2147H Search Results

Intel 2147H

Abstract: intel 2147 2147 intel 2147H 2147H-1 2147H-2 2147H-3 2147HL 2147HL-3
Contextual Info: in te i 2147H HIGH SPEED 4096 x 1 BIT STATIC RAM 2147H-2 2147H-3 2147HL-3 2147H 35 45 55 55 70 70 Max. Active Current mA 180 180 180 125 160 140 Max. Standby Current (mA) 30 30 30 15 20 10 2147H-1 Max. Access Time (ns) Pinout, Function, and Power Com­ patible to Industry Standard 2147

intel 2147

Contextual Info: intei* 2147H HIGH SPEED 4096 x 1 BIT STATIC RAM 2147H-1 2147H-2 2147H-3 35 45 55 70 180 180 180 160 30 30 30 20 Max. Access Time ns Max. Active Current (mA) Max. Standby Current (mA) 2147H Direct Performance Upgrade for 2147 Pinout, Function, and Power Compatible to Industry Standard 2147

Contextual Info: MOS LSI TM S 2147H JL, NL, FPL FAST 4096-W 0RD BY 1-BIT STATIC RAM F E B R U A R Y 1981 - 4096 X 1 Organization TM S 2147H 1 8 -P IN P L A S T IC A N D C E R A M IC Single +5 V Supply ±10% Tolerance D U A L -IN -L IN E P A C K A G E S (T O P V IE W ) High-Density 300-mil (7.62 mm) Packages

DALLAS 2501

Abstract: 74LS 10N 2147H TMS 2501 4096 bit static RAM NS012 18-PIN 2147H-3 2147H-4 74LS
Contextual Info: MOS TM S 2147H JL, NL, FPL LSI FAST 4096-W 0RD BY 1-BIT STATIC RAM FEBRU A RY • 4096 X 1 Organization 1981 - R E V I S E D TM 2147H 18-PIN P L A S T IC A N D C E R A M I C D U A L - IN - L IN E P A C K A G E S T O P V I E W • Single +5 V Supply (± 10% Tolerance)

2147 intel

Contextual Info: in te i 2147H HIGH SPEED 4096 x 1 BIT STATIC RAM 2147H-1 Max. Access Time ns Max. Active Current (mA) Max. Standby Current (mA) 2147H-2 2147H-3 2147H 2147HL 35 45 55 70 70 180 180 180 160 140 30 30 30 20 10 Pinout, Function, and Power Com­ patible to Industry Standard 2147

Contextual Info: p w io M M o n r in t e r M27C512 512K 64K x 8 UV ERASABLE PROM Military • Fast Access Time — M27C512-15 150 ns — M27C512-20 200 ns — M27C512-25 250 ns ■ Two-Line Control ■ CMOS and TTL Compatible ■ Low Power — 30 mA max. Active — 1.0 mA max. Standby

Contextual Info: p ft g o M O G O M v in t e i M27512 512K 64K x 8 UV ERASABLE PROM Military Industry Standard Pinout. JEDEC Approved Software Carrier Capability Fast Access Time — M27512-20 200 ns — M27512-25 250 ns — M27512-35 350 ns Low Power — 150 mA max. Active

P80A49H

Abstract: 8035HL F1L 250 V fuse BPK-70 interfacing 8275 crt controller with 8086 i8282 hall marking code A04 Transistor AF 138 DK55 82720 intel
Contextual Info: COMPONENT DATA CATALOG JANUARY 1982 Intel C orporation makes no w arranty fo r the use of its products and assumes no re sponsib ility fo r any e rrors w hich may appear in th is docum ent nor does it make a com m itm ent to update the info rm atio n contained herein.

intel 27C011

Abstract: 27C128 INTEL 27C513 27C128 st make 27C011 27C128 27C256 27C64 27CS12 87C64
Contextual Info: in te i 27C513 PAGE-ADDRESSED 512K 4 x 16K x 8 UV ERASABLE PROM • Paged Organization — Reduced Physical Address Requirement — No Bank Switching Logic Needed ■ Software Carrier Capacity ■ Automatic Page Clear — Resets to Page 0 on Power Up and

27512

Abstract: 2732a jl eprom intel 27512 eprom 27512 eprom 27512-170V05 27512-200V10 intel 2716 eprom 27C84 iAPX 286 Intel 2147H
Contextual Info: intei 27512 512K 64K x 8 PRODUCTION AND UV ERASABLE PROM Software Carrier Capability Low Power — 125 mA max. Active — 40 mA max. Standby 170 ns Maximum Access Time Two-Line Control inteligent Identifier Mode — Automated Programming Operations indigent Programming™ Algorithm

m27128 eprom

Abstract: M27128 M27128A M27128A-20 M27128A-30 M2716 M27256 M2732A M2764A M27128AS
Contextual Info: infer M27128A Advanced 128K 1 6 x 8 UV Erasable PROM Military • lnteligent P r o g r a m m i n g Algorithm — Fastest EPROM Programming ■ lnteiigent Identifier™ Mode — Automated Programming Operations ■ Compatible with M2764A and M27256

Lpel

Abstract: Intel 2147H 2147H HM6147HLP-35 HM6147HLP-45 HM6147HLP-55 HM6147HP-35 HM6147HP-45 HM6147HP-55 hc5v1
Contextual Info: H M 6147H S e r ie s Maintenance Only 4096-word x 1-bit High Speed CMOS Static RAM FEATURES » High Speed: Fast Access Time 35ns/45ns/55ns (max. » Low Power Standby and Low Power Operation, Standby: 100juW (typ.)/5 p W (typ.) (L-version), O peration: 150mW typ.

