2N6315 Search Results

2N6317

Abstract: 2N6318
Contextual Info: SavantIC Semiconductor Product Specification 2N6317 2N6318 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage ·Complement to type 2N6315/6316 APPLICATIONS ·Designed for general-purpose power amplifier and switching applications

Contextual Info: MOTOROL A SC ÍXSTRS/R F> 6367254 MOTOROLA SC XSTR S/R F 96D 80464 - NPN MOTOROLA - 3 3 - / 3 7^ 3 «3 - 2N6315, 2N6316 SEMICONDUCTOR PNP TECHNICAL DATA 2N6317, 2N6318 COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS

Contextual Info: 2N6315 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a

2N6318

Abstract: 2N6317
Contextual Info: Inchange Semiconductor Product Specification 2N6317 2N6318 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage ·Complement to type 2N6315/6316 APPLICATIONS ·Designed for general-purpose power amplifier and switching applications

2N6315

Abstract: 2N6317 2N6318 2N6316
Contextual Info: DATA SHEET 2N6315 2N6317 2N6316 2N6318 NPN PNP COMPLEMENTARY SILICON POWER TRANSISTORS JEDEC TO-66 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6315 Series types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a hermetically sealed metal case, designed for general purpose amplifier and

2N6316

Abstract: 2N6315
Contextual Info: SavantIC Semiconductor Product Specification 2N6315 2N6316 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage ·Complement to type 2N6317/6318 APPLICATIONS ·Designed for general-purpose power amplifier and switching applications

2N6317

Abstract: 2N6315 2N6316 2N6318
Contextual Info: ÆàMOSPEC COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS . designed for general-purpose power amplifier and application. 2N6315 PNP 2N6317 FEATURES: 2N6316 2N6318 NPN * Low Collector-Emitter Saturation Voltage v ce<sat = 1 0 v M»c) @ >c = 4.0 A * Excellent DC Current Gain- hFE = 20 (Min) @ lc =2.5A

2N6316

Abstract: 2N6315
Contextual Info: Inchange Semiconductor Product Specification 2N6315 2N6316 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage ·Complement to type 2N6317/6318 APPLICATIONS ·Designed for general-purpose power amplifier and switching applications

Contextual Info: 2N6315 and 2N6316 NPN SILICON POWER TRANSISTOR Available DESCRIPTION These 2N6315 and 2N6316 devices are an excellent choice for un-tuned amplifier applications. It is also ideal for general purpose power switch and amplifier applications. Microsemi also offers numerous other products to meet higher and lower power voltage

t066

Abstract: 2n6354a 2N6278 2N6279 2N6280 2N6281 2N6282 2N6283 2N6284 2N6285
Contextual Info: MfiE » • 0133107 D0DD443 5EMELABI Type Number Rei Code 2N6278 2N6279 2N6280 2N6281 2N6282 2N6283 2N6284 2N6285 2N6286 2N6287 2N6294 2N6295 2N6296 2N6297 2N6298 2N6299 2N6300 2N6301 2N6302 2N6303 2N6306 2N6307 2N6308 2N6312 2N6313 2N6314 2N6315 2N6316 2N6317

2N6315

Contextual Info: 2N6315 2N6316 2N6317 2N6318 NPN PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6315 series devices are complementary silicon power transistors, mounted in a hermetically sealed metal case,

Contextual Info: 2N6315 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a

2n6324

Abstract: 2N6280 2N6281 2N6315 2N6316 2N6322 2N6323 2N6325 2N6326 2N6327
Contextual Info: ^ 1 1 * II BR EAKDON /VIM V OLTAGE S hrE SAI VOLTA kGES <M ax. * < n —' m NPN DEVICE PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST <C A) 2N6280 TO-63 160 140 6 4 20 30 120 20 2 1.2 2 2N6281 TO-63 180 150 6 4 20 30 120 20 2 1.2 2 2N6315 TO-66 60 60

Contextual Info: 2N6315 2N6317 MECHANICAL DATA Dimensions in mm inches 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 2 11.94 (0.470) 12.70 (0.500) 1 0.71 (0.028) 0.86 (0.034) 3.61 (0.142) 4.08(0.161) rad. 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) COMPLEMENTARY SILICON

sc 3198 transistor

Abstract: 2N6315 2N6317 2N6318 2N6316 8002 Amplifier IC
Contextual Info: MOTOROLA SC 6367254 {XSTRS/R T t. F> MOTOROLA SC XSTRS/R F D F |b 3 b 7 5 5 4 O D ñ D 4 b 4 ^ ^ |_ 96D 80464 D_ - T - 3 3 - / 3 NPN MOTOROLA 7 er 3 2N6315, 2N6316 SEM ICO NDUCTO R PNP TECHNICAL DATA 2N6317, 2N6318 COMPLEMENTARY SILICON

ic70a

Abstract: 2n6316 2n6318
Contextual Info: 2N6315 2N6317 2N6316 2N6318 NPN PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6315 SERIES types are complementary Silicon Power Transistors, mounted in a hermetically sealed metal case,

X9116WM8I-2.7T1

Abstract: 2N6315
Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-66 Vceo Ic sus (max) VOLTS AMPS ^FE IC/ Vce (min/max @ A/V) fx (MHz) l@.5/.05 75 3 1 40-200@.5/10 5@1/.125 35 10 300h 5 25-100@1/10 .75@1/.125 35 10 2N3585A 400h 5 25-100@1/10 .75@1/.125 35 10 2N3738

2N6315

Abstract: 2n3054a
Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-66 PA C K A G E D E V IC E T Y PE ^C E O sus V O LTS Ic (m ax) AM PS NPN TO-66 2N 3054A 55 4 25-100@ .5/4 2N3583 250h 1 2N 3584 300h 2N 3585 hfE@ i< y v Ce (m in/m ax @ A/V) ^CE<s»l) Pr D * W A TTS fr

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

2NXXXX

Abstract: SILICON TRANSISTOR CORP 2N6357 transistor 2N6274 2N6192 2N6193 2N6211 2N6212 2nxxx 2N6214
Contextual Info: □ D □ a î ru ru □ Q: îC\ o o o o o CO CO co o o CM CO » E E o o o o o co co co co co o o o o o co lo io' lo r-* o o o o o r-’ n .* r-^ o o co CO co co co co co o o o d o o o o lo lo CO CO co CM CM LO LO LO o LO CM CM 1- O O O O O T- 1- CMCMCM Z Z Q -Z Z

B0719

Abstract: BU4080 G80120 2N5849 2SC3254Q 2S0635 2N6455 2S0119 2SC793 BU6070
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 40 45 50 2SC2654K 2SC2654J 2N5490 2N5491 2N5494 2N5495 2So124AH RCA1C05 40875 2SC521A 2S01061 2S01063 2S01363 2S01412 1001412 ID0553 2So1905 2S05530 60 65 70 75 80 90 95 926 l.inmson~eml 2So125AH

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.