25N8 Search Results

CoolMOS Power Transistor

Abstract: POWER MOSFET 4600 UPS SIEMENS 25N80C
Contextual Info: Power MOSFET ISOPLUS220TM IXKC 25N80C Electrically Isolated Back Surface Low RDS on , High Voltage, CoolMOSTM Superjunction MOSFET VDSS = 800 V ID25 = 20 A Ω RDS(on) = 150 mΩ Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

M27N80

Contextual Info: VDSS HiPerFET Power MOSFETs IXFK 27N80 IXFK 25N80 IXFN 27N80 IXFN 25N80 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 800 V 800 V 800 V 800 V D DS on ^D25 27 25 27 25 A A A A 0.30 0.35 0.30 0.35 a £2 £2 ß TO-264 AA (IXFK) Symbol Test Conditions

Contextual Info: Power MOSFET ISOPLUS220TM IXKC 25N80C Electrically Isolated Back Surface Low RDS on , High Voltage, CoolMOSTM Superjunction MOSFET VDSS = 800 V = 25 A ID25 Ω RDS(on) = 150 mΩ Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

25N80C

Contextual Info: IXKC 25N80C COOLMOS * Power MOSFET ISOPLUSTM Package ID25 = 25 A VDSS = 800 V RDS on max = 150 mΩ N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface ISOPLUS220 D G G D S S E72873 Features MOSFET Symbol Conditions

IXFK27N80

Abstract: IXFN27N80
Contextual Info: nixYs v DSS HiPerFET Power MOSFETs IXFK 27N80 IXFK 25N80 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFN 27N80 IXFN 25N80 800 800 800 800 V V V V p ^D25 27 A 25 A 27 A 25 A DS on 0.30 0.35 0.30 0.35 a Q £2 a TO-264 AA (IXFK) Symbol

27N80

Abstract: 25n80 IXFK27N80 IXFN27N80 125OC
Contextual Info: Not for New Designs VDSS HiPerFETTM Power MOSFETs IXFK IXFK IXFN IXFN N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 27N80 25N80 27N80 25N80 800 800 800 800 ID25 V V V V RDS on 27 A 25 A 27 A 25 A 0.30 0.35 0.30 0.35 Ω Ω Ω Ω TO-264 AA (IXFK)

IXKR25N80C

Contextual Info: IXKR 25N80C Advanced Technical Information COOLMOS * Power MOSFET ID25 = 25 A VDSS = 800 V RDS on = 125 mW in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ISOPLUS 247TM D * G E153432

Contextual Info: □ IXYS VDSS HiPerFET Power MOSFETs 27N80 IXFK 25N80 IXFN 27N80 IXFN 25N80 ix f k N-Channel Enhancement Mode AvalancheRated, High dv/dt, Lowtrr 800 800 800 800 V V V V D ^D25 27 25 27 25 A A A A D S o n 0.30 0.35 0.30 0.35 Q Q Q Q TO -264A A (IX FK )

CoolMOS Power Transistor

Abstract: ISOPLUS247 IXKR25N80C
Contextual Info: Advanced Technical Information VDSS CoolMOS Power MOSFET in ISOPLUS247TM Package RDS on 25 A 125 mΩ Ω 800 V IXKR 25N80C N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ID25 D G *) S ISOPLUS 247TM E153432

power switching

Abstract: ISO264 ISO264TM ID90
Contextual Info: ADVANCE TECHNICAL INFORMATION CoolMOSTM Power MOSFET IXKG 25N80C ISO264TM Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VGS Continuous ±20

25N80C

Abstract: 25n80 E72873 mosfet b4
Contextual Info: IXKC 25N80C CoolMOS 1 Power MOSFET ISOPLUSTM Package ID25 = 25 A VDSS = 800 V RDS on) max = 150 mΩ N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface D ISOPLUS220 G G D q S S isolated back surface E72873 Features

27N80

Abstract: 25n80 IXFN27N80 IXFK27N80 125OC
Contextual Info: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol IXFK 27N80 IXFK 25N80 IXFN 27N80 IXFN 25N80 Test Conditions VDSS TJ = 25°C to 150°C 800 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 800 800 V VGS Continuous ±20

IXFN27N80

Contextual Info: HiPerFET Power MOSFETs IXFK IXFK IXFN IXFN N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowt^ 27N80 25N80 27N80 25N80 D v DSS ^D25 800 V 800V 800 V 800 V 27 A 25 A 27 A 25 A DS on 0.30 n 0.35 O 0.30 Q 0.35 O TO-264AA(IXFK) Symbol vw DSS Test Conditions

25N80C

Abstract: "VDSS 800V" mosfet ISOPLUS247 25n80
Contextual Info: IXKR 25N80C Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 25 A VDSS = 800 V RDS on) = 125 mW in ISOPLUS247™ Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ISOPLUS 247™ D G E153432

27N80

Abstract: U/25/20/TN26/15/850/25N80
Contextual Info: Not for New Designs VDSS HiPerFETTM Power MOSFETs IXFK IXFK IXFN IXFN N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 27N80 25N80 27N80 25N80 800 800 800 800 ID25 V V V V RDS on 27 A 25 A 27 A 25 A 0.30 0.35 0.30 0.35 Ω Ω Ω Ω TO-264 AA (IXFK)

Contextual Info: IXKR 25N80C Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 25 A VDSS = 800 V RDS on) = 125 mW in ISOPLUS247™ Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ISOPLUS 247™ D G G E53432

Contextual Info: ADVANCE TECHNICAL INFORMATION CoolMOS Power MOSFET ISOPLUS220TM IXKC 25N80C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VGS Continuous

Contextual Info: ADVANCE TECHNICAL INFORMATION CoolMOS Power MOSFET ISOPLUS220TM IXKC 25N80C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VGS Continuous

STK1OC68-35

Contextual Info: STK10C68 CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM SlfTlTEH FEATURES DESCRIPTION 25, 30, 35 and 45ns Access Times 12,15, 20 and 25ns Output Enable Access Unlimited Read and Write to SRAM Hardware STORE Initiation Automatic STOflETimlng 104 or -tos STORE cycles to EEPROM

Contextual Info: 25N80K5, 25N80K5, 25N80K5, 25N80K5 N-channel 800 V, 0.19 Ω typ., 19.5 A SuperMESH 5 Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packages Datasheet − production data Features TAB Order codes 3 3 1 1 D2PAK 2 VDS @ TJmax RDS on max ID

Contextual Info: STK11C68 CMOS nvSRAM High Performance ^ x 8 Nonvolatile Static RAM SlfflTEH FEATURES DESCRIPTION • • • • • The Simtek STK11C6 8 is a fast static RAM 25,30,35, 45ns , with a nonvolatile electrically-erasable PROM (EEPROM) element incorporated in each static memory

ixys ixfn 55n50

Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
Contextual Info: i , i - •*.*• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ | Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01

C1162

Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)

wabash

Abstract: 25N80A LHi 978 25n80 25N100 25N90 IXGH25N100 IXGH25N80 IXGH25N90 IXGM25N100
Contextual Info: I X Y S LOKM " 03 4686226 I X Y S C O R P DE I 4bübddb UUUUddU Jj 03E 00220 D 25N80, 90, 100 25N80, 90, 100 25 AMPS, 800-1000 VOLTS MAXIMUM RATINGS Sym. 25N80 25N80 IXGH25N90 IXGM25N90 IXGH25N100 IXGM25N100 Unit Drain-Source Voltage 1 Vd ss