23C1600 Search Results

hd12d

Abstract: 23C1600
Contextual Info: 23C16000A GoldStar 2M x8/lM x 16 BIT CMOS MASK ROM GOLDSTAR ELECTRON CO., LTD. Pin Configuration Description The GM 23C16000A high performance read only memory is organized either as 2 ,0 9 7 ,1 5 2 x 8 bit Byte Mode| or as 1,048,576 x 16 bit (Word Mode

MB8316200

Abstract: uPD23C4000S TC533200 23C4000C UPD23C4000 23C32000a 624116 HN62318/338B
Contextual Info: MEMORY ICS FUNCTION GUIDE 3. CROSS REFERENCE GUIDE Density 4M bit 8M bit Samsung NEC Hitachi Sharp Toshiba Fujitsu K M 23C4000C UPD23C4001EB HN62344B LH534700 TC534000C M B834000A K M 23C4100C UPD23C4000S HN62444 LH534600B TC534200C M B834200A K M 23C 4; OOCET UPD23C4000S

23C16005

Contextual Info: 23C16005A G CMOS MASK ROM 16M-Bit (2M x8/1M x16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8 (byte mode) 1,048,576 x 16 (word mode) • Fast access time Random access: 120ns (max.) Page access: 50 ns (max.) • Supply voltage: single + 5V

23c2100

Abstract: KM28C64-20 KM28C16-15 KM28C256J15 KM28C64-25 KM28C65-20 KM28C256-15 KM28C64A25 KM28C64J-20 KM28C64A-15
Contextual Info: MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM :§ SAMSUNG Electronics FUNCTION GUIDE FUNCTION GUIDE MEMORY ICs 4M bit 4M X 1 KM41C4000-8 - KM41C4000-10 KM41C4000L-8 - KM41C4000L-10 KM41C4001-8 KM41C4002-8 1M X 4 KM41C4001-10 — KM41C4002-10 KM41C4000A-7

4170A

Abstract: mask ROM Dynamic RAM 4M x 8 71C4400B GM23C410 64K x 8 BIT DYNAMIC RAM Dynamic RAM 64K x 1 static+ram+32kx8 STATIC+RAM+6264
Contextual Info: PRODUCT INDEX DRAM GM71C1000B/BL GM71C4256B/BL GM71C4100B/BL GM71C4100C/CL GM 71C41OOD/DL GM 71C4400B/BL GM 71C4400C/CL GM 71C4400D/DL GM71C S 4800A/AL GM71C(S)4260A/AL GM71C(S)4270A/AL GM 71C(S)4170A/AL GM71C16100A GM71C16400A GM71C17400A GM 71C(S) 16160 A/AL

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT BYTE MODE /1M-WORD BY 16-BIT (WORD MODE) Description The ¿¡23C16000W is a 16,777,216 bits m ask-program m able ROM. The w ord organization is selectable (BYTE mode: 2,097,152 w ords by 8 bits, W ORD mode: 1,048,576 w ords by 16 bits).

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT BYTE MODE /1 M-WORD BY 16-BIT (WORD MODE) Description The ¿¡23C16000W is a 16,777,216 bits m ask-program m able ROM. The w ord organization is selectable (BYTE mode: 2,097,152 w ords by 8 bits, W ORD mode: 1,048,576 w ords by 16 bits).

Contextual Info: 23C16001 LG Semicon Co.,Ltd. Description 2,097,152 W ORDS x 8 BIT CMOS M ASK ROM Pin Configuration The G M 23C 16001 high performance read only memory is organized as 2,097,152 words by 8 bits and has an access time o f 120ns. It needs no external control clock to assure simple operation.

