Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2N5307 Search Results

    SF Impression Pixel

    2N5307 Price and Stock

    onsemi 2N5307

    TRANS NPN DARL 40V 1.2A TO92-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2N5307 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    ME 2N5307

    TRANSISTOR,BJT,DARLINGTON,NPN,40V V(BR)CEO,300MA I(C),TO-98
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N5307 752
    • 1 $0.28
    • 10 $0.28
    • 100 $0.126
    • 1000 $0.084
    • 10000 $0.084
    		Buy Now

    Vishay Sprague 2N5307

    TRANSISTOR,BJT,DARLINGTON,NPN,40V V(BR)CEO,300MA I(C),TO-98
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N5307 622
    • 1 $1.25
    • 10 $1.25
    • 100 $0.625
    • 1000 $0.5
    • 10000 $0.5
    		Buy Now

    2N5307 Datasheets (27)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5307 Fairchild Semiconductor NPN Darlington Transistor Original PDF
    2N5307 Fairchild Semiconductor NPN Darlington Transistor Original PDF
    2N5307 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    2N5307 Central Semiconductor SMALL SIGNAL DARLINGTON TRANSISTORS (EPOXY) Scan PDF
    2N5307 Fairchild Semiconductor NPN Darlington Transistor Scan PDF
    2N5307 General Electric Semiconductor Data Handbook 1977 Scan PDF
    2N5307 General Electric Semiconductor Data Book 1971 Scan PDF
    2N5307 General Electric Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. Scan PDF
    2N5307 Micro Electronics NPN DARLINGTON AMPLIFIER Scan PDF
    2N5307 Micro Electronics Semiconductor Device Data Book Scan PDF
    2N5307 Micro Electronics Semiconductor Devices Scan PDF
    2N5307 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5307 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N5307 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5307 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5307 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5307 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5307 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5307 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5307 National Semiconductor NPN Transistors / DARLINGTON Scan PDF

    2N5307 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n5307

    Abstract: MPSA14 OF transistor 2n5307
    Text: 2N5307 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF 2N5307 MPSA14 2n5307 OF transistor 2n5307

    2N5307

    Abstract: CBVK741B019 F63TNR MPSA14 PN2222N
    Text: 2N5307 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF 2N5307 MPSA14 2N5307 CBVK741B019 F63TNR PN2222N

    LM390

    Abstract: No abstract text available
    Text: 2N5307 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N5307 Availability Online Store


    Original     		PDF 2N5307 2N5307 STV3208 LM3909N LM390

    LM390

    Abstract: No abstract text available
    Text: 2N5307 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N5307 Availability Online Store


    Original     		PDF 2N5307 2N5307 2N53x. STV3208 LM3909N LM390

    Untitled

    Abstract: No abstract text available
    Text: Small Signal Darlington Transistors Part No. 2N5306 2N5307 2N5308 MPSA12 MPSA13 MPSA14 2N6427 MPSA62 MPSA63 MPSA64 MPSA65 20070515 Polarity NPN PNP VCEO hFE @ VCE & IC IC V (A) 20 30 30 40 20 30 30 30 0.5 0.5 0.5 0.5 0.5 0.5 0.5 Min. Max. 7K 2K 7K 20K 20K


    Original     		PDF 2N5306 2N5307 2N5308 MPSA12 MPSA13 MPSA14 2N6427 MPSA62 MPSA63 MPSA64

    NPN Transistor TO92 40V 200mA

    Abstract: 2n5307 MPSA14
    Text: 2N5307 2N5307 NPN General Purpose Amplifier • This device designed for applications requiring extremely high current gain at currents to 1.0A. • Sourced from Process 05. • See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor


    Original     		PDF 2N5307 MPSA14 NPN Transistor TO92 40V 200mA 2n5307

    Untitled

    Abstract: No abstract text available
    Text: 2N5307 2N5307 NPN General Purpose Amplifier • This device designed for applications requiring extremely high current gain at currents to 1.0A. • Sourced from Process 05. • See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor


    Original     		PDF 2N5307 MPSA14

    Untitled

    Abstract: No abstract text available
    Text: TELEPHONE: 973 378-2002 (212) 227-8008 FAX (973) 3784080 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 USA Silicon Transistors 2N5307,8,8A TO-92 PIN absolute m a x i m u m ratings: (25°C) (unless otherwise specified) Voltage* Collector to Base Collector to Emitter


    Original     		PDF 2N5307 2N5307 2N5308,

    2N5306 NATIONAL SEMICONDUCTOR

    Abstract: NSDU45 darlington transistor MPSw45 D40C2 D40K1 NSDU45A
    Text: This NPN Transistors v EBO V Min Ic e s ' 'CBO a (jiA) Max Its Case Style 2N5305 TO-92 (94) 0.1 2N5306 TO-92 (94) 2N5307 *c @ VCE (mA) (V) VCE(SAT) VBE(SAT) . (V) & (V) 0 C Max Min Max ( ) fT (MHz) C0b (pF) Max Min @ lc (mA) Process No. 25 2000 20,000 2


    OCR Scan     		PDF D0370b0 2N5306 NATIONAL SEMICONDUCTOR NSDU45 darlington transistor MPSw45 D40C2 D40K1 NSDU45A

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR ¡m 2N5307 NPN Darlington Transistor T his device is designed for applications requiring extrem ely high cu rre n t gain at cu rre n ts to 1.0 A. S ourced from Process 05. See M PSA14 for characteristics. AbSOlUtG Maximum RâtinÇjS Symbol T A = 2 5°C unless o th e rw ise noted


