200V 3A ULTRA FAST RECOVERY DIODE Search Results

Contextual Info: S3 A315 Series 3A, 50V - 200V Ultrafast Diodes December 1993 Package Features AL-4 • Glass Passivated Junction TOP VIEW • Ultra-Fast Recovery Times • Low Forward Voltage Drop, High-Current Capability • Low Leakage Current ANODE • High Surge Current Capability

A315A

Abstract: A315B A315 A315F A315G
Contextual Info: HARRIS SEMICON» SECTOR bflE D 33 HB H3Ü2271 A315 Series 3A, 50V - 200V Ultrafast Diodes December 1993 Features • 0050333 0=10 H H A S Package AL-4 Glass Passivated Junction TOP VIEW • Ultra-Fast Recovery Times • Low Forward Voltage Drop, High-Current Capability

TO-220FN

Abstract: RF diodes TO220FN 10na RF2001T2D RF1001T2D common anode fast
Contextual Info: RF 1series Diodes Fast recovery Diodes Silicon Epitaxial Planar RF 1 series zExternal dimensions (Unit : mm) zApplications High frequency rectification CPD 5.5 1.5 2.3 0.5 5.6 5.5 zFeatures 1) Ultra low VF very fast recovery 2) Fast recovery 3) Low switching loss

TO-220FN

Abstract: LOW LOSS FAST RECOVERY DUAL DIODES RF603B2D TO220FN 220FN RF073M2S RF1003T2D RF103L2S RF303B2S RF503B2S
Contextual Info: RF 3series Diodes Fast recovery Rectifier Diodes Silicon Epitaxial Planar RF 3 series zExternal dimensions (Unit : mm) zApplications High frequency rectification CPD 5.5 1.5 2.3 0.5 5.6 5.5 zFeatures 1) Very fast recovery 2) Low VF 3) Low switching loss

RF071M2S

Abstract: RF1001T2D RF101L2S RF1601T2D RF2001T2D RF301B2S RF501B2S RF601B2D RF601T2D TO-220FN
Contextual Info: RF 1series Diodes Fast recovery Diodes Silicon Epitaxial Planar RF 1 series zExternal dimensions (Unit : mm) zApplications High frequency rectification CPD 5.5 1.5 2.3 0.5 5.6 5.5 zFeatures 1) Ultra low VF very fast recovery 2) Fast recovery 3) Low switching loss

D-PACK

Abstract: RF073M2S RF1003T2D RF103L2S RF303B2S RF503B2S RF603B2D RF603T2D TO-220FN Reverse voltage repetitive peak VRM 60 V application notes frd
Contextual Info: RF 3series Diodes Fast recovery Rectifier Diodes Silicon Epitaxial Planar RF 3 series zExternal dimensions (Unit : mm) zApplications High frequency rectification CPD 5.5 1.5 2.3 0.5 5.6 5.5 zFeatures 1) Very fast recovery 2) Low VF 3) Low switching loss

Transistor RKU

Abstract: 200v 3A ultra fast recovery diode K4M diode ULTRA fast rectifier diode 30A 200V cathode common
Contextual Info: PD-2.336 Provisional Data Sheet International IORIRectifier HEXFRED HFA30PA60C ULTRA FAST, SOFT RECOVERY DIODE Major Ratings and Characteristics per Leg Characteristics Units VR Vr r m 600 V lF(AV) 15 A trr (typ) 19 ns Qrr (typ) 80 nC Ir r m 6 A di(rec)M/dt (typ)

HFA25PB60

Abstract: IRFP250
Contextual Info: PD -2.338 HFA25PB60 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching

200v 3A ultra fast recovery diode

Abstract: VR150A
Contextual Info: RF601T2D Data Sheet Fast recovery diode RF601T2D Applications General rectification Dimensions Unit : mm  Structure 4.5±0.3 0.1 Features 1) Cathode common type.(TO-220) 2) Ultra Low V F 2.8±0.2 0.1 8.0±0.2 12.0±0.2

200v 3A ultra fast recovery diode

Abstract: RF601T
Contextual Info: Data Sheet Fast recovery diode RF601T2D Applications General rectification Dimensions Unit : mm  Structure 4.5±0.3 0.1 Features 1) Cathode common type.(TO-220) 2) Ultra Low V F 2.8±0.2 0.1 8.0±0.2 12.0±0.2

NTE588

Contextual Info: NTE588 Silicon Diode 200V, 3A, Ultra Fast Switch Features: D High Reliability D Low Leakage D Low Forward Voltage D High Current Capbility D D D D Super Fast Switching Speed < 35nS High Surge Capability High Surge Capability Good for 200kHz Power Supplier

HFA30PA60C

Abstract: IRFP250 irf 44 ns
Contextual Info: PD -2.336 rev. A 04/98 HFA30PA60C HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits • Reduced RFI and EMI

