15D

Abstract: 1N5625 A14F DT230 ge a15a 1n5626 jantx 1N5627 JANTX 1n5626 1N5624
Contextual Info: R ECTIFIERS rHE INDUSTRY’S BROADEST LINE OF POWER RECTIFIERS— .250 TO 1500 AMPERES, UP TO 3000 VOLTS • CURRENT/VOLTAGE RATINGS ■ PACKAGING ■ MOUNTING AND COOLING ■ HIGH-SPEED FAST RECOVERY ■ TRANSIENT SELF-PROTECTION ■ GENERAL PURPOSE RECTIFIERS

JANTX1N5627

Abstract: JAN1N5624 JANTX1N5624 Ta650 Functional details of ic 4066 1N5626 IN5624 DD0015 diode 1n5624 1N5625
Contextual Info: MIL SPECS IC | d 00Q1H5 00135ST 1 |~~ MIL-S-19500/432 U3AF 3 Apr_x i-/\MILITARY SPECIFICATION SEMICONDUCTOR DEVICE“, DIODE, SILICON JAN1N5624 THROUGH JAN1N5627 AND JANTX1N5624 THROUGH JANTX1N5627 1. SCOPE 1.1 Scope - This specification covers the detail requirements for

1N5625 PIV

Abstract: 1N5060 BYW55 1N4248 1n5062 1N5061 1N5059 1N5625 byw55 byw56 1N4245
Contextual Info: Sinterglass Rectifiers Part No. 1N4245 1N4246 1N4247 1N4248 1N4249 1N5059 1N5060 1N5061 1N5062 1N5614 1N5616 1N5618 1N5620 1N5622 G1A G1B G1D G1G G1J G1K G1M BYT41A BYT41B BYT41D BYT41G BYT41J BYT41K BYT41M BYT51A BYT51B BYT51D BYT51G BYT51J BYT51K BYT51M

1N5179

Abstract: 1N5624 1N5625 1N5626 1N5627 A15B A15D A15M A15N
Contextual Info: FAST R EC O VER Y RECTIFIERS SELECTOR GUIDE 2000 1500 1000 900 600 « 700 ! j 600 § 500 s 400 5 300 z § H O > 200 _l fOO 90 80 70 60 50 I 3 6 12 20 25 30 100 140 2 5 0 4 0 0 750 IK A V ER A G E C U R R E N T -A M P E R E S S T A N D A R D RECTIFIERS SELECTOR GUIDE

diode 1n5624

Abstract: 1n5624 1N5625 diode
Contextual Info: 1N5624 to 1N5627 VISHAY Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • Glass passivated junction Hermetically sealed package Controlled avalanche characteristics Low reverse current High surge current loading Applications