2904A Search Results

2222 NPN

Abstract: 2222a NPN 2n h 2222a 2222a 2221A npn 2907A 2N708 2N709 2N753 2369A
Contextual Info: JEDEC TRANSISTORS 2N 706 2N 706A 2N708 2N709 2N 709A 2N 722 2N 743 2N 744 2N753 2N 834 2N 834A 2N 869A 2N 914 2N 995 2N 2205 2N 2218 2N 2218A 2N 2219 2N 2219A 2N 2221 2N 2221A 2N 2222 2N 2222A 2N 2368 2N 2369 2N 2369A 2N 2475 2N 2894 2N 2904 2N 2904A 2N 2905

D2T2904

Abstract: itt 2n2905 D2T2904A
Contextual Info: TYPES D2T2904, 2904A, D2T2905, D2T2905A DUAL P-N-P SILICON TRANSISTORS B U L L E T IN N O . D L -S 7311971, M A R C H 1973 TWO G E N E R A L PU RPO SE T R A N S IS T O R S IN O N E P A C K A G E • Each Triode Electrically Similar to 2N2904, 2N 2904A,

2905a

Abstract: ic 2905a 2904a 2906A 2907A A1290 2N2904A 2n 2905a
Contextual Info: 2N 2904A 2N 2905A 2N 2906A SILICON PLANAR PNP ai2907‘ G E N E R A L PURPOSE A M P LIF IE R S A N D SWITCHES The 2N 2904A, 2N 290EÎA, 2N 2906A and 2N 2907A are silicon planar epitaxial PNP tran­ sistors in Jedec T O - 39 for 2N 2904A and 2N 2905A and in Jedec TO -18 (for 2N 2906A

2905a

Abstract: ic 2905a 2904a 2907A 2907 a12907 2N2907A 2808a 2904 2906A
Contextual Info: 2N 2904A 2N 2905A 2N 2906A SILICON PLANAR PNP a' 2” 7* GENERAL PURPOSE AM PLIFIERS AND SWITCHES The 2N 2904A, 2N 2905A, 2N 2906A and 2N 2907A are silicon planar epitaxial PN P tran­ sistors in Jedec T O - 39 for 2N 2904A and 2N 2905A and in Jedec T O -18 (for 2N 2906A

2N 2222 A NPN, TO-18

Abstract: 2N2222 2n h 2222a 2222a NPN 706a 709a 2N708 2N709 2N753 2222 NPN
Contextual Info: à a.UJ >° 0Hi >U aLU £ oc 2N 706 2N 706A 2N708 2N709 2N 709A 2N 722 2N 743 2N 744 2N753 2N 834 2N 834A 2N 869A 2N 914 2N 995 2N 2205 2N 2218 2N 2218A 2N 2219 2N 2219A 2N 2221 2N 2221A 2N 2222 2N 2222A 2N 2368 2N 2369 2N 2369A 2N 2475 2N 2894 2N 2904 2N 2904A

2n h 2222a

Abstract: transistor 2222a to-92 transistor 2222a transistor 2n 2222 2n 2222A to-92 npn mml 600 pnp 2n 2222 transistor 2N917 33T4
Contextual Info: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 32E D • 23033=14 0000012 5 ■ PROFESSIONAL GRADE APPLICATIONS " VCEO VCBO VEBO Volts Volts Volts min min min Device hFE at bias min/max IC VCE ICM PTA mA Volts mA mW max max PTC W max Cob ts NF ICBO VCE sat fT

transistor vergleichsliste

Abstract: Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR vergleichsliste transistor BC-148 rft transistoren Transistoren DDR
Contextual Info: TRANSISTOR VERGLEICHSLISTE Teil 2: Siliziumtransistoren r a d io - t e le v is io n Transistorverglèich& liste T eil 2 : S iliziu in tra n sistoren TRA N SISTO R, V ER G LEICH S LIS T E Teil 2: Siliziumtransistoren DER D EU TSCH EN M IL IT Ä R V E R L A G

2904Y

Abstract: k403 2904AY
Contextual Info: LM2904, 2904A Low-power dual operational amplifier Datasheet - production data • Wide bandwidth unity gain : 1.1 MHz (temperature compensated)  Very low supply current/amplifier, essentially independent of supply voltage  Low input bias current: 20 nA (temperature

