200JIS Search Results

SMOS182

Contextual Info: TMS626802, TMS636802 1048576-WORD BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS182 - FEBRUARY 1994 TM S626802 LVTTL DGE PACKAGE (TO P VIE W ) 3.3-V Power Supply (10% Tolerance) Two Banks for On-Chip Interleaving (Gapless Accesses) vcc [ 1

C2238

Abstract: TMS626812
Contextual Info: TM S626412A , TM S626812A 2 0 9 7 1 5 2 B Y 4 -B IT B Y 2 -B A N K , 1 0 4 8 5 7 6 B Y 8 -B IT B Y 2 -B A N K S Y N C H R O N O U S D Y N A M IC R A N D O M -A C C E S S M E M O R IE S _ SMOS691A-JULY 1997 - REVISED OCTOBER 1997 SYNCHRONOUS

Contextual Info: tVHITE MICROELECTRONICS 1Mx16 CMOS FPM Dynamic RAM WPD1M16-XTJX PRELIMINARY# PLASTIC PLUS FEATURES • Fast Access Time I rac : 70, 8 0 ,100ns PIN CONFIGURATION TOP VIEW ■ Power Supply: 5V±0.5V ■ Packaging Vcc C 1 DQO C 2 DQ1 C 3 DQ2 C 4 DQ3 C 5 Vcc C 6

Contextual Info: TMS664414, TMS664814, TMS664164 64M-BIT SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS69Q - DECEMBER 1996 High-Speed, L ow -N o ise Low-Voltage x 16 x 4 B a n k s 2M x 8 x 4 B a n k s Transistor-Transistor Logic LVTTL 4M x 4 x 4 B a n k s Interface 3.3-V P o w e r S u p p l y ( ± 1 0 % Toler ance)

Contextual Info: 19-1198; Rev0; 4/97 JV Y A Y A JV X / « to 3 -C ell, H ig h -C u rren t, Lo w -N o ise , S te p -U p D C -D C C o n v e rte rs w ith L in e a r R e g u la to r The MAX1705/MAX1706 are high-efficiency, low-noise, step-up DC-DC converters with an auxiliary linearregulator output. These devices are intended for use in

SO DIMM 100 Pin Connector Pinout

Abstract: SO DIMM DRAM 144 Pin Connector Pinout
Contextual Info: IBM13M8734HCB Preliminary 8M x 72 1 Bank Registered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module 8Mx72 Synchronous DRAM DIMM Performance: i -75A Reg. ; , j | DIMM CAS Latency I 4 : ; 133 100 MHz ! fd< i Clock Frequency i 7.5 ! 10.0 j ns !

tf12n

Contextual Info: IBM13M8734HCD P relim inary 8M x 72 1 B ank R eg istered/B uffered S D R A M M odule Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 8Mx72 Synchronous DRAM DIMM • Performance: ; -10 : -260 • -360 ; -360 : U nits: \ Device Latency

analog devices 460j

Abstract: Model 52K 458J AC1016 analog devices 458L Model 610 458L 460J operational amplifier 458 analog Isolator
Contextual Info: ADVFC32 Page High Linearity ±0.01% max at 10kHz FS ±0.05% max at 100kHz FS ±0.2% max at 0.5MHz FS Vol. I 11-27 Output DTL/TTL/CMOS Compatible V/F or F/V Conversion 6 Decade Dynamic Range Voltage or Current Input Reliable Monolithic Construction MODEL 458/MODEL 460

Contextual Info: KMM366F883AK KMM366F803AK DRAM1VI0DULE KMM366F883AK & KMM366F803AK EDO Mode without buffer 8Mx64 DRAM DIMM based on 8Mx8, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366FB8 0 3AK is a 8M bit x 64 Dynamic RAM high density memory module. The

TC96C555CPA

Contextual Info: SEP E S 1982 7ÎTELEDYNE COMPONENTS PRELIMINARY INFORMATION TC96C555 3A OUTPUT PROGRAMMABLE POWER OSCILLATOR FEATURES GENERAL DESCRIPTION • ■ ■ ■ The TC96C555 Programmable Power Oscillator IC uses Teledyne Components' new Tough CMOS process. The output drive capability is similar to the TC4423/4/5

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7=ib4]i 42 ü ü m 4 7 cl flES DRAM MODULES KMM591020AN 1 M x 9 DRAM SIMM Memory Module with Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM591020AN is a 1M b it x 9 Dynamic RAM high density memory module. The Samsung

Contextual Info: B U R R -B R O W N OPA241 OPA251 1 E Single-Supply, M/croPOWER OPERATIONAL AMPLIFIERS FEATURES DESCRIPTION • • • • The OPA241 and OPA251 are specifically designed for battery powered, portable applications. In addition to very low power consumption 24|JiA , these ampli­

