25M SOT89 Search Results

ZX5T869Z

Abstract: ZX5T869ZTA
Contextual Info: ZX5T869Z 25V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 25V : RSAT = 25m ; IC = 5.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in

sot89 "NPN TRANSISTOR"

Abstract: MARKING 7A SOT89 NY TRANSISTOR MAKING ZX5T869Z ZX5T869ZTA
Contextual Info: ZX5T869Z 25V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 25V : RSAT = 25m ; IC = 6.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in

ZXTN2005Z

Abstract: ZXTN2005ZTA
Contextual Info: ZXTN2005Z 25V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 25V : RSAT = 25m ; IC = 5.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits

ZXTN25012EZ

Abstract: TS16949 ZXTN25012EZTA ZXTP25012EZ
Contextual Info: ZXTN25012EZ 12V NPN high gain transistor in SOT89 Summary BVCEO > 12V BVECX > 6V hFE > 500 IC cont = 6.5A VCE(sat) < 38mV @ 1A RCE(sat) = 25m⍀ PD = 2.4W Complementary part number ZXTP25012EZ Description C Packaged in the SOT89 outline this new ultra high gain, low saturation

2005Z

Contextual Info: ZXTN2005Z 25V NPN LOW SATURATION M EDIUM POWER TRANSISTOR IN SOT89 SUM M ARY BV CEO = 25V : RSAT = 25m ; IC = 5.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 25V NPN transistor offers extrem ely low on state losses m aking it ideal for use in DC-DC circuits

APM2050N

Abstract: APM2050 APM2050ND STD-020C apm*2050n
Contextual Info: APM2050ND N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/5A, RDS ON =25mΩ(typ.) @ VGS=10V RDS(ON)=30mΩ(typ.) @ VGS=4.5V RDS(ON)=50mΩ(typ.) @ VGS=2.5V • • • Top View of SOT-89 Super High Dense Cell Design Reliable and Rugged

apm2050

Abstract: APM2050N apm*2050n APM2050ND A102 marking code IR SOT89 apm20
Contextual Info: APM2050ND N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/5A, RDS ON =25mΩ(Typ.) @ VGS=10V G RDS(ON)=30mΩ(Typ.) @ VGS=4.5V D RDS(ON)=50mΩ(Typ.) @ VGS=2.5V • • • S Top View of SOT-89 Super High Dense Cell Design Reliable and Rugged

sem 2005 ic equivalent

Contextual Info: ZXTP2009Z 40V PNP HIGH GAIN LOW SATURATION M EDIUM POWER TRANSISTOR IN SOT89 SUM M ARY BV CEO = -40V : RSAT = 29m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 40V PNP transistor offers low on state losses m aking it ideal for use in DC-DC circuits, line

Contextual Info: ZX5T3Z 40V PNP HIGH GAIN LOW SATURATION M EDIUM POWER TRANSISTOR IN SOT89 SUM M ARY BV CEO = -40V : RSAT = 29m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 40V PNP transistor offers low on state losses m aking it ideal for use in DC-DC circuits,

Contextual Info: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FCX596 ISSUE 3 - NOVEMBER 1995_ O P A R T M A R K IN G D E T A IL - P96 ABSOLUTE MAXIMUM RATINGS. PARAM ETER SYM BO L Collector-Base Voltage VALUE UNIT V V V CBO -220 Collector-Emitter Voltage V CEO

25M SOT89

Abstract: ST5415
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 25 30 >= 40 45 50 BFT28B BFT28B STIP2006 BSP15 BST15 BST15 MJ5415 MJ5415 MM5415 MM5415 MM5415 ST5415 2N5415 TRSP5415 TRSP2006 STIP20 STIP205 ~~~~~~X 55 60 65 70 75 80 85 90 TRSP20X TRSP20X5 TRSP20X5

bf223

Abstract: PE210C BF311 PE210B 2SC1293 bfy88 BF330 nec RF package SOT89 2SC1260 BF497
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO BSW43 BSW43 BSW43 BSX52 MMBT4124 MMBT4124 MMBT4124 KT379B ZTX114 2SC137 -5 10 ~~~~ 2SD1581M 2SD1581L JE9143A 2SD1581K JE9143B JE9143 JE9143C 2N5188 -15 20 ~~~~~D BSY58 BF374 BF375C 2SC1293 2SC1293 2SC1293

2SC288a

Abstract: MMBR2857 TP390 TP393 S763T 40518 BF378 2N5652 s763 72 sot 23
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO -5 10 15 20 25 30 35 40 2N3600 2SC251 2SC251A 2SC251A 2SC252 2SC252 2SC253 BFX73 2N2729 M90 BF689 BF689 BFS17 2SC387 AG-TM 2N3833 2N3833 2N3834 2N3834 2N3834 2N3835 2N3835 K2115 ST2120 MMBR2857 40517

