1N78 DIODE Search Results

1N23 diode

Abstract: 1N78 diode 1N23WGMR 1N26A diode 1n21we 1N26B ka2to 1N415 DMA4148-042 1n23 jan
Contextual Info: Silicon Point Contact Mixer Diodes Features • ■ ■ High Burnout Resistance Low Noise Figure, even in the Starved L.O. Mode Hermetically Sealed * \ / \ Description These specifications allow the noise figure of the re­ ceiver to deteriorate no greater than 0.1 dB due to local

1N23 diode

Abstract: 1N23 1N53AR 1n3747 1N1132 1N53R 1N415C 1n415 1N26 1N23 ALPHA
Contextual Info: ALPHA IN»/ SEMICONDUCTOR MAE D • 0SAS443 00011b3 447 ■ ALP Silicon Point Contact Mixer Diodes Description Alpha’s point contact mixer diodes are designed for applications through Ka-band 40 GHz . These diodes employ epitaxial silicon optimized for low noise figure

IN23C

Abstract: IN23E in23we DO-37 IN416D 1N26 DO-23 1N25 diode 1N26A diode IN23WGMR
Contextual Info: 0258354 ADVANCED ADVANCED S EMI CONDUC TOR SEMICONDUCTOR ! 82D 0 0 0 6 3 fl2 D Dff|oa5ü3S4 o n - o~r 0□0 □Ob3 4 SILICONPOINTCOMCTMIXER OIOÛES ASI Point Contact Mixer Diodes are designed for applications from UHF through 26 GHz. They feature high burnout resistance, low

1N21

Abstract: 1N1132 1N23 1N415 Microwave detector diodes 1n4603 1N416 "Point Contact Mixer" 1N3745 1n26
Contextual Info: Silicon Point Contact Mixer and Detector Diodes Quick Reference Chart Description This selection chart identifies the standard line of Alpha microwave point contact mixer and detector di­ odes by basic construction, package style and frequency band. Type

CS103

Abstract: 1n53d diode 1N78A 1N78D 1N53B ka-band mixer 1N78B "Point Contact Diodes" CS102 Silicon Point Contact Mixer Diodes
Contextual Info: Point Contact Diodes Point Contact Diodes: 1N Series Ka Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications through KA-Band. Each device in this series is in a coaxial package specially designed for low

1N53C

Abstract: 1N78 1N53A 1N53D cs103 1N53 1N53B 1N78A 1N78B CS102
Contextual Info: Point Contact Diodes: 1N Series Ka Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications through KA-Band. Each device in this series is in a coaxial package specially designed for low

in23c

Abstract: IN415C IN23CR in23we 1N23F 1N3747 IN26 1N21C HP-432A 1n416
Contextual Info: SILICONPOINTCONTACTMIXERDIODES They feature high burnout resistance, low ASI Point Contact Mixer Diodes are designed for applications from UHF through noise figure and are hermetically sealed. They are available in DO-7, DO-22, DO-23 26 GHz. and DO-37 package styles which make

1N23C diode

Abstract: DIODE ku 1490 1N25 diode 1N26A diode DO-37 DO-23 1N415C 1N4294 1N4603R 1N26BR
Contextual Info: SILICON POINT CON TACT MIXER DIODES ASI Point Contact M ixer Diodes are designed for applications from UHF through 26 GHz. The overall noise figure is expressed by the follow ing relationship: NF0 = Lc NR0 + NF if -1 NF„ = overall receiver noise figure

1N78

Abstract: AAY52 AAY52R JAN201 K1007
Contextual Info: M IC R O W A V E MIXER DIODES AAY52 AAY52R The AAY52 and AAY52R form a re v e r s e p a ir of m ix e r diodes fo r use in balanced m ix e r c irc u its at J-b an d Ku b a n d . The diodes give a good im ­ pedance m atch o ver the whole band. The AAY52 and AAY52R a re packaged