Contextual Info: 4bêfc>S2b OOOlbfi^ AMO H I X Y nixYs If i i 700 900 1300 1500 1700 > > > < < < Thyristor Modules Thyristor/Diode Modules 600 800 1200 1400 1600 MCC250 iTAV= 2 x 287 a MCD250 VRRM= 600-1600 V T ype Version 1 Version 1 M CC250*06io1 M CC250-08ÌO1 MCC2S0-121O1

TL 555c

Abstract: 4th order butterworth 50hz ax292 MAX291 MAX291CPA max2960
Contextual Info: ykiyjxivki 19-4526; Rev 3; 12/96 8th-Order, Low pass, S w itched-C apacitor F ilters The MAX291/MAX292/MAX295/MAX296 are easy-to-use, 8th-order, lowpass, switched-capacitor filters that can be set up with corner frequencies from 0.1 Hz to 25kHz MAX291/MAX292 or 0.1Hz to 50kHz (MAX295/MAX296).

Contextual Info: V Z À I/VHITE /MICROELECTRONICS WPD8M72-XMDC 8Mx72 DRAM D IM M FEATURES GENERAL DESCRIPTION • The WPD8M72-XMDC is a 8M x 72 bit Dynamic RAM high density memory module. The module consists of thirty-six 4M x 4 bit DRAMs in 24-pin TSOP packages. The DRAMs are

Contextual Info: February 1990 Edition 1.0 FUJITSU DATA SHEET MB81C1001-70U-80U-10U-12L CMOS 1,048,576 BIT NIBBLE MODE DYNAMIC RAM CMOS 1M x 1 Bit Nibble Mode DRAM T h e Fujitsu M B 81C 1001 Is a C M O S , fully decoded dynam ic R A M organized as 1 ,0 4 8 ,5 7 6 w ords x 1 bit. T h e M B 81C 1001 has been designed for m ainfram e

Contextual Info: FAST PAGE MODE DRAM MODULE CMOS 4M x 72 Bit Fast Page Mode DRAM Module • DESCRIPTION The Fujitsu MB85317A is a fully decoded, CMOS Dynamic Random Access Memory DRAM module consisting of eighteen MB8116400A devices. The MB85317A is optimized for those applications requiring high speed, high

Contextual Info: HYPER PAGE MODE DRAM MODULE CMOS 1,048,576 x 32 Bit Hyper Page Mode DRAM Module • DESCRIPTION The Fujitsu MB85343C is a fully decoded, CMOS dynam ic random access memory DRAM module consisting of eight MB814405C devices. The MB85343C is optimized for those applications requiring high speed, high

Contextual Info: MEMORY CMOS1M x 16 BIT FAST RAGE MODE DYNAMIC RAM CMOS 1,048,576 x 16 BIT Fast Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB8118160A is a fully decoded CMOS Dynamic RAM DRAM th a t contains 16,777,216 memory cells accessible in 16-bit increments. The M B8118160A features a.% st pa$e” .mode of operation whereby high­

Contextual Info: KM44C4003A, KM44C4103A CMOS DRAM 4 M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode Quad C 5 5 DRAMs. Fast Page Mode offers high speed random access of memory cells within the. same row. Refresh cycle 2K Ref. or 4K Ref. , access

41C1000

Abstract: KM41C1000CJ-7 KM41C1000C-6 1mx1 DRAM DIP 41C100 KM41C1000C-8 KM41C1000CJ7
Contextual Info: KM41C1000C CMOS DRAM 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000C is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications

PROFET BTS 410E

Abstract: BTS412B ScansUX7 410D 410E 410F 410H bts 412b
Contextual Info: SIEMENS BTS 412B PROFET • High-side switch • Short-circuit protection • Overtemperature protection • Overload protection • Load dump protection1 • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Reverse battery protection v

LM329C

Contextual Info: r r i \ TECHNOLOGY [ \m _ LM129/LM329 6.9V Precision Voltage Reference F€RT JR€S IXSCRIPTIOfl • ■ ■ ■ The LM129 temperature compensated 6.9 Volt zener references provide excellent stability over time and temperature, very low dynamic impedance and a wide

Contextual Info: »HYUNDAI HYM536A414B M-Series 4M X 36-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM536A414B is a 4 M x 36-bit EDO mode CMOS DRAM module consisting of nineHV5117404B in 24/26 pin SOJ on a 72 pm glass-epoxy printed circuit board. O.inF and O.OlnF decoupling capacitor is mounted for each