28N30 Search Results

Contextual Info: ÖIXYS HiPerFAST IGBT IXGH 28N30B IXGT 28N30B 300 56 2.1 55 V CES ^C25 V CE sat typ t fi(typ) V A V ns Preliminary data sheet Maximum Ratings Symbol Test Conditions V CES Tj = 25°C to 150°C 300 V VCGR Tj = 25°C to 150°C; RGE = 1 M£i 300 V v GES Continuous

28N30

Contextual Info: r i T v v < v HiPerFAST IGBT VCES IXGH 28N30 IXGT 28N30 ^C25 V CE sat typ ^fi(typ) 300 V 56 A 1.6 V 180 ns Preliminary data sheet Maximum Ratings Symbol Test C onditions V CES T j = 25°C to 150°C 300 V V CGR T j = 25°C to 150°C; RGE = 1 MQ 300 V v GES

Contextual Info: HiPerFASTTM IGBT IXGH 28N30B IXGT 28N30B VCES IC25 VCE sat typ tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 56 A IC90

7N60B

Abstract: 65A3 40N60A 60N60 IXGA 12N60C 200n60 ixgh 1500 30N30 IXG IGBT ixgh
Contextual Info: Insulated Gate Bipolar Transistors IGBT G series (high gain, high speed) v CE{Mt) Type T „ = 25°C A = 150°C New t jm > > IXGH 28N30 > 56 60 60_ IXGH 30N30 > IXGH 4QN30 > IXGH 31N60 IXGH IXGH IXGH > IXGN IXGN > IX G A 12N100 IXGH 12N100 IXGP 12N100 28

28N30

Contextual Info: HiPerFASTTM IGBT IXGH 28N30 IXGT 28N30 VCES IC25 VCE sat typ tfi(typ) = 300 V = 56 A = 1.6 V = 180 ns Preliminary data Symbol Test Conditions VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES Continuous ±20 V VGEM Transient

28N30B

Contextual Info: DIXYS IXGH 28N30B IXGT 28N30B HIPerFAST IGBT VCES ^C25 V CE sat typ trfi(typ,i /K • Symbol ~ 300 56 2.1 55 V A V ns TO-247 AD Test Conditions : 25° C to 150=C V CES v OCR T, V Continuous =2 5 ° C to 150°C; R . 1 MO (TAB) Transient T c = 2 5 °C ^C90

28N30

Contextual Info: ÖIXYS HiPerFAST IGBT IXGH 28N30 IXGT 28N30 V CES ^C2 V C E s a t ty p t fi(typ) 300 V 56 A 1.6 V 180 ns P re lim in a ry d ata sheet Symbol Test Conditions TO-247 AD T, = 25° C to 150° C 300 V T.J = 25° C to 150° C: RG „t = 1 MQ 300 V Continuous

28n30a

Contextual Info: niXYS HIPerFAST“ IGBT IXGH 28N30A IXGT 28N30A CES ^C25 V CE sat typ t fi(typ) 300 56 1.85 120 V A V ns P re lim in a ry data sh ee t i f Maximum Ratings Symbol Test Conditions V CES T, =25°C to 150°C 300 V Tj = 25° C to 150° C; RGE= 1 M£i 300 V V GES

752 smd

Contextual Info: HiPerFASTTM IGBT IXGH 28N30A IXGT 28N30A VCES = = IC25 VCE sat typ = tfi(typ) = 300 56 1.85 120 V A V ns Preliminary data TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES

28N30

Contextual Info: HiPerFASTTM IGBT IXGH 28N30 IXGT 28N30 VCES IC25 VCE sat typ tfi(typ) = = = = 300 V 56 A 1.6 V 180 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 300 V VGES Continuous

120n60b

Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B
Contextual Info: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *

Contextual Info: H flHVwÎ Y A- Y ^JL sIk»!? HiPerFAST IGBT IXGH 28N30B IXGT 28N30B V CES 300 56 2.1 55 ^C25 V CE sat typ t'fi(typ) V A V ns Preliminary data sheet Maximum Ratings Symbol Test Conditions V CES T j = 25°C to 150°C 300 V V CGR T j = 25°C to 150°C; RGE = 1 MQ

Contextual Info: HiPerFASTTM IGBT IXGH 28N30A IXGT 28N30A VCES = IC25 = VCE sat typ = = tfi(typ) 300 56 1.85 120 V A V ns Preliminary data TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES

12n60c

Abstract: 60n60 igbt 20N30 diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60
Contextual Info: HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE sat 600 1000 TO-220 IC VCE(sat) (IXGP) TC = max 25 °C TC=25 °C A V PLUS247 (IXGX) 1.6 1.8 60 1.6 1.8 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 31N60 75 ¬ 1.6 75 ¬ 1.6 ä ä ä IXGH 20N30 IXGH 28N30 TO-268 ISOPLUS247TM

Contextual Info: HiPerFASTTM IGBT IXGH 28N30 IXGT 28N30 VCES IC25 VCE sat typ tfi(typ) = 300 V = 56 A = 1.6 V = 180 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES Continuous ±20 V

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Contextual Info: HiPerFASTTM IGBT IXGH 28N30B IXGT 28N30B VCES IC25 VCE sat typ tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 56 A IC90

HM5118165J6

Contextual Info: HM5118165 Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-636B Z Rev. 2.0 Nov. 26,1996 Description The Hitachi HM5118165 is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced 0.5 |im CMOS technology for high performance and low power. The H M 5118165 offers

ajw smd

Abstract: SMD ajw
Contextual Info: □ IXYS PRELIMINARY DATA SHEET 28N30 28N30S HiPerFAST IGBT Symbol Test C onditions V CES Td = 25°C to 150°C V CGR « M aximum Ratings 300 V Td = 25°C to 150°C; RGE = 1 M£i 300 V V GES Continuous ±20 V v Transient ±30 V GEM ^C25 Tc = 25°C

Contextual Info: OIXYS PRELIMINARY DATA SHEET 28N30A 28N30AS HiPerFAST IGBT \ CES IC25 * CE sat typ. W) Symbol Test Conditions VCES ^ = 25°C to 150°C 300 V VCGR ^ = 25°C to 150°C; RGE = 1 MO 300 V v GES Continuous ±20 V VœM Transient ±30 V *C25 Tc = 25° C

200n60

Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Contextual Info: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40

7n60b

Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3

SMD ajw

Abstract: ajw smd ajw 35
Contextual Info: □ IXYS PRELIM IN ARY DATA SHEET 28N30A 28N30AS HiPerFAST IGBT Symbol Test Conditions V CES Td = 25°C to 150°C V CGR « Maximum Ratings 300 V Td = 25°C to 150°C; RGE = 1 M£i 300 V V GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C

Contextual Info: OIXYS PRELIMINARY DATA SHEET 28N30 28N30S HiPerFAST IGBT vCES ^C25 v* CE sat typ ^fi(typ) Symbol Test Conditions v CES ^ = 25°C to 150°C 300 V VCGR ^ = 25°C to 150°C; RGE = 1 MO 300 V VGES Continuous ±20 V VœM Transient ±30 V Tc = 25° C

Contextual Info: O IX Y S PRELIMINARY DATA SHEET 28N30B 28N30BS HiPerFAST IGBT vCES ^C25 vCE sat typ *fl(typ) Symbol Test Conditions V CES T j = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MO 300 V v GES Continuous ±20 V VœM Transient ±30 V Tc = 25° C