25EB Search Results

Contextual Info: SN74LVC16543 16-BIT REGISTERED TRANSCEIVER WITH 3-STATE OUTPUTS 3CAS317A- NOVEMBER 1993 - REVISED OCTOBER 199S | • Member of the Texas Instruments Wldobua Family • EP/C™ Enhanced-Performance Implanted CMOS Submicron Process • Typical V q l p (Output Ground Bounce)

SN74LVC16544

Contextual Info: SN74LVC16544 16-BIT REGISTERED TRANSCEIVER WITH 3-STATE OUTPUTS SCAS351 - MARCH 1994 Member of the Texas Instruments Wldebus Family EPIC™ Enhanced-Performance Implanted CMOS Submicron Process DGG OR DL PACKAGE ftOP VIEW) 1ÜÊÂB[ 1 Typical V q l p (Output Ground Bounce)

Contextual Info: SN74LVC16952 16-BIT REGISTERED TRANSCEIVER WITH 3-STATE OUTPUTS SCAS320 - NOVEMBER 1993 - REVISED MARCH 1994 Member of the Texas Instruments Wldebus Family DOG OR DL PACKAGE TOP VIEW EPIC™ (Enhanced-Performance Implanted CMOS) Submicron Process 10EA B L 1

Samsung EOL

Abstract: IS42S81600F is42s16320 IS43DR16320 IS42S32200L IS49NLC36800 IS43R32400E IS46R Mobile SDRAM IS42S32200E
Contextual Info: Industrial Grade Memory Products Selecting the Right ISSI Industrial Grade Memory Fastest Random Access Access <20ns 288-576Mb Memory No DRC* Lower cost/bit 18-72Mb RLDRAM 10-20ns Easy Interface, Low Power Higher Density Ultra Low Power Synch SRAM <5ns Asynch SRAM

IS43DR81280B

Abstract: IS46DR16640B IS43DR16640B-25DBL IS46DR16640B-3DBLA IS43DR16640B IS43DR16640B-3DBL
Contextual Info: IS43/46DR81280B/L, IS43/46DR16640B/L PRELMINARY INFORMATION AUGUST 2012 1Gb x8, x16 DDR2 SDRAM FEATURES •               Clock frequency up to 400MHz 8 internal banks for concurrent operation

2B0365

Abstract: 74ls244 latch ic Z8127 z80 multibus Am286
Contextual Info: Am8163/Am8167 A m 816 3 /A m 816 7 Dynamic Memory Timing, Refresh and EDC Controllers DISTINCTIVE CHARACTERISTICS • Complete CPU to dynamic RAM control interface • R A S /M S E L/C A S Sequencer to eliminate delay lines • Complete EDC/data path controls for W ord/Byte read

Acopian Power Supply Model A24H1200

Abstract: Acopian DB12-30 Acopian Power Supplies transistor marking code wm9 24EB60 Acopian DB15-50 p022h 15j100 B24G210 A24H1500
Contextual Info: ALL ACOPIAN POWER SUPPLIES ARE MADE IN THE U.S.A. POWER SUPPLY SELECTION GUIDE 1 of 2 Shipped within 6 / 9 DAYS HIGH VOLTAGE REGULATED, AC-DC & DC-DC To 30 KV PAGE { 0-30 kV 1- 60 mA 30 - 60 watts MODULAR Single output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2-5

IS43DR16320B

Abstract: IS43DR16320B-37CBLI IS43DR86400B37CBLI IS43DR16320 IS43DR16320B-3DBLI IS46DR86400B3DBLA2 46DR86400B 400B 800E IS46DR16320B-3DBLA2
Contextual Info: IS43/46DR86400B, IS43/46DR16320B PRELIMINARY INFORMATION MARCH 2010 512Mb x8, x16 DDR2 SDRAM FEATURES • • • • • • • • • • • • • • • Clock frequency up to 400MHz Posted CAS Programmable CAS Latency: 3, 4, 5 and 6

BCP25

Abstract: laser diode spice model simulation 10xxxxh 8XXXXX hdmi shift SDI BCP250 APD spice model
Contextual Info: a Nonvolatile Memory, Dual 1024-Position Programmable Resistors ADN2850* FEATURES Dual, 1024-Position Resolution 25 k⍀, 250 k⍀ Full-Scale Resistance Low Temperature Coefficient: 35 ppm/؇C Nonvolatile Memory1 Preset Maintains Wiper Settings Permanent Memory Write-Protection

EFD34

Abstract: DS161R Motor Control Center wiring diagram abb TFK catalog EX-88 WESTINGHOUSE motor life line westinghouse mcp breaker TFK 543 TC236
Contextual Info: Industrial Control & Circuit Breakers Section C Innovative, intelligent NEC and IEC solutions safely and efficiently control power and protect circuits in explosive, wet, and corrosive environments worldwide. New Products in the Control Product Line Section

Contextual Info: IS43DR86400, IS43/46DR16320 PRELIMINARY INFORMATION NOVEMBER 2009 512Mb x8, x16 DDR2 SDRAM FEATURES • • • • • • • • • • • • • • • Clock frequency up to 400MHz Posted CAS Programmable CAS Latency: 3, 4, 5 and 6

la 78042

Abstract: uPI Semiconductor Corp western 142c 4SH 0202 K 176 LE, K 561 LN UCS-51 a295 ac hen nsd
Contextual Info: in te r APPLICATION BRIEF AB-41 Septem ber 1988 lntel C o rp o ra tio n m akes no w a rranty for the use o f its p ro d u c ts and assurnes no responsibility fo r any erro rs w hich m ay app ear in th is d o c u m e n t nor d o e s it m a k e a c o m m itm e n t to u p d a te the in fo rm a tio n c o n ta in e d herein

