2048X4 Search Results

27s185

Contextual Info: A m 2 7 S 1 8 5 /2 7 S 1 8 5 A Advanced Micro Devices 8,192-Bit 2048x4 Bipolar PROM DISTINCTIVE CHARACTERISTICS Ultra-fast access time " A " version (35 ns Max.) — Fast access time Standard version (50 ns Max.) — allow tremendous system speed improvements

S485A

Abstract: 2048X4 53S841 tS1820 53S841A 63S841 63S841A A933 63S485
Contextual Info: 5 3 /6 3 S 8 4 1 5 3 /6 3 S 8 4 1 A High Performance 2 0 4 8 x 4 PROM TiW PROM Family Features/ Benefits Description • 35-ns maximum access time T h e 53/63S841 a n d 5 3/6 3S 8 4 1 A a re 2048x4 b ip o la r P R O M s fe a tu rin g lo w in p u t c u rre n t P N P in p u ts , fu ll S c h o ttk y cla m p in g ,

6331-1 prom

Contextual Info: Generic NiCR PROM Fam ily 53/63XXX-1 53/63XXX-2 F eatures/ Benefit Description • From 256 Bit to 8192 Bit memory The 53/63XX series generic PROM fam ily offers a w ide selection of size and organizations. The 4-bit w ide PROMs range from 256x4 to 2048x4 and feature up w ard/dow nw ard pin out com ­

82HS185

Abstract: N82HS185 N82HS185A S82HS185
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION 8192-BIT BIPOLAR PROM 2048x4 _ 82HS485/82HS185A (T.S.) DESCRIPTION FEATURES The 82HS185 is fie ld program m able, vihich means th a t cu sto m patte rn s are im m ed iate ­ ly available by fo llo w in g th e fu sin g p roce ­

Contextual Info: 2048x4 Diagnostic Registered PROM 53DA841 63DA841 w ith Asynchronous Enable and Output Initialization Features/Benefits Description • Asynchronous output enable • Programmable asynchronous output Initialization • Provides system diagnostic testing with system

5t83

Abstract: KS000010
Contextual Info: a Am 27 S 185/27 S 185 A 8,192-Bit 2048x4 Bipolar PROM Devices DISTINCTIVE CHARACTERISTICS • • Ultra-fast access time "A " version (35 ns Max.) — Fast access time Standard version (50 ns Max.) — allow tremendous system speed improvements Platinum-Silicide fuses guarantee high reliability, fast

6331-1

Abstract: 6301-1 prom 6349-1 Monolithic Memories 6301 PROM programming 6309-1 6341 prom 6301-1 monolithic memories prom 5349 6306-1 prom 6309
Contextual Info: Generic NiCR PROM Family 53/63X X -1 Description Features/ Benefits The 53/63XX-1-series generic PROM fam ily offers the widest selection of sizes and organizations available in the industry. The 4-bit wide PROMs range from 256x4 to 2048x4 and feature upward/downward pin out com patibility in the space saving 16

2580N

Contextual Info: s i g r i Q 8 1 9 2 - B IT t i c s S T A T IC O K Q f l READ O NLY M EM O RY * u o u SILICON GATE MOS 2500 SERIES DESCRIPTION PIN CONFIGURATION Top View- The 2680 it an 8,192-Bit Read-Only Memory available in a 2048x4 organization. This device has TTL compatible inputs

27S185

Abstract: AM27S185 CERAMIC LEADLESS CHIP CARRIER LCC 24 AM27S185A B0006321
Contextual Info: A m 2 7 S 1 8 5 /2 7 S 1 8 5 A Advanced Micro Devices 8,192-Bit 2048x4 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • Ultra-fast access time " A " version (35 ns Max.) — Fast access time Standard version (50 ns Max.) — allow trem endous system speed improvements

Contextual Info: High Performance 2 0 4 8 x 4 PROM TiW PROM Family 5 3 /6 3 S 8 4 1 5 3 /6 3 S 8 4 1 A ¿3 s ^ Features/Benefits Description • 35-ns maximum access time The 53/63S841 and 53/63S841A are 2048x4 bipolar PROMs featuring low input current PNP inputs, full Schottky clamping,

63ls1640

Contextual Info: High Performance Low Power Schottky Generic PROM Family s3/ 63ls x x x Features/ Benefits Description • Largest generic low power Schottky PROM family available The 53/63LSXXX series generic PROM fam ily offers the lowest power and fastest speeds available in the industry. The 4-bitwide PROMs range from 256x4 to 2048x4 and feature upward/