23C16000F

Contextual Info: PRELIMINARY 23C16000FP CMOS MASK ROM 16M-BH 2M X 8/1 M X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itchable organization 2,097,152 x 8 (byte mode) 1,048,576 x 16 (word mode) • Fast access time: 150ns (max.) • Supply Vbltage: single + 5V

23C8001A

Abstract: 23C8001 KM23C2001 2001h 23c4001
Contextual Info: TABLE OF CONTENTS I. FUNCTION GUIDE 1. 2. 3 4 II. EEPROM DATA SHEETS 1 2 3 4. 5 6. 7. 8. 9. 10 11. 12 13. 14. III. In tro d u ctio n. v -. 11 Product G uide. \ . 28

KM23C16005A

Contextual Info: SAMSUNG ELECTRONICS INC b7E J> m GDlTD'ifl 0 2 5 CMOS MASK ROM 23C16005A G 16M-Bit (2M x 8/1 M x 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8 (byte mode) 1,048,576 x 16 (word mode) • Fast access time Random access: 120ns (max.)

Contextual Info: 23C16000C E T CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16{word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +SV • Current consumption

23C1600

Abstract: 23C16000
Contextual Info: 23C16000 CMOS MASK ROM 16M-Bit 2 M X 8 /1 M X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itc h a b le o rg a n iza tio n 2 ,0 9 7 ,1 5 2 » 6 (b y te m ode) 1 ,0 4 8 ,5 7 6 x 16 (w o rd m o d e ) T h e K M 2 3 C 1 6 0 0 0 is a fu lly s ta tic m a sk p ro g ra m m a b le

tl 0741

Abstract: ic tl 0741
Contextual Info: 23C16000C E T CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access tim e : 100ns(M ax.) • Supply voltage : single +5V • Current consumption

KMCJ532512

Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7

23C16000

Abstract: S47AA 23C1600 KM23C16000
Contextual Info: PRELIMINARY 23C16000 CMOS MASK ROM 1 6 M -B it 2 M X 8 / 1M X 16 C M O S M A S K R O M FEATURES GENERAL DESCRIPTION • Sw itchable organization 2,097,152 x 8 (byte mode) 1,048,576 x 16 (word mode) • Fast access tim e: 150ns (max.) • Supply voltage: single + 5V

GI9332

Abstract: mb831000 MB834000 23C2001 23C1001 23c1000 UPD23C1001 23c4001 HN62304 mb832000
Contextual Info: PROM/ROM index and cross reference 1.9 Jan 16, 2000 -Fujitsu 256K 32k x 8 MB83256 28 pin 512k 64k x 8 MB83512 (28 pin) 1M 128k x 8 MB831000 (32 pin) 2M 256k x 8 MB832000 (32 pin) 4M 256k x 16 / 512k x 8

Contextual Info: 23C16005AG ELECTRONICS CM OS Mask ROM 2M X 8/1M X 16 CMOS M ASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152x8(byte mode) 1,048,576x16(word mode) • Fast access time Random Access : 120ns (max.) Page Access: 50ns(max.) • Supply voltage : single +5V

KM23C1010

Abstract: KM23C512 KM44C1000 KM44C1002 KM23C2001 23c16000 KM75C01AP KM416C256-7 KM41C4000A KM75C01AJ
Contextual Info: MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM «ä SAM SUN G Electronics FUNCTION GUIDE MEMORY ICs — 4M bit FUNCTION GUIDE 4M X 1 KM41C4000-8 — - KM41C4000-10 KM41C4000L-8 - KM41C4000L-10 KM41C4001-8 - KM41C4001-10 KM41C4002-8 - KM41C4002-10

48TSOP1

Abstract: MX* 64M-Bit eprom TY15 km23c32000cg-10 23v322 KM23C16205BSG-10 7Y12
Contextual Info: MEMORY ICs 1. FUNCTION GUIDE INTRODUCTION 4M bit \ KM23C400QD G -8 512KX8 [- 1 KM23C4QOOD(G)-10 KM23C40QQD(E)TY-8 \ |— KM23C4Q00D(G)-12 ]- 1 KM23C4Q00D(E)'TY-10 |- 1 KM23C4000D(E)7Y-12 — [ KM23V4000D(E)TY-10 |- 1 KM23V4000D{E)TY-12 |-j KM23V4000D(E)TY-15