Contextual Info: Data Sheet Fast Recovery Diode RF301B2S Applications General rectification Dimentions Unit : mm Land size figure(Unit : mm) 6.0 6.0 1.6 1.6 Features 1)Power mold type(CPD) 2)Ultra Low VF 3)Very fast recovery 4)Low switching loss

Contextual Info: FAST RECOVERY DIODE C6P10F C6P20F F6P10F F6P20F 6.6A/100&#39;-~200V/trr : 30nsec FEATURES ° Similar to T0-220AB Case °Fully Mold Isolation F-Type ° Dual Diodes - Cathode Common ° Ultra - Fast Recovery ° Low Forward Voltage Drop ° High Surge Capability

fast recovery diode

Contextual Info: Data Sheet Fast Recovery Diode RF301B2S Applications General rectification Dimentions Unit : mm Land size figure(Unit : mm) 6.0 6.0 1.6 1.6 Features 1)Power mold type(CPD) 2)Ultra Low VF 3)Very fast recovery 4)Low switching loss

500W TRANSISTOR AUDIO AMPLIFIER

Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet
Contextual Info: Power for Computing Analog Discrete Interface & Logic Power Solutions for • Conversion · Distribution · Management · Minimization There’s a lot more to power than power management. Optimizing system power in computing applications requires innovative products for power conversion, distribution,

0C28

Abstract: 200v 3A ultra fast recovery diode 6VF20CTF 40 hmr 150 DIODE 6VF10CT 6VF10CTF 6VF20CT
Contextual Info: FAST RECOVERY DIODE 6VF10CT 6VF20CT 6VF10CTF 6VF20CTF 6.6A/100~200V/trr : 30nsec FEATURES 2.38MAX .094 2.38MAX (.094) ° TO-251AA&#39;Case • TO-252AA Case, Surface Mount Device 0.9Í.035) NOMENAL 1_ ° Ultra - Fast Recovery ° Dual Diodes - Cathode Common

GE234

Contextual Info: MES1304 MES1305 MES1306 Microsemi Corp. ' The diode experts SANTA A N A . CA SCOTTSDALE, A Z F o r m ore in fo rm a tio n call: 7I4 9 7 9 -8 2 2 0 Ultra Fast Switching Rectifier FEATURES • M IC R O M IN IA TU R E PACK AGE f*— .040 NOM. DIA. \ i • VDIDLESS HERM ETICALLY SEALED G U S S PACKAGE

1451AQ

Contextual Info: / Microsemi Corp. M E S 1304 M E S 1305 M E S 1306 ’ The diode experts S A N T A A N A , CA F o r m o re in fo rm a tio n call: 714 9 7 9 -8 2 2 0 U ltra Fast S w itching R ectifier FEA TU RES • MICROMINIATURE PACKAGE • .040 NOM. DIA. • VOIDLESS HERMETICALLY SEALED GLASS PACKAGE

RF601T2D

Contextual Info: RF601T2D Diodes Fast recovery diode RF601T2D zApplications General rectification zExternal dimensions Unit : mm zStructure 4.5±0.3 0.1 zFeatures 1) Cathode common type. (TO-220) 2) Ultra Low VF 3) Very fast recovery 4) Low switching loss 2.8±0.2

RF601T2D

Contextual Info: RF601T2D Diodes Fast recovery diode RF601T2D zApplications General rectification zExternal dimensions Unit : mm zStructure 9.9 2.2 0.3 0.8 10.0 zFeatures 1) Cathode common type. (TO-220) 2) Ultra Low VF 3) Very fast recovery 4) Low switching loss 4.5±0.3

Contextual Info: bSE D INTERNATIONAL RECTIFIER • MflSSMSS 0017713 322 * I N R P D -2 .3 3 5 International S Rectifier HEXFRED Provisional Data Sheet HFA30TA60C ULTRA FAST, SOFT RECOVERY DIODE Major Ratings and Characteristics per diode C h a ra c te ris tic s 600 V

Contextual Info: RF601B2D Diodes Fast recovery diodes RF601B2D zExternal dimensions Unit : mm 6.5±0.2 5.1±0.2 0.1 zLand size figure (Unit : mm) 6.0 2.3±0.2 0.1 0.5±0.1 9.5±0.5 5.5±0.3 0.1 zFeatures 1) Power mold type. (CPD) 2) Ultra Low VF

RF601T2D

Contextual Info: RF601T2D Diodes Fast recovery diode RF601T2D zApplications General rectification zDimensions Unit : mm zStructure 4.5±0.3 0.1 zFeatures 1) Cathode common type. (TO-220) 2) Ultra Low VF 3) Very fast recovery 4) Low switching loss 2.8±0.2 0.1