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    2N6296 Search Results

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    2N6296 Price and Stock

    Microchip Technology Inc 2N6296

    PNP TRANSISTOR
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    Microchip Technology Inc 2N6296 1
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    Onlinecomponents.com 2N6296
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    Master Electronics 2N6296
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    Central Semiconductor Corp 2N6296

    Complementary Silicon Darlington Power Transistor 60V 4A 2-Pin TO-66 (Alt: 2N6296)
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    Central Semiconductor Corp 2N6296 PBFREE

    Transistor Darlington PNP 60V 4A 3-Pin TO-220AB Sleeve (Alt: 2N6296 PBFREE)
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    Central Semiconductor Corp 2N6296 TIN/LEAD

    Transistor Darlington PNP 60V 4A 3-Pin TO-220AB Sleeve (Alt: 2N6296 TIN/LEAD)
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    NES 2N6296

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    Bristol Electronics 2N6296 12
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    2N6296 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6296 Central Semiconductor Power Transistors Original PDF
    2N6296 Semelab Bipolar PNP Device in a Hermetically Sealed TO66 Metal Package - Pol=PNP / Pkg=TO66 / Vceo=60 / Ic=4 / Hfe=750/18k / fT(Hz)=4M / Pwr(W)=50 Original PDF
    2N6296 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N6296 Motorola European Master Selection Guide 1986 Scan PDF
    2N6296 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N6296 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6296 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N6296 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6296 Unknown Transistor Replacements Scan PDF
    2N6296 Unknown Transistor Replacements Scan PDF
    2N6296 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6296 Unknown Silicon PNP-darlington-tranistor+diode Scan PDF
    2N6296 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6296 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N6296 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6296 New England Semiconductor TRANS DARLINGTON PNP 60V 4A 2TO-66 - Pol=PNP / Pkg=TO66 / Vceo=60 / Ic=4 / Hfe=750/18k / fT(Hz)=4M / Pwr(W)=50 Scan PDF
    2N6296 New England Semiconductor Darlington Complementary Silicon Power Transistor Scan PDF

    2N6296 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6294

    Abstract: 2N6296 2N6295
    Text: Product Specification www.jmnic.com 2N6294 2N6295 Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・DARLINGTON ・Complement to type 2N6296/6297 APPLICATIONS ・For high gain amplifier and medium speed switching applications PINNING See Fig.2


    Original
    PDF 2N6294 2N6295 2N6296/6297 2N6294 2N6296 2N6295

    2N6296

    Abstract: 2N6297 2N6298
    Text: SavantIC Semiconductor Product Specification 2N6296 2N6297 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·DARLINGTON ·Complement to type 2N6294/6295 APPLICATIONS ·For high gain amplifier and medium speed switching applications PINNING See Fig.2


    Original
    PDF 2N6296 2N6297 2N6294/6295 2N6296 2N6298 2N6297 2N6298

    2N6296

    Abstract: No abstract text available
    Text: 2N6296 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a


    Original
    PDF 2N6296 O213AA) 1-Aug-02 2N6296

    2N6296

    Abstract: 2N6297 2N6294 2N6298
    Text: Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6296 2N6297 DESCRIPTION ・With TO-66 package ・DARLINGTON ・Complement to type 2N6294/6295 APPLICATIONS ・For high gain amplifier and medium speed switching applications PINNING See Fig.2


    Original
    PDF 2N6296 2N6297 2N6294/6295 2N6296 2N6298 2N6297 2N6294 2N6298

    Darlington 40A

    Abstract: 2N6297 2N6294
    Text: 2N6294 2N6295 2N6296 2N6297 NPN PNP w w w. c e n t r a l s e m i . c o m COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6294, 2N6296 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base


    Original
    PDF 2N6294 2N6295 2N6296 2N6297 2N6294, 2N6297 Darlington 40A

    Untitled

    Abstract: No abstract text available
    Text: 2N6294 2N6295 2N6296 2N6297 NPN PNP COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6294, 2N6296 series devices are complementary silicon Darlington power transistors, manufactured by the epitaxial base


