27N80 Search Results

27n80q

Contextual Info: HiPerFETTM Power MOSFETs IXFK 27N80Q IXFR 27N80Q IXFX 27N80Q Q-CLASS VDSS ID25 RDS on trr £ 250 ns Single MOSFET Die PLUS 247TM (IXFX) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr G Symbol Test Conditions VDSS VDGR T J = 25°C to 150°C

M27N80

Contextual Info: VDSS HiPerFET Power MOSFETs IXFK 27N80 IXFK 25N80 IXFN 27N80 IXFN 25N80 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 800 V 800 V 800 V 800 V D DS on ^D25 27 25 27 25 A A A A 0.30 0.35 0.30 0.35 a £2 £2 ß TO-264 AA (IXFK) Symbol Test Conditions

IXFK27N80

Abstract: IXFN27N80
Contextual Info: nixYs v DSS HiPerFET Power MOSFETs IXFK 27N80 IXFK 25N80 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFN 27N80 IXFN 25N80 800 800 800 800 V V V V p ^D25 27 A 25 A 27 A 25 A DS on 0.30 0.35 0.30 0.35 a Q £2 a TO-264 AA (IXFK) Symbol

27N80

Abstract: 25n80 IXFK27N80 IXFN27N80 125OC
Contextual Info: Not for New Designs VDSS HiPerFETTM Power MOSFETs IXFK IXFK IXFN IXFN N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 27N80 25N80 27N80 25N80 800 800 800 800 ID25 V V V V RDS on 27 A 25 A 27 A 25 A 0.30 0.35 0.30 0.35 Ω Ω Ω Ω TO-264 AA (IXFK)

power mosfet ixfn 27n80q

Abstract: 27N80Q S-7600 1M800
Contextual Info: HiPerFETTM Power MOSFETs Q-Class IXFN 27N80Q VDSS ID25 RDS on Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr D G Preliminary data sheet Symbol VDSS = 800 V = 27 A Ω = 320 mΩ S Test Conditions S Maximum Ratings TJ = 25°C to 150°C

27N80Q

Abstract: TO-264
Contextual Info: HiPerFETTM Power MOSFETs IXFK 27N80Q IXFR 27N80Q IXFX 27N80Q Q-CLASS VDSS ID25 RDS on trr £ 250 ns Single MOSFET Die PLUS 247TM (IXFX) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr G Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C

Contextual Info: □ IXYS VDSS HiPerFET Power MOSFETs 27N80 IXFK 25N80 IXFN 27N80 IXFN 25N80 ix f k N-Channel Enhancement Mode AvalancheRated, High dv/dt, Lowtrr 800 800 800 800 V V V V D ^D25 27 25 27 25 A A A A D S o n 0.30 0.35 0.30 0.35 Q Q Q Q TO -264A A (IX FK )

TO-264 Jedec package outline

Abstract: d2580 d2560 IXFK27N80 IXFN27N80
Contextual Info: Advanced Technical Information HiPerFET Power MOSFETs IXFK 27N80 IXFK 27N80 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr p VDSS ^D25 800 V 800 V 27 A 27 A DS on 0.32 Q 0.30 £2 trr —< 250 ns TO-264 AA (IXFK) Sym bol Test C onditions

27N80

Abstract: 25n80 IXFN27N80 IXFK27N80 125OC
Contextual Info: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol IXFK 27N80 IXFK 25N80 IXFN 27N80 IXFN 25N80 Test Conditions VDSS TJ = 25°C to 150°C 800 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 800 800 V VGS Continuous ±20

Contextual Info: HiPerFET TM Power MOSFETs IXFK 27N80Q IXFX 27N80Q VDSS ID25 = 800 V = 27 A Ω = 320 mΩ Q-CLASS RDS on Single MOSFET Die trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C

27N80Q

Abstract: IXFX27N80Q 27N80
Contextual Info: HiPerFETTM Power MOSFETs VDSS ID25 IXFK 27N80Q IXFX 27N80Q = 800 V = 27 A Ω = 320 mΩ Q-CLASS RDS on Single MOSFET Die trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C

IXFN27N80

Contextual Info: HiPerFET Power MOSFETs IXFK IXFK IXFN IXFN N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowt^ 27N80 25N80 27N80 25N80 D v DSS ^D25 800 V 800V 800 V 800 V 27 A 25 A 27 A 25 A DS on 0.30 n 0.35 O 0.30 Q 0.35 O TO-264AA(IXFK) Symbol vw DSS Test Conditions

27N80

Abstract: U/25/20/TN26/15/850/25N80
Contextual Info: Not for New Designs VDSS HiPerFETTM Power MOSFETs IXFK IXFK IXFN IXFN N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 27N80 25N80 27N80 25N80 800 800 800 800 ID25 V V V V RDS on 27 A 25 A 27 A 25 A 0.30 0.35 0.30 0.35 Ω Ω Ω Ω TO-264 AA (IXFK)

transistor 12n60c

Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
Contextual Info: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design

ixys ixfn 55n50

Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
Contextual Info: i , i - •*.*• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ | Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01

C1162

Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)

sd 20n60

Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
Contextual Info: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06

7n60b

Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3

IXfk 75 N 50

Abstract: 15N80 50N-2 110N06 n 100N10 110N06 10n90 IXFH40N30 ixfk73n30
Contextual Info: HiPerFET Power MOSFETs N-Channel Enhancement-Mode with Fast Intrinsic Diode Type DSS 0 25 DS(on) max. C lss typ. Tc = 25°C New Tc = 25°C n C rss typ. max. qb max. thJC max. D max. pF PF ns nC K/W W IXFH 76N06-11 IXFH 76N06-12 60 76 0.011 0.012 4400

mosfet 4800

Abstract: ixfn27n80 150N10 IXFN44N50 RD5A Co701 4800 power mosfet IXFN36n60 ixfm40n30 ixfm35n30
Contextual Info: HiPerFET Power MOSFETs N-Channel Enhancement-Mode with Fast Intrinsic Diode T jm = 150°C >- New V DSS max. V P ' d 25 Tc = 25°C A DS(on) Tc = 25°C Q typ. C rss typ. max. ° 9 typ. PF pF rts nC C iss p thJC PD max. K/W W 7 >- IXFN 200N06 60 200 0.0055

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

8n80

Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
Contextual Info: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1

C1146

Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)

52N30

Abstract: 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50
Contextual Info: HiPerFET Power MOSFETs LowGa>°-c,ar rypes- - s » F series - Avalanche ruggedness with Fast Intrinsic Diode p > Type *D(25 c r38 typ. V max. typ. max. max. fi PF PF ns nC K/W W E T jm = 150"C ► New V Tc = 25°C 76 0.011 4400 1200 100 240 0.42 360 70