Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    29 TRANSISTOR Search Results

    29 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    29 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Q62702-C2136

    Abstract: Q62702-C2137
    Text: NPN Silicon Darlington Transistors BCP 29 BCP 49 For general AF applications ● High collector current ● High current gain ● Complementary types: BCP 28/48 PNP ● Type Marking Ordering Code (tape and reel) BCP 29 BCP 49 BCP 29 BCP 49 Q62702-C2136 Q62702-C2137


    Original     		PDF Q62702-C2136 Q62702-C2137 OT-223 Q62702-C2136 Q62702-C2137

    993 395 pnp npn

    Abstract: bc237 smd sot23 package transistor TO-92 bc108 TRANSISTOR BC337 SMD 702 TRANSISTOR smd SOT23 2PB601AQ BC548 TRANSISTOR SMD bc548 TO-92 Bd135 smd 2PC945Q
    Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page General purpose amplification and switching transistors Low-power transistors 2 5 – 23 26 Transistor arrays 7 – 29 29 29 Medium-power transistors 8 9 – 30 31 10


    Original     		PDF BRY61 BRY62 OT143B 993 395 pnp npn bc237 smd sot23 package transistor TO-92 bc108 TRANSISTOR BC337 SMD 702 TRANSISTOR smd SOT23 2PB601AQ BC548 TRANSISTOR SMD bc548 TO-92 Bd135 smd 2PC945Q

    XC3S400-4PQ208C

    Abstract: XC3S500 XC3S400-4PQ208 XCN08011 XC3S1000-4FT256C 3S400 L02P UG130 RAMB16 L28n
    Text: PRODUCT NOT RECOMMENDED FOR NEW DESIGNS 1 Spartan-3 FPGA Family Data Sheet DS099 October 29, 2012 Module 1: Introduction and Ordering Information DS099 v3.0 October 29, 2012 Product Specification Module 4: Pinout Descriptions DS099 (v3.0) October 29, 2012


    Original     		PDF DS099 DS099 XC3S400-4PQ208C XC3S500 XC3S400-4PQ208 XCN08011 XC3S1000-4FT256C 3S400 L02P UG130 RAMB16 L28n

    xc3s500e vq100

    Abstract: m1l43 XC3S250E TQ144 STARTER KIT BOARD XC3S500EVQ100 Xilinx Parallel Cable IV spartan-3 XC3S500E-VQ100 SPARTAN 3e 1600e XC3S250E vqg100 XC3S500E FGG320
    Text: PRODUCT NOT RECOMMENDED FOR NEW DESIGNS 1 Spartan-3E FPGA Family Data Sheet DS312 October 29, 2012 Product Specification Module 1: Introduction and Ordering Information Module 3: DC and Switching Characteristics DS312 4.0 October 29, 2012 DS312 (4.0) October 29, 2012


    Original     		PDF DS312 DS312 xc3s500e vq100 m1l43 XC3S250E TQ144 STARTER KIT BOARD XC3S500EVQ100 Xilinx Parallel Cable IV spartan-3 XC3S500E-VQ100 SPARTAN 3e 1600e XC3S250E vqg100 XC3S500E FGG320

    P621 1k

    Abstract: UL1557 HCPL4504 AC200V AC2500 P610 P621 6MBP75RTJ060 p621 b transistor p621
    Text: SPECIFICATION Device Name : IGBT - IPM Type Name : 6MBP75RTJ060 Spec. No. : MS6M 0673 Fuji Electric Co.,Ltd. Matsumoto Factory Jan. 29 ‘03 N.Matsuda Jan. 29 ‘03 Nishiura Jan.-29 -‘03 K.Yamada T.Fujihira MS6M 0673 a 1 22 H04-004-07 Revised Records Date


    Original     		PDF 6MBP75RTJ060 H04-004-07 H04-004-06 H04-004-03 P621 1k UL1557 HCPL4504 AC200V AC2500 P610 P621 6MBP75RTJ060 p621 b transistor p621

    P621

    Abstract: P621 1k AC200V AC2500 HCPL4504 P610 all transistor P621 6MBP50
    Text: SPECIFICATION Device Name : IGBT - IPM Type Name : 6MBP50RTJ060 Spec. No. : MS6M 0671 Fuji Electric Co.,Ltd. Matsumoto Factory Jan. 29 ‘03 N.Matsuda Jan. 29 ‘03 Nishiura Jan.-29 -‘03 K.Yamada T.Fujihira MS6M 0671 a 1 22 H04-004-07 Revised Records Date


    Original     		PDF 6MBP50RTJ060 H04-004-07 H04-004-06 H04-004-03 P621 P621 1k AC200V AC2500 HCPL4504 P610 all transistor P621 6MBP50