Motorola MPSU95

Abstract: 2N3205 2S8632K SML3552 80376 2S81188 25M SOT89 2S81
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 >= 30 Rohm Co Ltd Rohm Corp Rohm Corp Rohm Co Ltd Sanyo Elect Semelab Semelab Semelab Semelab Semelab ~MLt;9t;U1 ~melaD SML3501 SML3505 SML3509 SML3513 2N3205 2N3208 SOT3552 SOT3552 SOT3552 Semelab

MRF472

Abstract: MRF245 MRF243 MPSA13K MPS6579 MRF420 BF497 MRF304 MRF250 PE210B
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO BSW43 BSW43 BSW43 BSX52 MMBT4124 MMBT4124 MMBT4124 KT379B ZTX114 2SC137 -5 10 ~~~~ 2SD1581M 2SD1581L JE9143A 2SD1581K JE9143B JE9143 JE9143C 2N5188 -15 20 ~~~~~D BSY58 BF374 BF375C 2SC1293 2SC1293 2SC1293

tl2222a

Abstract: 2N5381 A5T3904 2sc2720 GG20N 2n3688 mmt3904 sot23 80ng MM3904 BF252
Contextual Info: RF LOW•POWER SILICON NPN Item Number Part Number V BR CEO 5 10 UPI2222B PN3947 PN3947 PN3947 BSX32 2N6375 BSR17R 5MBT3904 SOR3904 (A) P2N2222A ~t~~~2A 15 20 25 30 S03904 TL2222A TMPT3904 BSS67 BSS67R TP5381 A5T3904 EN3904 EN3_904 MMBT3904 MMT3904 MM3904 MM3904

2N6805

Abstract: 2N6456 2N6803 20C36 2NJ771 RCA 2n6674 20C84 2N6617 2NJ771A 2N6525
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 >= 30 Rohm Co Ltd Rohm Corp Rohm Corp Rohm Co Ltd Sanyo Elect Semelab Semelab Semelab Semelab Semelab ~MLt;9t;U1 ~melaD SML3501 SML3505 SML3509 SML3513 2N3205 2N3208 SOT3552 SOT3552 SOT3552 Semelab

PA6015A

Abstract: 2n2570 KT3101A-2 BF250 SG119 2N1269 2SC1071 2S078 LOW-POWER SILICON NPN PA6015
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 2Nl199A 2N770 2N770 2N3511 2N918 2N1268 2N1271 2N1139 2N728 FMMT2369 2N2~t U 15 20 2N1006 2Nl199 PN5131 PN5131 PN5131 2N476 2N1417 2N1663 2N5131 ~~~~~ 25 30 2N771 MPS5131 MPS5131 AST5220 2N5220 BF250 04024 A5T5219

bfw34 diode

Abstract: 2SC562 BSX70 LOW-POWER SILICON NPN BFR36 NA31 L/bfw34 diode 2SC941 bfw34
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386

2SC1312

Abstract: 2SC1840E BA 92 SAMSUNG TI480 2N2888 LOW-POWER SILICON NPN 2SC900 PET8002 2N2856 25M SOT89
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 5 -10 NB211XJ NB211YJ MMBC1622D7 MMBC1622D7 MMBC1622D7 2SC1840F 2SCl840F NBOllEU NBOllFU NB013EU ~gg~~~~ -15 20 NBOllFK NB013EK NB013FK NB013FL PET8002 PET8004 MMBC1622D8 MMBC1622D8 TMPT1622000 25 30 2SC1840E 2SCl840E

Contextual Info: ZXTP2013Z 100V PNP LOW SATURATION M EDIUM POWER TRANSISTOR IN SOT89 SUM M ARY BV CEO = -100V : RSAT = 57m ; IC = -3.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V PNP transistor offers low on state losses m aking it ideal for use in DC-DC circuits, line

Contextual Info: ZXTP2008Z 30V PNP LOW SATURATION M EDIUM POWER TRANSISTOR IN SOT89 SUM M ARY BV CEO = -30V : RSAT = 24m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 30V PNP transistor offers low on state losses m aking it ideal for use in DC-DC circuits, line sw itching and

Contextual Info: SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 OCTOBER 1995_ O_ FEATURES * 150 Volt VCE0 * 1 A m p continuous current P A R T M A R K IN G D E T A IL - N95 ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M B O L VALUE UNIT VCBO 170 V Collector-Emltter Voltage

BEL187

Abstract: NA22XX BC262A LOW-POWER SILICON PNP 2SA523 NA22XH
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO -5 -10 -15 20 Sanyo Elect Sanyo Elect NthAmerSemi CrimsonSemi CentralSemi NthAmerSemi V/O Electro Sanyo Elect Sanyo Elect Sanvo Elect ~~:~~~8U ~anyo ~Iect BEl187 2N3576 2N5455 2N5056 ST5771-1 ST5771-2