IS43DR16640A-3DBL

Abstract: IS43DR16 IS43DR16640A-25DBL 46DR16640A is43dr16640a3dbli IS43DR16640A-25EBLI IS43DR16640A-3DBI IS43DR16640A 800E IS43DR16640A-3DBLI
Contextual Info: IS43/46DR81280A, IS43/46DR16640A MARCH 2011 1Gb x8, x16 DDR2 SDRAM FEATURES •                Clock frequency up to 400MHz 8 internal banks for concurrent operation 4-bit prefetch architecture

western 142c

Abstract: ge c20f intel 8231 MCS-51 MACRO ASSEMBLER V2.2 854140 1401 intel 83C51FA ASM51 8635 intel 910-555
Contextual Info: APPLICATION BRIEF September 1988 Software Serial Port Implemented with the PCA BETSY JONES ECO APPLICATIONS ENGINEER k lntelorporat~on.1988- I Order Number: 270531-002 lntel Corporation makes no warranty for the use of its products and assurnes no responsibility for any errors which may

Contextual Info: IS43/46DR86400B, IS43/46DR16320B DECEMBER 2011 512Mb x8, x16 DDR2 SDRAM FEATURES •               Clock frequency up to 400MHz Posted CAS Programmable CAS Latency: 3, 4, 5 and 6 Programmable Additive Latency: 0, 1, 2, 3, 4 and 5

IS49NLC96400

Contextual Info: IS49NLC96400,IS49NLC18320,IS49NLC36160 576Mb x9, x18, x36 Common I/O RLDRAM 2 Memory ADVANCED INFORMATION JULY 2011 FEATURES •          533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4Gb/s peak bandwidth (x36 at 533 MHz

M1017

Abstract: IS49NLS18160
Contextual Info: IS49NLS93200,IS49NLS18160 288Mb x9, x18 Separate I/O RLDRAM 2 Memory ADVANCED INFORMATION JULY 2012 FEATURES •         533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4 Gb/s peak bandwidth (x18 Separate I/O at

IS43DR16640

Abstract: DDR2 SDRAM IS46DR16640-3DBLA1
Contextual Info: IS43/46DR81280, IS43/46DR16640 PRELIMINARY INFORMATION MARCH 2010 1Gb x8, x16 DDR2 SDRAM FEATURES • • • • • • • • • • • • • • • Clock frequency up to 533MHz 8 internal banks for concurrent operation

IS46DR16320B

Abstract: DDR2800D BGA84 DDR2800E DDR2-1066F IS43DR16320B BGA60 IS43DR16320 BGA-84 ddr2
Contextual Info: 1Gb DDR2 Up to 533MHz clock speed PRODUCT FEATURES: • • • • • • • • • • TOP APPLICATIONS: • Telecom Access Nodes PON OLT, DSLAM, CMTS, Wireless Aggregation Nodes VoIP Switches and Routers Packet Optical Transport • Automotive Infotainment

Contextual Info: Philips Semiconductors Objective Specification 16-Bit registered transceiver; 3-state 74ALVCH16952 FEATURES • • • • • • • QUICK REFERENCE DATA GND = 0 V; Tmb = 25 °C; t, = t, = 2.5 ns Wide supply voltage range of 1.2 V to 3.6 V In accordance with JEDEC

415v two phase welding machine str CIRCUIT DIAGRAM

Abstract: shell tellus c10 oil toroid international ltd P/N TT63-630 shell tellus c10 oil data sheet 33-20l capacitor
Contextual Info: ELMARK Has been a registered trademark for Europe since the year of 2000 and is part of the international company ELMARK HOLDING SC. Our company is licensed for the manufacture of the full range of professional low-voltage electrical equipment. The Headquarters of ELMARK HOLDING AD are situated in Varna, Bulgaria. There is our logistics center which

IS43DR16640A-25DBL

Abstract: IS43DR16640A IS43DR16640A-3DBL IS43DR16640A-3DBI 800E FBGA400 46DR16640A
Contextual Info: IS43/46DR81280A, IS43/46DR16640A PRELIMINARY INFORMATION MARCH 2010 1Gb x8, x16 DDR2 SDRAM FEATURES • • • • • • • • • • • • • • • Clock frequency up to 533MHz 8 internal banks for concurrent operation

Contextual Info: IS43/46DR81280B/L, IS43/46DR16640B/L 1Gb x8, x16 DDR2 SDRAM JULY 2013 FEATURES •               Clock frequency up to 400MHz 8 internal banks for concurrent operation 4-bit prefetch architecture

IS43DR16640A-3DBI

Abstract: IS43DR16640A
Contextual Info: IS43DR81280A, IS43/46DR16640A PRELIMINARY INFORMATION DECEMBER 2009 1Gb x8, x16 DDR2 SDRAM FEATURES • • • • • • • • • • • • • • • Clock frequency up to 533MHz 8 internal banks for concurrent operation