2N652 Search Results

2N6520

Abstract: 2N6520 DIODES 2N6515 2N6515RLRM 2N6516 2N6517 2N6517RLRA 2N6517RLRP 2N6519 2N6520RLRA
Contextual Info: 2N6515, 2N6517, 2N6520 High Voltage Transistors NPN and PNP Features • Voltage and Current are Negative for PNP Transistors • Pb−Free Package is Available* http://onsemi.com COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol 2N6517 2N6515 2N6520 Unit Collector − Emitter Voltage

2N6515

Abstract: 2N6516 2N6517 2N6519 2N6520
Contextual Info: ON Semiconductort NPN 2N6515 2N6517 PNP 2N6520 High Voltage Transistors MAXIMUM RATINGS Symbol 2N6515 2N6517 2N6520 Unit Collector–Emitter Voltage VCEO 250 350 Vdc Collector–Base Voltage VCBO 250 350 Vdc Emitter–Base Voltage 2N6515, 2N6516, 2N6517 2N6519, 2N6520

2N6520 DIODES

Abstract: 2N6515 2N6516 2N6517 2N6519 2N6520
Contextual Info: High Voltage Transistors NPN 2N6515 2N6517 PNP 2N6519 2N6520 MAXIMUM RATINGS Symbol 2N6515 2N6519 2N6517 2N6520 Unit Collector–Emitter Voltage VCEO 250 300 350 Vdc Collector–Base Voltage VCBO 250 300 350 Vdc Emitter–Base Voltage 2N6515, 2N6516, 2N6517

2N6517

Abstract: 2N6515 2N6516 2N6519 2N6520
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N6515, 2N6519 2N6516, 2N6520 2N6517 TO-92 Plastic Package HIGH VOLTAGE TRANSISTORS ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

2N 6517 TRANSISTOR

Abstract: 6517 transistor
Contextual Info: 2N6517 2N6517 High Voltage Transistor • • • • Collector-Emitter Voltage: VCEO=350V Collector Dissipation: PC max =625mW Complement to 2N6520 Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector

2N6520BU

Abstract: 2N6520 2N6520TA
Contextual Info: 2N6520 2N6520 High Voltage Transistor • Collector-Emitter Voltage: VCEO= -350V • Collector Dissipation: PC max =625mW • Complement to 2N6517 TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR 2N6520 HIGH VOLTAGE TRANSISTOR T O -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollector-B ase Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollecto r C urrent Base C urrent C ollecto r D issipation

2N6520

Contextual Info: 2N6520 -0.5 A, -350 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  High voltage transistors TO-92 G H Collector J  A REF. D A B C D E F G H J K B

2N1378

Abstract: 2N1924 2N2374 2N1373 2N526 2N508A 2N525 2N1274 2N1305 2N2001
Contextual Info: GERMANIUM PNPSMALL SIGNAL TRANSISTORS Type ycBo V Max YFWO V Max Vc, V Max Vc, V 2N465 2N466 2N467 2N508 2N508A 2N522 2N524 2N525 2N526 2N527 2N580 2N581 2N650 2N651 2N652 2N653 2N654 2N655 2N658 2N659 2N660 2N661 2N662 2N1057 2N1097 2N1098 2N1144 2N1145

2N6516

Abstract: 2n6520 2n6517 2N6515
Contextual Info: MAXIMUM RATINGS Rating 2N6516 2N6515 2N6519 Symbol Collector-Emitter Voltage VCEO Collector-Base Voltage CCBO Emitter-Base Voltage 2N6515, 2N6516, 2N6517 2N6519, 2N6520 v EBO NPN 2N6517 2N6520 U nit 250 300 350 Vdc 250 300 350 Vdc 2N6515 thru 2N6517^ Vdc PNP

2N6521

Contextual Info: 2N6521 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)600m Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)30 h(FE) Min. Current gain.10k