    6MBP150RTJ060

    Abstract: AC200V AC2500 HCPL4504 P610 P621 6mbp150 all transistor P621 P621 ic
    Text: SPECIFICATION Device Name : IGBT - IPM Type Name : 6MBP150RTJ060 Spec. No. : MS6M 0677 Fuji Electric Co.,Ltd. Matsumoto Factory Jan. 29 ‘03 N.Matsuda Jan. 29 ‘03 Nishiura Jan.-29 -‘03 K.Yamada T.Fujihira MS6M 0677 a 1 22 H04-004-07 Revised Records Date


    Original     		PDF 6MBP150RTJ060 H04-004-07 H04-004-06 H04-004-03 6MBP150RTJ060 AC200V AC2500 HCPL4504 P610 P621 6mbp150 all transistor P621 P621 ic

    P621

    Abstract: IC P621 p621 b 18 p621 P621 capacitor 6MBP100RTJ060 AC200V AC2500 HCPL4504 P610
    Text: SPECIFICATION Device Name : IGBT - IPM Type Name : 6MBP100RTJ060 Spec. No. : MS6M 0675 Fuji Electric Co.,Ltd. Matsumoto Factory Jan. 29 ‘0 3 N.Matsuda Jan. 29 ‘0 3 Nishiura Jan.-29 -‘0 3 K.Yamada T.Fujihira MS6M 0675 a 1 22 H04-004-07 Revised Records


    Original     		PDF 6MBP100RTJ060 H04-004-07 H04-004-06 H04-004-03 P621 IC P621 p621 b 18 p621 P621 capacitor 6MBP100RTJ060 AC200V AC2500 HCPL4504 P610

    LD-15713-1

    Abstract: LQ150X1LGN2A THC63LVDM83R BLOCK DIAGRAM FOR LPG GAS DETECTION LD-15713A BHSR-02VS-1 DF14-2628SCFA KTBE24MSTF Stanley 1050 circuit diagram fluorescent lamp transistor Electronic ballast
    Text: PRODUCT SPECIFICATIONS AVC Liquid Crystal Displays Group LQ150X1LGN2A TFT-LCD Module Spec. Issue Date: Oct. 29, 2003 No: LD-15713A RECORDS OF REVISION LQ150X1LGN2A SPEC No. DATE No. LD-15713 Jul. 29. 2003 LD-15713A Oct. 29. 2003 SUMMARY REVISED NOTE PAGE 1st Issue


    Original     		PDF LQ150X1LGN2A LD-15713A LD-15713 3000Vrms 2200Vrms LD-15713-1 LQ150X1LGN2A THC63LVDM83R BLOCK DIAGRAM FOR LPG GAS DETECTION LD-15713A BHSR-02VS-1 DF14-2628SCFA KTBE24MSTF Stanley 1050 circuit diagram fluorescent lamp transistor Electronic ballast

    P621

    Abstract: 431w transistor P621 capacitor 431W p621 b 6MBP150RTJ060 AC200V AC2500 HCPL4504 P610
    Text: SPECIFICATION Device Name : IGBT - IPM Type Name : 6MBP150RTJ060 Spec. No. : MS6M 0677 Fuji Electric Co.,Ltd. Matsumoto Factory Jan.29 ‘ 03 N.Matsuda Jan.29 ‘ 03 Nishiura Jan. 29‘ 03 K.Yamada T.Fujihira MS6M 0677 a 1 22 H04-004-07 Revised Records Date


    Original     		PDF 6MBP150RTJ060 H04-004-07 H04-004-06 H04-004-03 P621 431w transistor P621 capacitor 431W p621 b 6MBP150RTJ060 AC200V AC2500 HCPL4504 P610

    XQ2VP40-5FG676N

    Abstract: XQ2VP405FF1152N XQ2VP40-5FF1152 XQ2VP40-5FF1152N 5ff11 p624 wireless encrypt BLVDS-25
    Text: 1 R DS136 v1.0 November 29, 2006 QPro Virtex-II Pro 1.5V Military Temp Platform FPGAs Complete Data Sheet Preliminary Product Specification Module 1: Introduction and Overview Module 3: DC and Switching Characteristics DS136-1 (v1.0) November 29, 2006 DS136-3 (v1.0) November 29, 2006


    Original     		PDF DS136 DS136-1 DS136-3 FF1704 DS136-4 XQ2VP40-5FG676N XQ2VP405FF1152N XQ2VP40-5FF1152 XQ2VP40-5FF1152N 5ff11 p624 wireless encrypt BLVDS-25

    BFP720F

    Abstract: BFP720FESD C166 JESD22-A114 NF50 BFP720 Germanium Transistor spice gummel
    Text: BFP720FESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.1, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP720FESD BFP720FESD: BFP720F BFP720FESD C166 JESD22-A114 NF50 BFP720 Germanium Transistor spice gummel