BEL 100N TRANSISTOR

Abstract: BEL100N bel 100n transistor npn BEL 100N 2n 2222a transistor BEL100 TRANSISTOR bd 657 BF200 transistor transistor BF 245 bd115
Contextual Info: BHARAT EL EK /S E n i C O N D S Device No VC EO Volts min VcBO Volts mm DI 47E D V ebo VoHs min hFE at bias mm /max Ic mA 14353Tfl V ce V o lts 1 CM mA max P lo t mW max □□□□012 ICBO uA typ flTG • V ce Sat V o lts typ ÍT MHz typ BELI Cob pF typ

Contextual Info: LM2904ĆQ1 DUAL OPERATIONAL AMPLIFIER SLOS414E − MAY 2003 − REVISED JUNE 2004 D Qualification in Accordance With D D D D D D D Low Input Bias and Offset Parameters: AEC-Q100† Qualified for Automotive Applications Customer-Specific Configuration Control

2N1711 MOTOROLA

Abstract: DH3467CD equivalent 2N2219 2N2219A BSX45 bsy38 BSY39 SP3725 SP2222AF bsx46 equivalent SP2484F
Contextual Info: Transistors Cont. Discrete Devices Space Saving Devices Electrical Characteristics @ 25° C Maxim um Ratings Ambient P q Type Polarity One Both Side Sides mW mW VCE<Sat) @ Ic / lß H f e ic Vcb Volts VCE Volts VEB Volts Min/Max mA Volts m A/m A Frequency

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

BEL100N

Abstract: bel 100n transistor 41 bf BEL100 BEL100N TRANSISTOR transistor BF 245 BEL 167 transistor BEL 100N BEL BF200 BF200 transistor
Contextual Info: Si Device No VCEO Volts mm V cB O Volts mm V ebo Volts mm hFE at bias mm /max Ic mA V ce Volts 1 CM Plot ICBO mA mW uA max max typ V ce Sat Volts typ M Hz Cob Pt- typ typ ÍT ts N ns typ dB typ toff nsec — f Package NPN SWITCHING TRANSISTORS 20. 2N2218

Contextual Info: RN2901AFS~RN2906AFS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Transistor with Built-in Bias Resistor) RN2901AFS, RN2902AFS, RN2903AFS 2904AFS, RN2905AFS, RN2906AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

lr 2905 transistor

Abstract: lr 2905 z LR 2905 md2904 ic 2904 MD2905
Contextual Info: M O T O R O L A SC -CXSTRS/R F> 6367254 MOTOROLA D E | t , 3 b 7 E S 4 0 D A B 4 4 3 0 |" SC XSTRS/R F 9 6D 8 2 4 4 3 _ T M A X IM U M RATINGS Sym bol M D 2 9 0 4 ,F M D 29Q 5,F M Q 29 0 4 C ollec to r-E m itter V o lta g e VCEO 40 C ollector-B ase V o ltag e

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

axial zener diodes marking code c3v6

Abstract: H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode
Contextual Info: SESCOSEM Introduction Sescosem, Societe Europeenne de Semiconducteurs et de Microelectronique, is a branch of the Thomson-CSF Group, one of the world’s largest High Technology combines which includes Ducati Microfaro, LCC-CICE, COFELEC and many other companies.

BF195 equivalent

Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
Contextual Info: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i­ co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

2904Q1

Contextual Info: LM2904ĆQ1 DUAL OPERATIONAL AMPLIFIER SLOS414F − MAY 2003 − REVISED APRIL 2008 D Qualified for Automotive Applications D ESD Protection Exceeds 500 V Per D D D D D Open-Loop Differential Voltage D MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model C = 200 pF, R = 0

2904V

Contextual Info: LM2904ĆQ1 DUAL OPERATIONAL AMPLIFIER SLOS414E − MAY 2003 − REVISED JUNE 2004 D Qualification in Accordance With D D D D D D D Low Input Bias and Offset Parameters: AEC-Q100† Qualified for Automotive Applications Customer-Specific Configuration Control

Contextual Info: LM2904ĆQ1 DUAL OPERATIONAL AMPLIFIER SLOS414D − MAY 2003 − REVISED MARCH 2004 D Qualification in Accordance With D D D D D D D Low Input Bias and Offset Parameters: AEC-Q100† Qualified for Automotive Applications Customer-Specific Configuration Control