2n6520

Contextual Info: ON Semiconductort NPN 2N6515 2N6517 PNP 2N6520 High Voltage Transistors MAXIMUM RATINGS Symbol 2N6515 2N6517 2N6520 Unit Collector–Emitter Voltage VCEO 250 350 Vdc Collector–Base Voltage VCBO 250 350 Vdc Emitter–Base Voltage 2N6515, 2N6516, 2N6517 2N6519, 2N6520

2N65T

Abstract: 2N6515 CEB npn 10PA 20MHZ 2N6516 2N6517 2N6518 2N6519 2N6520
Contextual Info: 2N6515 2N6516 2N6517 NPN 2N6518 2N6519 2N6520 PNP ♦I COMPLEMENTARY S IL IC O N HIGH VOLTAGE TRANSISTORS JED EC TO-92 CASE D ESC RIPTIO N The CENTRAL SEMICONDUCTOR 2N6515 N P N , p le m e n ta ry s i l i c o n t r a n s i s t o r s d e s ig n e d MAXIMUM RATINGS

2N651

Abstract: germanium af transistors germanium audio 2N652 2N652A t05 case Germanium power 2N651A GERMANIUM PNP LOW POWER TRANSISTORS germanium
Contextual Info: 2N651 2N651A 2N652 2N652A t e n tra i se m ico n d u cto r Corp. C e n tra l S e m ico n d u cto r C orp. GERMANIUM PNP TRANSISTOR kS VOLTS, 200 mW JEDEC T0-5 CASE 145 Adams Avenue Hauppauge, New York 11 788 DESCRIPTION The CENTRAL SEMICONDUCTOR 2N651,A 2N652.A Series are Germanium Alloy PNP Milliwatt

Contextual Info: Not Recommended for New Design Please Use FMMT558 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR 2N6520 ISSUE 1 – MARCH 94 FEATURES * 350 Volt VCEO * Gain of 15 at IC=-100mA C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

2n6520

Abstract: 2N6517 bc250 2n6519
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors NPN NPN 2N 6515 2N 6517 PNP 2N 6519 2N 6520 PNP EMITTER EMITTER MAXIMUM RATINGS Rating Symbol 2N6515 2N6519 2N6517 2N6520 C oilector-E m itter Voltage v CEO 250 300 350 Vdc C ollector-B ase Voltage

2N6515

Abstract: 2N6517 2N6520
Contextual Info: 2N6517 2N6517 High Voltage Transistor • • • • Collector-Emitter Voltage: VCEO=350V Collector Dissipation: PC max =625mW Complement to 2N6520 Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector

CEB npn

Abstract: 2n6518
Contextual Info: 2N6515 2N6516 2N6517 2N6518 2N6519 2N6520 NPN PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6515, 2N6518 series types are complementary silicon transistors designed for high voltage driver and amplifier

Contextual Info: 2N6520 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)350 V(BR)CBO (V)350 I(C) Max. (A)500m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150þ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)250 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)50m

2N6520

Contextual Info: ST 2N6520 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25OC

Contextual Info: 2N6525 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)40ã V(BR)CBO (V)40 I(C) Max. (A)2.5 Absolute Max. Power Diss. (W)20# Minimum Operating Temp (øC)-65þ Maximum Operating Temp (øC)200þ I(CBO) Max. (A)2.0m¥x @V(CBO) (V) (Test Condition)32

transistor 2n6517

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components NPN 2N6515, 2N6517 PNP 2N6519, 2N6520 Features High Voltage l Through Hole Package l 150oC Junction Temperature

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2N6517 TRANSISTOR NPN 1. EMITTER FEATURES z Complement To 2N6520 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value

2N6520

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N6520 TRANSISTOR PNP TO-92 FEATURES 1. EMITTER Power dissipation PCM : 0.625 2. BASE W (Tamb=25℃) Collector current ICM : -0.5 A Collector-base voltage V V(BR)CBO : -350