2N6650 Search Results

2N6648

Contextual Info: File N u m b e r 1013 2N6648, 2N6649, 2N6650 10-Ampere P-N-P Darlington Power Transistors 40-60-80 Volts, 70 Watts Gain of 1000 at 5 A T E R M IN A L D E S IG N A T IO N S c FLAN GE Features: • Operates from 1C without predriver A p p lication s: ■ Power switching ■ Audio amplifiers

2N6650 JANTX equivalent

Contextual Info: 2N6648 – 2N6650 PNP Darlington Power Silicon Transistor Available on commercial versions Qualified per MIL-PRF-19500/527 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed PNP transistor is rated at -10 amps and is military qualified up to the JANTXV

2N6649

Abstract: 2N6650 TA8351 TA8488 2N6383 2N6384 2N6385 2N6648 TA8350
Contextual Info: Gl 3875081 G E SO LID STATE 01E D eT | 3 ö 7S0 ö 1 □□172b4 17264 D Darlington Power Transistore_ 2N6648. 2N6649, 2N6650 File Number 10-Ampere P-N-P Darlington Power Transistors 40-60-80 Volts, 70 Watts Gain of 1000 at 5 A TERM INAL D E SIG N A TIO N S

2N6449

Abstract: 2N6649 2N6650 2N6648
Contextual Info: TECHNICAL DATA 2N6648 JANTX, JTXV 2N6649 JANTX, JTXV 2N6650 JANTX, JTXV Processed per MIL-PRF-19500/527 PNP DARLINGTON POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current

ta8350

Abstract: TA8351 TA8488
Contextual Info: File N um ber 1013 HARRIS SEMICOND SECTOR 2N6648, 2N6649, 2N6650 SbE » • 4302S71 OCmObOD 4Tb « H A S 10-Ampere P-N-P Darlington -p .^ 3 ^ 3 1 Power Transistors 40-60-80 Volts, 70 Watts Gain of 1000 at 5 A TERMINAL DESIGNATIONS Features: ■ Operates from 1C without predriver

Contextual Info: Back to Bipolar Darlington Transistors TECHNICAL DATA 2N6648 JANTX, JTXV 2N6649 JANTX, JTXV 2N6650 JANTX, JTXV Processed per MIL-PRF-19500/527 PNP DARLINGTON POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage

2N6649

Abstract: 2N6648 2N6650
Contextual Info: Datasheet 2N6648 2N6649 2N6650 • ■ TM vSemiconductor G V I T iQ 1 Corp. PNP SILICON POWER DARLINGTON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors JEDEC TO-3 CASE

Contextual Info: Power Transistors TO-3 Case Continued TYPE NO. •c (A) NPN PNP Pd (W) bvceo (V) (V) hFE 8 lc »TYP (A) VCE(SAT) @ic (V) (A) MAX h *TYP (MHZ) MIN MIN MIN MAX 10 125 110 100 20 100 5.0 3.5 10 4.0 2N6249 10 175 300 200 10 50 10 1.5 10 2.5 2N6250 10 175 375

Contextual Info: General Transistor Corporation CASE TO-3 le MAX = 2-50A V c e o (sus) = 35-500V NPN Power Transistors PNP Type No. complement MJ1000 MJ900 MJ1001 MJ3001 MJ13014 MJ901 MJ2501 DARLINGTON yes yes yes yes MJ10012 MJ13015 MJ 13330 VCEO (sus) IC (max) (v) (A)

1N6762

Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
Contextual Info: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index

2N6650

Abstract: 2N6385 2N6649 shockley diode 2N6383 2N6384 2N6648
Contextual Info: Æà MOS PEC COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS .designed for low and medium frequency power application such as power switching,audio amplifier,hammer drivers,and shunt and series regulators. FEA TU RES: * High Gain Darlington Performance

TRANSISTOR C 6090 npn

Abstract: RCA Power Transistor TO-3 4 225 TRANSISTOR C 6090 2n6675 rca pnp transistor beta values 2N62* rca to3 transistor 6090 audio output TRANSISTOR NPN driver transistor hfe 60-100 2N5415
Contextual Info: lc sat Features •Excellent switching performance at high volt­ age and current (to 650 V V q e v . 15 A lc(sat) •100% testing of switching parameters, in­ cluding turn-off time and saturation voltage, at Tc=:25°C and T q > 100 °C to provide limit values for worst-case design

RCA Power Transistor TO-3 4 225

Abstract: 2n5415 complementary driver transistor hfe 60-100 RCA Power Transistor 4 225 RCA 2n6388 2N5415 audio output TRANSISTOR NPN 2N3439 2N5240 2N6079
Contextual Info: High-Voltage Power Transistors Applica ti 3ns A wide variety of high-power, medium-power, high-current, and fast-switching types in JEDEC TO-3, TO-39, TO-66, T0-202 VERSATAB, and TO-220 VERSAWATT package. _ »Hiqh-vcDit age differential and operational amplifi er13

cczl

Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
Contextual Info: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

2N7058

Abstract: ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066
Contextual Info: STI Type: VNL005A Notes: Breakdown Voltage: 350 Continuous Current: 25 RDS on Ohm: .20 Trans Conductance Mhos: 10 Trans Conductance A: 10 Gate Threshold min: 2.0 Gate Threshold max: 5.0 Resistance Switching ton: 60 Resistance Switching toff: 180 Resistance Switching ID: 20

2N6248

Abstract: 2N6249 2N6250 2N6251 2N6253 2N6254 2N6282 2N6283 2N6284 2N6285
Contextual Info: Power Transistors TO-3 Case Continued TYPIE NO. •c (A) NPN PNP Pd (W) MAX bvcbo bvceo @ hFE lC *TYP (V) (V) MIN MIN MIN MAX (A) V CE(SAT) @ ic (V) (A) MAX fT *TYP (MHZ) MIN 10 125 110 100 20 100 5.0 3.5 10 4.0 10 175 300 200 10 50 10 1.5 10 2.5 2N6250

2N6449

Abstract: 2N6648 2N6649 2N6650
Contextual Info: TECHNICAL DATA PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/527 Devices Qualified Level 2N6648 2N6649 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

2N6649A

Abstract: 2N63 2n6301a 2n6353a
Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR PACKAGE DEVICE TYPE VcEO sus VOLTS Ic (max) AMPS PNP TO-66 2N6298A 60 2N6299A @ Ic/ ^ C E min/max @ A/V VcE(Mt) @ I c/I b V @ A/A c <p P fx (MHz) 8.0 750/18000@6/3 2.0@4/.016 300 4.0 80 8.0 750/18000@6/3

BUW67

Abstract: BDX85C bdx86c 2N6383 2N6384 2N6385 2N6648 2N6649 2N6650 BDX85
Contextual Info: 1989963 CEN TRA L SEMICONDUCTOR T i ' deT| ‘ 61C - 0 0 1 9 7 ^ oD oon? i T -33-29 ~ jp POWER DARLINGTON TRANSISTORS METAL IC 10A = TYPE lc hFE@ lc VCE(S) @lc fT Min Mhz Volts Watts Min - Max Amps Volts Amps 10 40 100 1,000-20,000 5.0 2.0 5.0 - 2N6649 10

2N6352

Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR PACKAGE PNP TO-66 Ic VcEO sus VOLTS (max) AMPS ^FE @ ^CE min/max @ A/V @Ic/Iß V @ A/A C<p P Ìt (MHz) 2N6298 60 8.0 750/18000@6/3 2.0@4/.016 300 4.0 2N6299 80 8.0 750/18000@6/3 2.0@4/.016 300 4.0

tic 1260 scr texas

Abstract: TA7265 2N6874 ta7719 2N6058 RCA 40408 transistor 2N2405 bd643 BD647 equivalent 2N3228
Contextual Info: RCA Bipolar Power Devices Table of Contents This DATABOOK contains detailed technical information on the full line of more than 750 RCA bipolar power devices consisting of: power transistors, SURGECTORs, ultra-fast-recovery rectifiers, power hybrid circuits, SCRs, and triacs.