2SA1688 Search Results

2SA1688

Abstract: L21M ITR04133 ITR04134 ITR04135 ITR04136 ITR04137 ITR04138 2SA1256 GFE10
Contextual Info: 注文コード No. N 2 7 9 8 A 2SA1688 No. N 2 7 9 8 A 20400 半導体ニューズ No.2798 とさしかえてください。 2SA1688 PNP エピタキシァルプレーナ形シリコントランジスタ 高周波一般増幅用 用途 ・FM RF 増幅 , ミキサ , 発振 , コンバータ , IF 増幅用。

ITR04135

Abstract: 2SA1656 2SA1688 ITR04133 ITR04134
Contextual Info: Ordering number:ENN2798A PNP Epitaxial Planar Silicon Transistors 2SA1688 High-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • Ideally suited for use in FM RF amplifiers, mixers, oscillators. converters, and IF amplifiers.

2SA1688

Contextual Info: Transistors IC SMD Type PNP Epitaxial Planar Silicon Transistors 2SA1688 Features Very small-sized package. High power gain. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage

IW 1688

Abstract: 2SA1256 2SA1688
Contextual Info: Ordering number : EN 2798A _ 2SA1688 PNP Epitaxial Planar Silicon Transistor High-Frequency General-Purpose Amp Applications Applications • Ideally suited for use in FM RF amplifiers, mixers, oscillators, converters, and IF amplifiers. Features

Contextual Info: 2SA1688-3 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A)30m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)10 h(FE) Min. Current gain.60 h(FE) Max. Current gain.120

2SA1688

Abstract: 2SA1656
Contextual Info: Ordering number:EN2798A PNP Epitaxial Planar Silicon Transistors 2SA1688 High-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • Ideally suited for use in FM RF amplifiers, mixers, oscillators. converters, and IF amplifiers.

ANI 1015

Abstract: TRANSISTOR SE 135 t3hs 2SA1256 2SA1688
Contextual Info: SA NY O S E M I C O N D U C T O R CORP SSE D 7 1 1 7 0 7 b 00013=112 T T-3I-/S 2SA1688 ♦ PNP Epitaxial Planar Silicon Transistor 2 059 High-Frequency General-Purpose Amp Applications D2798 A pplications Ideally suited for use in FM RF am plifiers, m ixers, oscillators, converters, IF am plifiers

3SK190

Abstract: SGF19 2SC2814-2 2sk543 cross 2sc2078 2SK715
Contextual Info: High Frequency Transistors Electrical characteristics Ta = 25 deg. C Absolute maximum ratings Device Package type Application lcao max @ Vcb VcBQ VCEO Vebo (V) (V) (V) , te (mA) Pc (mW) J o Icbo max m hFE @ Vce • Ic Vcb (V) h rc f i @ Vce • lc Vce Ip

2SA1264N

Abstract: 2sa143z 2SA1705 2SA1283 1818 2SA1613 2SB1421 2SA1821 2SA949 2SB1207
Contextual Info: - m Type « tt No. « Manuf. 2 S A 1 78 5 = >¥ 2 S A 1 78 8 □— A 2 S A 1 78 9 □ — A H if SANYO 2 S A 1 78 7 ^ 2 S A 1 79 0 M £ S 1 TOSHIBA NEC 2SA1432 2SA1264N 2SB966 9SA1R3? 2SA1836 B aL H I TACH! 2SB1508 * ± a FUJITSU T MATSUSHITA 2SB1546 2SB1207

SS2205

Abstract: 2SA1628 2SB814 HSI 527 2SA1284 2SA1178 2SA1283 2SA1586 2SB1043 2SA934
Contextual Info: 33 tt « Manuf. ft 3 SANYO M TOSHIBA m « T y p e No. o a ED - ±L HITACHI S ± FUJITSU 35 ta T DTA123YS 1505 n m w * 2SA 1506 m w m ,^ 2SA 1 507 , 2SA 1508 2SA 1509 2SA 1510 ' 2SA 1511 /• = ft 2SA 1512 & T 2SA 1 5 1 3 -■ a 2SA 1514 □ - A 2SA1257 2S A 1 1 6 3

