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Microchip Technology Inc 2N5881 TRANS NPN 60V 15A
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DigiKey	2N5881	Bulk			100	1 - 10 - 100 $40.8003 1000 $40.8003 10000 $40.8003	Buy Now
Avnet Americas	2N5881	Bulk		36 Weeks	100	1 $43.94 10 $43.94 100 $40.8 1000 $39.24 10000 $39.24	Buy Now
Mouser Electronics	2N5881					1 - 10 - 100 $43.94 1000 $43.94 10000 $43.94	Get Quote
Newark	2N5881	Bulk			100	1 - 10 - 100 $40.8 1000 $39.24 10000 $39.24	Buy Now
Microchip Technology Inc	2N5881				1	1 $43.94 10 $43.94 100 $43.94 1000 $43.94 10000 $43.94	Buy Now

Onlinecomponents.com	2N5881					1 - 10 - 100 $38.95 1000 $38.95 10000 $38.95	Buy Now
NAC	2N5881	Tray			7	1 $44.83 10 $44.83 100 $41.29 1000 $38.27 10000 $38.27	Buy Now
Master Electronics	2N5881					1 - 10 - 100 $38.95 1000 $38.95 10000 $38.95	Buy Now
Motorola Semiconductor Products 2N5881
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Bristol Electronics	2N5881		73			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	2N5881		254			1 $84 10 $84 100 $65.1 1000 $63 10000 $63	Buy Now
	2N5881		19			1 $9 10 $4.5 100 $4.5 1000 $4.5 10000 $4.5	Buy Now
	2N5881		6			1 $3.6 10 $2.4 100 $2.4 1000 $2.4 10000 $2.4	Buy Now
	2N5881		4			1 $13.65 10 $13.65 100 $13.65 1000 $13.65 10000 $13.65	Buy Now
ES Components	2N5881		131			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Motorola Mobility LLC 2N5881
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	2N5881		24		1	1 $6.72 10 $4.368 100 $3.36 1000 $3.36 10000 $3.36	Buy Now
GTCAP 2N5881 TRANSISTOR,BJT,NPN,60V V(BR)CEO,15A I(C),TO-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2N5881		159			1 $3.6 10 $3.6 100 $2.4 1000 $2.22 10000 $2.22	Buy Now
Texas Instruments 2N5881 TRANSISTOR,BJT,NPN,60V V(BR)CEO,15A I(C),TO-3
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Quest Components	2N5881		5			1 $3.6 10 $2.4 100 $2.4 1000 $2.4 10000 $2.4	Buy Now

2N5881 Datasheets (31)

Part	Manufacturer	Description	Datasheet Type	PDF
2N5881	Semelab	Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=160	Original	PDF
2N5881	Advanced Semiconductor	Silicon Transistor Selection Guide	Scan	PDF
2N5881	API Electronics	15 AMPS / 20 AMPS NPN Transistors	Scan	PDF
2N5881	API Electronics	Short form transistor data	Short Form	PDF
2N5881	API Electronics	Short form transistor data	Short Form	PDF
2N5881	Boca Semiconductor	COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=160	Scan	PDF
2N5881	Central Semiconductor	Complementary Silicon Power Transistors, TO-3	Scan	PDF
2N5881	Diode Transistor	Transistor Short Form Data	Scan	PDF
2N5881	Fairchild Semiconductor	Full Line Condensed Catalogue 1977	Scan	PDF
2N5881	General Transistor	Power Transistor Selection Guide	Scan	PDF
2N5881	Mospec	POWER TRANSISTORS(15A,160W) - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=160	Scan	PDF
2N5881	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
2N5881	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N5881	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF

2N5881	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
2N5881	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N5881	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N5881	Unknown	Cross Reference Datasheet	Scan	PDF
2N5881	Unknown	Transistor Replacements	Scan	PDF
2N5881	Unknown	Transistor Replacements	Scan	PDF

