2N659 Search Results

2N6569

Abstract: 2N6594
Contextual Info: Inchange Semiconductor Product Specification 2N6569 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6594 ・Wide area of safe operation APPLICATIONS ・Designed for low voltage amplifier power switching applications PINNING

2N6569

Abstract: 2N6594
Contextual Info: SavantIC Semiconductor Product Specification 2N6594 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N6569 ·Wide area of safe operation APPLICATIONS ·Designed for low voltage amplifier power switching applications PINNING

2N1378

Abstract: 2N1924 2N2374 2N1373 2N526 2N508A 2N525 2N1274 2N1305 2N2001
Contextual Info: GERMANIUM PNPSMALL SIGNAL TRANSISTORS Type ycBo V Max YFWO V Max Vc, V Max Vc, V 2N465 2N466 2N467 2N508 2N508A 2N522 2N524 2N525 2N526 2N527 2N580 2N581 2N650 2N651 2N652 2N653 2N654 2N655 2N658 2N659 2N660 2N661 2N662 2N1057 2N1097 2N1098 2N1144 2N1145

BC140-16

Abstract: T053 BC109C NPN BC108A BC107A bc108 IC hr 2N6589 2N6590 2N6609 2N6653
Contextual Info: MAE D • 0133187 0 0 0 D M4 5 SEM ELABE G31 I S ML B SEMELAB LTD BI-POLAR TRANSISTO RS CECC AND HIGH REL & HIGH ENERGY Rel Code 2N6589 2N6590 2N6594 2N6609 2N6653 2N6654 2N6655 2N6671 2N6672 2N6673 2N6674 2N6675 2N6676 2N6677 2N6678 2N6686 2N6687 2N6688

bf0262a

Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A

2N6594

Abstract: 2N6569
Contextual Info: JMnic Product Specification 2N6594 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6569 ・Wide area of safe operation APPLICATIONS ・Designed for low voltage amplifier power switching applications PINNING PIN DESCRIPTION

FA 23843

Abstract: 23843 23842 IC 23842 FA2384323843 23921 2N6246 23919
Contextual Info: Micmsemi PNP Transistors Part Number PNP 2N5312 2N586S 2N5677 2N5737 2N5316 2N5318 2NS738 2N5314 2NS872 2N6318 2N5007 2N5009 2N6594 2N5741 2N5742 2N5871 2N6317 2N5853 2N7369 2N5621 2N5623 2N5625 2N5290 2N5291 2N5627 2N6127 2N6246 2N6469 2N6247 2N6248 2N6226

Contextual Info: 2N6592 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)200 V(BR)CBO (V)200 I(C) Max. (A)500m Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)150þ I(CBO) Max. (A)200n @V(CBO) (V) (Test Condition)150 V(CE)sat Max. (V).80 @I(C) (A) (Test Condition)200m

2n6594

Contextual Info: 2N6594 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

Contextual Info: 2N6594 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

2N3055

Abstract: 2N6472 2N3055 TO-3 2N3235 2N3236 2N3238 2N3239 2N6569 2N3240 2N3667
Contextual Info: COLLECTOR CURRENT = 12 AMPS NPN TYPES 1 1 Device Nc 2N6569 C ase TO.-3 VCBO Volts 45 VCEO Volts 40 £us> Ve b o Volts 5 Min 15 Max 200 VCE 4 COLI j ECTO R CURRENT = 12 I 1 D evice Nc 2N6594 Case TO -3 VCBO VCEO (sus Volts V olts 40 45 vebo Volts 5 Ma_x 200

motorola bf758

Abstract: BF758 2SC1304 B0159 MOS60 2N6559 BF757 2SC2752L 45M100U
Contextual Info: POWER SILICON NPN Item Number 10 < 1 A, MJE344K 2N2726 2N3589 2N3591 2N3593 2N3595 BF391P BF391P BF391P MPSW43 ~rf~;3 15 20 2N6592 ZTX656 2N2727 2N3590 2N3592 2N3594 2N3596 MJ2251 ~b~~~ 25 30 B0127 80127 B0157 S627T 2N5655 S1377 2N6593 BF757 ~~~~~7 35 40 BF392P

2N6569

Abstract: 2N6594
Contextual Info: JMnic Product Specification 2N6569 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6594 ・Wide area of safe operation APPLICATIONS ・Designed for low voltage amplifier power switching applications PINNING PIN DESCRIPTION

m0spec 2N3055

Abstract: 2N6594 2n3055 collector characteristic curve 2N3055 2N6569 S200 200 Ampere power transistor S200C
Contextual Info: ¿2&M0SPEC PNP SILICON POWER TRANSISTOR PNP 2N6594 The 2N6594 is a general-purpose,EPIBAS power transistor designed for low voltage amplifier power switching applica­ tions. It is a complement to the NPN 2N6569 FEATURES: * Safe Operating Area- Full Power Rating to 40V

2N6594

Contextual Info: 2N6594 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

2N6569

Abstract: 2N6594
Contextual Info: SavantIC Semiconductor Product Specification 2N6569 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N6594 ·Wide area of safe operation APPLICATIONS ·Designed for low voltage amplifier power switching applications PINNING

2N5048

Abstract: 2N4301 2N5049 2N5218 2N5313 2N5315 2N5387 2N5388 2N5542 2N5959
Contextual Info: ^4 ^TRANSISTOR CO DE J a ñ M ñ 3 S E INC D D O O I E 11] S 84D 00129 D10DETRdf\l515T0R TO., INC. 201 686-0400 • Telex: 139-335 • Outside N Y & NJ area call T O LL FREE 600-526-4581 FAX No. 201-575-5863 NPNTO-61 Type# PHP Com ple­ ment VCEOfSUS) (Volte)

10J2

Abstract: 2N6563 3f05 sf 1012 2N1724 2N1724A 2N1725 2N2811 2N2812 2N2813
Contextual Info: NEW ENGLAND SEMICOND UCT OR INIPIM T O - 6 1 PNP Comple­ ment VCEO SUS (V) 0000053 [ See page 13 for isolated collector versions Case 805 Type No. S^E D VCE (SAT) @ IC/lB ( V @ A/A) VBE @ IC/VCE (V @ Art) VBE (SAT) @ IC/lB STÛ • NES I(max) = 5 to 2 0 A

Contextual Info: Power Transistors TO-3 Case Continued TYPE NO. •c (A) NPN PNP Pd (W) bvceo (V) (V) hFE 8 lc »TYP (A) VCE(SAT) @ic (V) (A) MAX h *TYP (MHZ) MIN MIN MIN MAX 10 125 110 100 20 100 5.0 3.5 10 4.0 2N6249 10 175 300 200 10 50 10 1.5 10 2.5 2N6250 10 175 375

Contextual Info: 0043592 A P I ELECTRONICS INC A P I 26C 00234 ELECTRONICS INC 2b D » F | d D4 3 S c12 D 00 0 2 3 4 b COLLECTOR CURRENT = 15 AMPS NPN TYPES - CONTINUED Device No C ase 2N6496 2N6579 2N6580 2N6581 2N6582 2N6583 2N6584 2N6585 TO-3 T O -3 TO-3 TO-3 TO-3 TO-3

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

2N6248

Abstract: 2N6249 2N6250 2N6251 2N6253 2N6254 2N6282 2N6283 2N6284 2N6285
Contextual Info: Power Transistors TO-3 Case Continued TYPIE NO. •c (A) NPN PNP Pd (W) MAX bvcbo bvceo @ hFE lC *TYP (V) (V) MIN MIN MIN MAX (A) V CE(SAT) @ ic (V) (A) MAX fT *TYP (MHZ) MIN 10 125 110 100 20 100 5.0 3.5 10 4.0 10 175 300 200 10 50 10 1.5 10 2.5 2N6250

REF101KM

Abstract: REF101SM 2N6551 burr brown tame OPA27 REF101 REF101JM REF101RM
Contextual Info: REF101 Precision VOLTAGE REFERENCE FEATURES APPLICATIONS ● +10.00V OUTPUT ● HIGH ACCURACY: ±0.005V ● VERY LOW DRIFT: 1ppm/°C max ● PRECISION CALIBRATED VOLTAGE STANDARD ● TRANSDUCER EXCITATION ● D/A AND A/D CONVERTER REFERENCE ● PRECISION CURRENT REFERENCE