    VCO 9GHZ 10GHZ

    Abstract: RF TRANSISTOR 10GHZ C166 JESD22-A114 NF50 Germanium Transistor
    Text: BFP720ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP720ESD OT343 OT343-PO OT343-FP BFP720ESD: OT323-TP VCO 9GHZ 10GHZ RF TRANSISTOR 10GHZ C166 JESD22-A114 NF50 Germanium Transistor

    BFP640ESD

    Abstract: RF TRANSISTOR 10GHZ C166 JESD22-A114 NF50 Germanium Transistor
    Text: BFP640ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP640ESD OT343 OT343-PO OT343-FP BFP640ESD: OT323-TP BFP640ESD RF TRANSISTOR 10GHZ C166 JESD22-A114 NF50 Germanium Transistor

    Untitled

    Abstract: No abstract text available
    Text: BFP720FESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.1, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP720FESD BFP720FESD:

    gummel poon model parameter HBT

    Abstract: 726-BFP640FESDH6327 Germanium Transistor
    Text: BFP640FESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.1, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP640FESD BFP640FESD: 726-BFP640FESDH6327 640FESD H6327 gummel poon model parameter HBT Germanium Transistor

    RF TRANSISTOR 10GHZ

    Abstract: BFP740ESD NXP Bluetooth IC C166 JESD22-A114 NF50 vxWORKS Germanium Transistor gummel transistor RF S-parameters
    Text: BFP740ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP740ESD OT343 OT343-PO OT343-FP BFP740ESD: OT323-TP RF TRANSISTOR 10GHZ BFP740ESD NXP Bluetooth IC C166 JESD22-A114 NF50 vxWORKS Germanium Transistor gummel transistor RF S-parameters

    BFP740FESD

    Abstract: gummel poon model parameter HBT C166 JESD22-A114 NF50 2.4ghz lnb Germanium Transistor transistor RF S-parameters infineon RF
    Text: BFP740FESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.1, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP740FESD BFP740FESD: BFP740FESD gummel poon model parameter HBT C166 JESD22-A114 NF50 2.4ghz lnb Germanium Transistor transistor RF S-parameters infineon RF

    Untitled

    Abstract: No abstract text available
    Text: BFP640FESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.1, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP640FESD BFP640FESD:

    XPOSYS

    Abstract: gummel poon model parameter HBT X-GOLD colossus diodes transistor marking k2 dual Trimble Germanium Transistor agilent ads SENSONOR 2.4ghz lnb
    Text: BFP640ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP640ESD OT343 OT343-PO OT343-FP BFP640ESD: OT323-TP 726-BFP640ESDE6327 640ESD E6327 XPOSYS gummel poon model parameter HBT X-GOLD colossus diodes transistor marking k2 dual Trimble Germanium Transistor agilent ads SENSONOR 2.4ghz lnb

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon Darlington Transistors • • • • BCP 29 BCP 49 For general AF applications High collector current High current gain Complementary types: BCP 28/48 PNP Type Marking Ordering Code (tape and reel) BCP 29 BCP 49 BCP 29 BCP 49 Q62702-C2136


    OCR Scan     		PDF Q62702-C2136 Q62702-C2137 OT-223 CHP00252

    c1237

    Abstract: siemens CIB C1236
    Text: NPN Silicon Darlington Transistors • • • • BCP 29; BCP 49 For general AF applications High collector current High current gain C om plem entary types: BCP 28/48 PNP Type M a rk in g O rd e rin g c o d e (1 2 -m m ta p e ) P acka ge * BCP 29 BCP 29


    OCR Scan     		PDF C1236 C1237 OT-223 OT-223 BCP49 siemens CIB

    2929 transistor

    Abstract: MMBTA63 MMBTA64 t2929
    Text: SAMSUNG SEMICONDUCTOR D | 7^4,4142 0007300 3 | INC MMBTA64 PNP EPITAXIAL SILICON TRANSISTOR T-29-29 DARLINGTON TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current


    OCR Scan     		PDF MMBTA64 T-29-29 MMBTA63 OT-23 100fjA 100mA 100mA, 2929 transistor t2929

    2929 transistor

    Abstract: MMBT6427 MMBTA14 SOT-23 J
    Text: SAMSUNG SEMICONDUCTOR INC MMBTA14 14E D | 7^4142 OGt^eT! t | NPN EPITAXIAL SILICON TRANSISTOR T-29-29 DARLINGTON AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage . Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF 0075T1 MMBTA14 MMBT6427 T-29-29 OT-23 100jjA, 2929 transistor SOT-23 J