2N3799 Search Results

BCY72 MOTOROLA

Abstract: 2N4405 N4026 BC178 BC179 transistor 2N4033 2N2906 2N2906A N3963 2N3799
Contextual Info: METAL SMALL-SIGNAL TRANSISTORS continued General-Purpose Amplifiers (continued) Package v (BR)CEO Volts Min fT MHz Min 2 N 3963 2N4026 2N4029 2N3799 2N2906A# 2N2907Af 2N3964 BC177 80 80 80 60 60 60 45 45 BCY79 @ i •c lc mA mA Max Min 40 100 150 30 200

2N3799 MOTOROLA

Abstract: 2N3799
Contextual Info: 2N3799 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N3799 Availability Online Store

2N3799

Contextual Info: 2N3799* MAXIM UM RATINGS Characteristic Symbol Max Unit C o lle c to r -E m itte r V o lta g e VCEO -6 0 V dc C o lle c to r-B a s e V o lta g e VCBO -6 0 Vdc E m itte r-B a s e V o lta g e vebo -5 .0 V dc 'c -5 0 m Adc = 25X PD 0.36 2.06 W a tt m W X T o ta l D e vice D is s ip a tio n :<t T q = 2 5'C

transistor 2N3907

Abstract: t018 transistor 2N39Q4 2N3904D 2N3904DCSM 2N3906CSM T071 DUAL TRANSISTOR "Dual PNP Transistor"
Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeNo 2N3790X 2N3791 2N3791 CECC 2N3791-SM 2N3792 2N3792 CECC 2N3792-SM 2N3792LP CECC 2N3799 2N3799X 2N3800 2N3800DCSM 2N3801 2N3801DCSM 2N3802 2N3802DCSM 2N3803 2N3803DCSM 2N3804 2N3804DCSM 2N3805 2N3805A

TO-18 amps pnp transistor

Abstract: BC107 BC108
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-18 PACKAGE DEVICE TYPE V ceo sus VOLTS (max) AMPS TO-18 T0206AA 2N2906 2N2906AA 2N2907 2N2907AA 2N3250AA 2N3251AA 2N3496 2N3497 2N3798 2N3799 2N3962 2N3963 2N3964 2N3965 2N4026 2N4027 2N4028 2N4029

2n3810

Abstract: 2N3799 2N3811 2N2605 2N3789 2N3798 2n3810 datasheet 2C2605 2N2604
Contextual Info: Data Sheet No. 2C2605 Generic Packaged Parts: Chip Type 2C2605 Geometry 0220 Polarity NPN 2N2604, 2N2605, 2N3798, 2N3799, 2N3810, 2N3811 Chip type 2C2605 by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for high

2N3798

Abstract: 2N3799
Contextual Info: Datasheet ^ ^ ^^ ^ _ ^^ • tm 2N3798 2N3799 WSem G iconductor I I I i II 1 Corp. PNP SILICON TRANSISTOR 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-18 CASE M anufacturers of W orld C lass Discrete S em iconductors

TRANSISTOR 3kw

Abstract: 2N3799
Contextual Info: SEME 2N3799 LAB MECHANICAL DATA Dimensions in mm inches PNP, LOW NOISE AMPLIFIER TRANSISTOR 5.84 (0.230) 5.31 (0.209) 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. FEATURES • SILICON PLANAR EPITAXIAL PNP

2N3799

Contextual Info: 2N3799 SILICON AMPLIFIER TRANSISTORS • High Current Gain • High Frequency M AXIMUM RATINGS R A T IN G S Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current — Continuous Total Power Dissipation @ Tc = 25UC Derate above 25°C

2N4250

Abstract: 2N5133 2N4249 2N4288 2N4291 to 106 2n5133 2N4248 2N3901 2N3707 2N3708
Contextual Info: TYPE NO. 2N3721 2N3798 2N3799 2N3843 2N3843A 2N3844 N N N N N N P P N N CASE MAXIM UM RATINGS Pd ImW 'c V CEO mA) (V ) TO-92B TO-92B TO-92B TO-92B TO-92B 360 360 360 360 360 200 200 200 200 200 30 30 30 30 30 TO-92B TO-18 TO-18 TO-92B TO-92B 200 360 360

cv8616

Abstract: BC107-108-109 2N2905 MOTOROLA 2N2906 JANTX 2N2904 transistor 2N2904A 2N4033 motorola 2n4033 2N2222A JAN 2N2222A JANTXV
Contextual Info: METAL SMALL-SIGNAL TRANSISTORS continued General-Purpose Amplifiers (continued) Package v (BR)CEO Volts Min fT MHz Min 2 N3963 2N4026 2N4029 2N3799 2N2906A# 2N2907Af 2N3964 BC177 80 80 80 60 60 60 45 45 BCY79 @ i •c lc mA mA Max Min 40 100 150 30 200 200

2N3799X

Abstract: LE17
Contextual Info: SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N3799X • Low Noise • Hermetic TO-18 Metal package. • Ideally suited for Low Level Amplifier. Instrumentation Amplifiers and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

1001a transistor

Contextual Info: SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N3799X • Low Noise • Hermetic TO-18 Metal package. • Ideally suited for Low Level Amplifier. Instrumentation Amplifiers and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

Contextual Info: 2N3799 Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)50m Absolute Max. Power Diss. (W)360m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175þ I(CBO) Max. (A).01uØ @V(CBO) (V) (Test Condition)

Contextual Info: S EM E 2N3799 LA B MECHANICAL DATA Dimensions in mm inches PNP, LOW NOISE AMPLIFIER TRANSISTOR 5.84 (0.230) 5.31 (0.209) 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. FEATURES • SILICON PLANAR EPITAXIAL PNP

Contextual Info: SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N3799X • Low Noise • Hermetic TO-18 Metal package. • Ideally suited for Low Level Amplifier. Instrumentation Amplifiers and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

2N3799

Contextual Info: 2N3799* M A XIM U M RATINGS Characteristic Symbol Max Unit v CEO -6 0 Vdc Collector-B ase Voltage v CBO -6 0 Vdc E m itter-Base V o ltage v EBO - 5 .0 Vdc 'c -5 0 m A dc PD 0.36 2.06 W att mW/°C ?d 1.2 6.86 W atts m W rc T j' Tgtg - 65 to + 200 °C C o lle cto r-E m itte r V o ltage

TRANSISTOR 3kw

Abstract: 2N3799X
Contextual Info: SEME 2N3799X LAB MECHANICAL DATA Dimensions in mm inches PNP, LOW NOISE AMPLIFIER TRANSISTOR 5.84 (0.230) 5.31 (0.209) 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. FEATURES • SILICON PLANAR EPITAXIAL PNP

2N2605

Abstract: 2N3799 CMPT5086 CMPT5087 CP588 PN4250A
Contextual Info: PROCESS CP588 Small Signal Transistor PNP - Low Noise Amplifier Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 15 x 15 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 4.0 x 4.0 MILS Emitter Bonding Pad Area 5.5 x 5.5 MILS Top Side Metalization

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

603 transistor npn

Abstract: 2N3906 DS transistor BC 312 603 transistor npn dj bipolar BC transistor BC847C di PN 2n2222A 2n3904 2n3906
Contextual Info: ALLEGRO MICROSYSTEMS INC bbE D • 0504330 000b515 4bS ■ ALGR BIPOLAR TRANSISTORS ELECTRICAL CHARACTERISTICS at T = + 25°C A ^CBO 'c Max. V BH CBO V (BR)CEO V(BR)EBO Max. <mA) (V) (V) (V) (nA) ^CEO @ V CB Max. @ v CE (V) (nA) (V) Device Allegro Type Type

tpq2907

Contextual Info: ALLEGRO MICROSYSTEMS INC 8 5 1 4 0 1 9 S P R A GU E. T3 D • 05G433Ô GGD3ÔD7 3 ■ ALGR S E M I C O N D S / ICS 93 D 0 3 8 0 7 3 SE R IE S TPQ QUAD TRANSISTOR ARRAYS SERIES TPQ QUAD TRANSISTOR ARRAYS O P R A G U E SERIES TPQ quad transistor arrays ^ are general-purpose silicon tran sisto r arrays

Contextual Info: Small Signal Transistors TO-18 Case Continued TYPE NO. DESCRIPTION (V) (V) (V) (l*A) MIN MIN MIN MAX *ICES "IC E V @ lc hFE BVCBO BVCEO b v e b o ICBO @ VCBO (mA) (V) MIN e VCE VCE(SAT) @ 1C Cob (V) MAX (V) (mA) MAX (pF) fT NF ton (MHZ) (dB) (ns) MAX MIN

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157