2N5881 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2N5881 Abstract: 2N5882 2N5879 2N5880 Text: Inchange Semiconductor Product Specification 2N5881 2N5882 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Complement to type 2N5879 2N5880 APPLICATIONS ・For general-purpose power amplifier and switching applications	Original	PDF	2N5881 2N5882 2N5879 2N5880 2N5881 2N5882 2N5880
2N5881 Abstract: No abstract text available Text: 2N5881 60 V - Complementary NPN Selicon High-power Transistor 4.25. 1 of 2 Home Part Number: 2N5881 Online Store 2N5881 Diodes 6 0 V - C o m plem ent ary NPN Selic o n High- po w er Trans is to r Transistors	Original	PDF	2N5881 com/2n5881 2N5881
2N5881 Abstract: No abstract text available Text: 2N5881 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	PDF	2N5881 O204AA) 16-Jul-02 2N5881
Untitled Abstract: No abstract text available Text: 2N5881 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	PDF	2N5881 O204AA) 18-Jun-02
2N5882 Abstract: 2N5881 2N5879 2N5880 Text: SavantIC Semiconductor Product Specification 2N5881 2N5882 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·Complement to type 2N5879 2N5880 APPLICATIONS ·For general-purpose power amplifier and switching applications	Original	PDF	2N5881 2N5882 2N5879 2N5880 2N5881 2N5882 2N5880
2N5879 Abstract: 2N5880 2n5879 pin out 2N5880 motorola NPN bipolar junction transistors max hfe 2000 2N5882 2n5882 motorola 2n5879 power amplifier circuit 2N5879 MOTOROLA 1N5825 Text: MOTOROLA Order this document by 2N5879/D SEMICONDUCTOR TECHNICAL DATA PNP 2N5879 2N5880* Complementary Silicon High-Power Transistors NPN 2N5881 2N5882* . . . designed for general–purpose power amplifier and switching applications. • Collector–Emitter Sustaining Voltage —	Original	PDF	2N5879/D 2N5879 2N5880* 2N5881 2N5882* 2N5879, 2N5880, 2N5882 2N5879/D* 2N5879 2N5880 2n5879 pin out 2N5880 motorola NPN bipolar junction transistors max hfe 2000 2N5882 2n5882 motorola 2n5879 power amplifier circuit 2N5879 MOTOROLA 1N5825
Untitled Abstract: No abstract text available Text: 2N5881 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)15 Absolute Max. Power Diss. (W)160# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)4.0 @I(C) (A) (Test Condition)15	Original	PDF	2N5881 time700n
2N5879 Abstract: 2N5880 2N5881 2N5882 Text: SavantIC Semiconductor Product Specification 2N5879 2N5880 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·Complement to type 2N5881 2N5882 APPLICATIONS ·For general-purpose power amplifier and switching applications	Original	PDF	2N5879 2N5880 2N5881 2N5882 2N5879 2N5880 2N5882
2N5879 Abstract: 2N5880 2N5882 2N5881 Text: Inchange Semiconductor Product Specification 2N5879 2N5880 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Complement to type 2N5881 2N5882 APPLICATIONS ・For general-purpose power amplifier and switching applications	Original	PDF	2N5879 2N5880 2N5881 2N5882 2N5879 2N5880 2N5882
2N5881 Abstract: 2N5882 2N5879 2N5880 Text: Product Specification www.jmnic.com 2N5881 2N5882 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector-emitter saturation voltage ・Complement to type 2N5879 2N5880 APPLICATIONS ・For general-purpose power amplifier and switching applications	Original	PDF	2N5881 2N5882 2N5879 2N5880 2N5881 2N5882 2N5880
MJE34 equivalent Abstract: BU108 2SA1046 2n5882 BDX54 2N5880 BC 107 npn transistor pin configuration 2SB56 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N5879 2N5880* Complementary Silicon High-Power Transistors NPN 2N5881 2N5882* . . . designed for general–purpose power amplifier and switching applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 60 Vdc (Min) — 2N5879, 2N5881	Original	PDF	2N5879, 2N5881 2N5880, 2N5882 2N5879 2N5880* 2N5882* TIP73B TIP74 MJE34 equivalent BU108 2SA1046 2n5882 BDX54 2N5880 BC 107 npn transistor pin configuration 2SB56 BU326 BU100
2N5881 Abstract: 15A100 Text: 2N5881 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	PDF	2N5881 O204AA) 31-Jul-02 2N5881 15A100
Untitled Abstract: No abstract text available Text: mI m J E L E C T R O N IC S , INC. \|-17 COLLECTOR CURRENT = 15 AMPS NPN TYPES VCEO sus Volts v CBO Volts 2N3055 JA N 2N3055 JT X 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 TO -3 TO -3 100	OCR Scan	PDF	2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412
2N5881 Abstract: 2N5882 2NS882 Text: tz.li S O L I T R O N D E V I C E S INC DE 1fl3t,flbDa 0 0 0 1 3 S 1 5 1 ~ 2N5881 2N5882 8368602 SOLITRON D EVICES t' « INC . v * UPU SILICON POWER TRANSISTORS HIGH POWER 15 AMPERES FEATURES: EPI-BA SE CONSTRUCTION F A S T SWITCHING HIGH R E L IA B IL IT Y	OCR Scan	PDF	2N5881 2N5882 2N5881 100KHZ 2N5882 2NS882