63S841

Contextual Info: High Performance 2 0 4 8 x 4 PROM TiW PROM Family 5 3 /6 3 S 8 4 1 5 3 /6 3 S 8 4 1 A Featu res/ Benefits Description • 35-ns maximum access time The S3/63S841 and 53/63S841A are 2048x4 bipolar PROMs featuring low input current PNP inputs, full Schottky clamping,

53DA841

Abstract: 63DA841
Contextual Info: 2 0 4 8 x 4 Diagnostic Registered PROM 53D A 841 63D A 841 w ith Asynchronous Enable and Output Initialization Features/Benefits Description • Asynchronous output enable • Programmable asynchronous output Initialization • Provides system diagnostic testing with system

mcm6830

Abstract: EXORCISER motorola M68MM01A 7642T MC68B54 transistor bf 175 motorola application note 6809 6844 MMS1117 EXORCISER motorola M68MM01A2
Contextual Info: The MS800MM0S Support Elem ents Other NMOS MPUs MC3870 ^ MICROCOMPUTER COMPONENTS CMOS MCUS/ICUS MC14S00B, MC141000/1206 Bipolar 4-Blt slice MPU Fam ilies M2900 TTL , M10800 (MECL) nm os Memories RAM, EPROM, ROM CMOS Memories RAM, ROM MEMORY PRODUCTS Bipoiar Memories

Contextual Info: VG26 V (S)17405 4,194,304 x 4 - Bit CMOS Dynamic RAM VIS Description The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single

27S43

Contextual Info: Product Specifications PROMs 29000 Series PROMs Raytheon 29000 Series Field Programmable Read-Only Memories Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Low po w e r S ch o ttky te ch n o lo g y H ighly reliable n ichro m e fuses Three-state ou tputs

HN462532G

Abstract: HN462732G HN4827128G-25 6116ALSP-15 482732AG 6116LP 613128P HM4816AP4 6116ALP-10 HM4816AP-4
Contextual Info: \ HITACHI IC MEMORY DATA BOOK 0 HITACHI 1 IN D EX • • • • • • Q U IC K R E F E R E N C E G U ID E TO H IT A C H I IC M EM O R IES . 8 MOS R A M .

7611 prom

Abstract: mi 7641 7641 prom 1024X4 7621 prom 4096X4 lansdale PROM 32x8
Contextual Info: Bipolar PROM 7 MAXIMUM RATINGS Rating HARRIS INTEGRATED CIRCUITS BIPOLAR PROM 7600 Series Value Unit Output or Supply Voltage - Vcc -.3 to 7 V Address/Enable Input Voltage 5.5 V Address/Enable Input Current -20 mA -65 to +175 °C Storage Temperature - Tstg

IBM0164405B16M

Abstract: IBM0164405BJ5B-50 IBM0164405BJ5B-60 IBM0164405P16M
Contextual Info: IBM0164405B16M x 413/11, 3.3V, EDO. IBM0164405P16M x 413/11, 3.3V, LP, SR, EDO. IBM0164405B IBM0164405P 16M x 4 13/11 EDO DRAM Features • 16,777,216 word by 4 bit organization • Read-Modify-Write • Single 3.3 ± 0.3V power supply • Performance: • Extended Data Out Hyper Page Mode

Contextual Info: PRELIMINARY CMOS SRAM KM64V4002B/BL, KM64V4002BI/BLI Document Title 1Mx4 Bit with OE High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark

MAS 10 RCD

Contextual Info: VIS VG26 V (S)17405 4,194,304 x 4 - Bit CMOS Dynamic RAM Description The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single

Contextual Info: VIS VG26 V (S)17405 4,194,304 x 4 - Bit CMOS Dynamic RAM Description The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single

17405CJ

Contextual Info: VG26 V (S)17405C 4,194,304 x 4 - Bit CMOS Dynamic RAM VIS Description The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single

EMA18

Contextual Info: % P ro tfn ? V rr-T y KM644002B, KM644002BI C M O SSR A M 1M x 4 Bit with OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Fast Access Time 10,12,15* • (Max.) - Low Power Dissipation Standby (TTL) : 40« • (Max.) The KM644002B is a 4,194,304-bit high-speed Static Random