29F FLASH Search Results

VLGA 64GB

Abstract: 29f2g08 32G nand flash nand flash 128g MICRON 1.8V 2GB NAND 128GB Nand flash Micron MLC temperature micron 1G SPI NAND flash Micron NAND Flash MLC Die 100Ball
Contextual Info: Next-Generation NAND Flash Part Numbering System Micron's part numbering system is available at www.micron.com/numbering Next-Generation NAND Flash* MT 29F 2G 08 A A A A A WP - xx xx x ES : A Micron Technology Design Revision shrink Single-Supply Flash 29F = NAND Flash

29F400BT

Abstract: FT29F400BT-70TA-S FT29F400BB
Contextual Info: FT29F400BT-70TA-S FT29F400BB-70SA-S 4 Mbit 512KX8 or 2456KX16,Boot Block Single Supply Flash Memory ! SINGLE 5V+/-10% SUPPLY VOLTAGE for PROGRAM, ERASE & READ OPERATIONS ACCESS TIME 70ns ! PROGRAMMING TIME-8uS/Byte/Word Typ. ! ! -S ! TA ! -70 BT 400 29F FT

am29f016b-75

Abstract: 29f016b
Contextual Info: AM D 3 A m 29F 016B 16 Megabit 2 M x 8-Btt CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology

Am29F010 Rev. A

Contextual Info: AMDZ1 A m 29F 010A 1 Megabit 128 K x 8-blt CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ Embedded Algorithms — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirements

Contextual Info: Advance Information C A T 29F 150 1.5 Megabit CMOS 5V Only Sector Flash Memory FEATURES 100,000 Program/Erase Cycles and 10 Year Data Retention • Fast Read Access Time: 90/120/150 ns ■ Sectored Architecture: End of Write Detection — One 16-KB Boot Sector

MT 29F 64G

Abstract: 48-pin TSOP I Micron MLC temperature MICRON NAND sLC MT 29F 2G 08 A B A E A WP xx xx x ES E Micron NAND Flash MLC Micron 1GB NAND FLASH MICRON NAND MLC 256gb nand flash MT29H
Contextual Info: Standard NAND Flash Part Numbering System Micron's part numbering system is available at Standard NAND Flash* MT 29F 2G 08 A A A Micron Technology WP - xx xx xx xx ES : A Design Revision shrink A = 1st design revision

Micron NAND Flash MLC Die

Abstract: MT 29F 64G MICRON 1.8V 2GB NAND MT 29F 2G 08 A B A E A WP xx xx x ES E TSOP 48 stacked die package 32G nand flash 1Gb SLC 48-pin TSOP I uLGA 16gb
Contextual Info: Standard NAND Flash Part Numbering System Micron's part numbering system is available at www.micron.com/numbering Standard NAND Flash* MT 29F 2G 08 A A A Micron Technology WP - xx xx xx xx ES : A Design Revision shrink A = 1st design revision Single-Supply Flash

Contextual Info: PRELIMINARY- a Advanced Micro Devices A m 29F 016 16-Megabit 2,097,152 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 Volt ± 10% for read and write operations ■ Embedded Program A lgorithm s — Automatically programs and verifies data at

Contextual Info: FLASH MEMORY CMOS 8 M 1 M x 8 /512 K x 16 BIT M B M 29 F8OOT-90-12/M B M 29F 800B-90-12 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs

Contextual Info: H igh p erfo rm an ce 512Kx8/256Kxl6 5V CMOS Flash EEPROM U A S 29F 400 A 512Kx8/256Kx 16 CMOS Flash EEPROM Preliminary information Features • O r g a n iz a tio n : 5 1 2 K X 8 o r 2 5 6 K X 1 6 • L o w p o w e r c o n s u m p t io n • S e c to r a r c h it e c tu r e

29F200AB

Abstract: 29f200at 29F200A da1048 29F200
Contextual Info: PRELIMINARY AMDB Am 29 F 200 AT/Am 29F 200 AB 2 M e g a b i t 2 6 2, 14 4 x 8 - B i t /1 3 1 ,0 7 2 x 16-Bit C M O S 5.0 Volt-only, S e c t o r E r a s e Flash M e m o r y DISTINCTIVE C HA R A C TER ISTIC S • 5.0 V ± 1 0 % for read and wri te o p e r a t i o n s

29F080

Contextual Info: High p erform an ce lM x 8 5V CMOS Flash EEPROM •■ II II A S 29F080 I \ f c j j a h i i x 8 CMOS Flash E P R O M Preliminary information Features • Organization: 1MX8 • Sector architecture • Low power consumption - 3 0 mA m axim um read current - SO mA m axim um program current

FLASH MEMORY 29F

Abstract: 29f200ta 200ta FLASH 29F 29f200ba MBM29F200BA
Contextual Info: M B M29F200TA-90-X-1 2-x/M B M29 F200BA -90 X/' 12-X FEATURES • Single 5.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts

FLASH MEMORY 29F

Abstract: IC 7107 Pin diagram 29f flash 29F 128 16 S29F010 TMS29F010JL4
Contextual Info: TMS29F010 1 048 576-BIT FLASH/BLOCK ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY SMJS01OA • Organization 128K x 8 or 4 Blocks of AUGUST 1990 — REVISED DECEMBER 1990 N and J P ackages Top View • HVCMOS Technology NC [ , A16f 2 A15[ 3 • All Inputs/Outputs TTL Compatible

Contextual Info: Preliminary information •■ AS29F080 II 5V 1Mx 8 CMOS Flash EEPROM Features • O rganization: 1M x 8 • Sector architecture - Sixteen 64K byte sectors - Equal sector architecture - Erase any com bination o f sectors or full chip • Single 5.0± 0.5V po w er supply for re a d /w rite operations

Contextual Info: High Performance 512KX8 / 2 5 6 KX16 5V CMOS Flash EEPROM •■ | | AS29F400 II 5 Ï2 K X 8 /2 5 6 K X 1 6 CMOS Flash EEPROM Preliminary information Features • O rg a n iza tio n : 5 1 2 K X 8 o r 2 5 6 K x l 6 • L o w p o w e r c o n s u m p tio n

intel 29F

Abstract: T7164 28F Intel LV6416 4c4007 5B810 32kxS 62832 dram cross reference T5C2568
Contextual Info: A Fast SRAM cross reference Vendor Cypress Hitachi Code ASCCode Description Code ASC Code CY 7C 185 A S7C 164 81x8 M C M 6264C AS7C164 8Kx8 CY 7C 199 A 57C 256 32K x8 M C M 6206D A S7C2S6 32K x8 C Y 7 C J3 9 9 A S7C 32S6 3 2 K * 8 3V M CM 62V06D A S7C 3256

Contextual Info: Hi'^li P i'rfo rm a iK c •■ A S 2 lM;0 2 A 2S6K X 8 SV ( ’MC)S l lasli lil F R O M 2 S6 K x 8 C M O S llii.sli HI.PROM Preliminary information Features • Organization: 2S6Kx8 • Sector architecture • L o w p o w e r c o n s u m p tio n - 4 0 m A m a x im u m re a d c u rre n t

Contextual Info: H igh perform an ce 512K X 8 5 V CMOS Flash EEPROM n A S29F040 II. II W llh . 5 1 2 K x 8 CM O S Flash EEPROM Preliminary information Features • Low pow er consum ption • Organization: 512K X 8 • Sector architecture • • • • - 3 0 m A m ax im u m read current

programmer for 29F010

Abstract: 29F010 29F010-12 29F010-15 29F010-10 TMS29F010 29F010-120 TMS29F010JL4 VEFH 29F010_120
Contextual Info: TMS29F010 1 048 576-BIT FLASH/BLOCK ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY SM JS010A — A U G U S T 1990 — REVISED DECEM BER 1990 • Organization 128K 32K x 8 Each x 8 or 4 Blocks of N and J Packages Top View NC • Single 5-V Power Supply

Am29f

Contextual Info: I/VHITE /M IC R O E L E C T R O N IC S m 512Kx32 5V FLASH S IM M WPF512K32-90PSC5 P R E L IM IN A R Y * FEATURES • A ccess Tim e o f 90ns ■ Organized as 5 1 2Kx32 ■ Packaging: ■ C om m e rcial T e m p era ture Range • 8 0-pin S IM M ■ 5 V o lt Program m ing. 5V ± 10% Supply.

29F200

Abstract: HY29F200T
Contextual Info: mV *• Y II M n A I ■ l i ■■ ■■ » 1 ■ HY29F200T/B Series 2 Megabit 5.0 volt-only Sector Erase Flash Memory KEYFEATURES • 5.0 V 1 10% Read, Program, and Erase • - Minimizes system-level power requirements • - RY//BY output pin for detection of

27SF256

Abstract: 29f100 27SF 29LV 28SF
Contextual Info: PROFESSIONAL PROGRAMMER SERIES The new Batronix Professional Programmer Series offers an exceptionally flexible, simple to use and extremely fast set of programming devices that support a broad range of chips including Eproms, EEproms, Flash, serial EEproms and other storage chips.

ym 238

Abstract: hy 214 29F002
Contextual Info: H ig h P e rfo rm a n ce « 256K X 8 AS29F002 II 5V CMOS Flash EEPROM 2 M egabit 5V CMOS Flash FEPROM Preliminary information Features • O r g a n iz a tio n : 2 5 6 K x 8 • L o w p o w e r c o n s u m p tio n • S e c to r a r c h ite c tu r e - 35 m A m a x im u m read current