23V4000 Search Results

MB8316200

Abstract: uPD23C4000S TC533200 23C4000C UPD23C4000 23C32000a 624116 HN62318/338B
Contextual Info: MEMORY ICS FUNCTION GUIDE 3. CROSS REFERENCE GUIDE Density 4M bit 8M bit Samsung NEC Hitachi Sharp Toshiba Fujitsu K M 23C4000C UPD23C4001EB HN62344B LH534700 TC534000C M B834000A K M 23C4100C UPD23C4000S HN62444 LH534600B TC534200C M B834200A K M 23C 4; OOCET UPD23C4000S

23v4000

Abstract: M5EV
Contextual Info: 23V4000D £ TY7KM23S4000D(E)TY CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES G E N ER A L DESCRIPTION • 524,288 x 8 bit organization • Fast access time 3.3V O peration: 100ns(Max.) 3.0V O peration: 120ns(Max.) 2.5V O peration: 250n$(Max.) • Supply voltage

Contextual Info: 23V4000D E TY/KM23S4000D(E)TY CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 524,288 x 8 bit organization • Fast access time 3.3V Operation : 100ns(M ax.) 3.0V Operation : 120ns(Max.) 2.5V Operation : 250ns(M ax.) • Supply voltage

23C1001

Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5

Contextual Info: 23V4000D G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 524,283 x 8 bit organization • Fast access time 3.3V O peration: 1Q0ns(Max.) 3.0V O peration: 120ns(Max.) • Supply voltag e: single +3.0V/ single +3.3V • Current consumption

Contextual Info: 23V4000D E TY/KM23S4000D(E)TY CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 524,288 x 8 bit organization • Fast access time 3.3V Operation : 100ns(M ax.) 3.0V Operation : 120ns(M ax.) 2.5V Operation : 250ns(M ax.) • Supply voltage

23V4000DG

Contextual Info: 23V4000D G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM GENERAL DESCRIPTION FEATURES • 524,288 x 8 bit organization • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V • C urrent consumption

Contextual Info: 23V4000D G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM GENERAL DESCRIPTION FEATURES • 524,288 x 8 bit organization • Fast access time 3.3V Operation : 100ns(M ax.) 3.0V Operation : 120ns(M ax.) • Supply voltage : single +3.0V/ single +3.3V • Current consumption

Contextual Info: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Introduction . 11 2. Product Guide . 14 3. Ordering Information . 16