    Original
    PDF 2N6294 2N6295 2N6296 2N6297 2N6294, 2N6296 100kHz

    2N6294

    Abstract: 2N6295 2N6296
    Text: SavantIC Semiconductor Product Specification 2N6294 2N6295 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·DARLINGTON ·Complement to type 2N6296/6297 APPLICATIONS ·For high gain amplifier and medium speed switching applications PINNING See Fig.2


    Original
    PDF 2N6294 2N6295 2N6296/6297 2N6294 2N6295 2N6296

    2N6294

    Abstract: 2N6295 V8060
    Text: Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6294 2N6295 DESCRIPTION ・With TO-66 package ・DARLINGTON ・Complement to type 2N6296/6297 APPLICATIONS ・For high gain amplifier and medium speed switching applications PINNING See Fig.2


    Original
    PDF 2N6294 2N6295 2N6296/6297 2N6294 2N6295 V8060

    Untitled

    Abstract: No abstract text available
    Text: 2N6296 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a


    Original
    PDF 2N6296 O213AA) 30-Jul-02

    2N6297

    Abstract: 2N6296 2N6298
    Text: Product Specification www.jmnic.com 2N6296 2N6297 Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・DARLINGTON ・Complement to type 2N6294/6295 APPLICATIONS ・For high gain amplifier and medium speed switching applications PINNING See Fig.2


    Original
    PDF 2N6296 2N6297 2N6294/6295 2N6296 2N6298 2N6297 2N6298

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


    Original
    PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417

    BD149

    Abstract: 2N6297 Motorola LM3661TL-1.40 2SD526-0 2SB5960 Motorola 2N6297 MJE2481 MJE2483 2SD5260 idb596
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V PD (BR)CEO Max hFE »T Of) ON) Mln (Hz) ICBO t0N r Max Max (A) (8) Max (Ohms) (CE)sat Tp.r Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . -5 -10 . -15 .20 . .25


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    PDF MJE800T 2N6296 MJE2481 MJE2483 2N3054A 2SD1092 2SD777 2SB604 2SD570 BD149 2N6297 Motorola LM3661TL-1.40 2SD526-0 2SB5960 Motorola 2N6297 2SD5260 idb596

    2N3738 equivalent

    Abstract: 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420
    Text: Power Transistors TO-66 Case TYPE NO. NPN 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 PNP 2N6049 2N6420 2N6421 2N6422 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4240 2N4296 2N4298 2N4299 2N4910 2N4911 2N4912


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    PDF 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420 2N6421 2N3738 equivalent 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420

    2N6294

    Abstract: 2N6297 2N6295 2N6296 ic1.5a
    Text: Datasheet 2N6294 2N6295 NPN 2N6296 2N6297 PNP C OM P LE ME NT AR Y SILICON DARLI NG T O N POWER TR AN SISTORS 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-66 CASE Manufacturers of World Class Discrete Semiconductors


    OCR Scan
    PDF 2N6294 2N6295 2N6296 2N6297 T0-66 2N629b 2N6295 2N6296 2N6297 ic1.5a

    2N6297

    Abstract: 2N6295 2N6294 2N5295 2N6296
    Text: NPN PNP 2N6294 2N6296 2N6295 2N6297 DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS .designed for general-purpose am plifier, low-frequency sw itching and hammer driver applications. • H igh DC C urrent Gain hFE = 3000 Typ @ Ic = 2.0 Adc • L ow C ollector-Em itter Saturation V oltage -


    OCR Scan
    PDF 2N6294 2N6296 2N6295 2N6297 2N6294, 2N6296 2N6295, 2N6297 2N5295

    t066

    Abstract: 2n6354a 2N6278 2N6279 2N6280 2N6281 2N6282 2N6283 2N6284 2N6285
    Text: MfiE » • 0133107 D0DD443 5EMELABI Type Number Rei Code 2N6278 2N6279 2N6280 2N6281 2N6282 2N6283 2N6284 2N6285 2N6286 2N6287 2N6294 2N6295 2N6296 2N6297 2N6298 2N6299 2N6300 2N6301 2N6302 2N6303 2N6306 2N6307 2N6308 2N6312 2N6313 2N6314 2N6315 2N6316 2N6317