Contextual Info: SA0YO M CP Mini C h i p Pack Transistors The package of Sanyo MCP (Mini Chip Pack) transistors is made so small-sized as approximately 2/3 of the CP package heretofore in use, permitting MCP transistor-applied sets to be made smaller, ole V e i - y h i g h

a1764

Abstract: 2SA1815 J2SK242 A1607 DS-17 SANYO
Contextual Info: SANYO MCP Mini C h i p Pack Transistors The package of Sanyo MCP (Mini Chip Pack) transistors is made so small-sized as approximately 2/3 of the CP package heretofore in use, permitting MCP transistor-applied sets to be made smaller, ate V t a t - y h i g h

mosfet HF amplifier

Abstract: 3SK266 2sk2073 2SK931 2SA1688 2SA1857 2SA1863 2SC4399 2SC4400 2SC4432
Contextual Info: TRANSISTORS H ig h -F re q u en cy T ra n s is to rs Absolut« maximum ratings Device Package AppHeaiiens ir* mA VCBO ; » geo r X a o <VJ ! (V) I (V) PC (mW) Electrical characteristics (T, = 25 °C) I I leso max @ Vcb Ti I 2SA1863* SMCP HF amplifier 15

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

mosfet HF amplifier

Abstract: Hf amplifier 200T
Contextual Info: TRANSISTORS High-Frequency Transistors Absolut* maximum rating* tm Application* 2SA1863* SMCP HF amplifier 2SC4918* SMCP HF amplifier 2SA1857 MCP 2SC4400 MCP 2SC4399 Vceo Í »CEO W ! V i 12 15 ifl «fetO (V) (mA) PC (mW) Electrical characteristics (T, = a

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

smd transistor marking 12W

Abstract: SMD transistor Marking 13w SMD type Marking 13w SPM5001 SOT89 PNP marking GA ec3h04b smd transistor 12W 52 SMA4205 6c 6pin SGD103
Contextual Info: RF Devices Jun.2006 Hyper Device Business Unit, Semiconductor Company SANYO Electric Co.,Ltd. New Products High High Gain，Low Gain，Low Noise Noise SiRF–Bipolar Transistor MCH4009 •Packege : MCPH4 ■Features High Gain・・・|S21e|2=17dB＠2GHz 0.3

Contextual Info: TRANSISTORS High-frequency Transistors Absolute maximum ratings Type No. Package type Electrical characteristics Ta » 251C iCBOmax @ VCB Applications VCBO (V) VCEO (V) Vebo (V) 1C (A) PC CW) (? ) ICBO max ( * A) hFE @ VCE •1C VCB (V) VCE (V) hFE fr@ VCE- ic

2SA1692

Abstract: 2SA1719 2SA1712 2SA1715 2SA1107 2SC4490 MP40 2SA1699 2sa1115 2SA1680
Contextual Info: - 46 - m X Ë fà s ít £ ffl & Vcbo V 2SA1678 Hi# INV/SW/D ' 50 (Ta=25‘ C , * E P ( á T c = 2 5 cC ) VcEO (V} - 50 I c (DC) 0.15 2SA1680 PA/PSW - 60 -50 -2 0. 9 PA/PSW '60 - 50 -2 0.5 HV D -300 -300 -0.05 0. 25 -100 -80 -0.5 0. 3 -40 -20 -0.15 0.15

2SA1763

Abstract: A4-DCA015 C4168 A1753 transistor a1839 A1814 2SA1813 DCF015 2SC4413 2SC4694
Contextual Info: M C P Mini Chip Pack Transistors The package of Sanyo MCP (Mini Chip Pack) transistors is made so sraal1-sized as approximately 2/3 of the CP package heretofore in use, permitting MCP transistor-applied sets to be made smaller, ate V e r y li i g h f r e q u e n c y