INTEL H55

Abstract: 551h MBM2147H MBM2147 H-3570 NMOS 2147H intel 2147 intel h55 circuit diagram
Contextual Info: 2147H-70 2147H-55 2147H-45 MBM2I47H-35 FUJITSU M IC R O E L E C T R O N IC S MOS 4096-BIT STATIC RANDOM ACCESS MEMORY DESCRIPTION single +5V DC supply. For ease of use, chip select C3 perm its the selection of an individual package when outputs are ORtied, and autom atically powers

HN462532G

Abstract: HN462732G HN4827128G-25 6116ALSP-15 482732AG 6116LP 613128P HM4816AP4 6116ALP-10 HM4816AP-4
Contextual Info: \ HITACHI IC MEMORY DATA BOOK 0 HITACHI 1 IN D EX • • • • • • Q U IC K R E F E R E N C E G U ID E TO H IT A C H I IC M EM O R IES . 8 MOS R A M .

SN74ALS123

Abstract: SN7401 74LS424 54175 SN74298 SN74265 SN74LS630 SN74LS69 National Semiconductor Linear Data Book Transistor AF 138
Contextual Info: INDEX • FUNCTIONAL SELECTION GUIDE • NUMERICAL FUNCTION INTERCHANGEABILITY GUIDE GENERAL INFORMATION AND EXPLANATION OF NEW LOGIC SYMBOLS ORDERING INSTRUCTIONS AND MECHANICAL DATA 54/74 SERIES OF COMPATIBLE TTL CIRCUITS • PIN OUT DIAGRAMS 54/74 FAMILY SSI CIRCUITS

MSM 6290

Abstract: msm 5562 27c256 intel 62c512 AP 2068 27C512 microchip 62256 57C256 27C512 SGS-THOMSON 27C512-150
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+

GR 733

Abstract: SONY 1412 CM500S CXD3400N ICX411AQ V41A image sensor pal tf 164 ICX411
Contextual Info: ICX411AQ Diagonal 8.98mm Type 1/1.8 Frame Readout CCD Image Sensor with a Square Pixel for Color Cameras Description The ICX411AQ is a diagonal 8.98mm (Type 1/1.8) interline CCD solid-state image sensor with a square pixel array and 3.98M effective pixels. Frame readout

290153

Contextual Info: ir r t e T 64K 8K X 57F64 8 CHMOS FLASH EPROM • Flash-Erase — Two Second Typical Array Electrical Erasure On-Board Program/Erase — New Modes Simplify In-Module Firmware Upgrades ■ High Performance Speeds — 150 ns Maximum Access Time 2764A and 27C64 JEDEC Pinout

1k x 4

Abstract: 2148H LD2114AL-4 ld2114 QP2114 2125AL-2 LD2114AL enhance 168 2125AL qD2125AL
Contextual Info: RAM FAMILY EXPRESS • Standard Temperature Range ■ 168 ±8 Hour Burn-In Available ■ Extended Temperature Range - 4 0 t,C - + 85°C Available ■ Inspected to 0.1% AQL The Intel EXPRESS RAM family is a series of random-access memories which have received additional

k5m capacitor

Abstract: 27C128 INTEL eprom 27c64 PROGRAMMER CIRCUIT ic 27c64 intel 27C011 27CS12 2732A TVR 07 spec 27C011 27C128
Contextual Info: in te i 27C513 PAGE-ADDRESSED 512K 4 x 16K x 8 UV ERASABLE PROM • Paged Organization — Reduced Physical Address Requirement — No Bank Switching Logic Needed ■ 170 ns Access Time ■ Two Line Control ■ Low Power — 30 mA max. Active — 100 f i A max. Standby

27C513

Abstract: intel 27C011 eprom 27c64 PROGRAMMER CIRCUIT INTEL 27128A EPROM EPROM 27011
Contextual Info: 27C513 PAGE-ADDRESSED 512K 4 x 16K x 8 UV ERASABLE PROM • Paged Organization — Reduced Physical Address Requirement — No Bank Switching Logic Needed ■ 170 ns Access Time ■ Two Line Control ■ Low Power — 30 mA max. Active — 100 fxA max. Standby

Intel AP-401

Abstract: AP-316 29204* intel lm2391
Contextual Info: m u APPLICATION NOTE AP-316 October 1990 Using Flash Memory for In-System Reprogrammable Nonvolatile Storage SAUL ZALES DALE ELBERT APPLICATIONS ENGINEERING INTEL CORPORATION Order Number: 292046-003 6-203 6 USING FLASH MEMORY FOR IN-SYSTEM REPROGRAMMABLE

7258 "drop-in replacement"

Abstract: EPROM 27011 27011 27128 27011-200V10 27C128 INTEL 27C128 27C513 27C64 87C64
Contextual Info: in te i 27011 PAGE-ADDRESSED 1M 8 x 16K x 8 UV ERASABLE PROM • Automatic Page Clear — Resets to Page 0 on Power-Up and On Demand with RST Signal^) ■ Paged Organization — Reduced Physical Address Requirement ■ Compatible with 28-Pin JEDEC EPROMs

intel 27f64

Abstract: 27F64 150V0
Contextual Info: PKEILOIMIDMAIHV in té T 27F64 64K 8K x 8 CHMOS FLASH MEMORY On-Board Program/Erase — New Modes Simplify In-Module Firmware Upgrades 2764A and 27C64 JEDEC Pinout — 28 Pin Cerdip Package Q uick-EraseTM A lg o rith m — Two Second Typical Array Electrical