1N78

Abstract: AAY51 AAY51R JAN201 K1007
Contextual Info: M IC R O W A V E M IX E R DIO DES AAY5I AAY5IR The AAY51 and AAY51R fo rm a r e v e r s e p a ir of m ix e r diodes fo r use in balanced m ix e r c irc u its at J-b an d Kuband . The diodes give a good im ­ pedance m atch o ver the whole band. The AAY51 and AAY51R a r e packaged

Contextual Info: 02583^4 ADVANCED SEMICONDUCTOR 82D 00071 D DE~| 0550354 0000071 3 ADVANCED SEMIC OND UCTOR SILICONPOINTCONTACTDETECTORDIOOES A S I Point Contact Detector Diodes are designed for applications from UHF through 16 GHz. They feature high burnout resis­ tance, broadband operation and high tan­

V06T

Abstract: FZ600R12KP4
Contextual Info: Technische Information / technical information FZ600R12KP4 IGBT-Module IGBT-modules 62mm C-Serien Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode 62mm C-Series module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode * + , (-./ 0 !

1N21B diode

Abstract: 1N21* Diode Detector Holder 1N28 diode 1N21B 1N23CR diode 1N358A 1N358AMR 1N358AR 1N358AM 1N53 ON
Contextual Info: M IL -S-19500/339 17 D^5«sb«r 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, VIDEO DETECTOR TYPES 1N358A, 1N358AE, 1N358AM, AND 1NS58AMR This sp ecification is mandatory for u se by all Departm ents and A gen cies of the Department of D efen se.

1N23C

Abstract: 1N23C diode 1N23 Diode Holder 1N23 diode CI 3060 Silicon Point Contact Mixer Diodes 1n23we 1N21E 1N23CR 1N1132
Contextual Info: 0585443 ALPHA IND/ SEMICONDUCTOR "El D lf| 0SÛS443 Q0DD3fiti E 03E 00386 D T -C>7 _¿> J Silicon Point Contact Mixer Diodes Features • High Burnout Resistance • Low Noise Figure, even in the Starved L.O. Mode • Hermetically Sealed The matching criteria for mixer diodes are as follows:

1N263 JAN

Abstract: 1N23B diode 1N23B 1N21B diode 1N263 1N21B 1N25 1N23CR DIODE 1N-23b GENERAL SEMICONDUCTOR diodes marking code rq
Contextual Info: KIL-S-19500/19U U Jaauary 1Q6A OTPKRaZDIHQ^ MIL-3-19500/¿91 28. March 1961 ISUTJUII SpKCIFIQITTOS SEMTOORDUCrOR DEVICE, DIODE, QEHKAKTOH, MUSH TIPS JAH-1I263 Tble specification hag been approved by the Pepartaent of Defense and in aftndfttorr fqf Uie ta^ne IwpartacptB of

crystal diode

Abstract: 4126 transformer design details 1N53B Transformer Inspection Testing 1N53B DIODE military part marking symbols jan 1N53 1N53BM 1N53BMR 1N53BR
Contextual Info: MIL-S-19500/186B i l FêbrUâry i$te5 SUPERSEDING MIL-S-19500/186A EL 18 October 1963 M i r .r r A P V QDTPr'TTT'Tr’ ÀTTn'M TYPES JAN-1N53B, JAN-1N53BR, JAN-1N53BM, AND JAN-1N53BMR This specification is mandatory for use by all Departments ailu AgenCicS Qi the D€pa.rtifi6nt Of PGi6fl5€.

dr 25 germanium diode

Abstract: 1N21B diode 1N21B 1N23B Germanium diode F0 215 1N1838 1N23C germanium point contact diode 1N23CR INI838
Contextual Info: MTT._.C_1 QROn/uA/ ATA4U U AV VVV/ 10 October 1966 MILITARY SPECIFICATION SEMICONDUCTOR d e v ic e , d io d e , g e r m a n iu m , m ix e r TYPE IN I838 T his specification is m andatory fo r use by all D ep a rt­ m ents and A gencies of the D epartm ent of Defense.

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

BA100 diode

Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,