250US Search Results

Contextual Info: 250US Micro-Measurements General Purpose Strain Gages - Shear/Torque Pattern GAGE PATTERN DATA GAGE DESIGNATION RESISTANCE OHMS See Note 1 OPTIONS AVAILABLE See Note 2 CEA-XX-250US-120 CEA-XX-250US-350 120 ± 0.4% 350 ± 0.4% actual size DESCRIPTION Four-element full-bridge pattern for shear-strain measurement. Grids are spaced 90° apart, and 45° from

CEA-XX-250US-350

Contextual Info: 250US Micro-Measurements General Purpose Strain Gages - Shear/Torque Pattern GAGE PATTERN DATA GAGE DESIGNATION RESISTANCE OHMS See Note 1 OPTIONS AVAILABLE See Note 2 CEA-XX-250US-120 CEA-XX-250US-350 120 ± 0.4% 350 ± 0.4% actual size DESCRIPTION Four-element full-bridge pattern for shear-strain measurement. Grids are spaced 90° apart, and 45° from

strain gage

Abstract: strain Gages Vishay CEA-XX-250US-350
Contextual Info: 250US Vishay Micro-Measurements General Purpose Strain Gages - Shear/Torque Pattern GAGE PATTERN DATA GAGE DESIGNATION RESISTANCE OHMS See Note 1 OPTIONS AVAILABLE See Note 2 CEA-XX-250US-120 CEA-XX-250US-350 120 ± 0.4% 350 ± 0.4% P2 P2 DESCRIPTION Four-element full-bridge pattern for shear-strain measurement. Grids are spaced 90° apart, and 45° from

LAN9220

Abstract: nrzi circuit diagram MLT-3 lan-922
Contextual Info: LAN9220 16-bit Non-PCI Small Form Factor 10/100 Ethernet Controller with Variable Voltage I/O & HP Auto-MDIX Support PRODUCT FEATURES Datasheet Highlights „ „ „ „ „ „ „ Efficient architecture with low CPU overhead Easily interfaces to most 16-bit embedded CPU’s

FCH76N60

Contextual Info: SupreMOS TM FCH76N60N N-Channel MOSFET 600V, 76A, 36mΩ Features Description o • 650V @TJ = 150 C The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based

FDA20

Abstract: *20N50F
Contextual Info: UniFET TM FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET Features Description • 22A, 500V, RDS on = 0.23Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FDPF4N60NZ

Contextual Info: UniFET-IITM FDP4N60NZ / FDPF4N60NZ N-Channel MOSFET 600V, 3.8A, 2.5Ω Features • RDS on = 1.9Ω ( Typ.)@ VGS = 10V, ID = 1.9A Description • Low Gate Charge ( Typ. 8.3nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar

Contextual Info: Industrial Line – T8W Series 8W 4:1 SINGLE & DUAL OUTPUT HIGH PERFORMANCE DC/DC CONVERTER Specifications INPUT Voltage range 24V nominal input 9-36VDC 48V nominal input 18-75VDC 110V nominal input 43-160VDC Input filter Pi type. Input surge voltage 24V input

Contextual Info: Datasheet 4-wire Resistive Touch Screen Controller BU21029MUV ●General Description Unlike most resistive touch screen controllers, the BU21029MUV 4-wire resistive touch-screen controller can generate data that enables dual touch detection. The Host processor can use this data to detect single

arco trimmer

Contextual Info: ARF521 165V, 150W, 150MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF521 is an RF power transistor designed for high voltage operation in broadband HF, narrow band ISM and MRI power amplifiers up to 150MHz. • High Voltage Breakdown and Large SOA • Specified 125 Volt, 81MHz Characteristics:

Contextual Info: CMX7143 CML Microcircuits Multi-Mode Wireless COMMUNICATION SEMICONDUCTORS Data Modem DATASHEET D/7143_FI2.0/1 September 2007 Advance Information FI 2.x Four-Level FSK Packet Data Modem Features • Multiple modulation types • Flexible bit rates • Automatic frame sync detection

Contextual Info: Datasheet AC/DC Drivers Power Factor Correction and Quasi-Resonant DC/DC converter IC BM1C001F „ PFC Output level setting function „ PFC ON/OFF level setting „ QR low power when load is light Burst operation and frequency decrease function „ QR maximum frequency control (120kHz)

Contextual Info: ︳ EC9B SERIES 30 WATT 2:1 INPUT DC-DC CONVERTERS FEATURES * 30W Isolated Output * Efficiency to 92% * 2’’ X1’’ Six-Sided Shield Metal Case * Fixed Switching Frequency * 2: 1 Input Range * Regulated Outputs * Input Under Voltage Protection * Over Current Protection

Contextual Info: LAN9217 16-bit High-Performance Single-Chip 10/100 Ethernet Controller with HP Auto-MDIX Support PRODUCT FEATURES Datasheet Highlights „ „ „ „ „ „ „ „ Target Applications „ „ „ „ „ „ „ „ Video distribution systems, multi-room PVR Cable, satellite, and IP set-top boxes

RT9018B

Abstract: rt9018 RT9018A
Contextual Info: RT9018A/B Maximum 3A, Ultra Low Dropout Regulator General Description Features The RT9018A/B is a high performance positive voltage regulator designed for use in applications requiring very low Input voltage and very low dropout voltage at up to 3A Peak . It operates with a VIN as low as 1.4V and VDD

Contextual Info: BU BUF08832 F08 832 SBOS476C – AUGUST 2009 – REVISED JULY 2011 www.ti.com Programmable Gamma-Voltage Generator and High Slew Rate VCOM with Integrated Two-Bank Memory Check for Samples: BUF08832 FEATURES DESCRIPTION • • • • • • The BUF08832 offers eight programmable gamma

Contextual Info: BUF16821 BU F16 821 SBOS428C – JULY 2008 – REVISED JULY 2011 www.ti.com Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory Check for Samples: BUF16821 FEATURES DESCRIPTION • • • • • The BUF16821 offers 16 programmable gamma

NTC B 3380

Contextual Info: TPS65720 TPS65721 www.ti.com SLVS979 – OCTOBER 2009 PMU for Bluetooth Headsets Check for Samples: TPS65720 TPS65721 FEATURES 1 • • 2 • • • • • • • • • • • • • • Battery Charger With Power Path Management 28 V Rated Power Path With:

APT54GA60B

Abstract: APT54GA60BD30 APT54GA60SD30 MIC4452 SD30
Contextual Info: APT54GA60BD30 APT54GA60SD30 600V High Speed PT IGBT TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is APT54GA60SD30 -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise

APT36GA60B

Abstract: APT36GA60S MIC4452 c 1853
Contextual Info: APT36GA60B APT36GA60S 600V High Speed PT IGBT APT36GA60S TO -2 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 47 D3PAK through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

APT10035LLL

Abstract: APT100GT120JRDL
Contextual Info: 1200V APT100GT120JRDL G *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode IGBT E E The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed.

APT28GA60BD15

Abstract: APT6017LLL MIC4452
Contextual Info: APT28GA60BD15 600V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

APT28GA60K

Abstract: MIC4452
Contextual Info: APT28GA60K 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

transformer 0-12v

Abstract: J101 0-12V 2204B MRF151 VRF151 Transistor C2 Unelco J101
Contextual Info: VRF151 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF151 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation