2SA1515 Search Results

2SB1237

Abstract: TRansistor 2SB1237 data 2SA1515S 2SD1858 SC-72
Contextual Info: Medium Power Transistor 32V,1A 2SA1515S / 2SB1237 Dimensions (Unit : mm) 2.5 + − 0.2 6.8 + − 0.2 0.9 3Min. 3+ − 0.2 (15Min.) Structure Epitaxial planar type PNP silicon transistor 2SB1237 2+ − 0.2 0.45 +0.15 −0.05 2.5 +0.4 −0.1

2SB1237

Abstract: 2SA1515S 2SB1132 2SD1664 2SD1858 SC-72 T100 2SB1132-QR
Contextual Info: Medium Power Transistor 32V,1A 2SB1132 / 2SA1515S / 2SB1237 2SB1132 2SA1515S 4+ − 0.2 1.5 +0.2 −0.1 (1) 0.4 + − 0.1 1.5 + − 0.1 (2) (3) 0.4 +0.1 −0.05 0.5 + − 0.1 0.4 0.1 1.5 + − 0.1 3.0 + − 0.2 5 Abbreviated symbol: BA (2) 14.5 +

d1664

Abstract: Transistor 1501 2sb1237
Contextual Info: Transistors Medium Power Transistor -32V, -1A 2SB1132/2SA1515S/2SB1237 •F e a tu re s 1) • E x te rn a l dim ensions (Units: mm) LOW VcE(satl. VcE(sat) = - 0 .2 V (Typ.) 2SA1515S 2SB1132 4 S+0.2 (Ic /le = -5 0 0 m A /- 5 0 m A ) 5 - 0.1 16 2) C om plim ents 2S D 1664/2S D 1858.

2SB1132

Abstract: 2SB1237 2SA1515S 2SD1858 transistor pnp 1a 2sB1237 transistor "Power transistor" data sheet transistor PNP 2SD1664 2SB1132 transistor
Contextual Info: Transistors Medium Power Transistor *32V, *1A 2SB1132 / 2SA1515S / 2SB1237 FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = –500mA / –50mA) 2) Compliments 2SD1664 / 2SD1858. FExternal dimensions (Units: mm) FStructure Epitaxial planar type

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA1515S TO – 92S TRANSISTOR PNP 1. EMITTER FEATURES z General Purpose Switching Application 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

rohm 2sd1664

Contextual Info: Medium Power Transistor 32V,1A 2SB1132 / 2SA1515S / 2SB1237 2SB1132 2SA1515S 4+ − 0.2 1.5 +0.2 −0.1 (1) 0.4 + − 0.1 1.5 + − 0.1 (2) (3) 0.4 +0.1 −0.05 0.5 + − 0.1 0.4 0.1 1.5 + − 0.1 3.0 + − 0.2 5 Abbreviated symbol: BA (2) 14.5 +

2SA1515

Abstract: 2sA1515 transistor 2SA1515-Q
Contextual Info: 2SA1515 -1 A, -40 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES   Low Collector-Emitter Saturation Voltage Low Transition Frequency G H Emitter

Contextual Info: ROHM CO LTD h 40E T Ô S a 'm D •^ IRHM T 2SA1515/2SA1515S 7=27-0 9 / I ransistors 2 S A 1 5 1 5 0 0 0 5 4 b 4 y U -^ P N P h 7> yX ^ Power Amp. 7 ~ 2 7 - /3 Epitaxial Planar PNP Silicon Transistors ■ • # f f i\|‘;il3I/'Dimensidns U nit: mm 1) Low VcE(sai) (T y p )= —0.2V(at —500mA)

SA1515

Contextual Info: 2SA1515/2SA1515S h -y > v 7, $ /Transistors PNP ' > '; = ! > h 7 > V X Î ! /Medium Power Amp. Epitaxial Planar PNP Silicon Transistors 2 SA1515 2 SA 1515S 1 Low VcE sat) (T y p )= —0.2V(at —500mA) 2SA1515 2) 2 S C 3 3 7 7 £ z i > :/ 'J T '£ > '5 (2SA1515)0

2SA1515S

Abstract: 8198
Contextual Info: SPICE PARAMETER 2SA1515S by ROHM TR Div. * 2SA1515S PNP BJT model * Date: 2006/11/15 .MODEL 2SA1515S PNP + IS=300.00E-15 + BF=211.92 + VAF=100 + IKF=5.5783 + ISE=300.00E-15 + NE=1.5009 + BR=15.974 + VAR=100 + IKR=17.146 + ISC=1.0298E-12 + NC=1.1959 + NK=.8198

Contextual Info: Transistors Medium Power Transistor {-32 V, -1A 2SB1132/2SA1515S/2SB1237 ►External dimensions Units: mm) •F e a tu re s 1) LOW VcE(sat). VcE(satj = -0 .2 V (Typ.) (Ic/ I b = -5 0 0 m A /-5 0 m A ) 2) Compliments 2S D 1664/2S D 1858. •S tru ctu re

2sB1237 transistor

Abstract: 2SB1237 2SA1515S 2SB1132 2SD1664 2SD1858 SC-72 T100
Contextual Info: 2SB1132 / 2SA1515S / 2SB1237 Transistors Medium Power Transistor −32V,−1A 2SB1132 / 2SA1515S / 2SB1237 zExternal dimensions (Unit : mm) 2SB1132 4+ − 0.2 1.0 + − 0.2 0.4 + − 0.1 1.5 + − 0.1 (2) (3) 0.5 + − 0.1 0.4 0.1 1.5 + − 0.1 3.0 + − 0.2

Contextual Info: Transistors Medium Power Transistor *32V, *1A 2SB1132 / 2SA1515S / 2SB1237 FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = –500mA / –50mA) 2) Compliments 2SD1664 / 2SD1858. FExternal dimensions (Units: mm) FStructure Epitaxial planar type

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SA1515 TRANSISTOR PNP 1. EMITTER 2. COLLECTOR FEATURES z Low Collector-Emitter Saturation Voltage z Low Transition Frequency 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SC337

Abstract: A1515S 2SA1515
Contextual Info: h 7. % / J > y 2SA1515 ^ 2SA1515 /2 S A 1 515S ransistors ^ 5 3 Epitaxial Planar PNP Silicon Transistors 4JfL 2 j*§ llliiffl/M e d iu m Power Amp. • ttft • W f i'^ jiE I/D iin e n s io n s U nit : mm 1) V C E ( s a t ) * ''i& < , « « E f t^ lC S S L T

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SA1015

Abstract: 2SA1358 2SA965 2SB1212 2SB560 sa1015 2SA934 2SA985 NEC 2SA1096 2SA385
Contextual Info: - 6 - m % « tt T y p e No. Manuf. = í¥ SANYO TOSHIBA m NEC B ÎL HITACHI * 2SA 479 m S * * ac s * 2S A 480 y.- - * 2S A 482 * * 2 S A 4 8 3 *-' 2SB596 2SA985 2SB507 2SB596 2SA985 2SB856 2SA836 2SA 4 ? 3 ^ ' * 2SA 474 ^ * 2SA 475 * 2 S A 4 7 7 ír. * 2SA 478 ^

2sa970

Abstract: 2SA564A 2SA906 2sa1015 2SA988 2SA904A 2SA1142 2SA1207 2sa949 2SA1038
Contextual Info: - 2SA 893A 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 894 895 896 89/ 898 ^ 899 ^ 900 / 901 2SA 902 ^ 2SA 903 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 904 905 ^ 906 ^ 912 913 913A 914 915 — 916 , 917 ^ 918 2SA 920 2SA 921 2SA 2SA 2SA 2SA 2SA 922 S 923 '' 924 925

2SB557 TOSHIBA

Abstract: 2SB1314 toshiba 2sb554 2SB546A 2SB596 2sa483 2SB554 2SB54 2SB557 2SB857
Contextual Info: 564 565 . 566 y 566AK 2SB 566K 2SB 567 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 568 569 „ 510 571 572 „ 573 ^ 574 575 •576 ' 2SB 577 , 2SB 578 ^ 2SB 579 2SB 2SB 2SB 2SB 2SB 2SB 580581 582 583 584 585 2SB 2SB 2SB 2SB 2SB 2SB 586 595 596 598 599 600 2SB 601

2sc3855

Abstract: 2SC3858 2SC3898 2sa1494 2SC3859 2SA1491 2SA1492 2SA1493 2SA1495 2SC3856
Contextual Info: - m fT Vc e V (MHz) ton tf (Ms) m tstg (m s ) (m s ) ft Cob (max) (pF) tt ( 1 3 = 2 5 * 0 Cre (max) (pF) il [*EPfätypfiI3 Œ g □ y-fv 14 ;lJj Ê ft m # mm mm m % M £ -12 -0.5 0.3* 0. 2* 0.9* 2SC3855 (MT100) BCE 2SA1491 -12 -0.5 0.6* 0.2* 0.9* 2SC3856

b 817

Abstract: toshiba 2SB755 B817 2SB755 2SB897 2SB927 2SA1213 2SB1272 2sb789a 2SA1194
Contextual Info: - £ Type No. jcg 7 |3 £ Manuf. & T T S « B m SANYO 2SA1703 2SB 793A 2SB 794 2SB 795 fé 2SB 798 2SB 799 . B S b a B H 2SB1119 2SB1122 2SAI 416 m B « 2SB1122 2SB1122 2SA1416 2SA1416 2SA1416 2SA1418 2SB 813 2SB 814 . 2SB 815 2SB 816 _ 2SB 817 ✓ 2SB 818

2SB737

Abstract: 2SA1015 2SA978 2SA933 2sa1306 2SA933 R 2SA970 2SA1127 2SA1142 2SA929
Contextual Info: - m % tt 2S A 973 « M a n u f. T y p e No. J SANYO tö T 2S A 9 7 7 tö T 2SA1209 2S A 9 7 7 A fé T 2SA1352 = » _ * 2S A 978 2 SA 979 X TOSHIBA NEC 2S A988 2SA1030 2SA1142 2SB648 ± FUJITSU a T & M ATSUSHITA H £ M ITSU BISHI □ — A RO HM 2SA933 2SA1127

2SD1960

Abstract: 2SD1468 2SB737 L120A 2SC1740 transistor 2SD786 2SD786S 2SC1740SLN 2SA933A 2SC2808
Contextual Info: Transistors TO-92 •SPT TO-92 and its smaller version, the SPT transistors, have conventional leads that fit into PWB mounting holes. Ammo box taped packaging for automated insertion is standard packaging, however, bulk is also available. Package Application

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.