    OCR Scan
    PDF QD0D443 2N6278 2N6279 2N6280 2N6281 2N6282 750-18k 2N6283 2N6284 t066 2n6354a 2N6285

    FT152

    Abstract: 2N6297 Motorola
    Text: MOTORCLA SC XSTRS/R F 15E D I b3b?2S4 OOflMbSa T | 7 "-3 3 -¿ 9 7^33-3/ NPN MOTOROLA 2N6294, 2N629S SEMICONDUCTOR TECHNICAL DATA PNP 2N6296, 2N6297 DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed fo r general-purpose amplifier, low-frequency switching


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    PDF 2N6294, 2N629S 2N6296, 2N6297 2N6296 FT152 2N6297 Motorola

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan
    PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    2NXXXX

    Abstract: SILICON TRANSISTOR CORP 2N6357 transistor 2N6274 2N6192 2N6193 2N6211 2N6212 2nxxx 2N6214
    Text: □ D □ a î ru ru □ Q: îC\ o o o o o CO CO co o o CM CO » E E o o o o o co co co co co o o o o o co lo io' lo r-* o o o o o r-’ n .* r-^ o o co CO co co co co co o o o d o o o o lo lo CO CO co CM CM LO LO LO o LO CM CM 1- O O O O O T- 1- CMCMCM Z Z Q -Z Z


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    PDF 2N6192 2N6193 2N6211 2N6212 2N6213 2N6214 2N6215 2N6216 2N6217 2N6226 2NXXXX SILICON TRANSISTOR CORP 2N6357 transistor 2N6274 2nxxx

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


    OCR Scan
    PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan
    PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    Untitled

    Abstract: No abstract text available
    Text: o H DA RLIN GTON O flffcil « M t l t t O T O N M W PACKAGE ec TO-33 < û F-24 TO-21 3/TO-66 TO-204/TO-3 PACKAGE TO-21 3/TO-66 k V O LT S 2N635Q" 2M6351“ *C @ *6 A A 1.0/5.0 1.5 5.0/0.005 1000 1.0/5.0 1.5 5.0/0.01 *C @ V C E A V ^ C E s a t m ax V O LT S


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    PDF 2N635Q" 2M6351" 2N6352" 2N6353" 3/TO-66 2N6300" 2N6301" O-204/TO-3 2N6383* 2N6384M

    TO-213

    Abstract: 2N6297 WF24 2N6351
    Text: A POW ERHOUSE BIPOLAR TO-33 w b v CEO VOLTS PEAK >C AMPS hFE min/max < < o m D E /ICE TYPE PACKAGE o N PN D A R L IN G T O N POW ER T R A N S IS T O R S VCE sat max VOLTS •c @ !b A A 2N6350* 80 5.0 2000 1.0/5.0 1.5 5.0/0.005 2N6351* 150 5.0 1000 1.0/5.0


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    PDF 2N6350* 2N6351* O-213/ 2N6352* 2N6353* 2N6300* 2N6301* O-204/TO-3 2N6383* 2N6384* TO-213 2N6297 WF24 2N6351

    1040B

    Abstract: 2N3910 svt6062 2n5100
    Text: =1 TYPE 1015 NPN 1 GEOMETRY PHYSICAL CHARACTERISTICS 1. 2. 3. 4. Chip size. Chip hickness. Top metal. Back metal. 5. Backside. 6. Bonding pad. 2020 PNP 1. 2. 3. 4. Chip size. Chip thickness. Top metal.


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    PDF 1020B 15X19 3kA/10kA/I0kA 3kA/10kA/10kA 2N6674 2N6675 2N6676 2N6677 1040B 2N3910 svt6062 2n5100