Jan2N3055 Abstract: No abstract text available Text: Ú j i l ELECTRO N ICS, IN C . COLLECTOR CURRENT = VCEO sus Volts Device No Cáse VCBO Volts Ve BO Volts 2N3055 JAN 2N3055 JTX 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 TO-3 TO-3 100 100	OCR Scan	PDF	2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 Jan2N3055
1501-33 Abstract: 2N5686 2N5860 2N5745 45020 2N5301 2N5303 2N5880 2N5881 2N5882 Text: Typ#* PNP Compls- VCEUSIM lc mont Voltt) M u 2N5881 2N5882 2NS879 2NS880 2N5301 2NS302 2N5303 2N5885 2N5886 2N6326 2N6327 2N632B MJ802 MJ3771 MJ3772 2N4398 2N4399 2N5745 2N5883 2N5884 2H6329 2N6330 2N6331 2N5685 2N5686 MJ14000 MJ14002 2N5683 2N5684 MJ14001	OCR Scan	PDF	Tc-25Â 2N5881 2N5882 2NS879 2N5880 2N5301 2NS302 2N5303 2N5885 2N5886 1501-33 2N5686 2N5860 2N5745 45020
2N5880 Abstract: 2N5882 2N5879 2N5881 Scans-00155740 Text: COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS General-Purpose Power Amplifier and Switching Applications FEATURES: NPN 2N5881 2N5882 PNP 2N5879 2N5880 _ Boca Semiconductor Corp. BSC http ://www.bocasemi.com * Low Collector-Emitter Saturation Voltage v c e \| s a t = 1-0V Max.)@lc=7.0A	OCR Scan	PDF	2N5879 2N5881 2N5880 2N5882 2N5881 2N5882 Scans-00155740
2N5879 Abstract: 2N5880 2N5882 2N5881 complimentary 400 w Text: Datasheet Central 2N5879 2N5881 Sem iconductor Corp. 2N5880 2N5882 PNP NPN COMPLIMENTARY SILICON POWER TRANSISTORS 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-3 CASE Manufacturers of World Class Discrete Semiconductors	OCR Scan	PDF	2N5879 2N5880 2N5881 2N5882 2N5879, 200mA 100kHz 2N5879 complimentary 400 w
terminals of 2n3055 Abstract: 2n3055 2N4211 2N3238 2N3239 TO111 package 2N3667 2N3236 2N3240 2N5882 Text: mI m J E L E C T R O N IC S , INC. \|-17 COLLECTOR CURRENT = 15 AMPS NPN TYPES VCEO sus Volts v CBO Volts 2N3055 JA N 2N3055 JT X 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 TO -3 TO -3 100	OCR Scan	PDF	2N3055 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 terminals of 2n3055 2N4211 TO111 package 2N5882
2N5882 Abstract: N5 npn transistor 2N5880 2N5879 Text: MOTOROLA Order this document by 2N5879/D SEMICONDUCTOR TECHNICAL DATA PNP 2 N 58 79 Com plem entary Silicon H igh-Pow er Transistors 2N 5880* NPN . . . designed for general-purpose power amplifier and switching applications. • • • • 2N5881 C ollector-Em itter Sustaining Voltage —	OCR Scan	PDF	2N5879/D 2N5879, 2N5881 2N5880, 2N5882 2N5881 O-204AA N5 npn transistor 2N5880 2N5879
2NS880 Abstract: 2N6878 2N5880 2n5879 power amplifier circuit 2N5879 2N5882 2n5881 2N5880 motorola Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N 5879 Com plem entary Silicon High-Pow er TVansistors 2N 5880* NPN . . . designed for general-purpose power amplifier and switching applications. 2N5881 • Collector-Emitter Sustaining Voltage — VCEO sus - 60 Vdc (Min) — 2N5879,2N5881	OCR Scan	PDF	2N5879 2N5881 2N5880 2N5882 2N6878 2N5881 2NS880 2N5B82 2n5879 power amplifier circuit 2N5882 2N5880 motorola
2N5880 Abstract: 2N5882 2N5879 2N5881 S200 TRANSISTOR TC 100 Text: 2N5879, 2N5880 PNP I 2N5881, 2N5882 NPN ELECTRICAL CHARACTERISTICS Tc = 25°C unless otherwise noted Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) ( lc = 200 mA, lB = 0 ) 2N5879, 2N5881 2N5880, 2N5882	OCR Scan	PDF	2N5879, 2N5880 2N5881, 2N5882 2N5881 2N5880, 2N5882 2N5881 2N5879 S200 TRANSISTOR TC 100
Untitled Abstract: No abstract text available Text: Ìl S U ELECTR O NICS, IN C . 17 COLLECTOR CURRENT = 15 AMPS NPN TYPES v CBO VCEO sus Volts Volts Device No Case 2N3055 JAN 2N3055 JT X 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 T O -3	OCR Scan	PDF	2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412
2N5881 Abstract: 2n5882 Text: TYPES 2N5881, 2N5882 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS • 160 Watts at 2 5 °C Case Temperature • 15-A Rated Continuous Collector Current • Min f r of 4 MHz at 10 V , 1 A • 90-mJ Reverse Energy Rating TYPES 2N5881, 2N5882 BULLETIN NO. DL-S 7111625, DECEMBER	OCR Scan	PDF	2N5881, 2N5882 2N5880 90-mJ 2NS881 2N5881

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2N5881 Price and Stock

Microchip Technology Inc 2N5881

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Motorola Mobility LLC 2N5881

GTCAP 2N5881

Texas Instruments 2N5881

2N5881 Datasheets (31)

2N5881 Datasheets Context Search

2N5881

2N5881

2N5881

Untitled

2N5882

2N5879

Untitled

2N5879

2N5879

2N5881

MJE34 equivalent

2N5881

Untitled

2N5881

Jan2N3055

1501-33

2N5880

2N5879

terminals of 2n3055

2N5882

2NS880

2N5880

Untitled

2N5881