    OCR Scan     		PDF 2N5307 PSA14

    GES5307

    Abstract: 2n5307 2N5308 2N5308A GES5308 GES5308A
    Text: ~q £ SOLID STATE 01 DE 1 3fl750âl 0017^51 S | 3875081 G E SOLID STATE 01E 17951 D Signal Transistors 2N5307, 8, 8A, GES5307, 8, 8A -p z i Silicon Darlington Transistors TO-92 TO-98 The GE/RCA 2N5307, 08, 08A and GES5307, 8, and 8A are planar, epitaxial, passivated NPN silicon Darlington transis­


    OCR Scan     		PDF 2N5307, GES5307, 2N5307 GES5307 92CS-42626 10-Typical 92CS-42A29 2N5308 2N5308A GES5308 GES5308A

    2N5307

    Abstract: MPSA14
    Text: S S E f v l l G O f s l O L J C î T Q R ;:m 2N5307 NPN Darlington Transistor This device is designed for applications requiring extrem ely high cu rre n t gain at currents to 1.0 A. S ourced from Process 05. See M PSA14 for characteristics. Absolute Màximum RStinQS


    OCR Scan     		PDF 2N5307 MPSA14 2N5307

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR • 2N5307 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings TA = 25°C unless otherwise noted


    OCR Scan     		PDF 2N5307 MPSA14

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    c 337 25

    Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
    Text: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3


    OCR Scan     		PDF

    2N5309

    Abstract: 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (S A T ) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN


    OCR Scan     		PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 012ySC 2N5309 2N5305 2N5306

    2N4256

    Abstract: 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306 "to-98" package
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE M in.-M ax. @ IC, V C E (V> (V) Max. T ypical (MHz) Cc b @ 10V 1 MHz T ypical (Pf) @ 25° C (mW) fT V C E (S A T) l c . *B PT 2N 4256 2N 4424 2N4425 NPN


    OCR Scan     		PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 2N5365 2N5305 2N5306 "to-98" package

    NPN Transistor TO92 5V 200mA

    Abstract: 2N3877A GES5307 GES6220 D38L1-3 GES5305 GES5306 GES5306A GES5308 GES5308A
    Text: SILICON SIGNAL DARLINGTON TRANSISTORS TO-92 PACKAGE Device Type bv ceo V Min.-Max. GES5305 GES5306 GES5306A GES5307 GES5308 GES5308A D38L1-3 D39C1-3 D39C4-6 NPN NPN NPN NPN NPN NPN NPN PNP PNP 25 25 25 40 40 40 40 40 25 2K-20K /K-70K 7K-70K. 2K-20K 7K-70K


    OCR Scan     		PDF GES5305 2K-20K 200mA, 200MA GES5306 /K-70K GES5306A 7K-70K. NPN Transistor TO92 5V 200mA 2N3877A GES5307 GES6220 D38L1-3 GES5308 GES5308A

    D39C4

    Abstract: 2N5174-2N5176 2N5175 GES6220 D38L1-3 GES5305 GES5306 GES5306A GES5307 GES5308
    Text: SILICON SIG N A L D AR L I N G T O N TR ANS IS TO RS TO-92 PACKAGE Device Type bv ceo V Min.-Max. GES5305 GES5306 GES5306A GES5307 GES5308 GES5308A D38L1-3 D39C1-3 D39C4-6 NPN NPN NPN NPN NPN NPN NPN PNP PNP 25 25 25 40 40 40 40 40 25 2K-20K /K-70K 7K-70K.


    OCR Scan     		PDF GES5305 2K-20K 200mA, 200MA GES5306 /K-70K GES5306A 7K-70K. D39C4 2N5174-2N5176 2N5175 GES6220 D38L1-3 GES5307 GES5308

    mhb 7001

    Abstract: PJ 1269 D39C4 GES6220 GES5822 GES5823 GES5824 GES5825 GES5826 GES5827
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device 'F E bvceo Type @10mA V Min. 1 I I • m Max. @ lc(mA) GES5822 NPhl 60 GES5823 a a 60 GES5824 40 GES5825 I 40 GES5826 40 00 00 60 00 «0 200 200 120 200 300 GES5827 GES5828 GES6000


    OCR Scan     		PDF GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 mhb 7001 PJ 1269 D39C4 GES6220

    2N5306 equivalent

    Abstract: ATI 200M D39C4 GES6220 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (SA T ) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN


    OCR Scan     		PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 100Hz) 2N5306 equivalent ATI 200M D39C4 GES6220

    D40C2

    Abstract: No abstract text available
    Text: CENTRAL SEMICONDUCTOR fc,l D | nfl'HbB 4 1~3 T"29“29 SMALL SIGNAL DARLINGTON TRANSISTORS EPOXY lc ^ ^ O O m A TYPE NO. OPERATING AND STORAGE TEMPERATURE -6 5 °to + 1 5 0 °C Jc VCEO Amps Volts 2N5305 0.3 25 2N5306 0.3 2N 5306A Pd (Max) hFE @ 1C TA=25°C


    OCR Scan     		PDF 2N5305 2N5306 2N5307 2N5308 GES5305 S5306 GES5306A GES5307 GES5308 GES5308A D40C2

    2N2926 equivalent

    Abstract: beta transistor 2N2222 2N3392 equivalent 2N3416 equivalent 2n3393 equivalent 2N3900A 2N3394 equivalent 2N3859A equivalent to PNP 1N4532 2N5232A equivalent
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


    OCR Scan     		PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N2926 equivalent beta transistor 2N2222 2N3392 equivalent 2N3416 equivalent 2n3393 equivalent 2N3900A 2N3394 equivalent 2N3859A equivalent to PNP 1N4532 2N5232A equivalent

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF