2SB944 Search Results

2SB944

Abstract: 2SD1269
Contextual Info: JMnic Product Specification 2SB944 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Large collector current IC ・Low collector saturation voltage ・Complement to type 2SD1269 APPLICATIONS ・For power switching applications PINNING PIN

2SB0944

Abstract: 2SB944 2SD1269
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0944 (2SB944) Silicon PNP epitaxial planar type For power switching Complementary to 2SD1269 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Parameter Collector-emitter voltage (Base open)

2SB0944

Abstract: 2SB944 2SD1269
Contextual Info: Power Transistors 2SB0944 2SB944 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1269 Unit: mm ● • 0.7±0.1 Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –130 V Collector to emitter voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0944 (2SB944) Silicon PNP epitaxial planar type For power switching Complementary to 2SD1269 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −130

2SB0944

Abstract: 2SB944 2SD1269
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0944 (2SB944) Silicon PNP epitaxial planar type For power switching Complementary to 2SD1269 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Parameter Collector-emitter voltage (Base open)

2SD1269

Abstract: 2SB0944 2SB944
Contextual Info: Power Transistors 2SD1269 Silicon NPN epitaxial planar type For power switching Complementary to 2SB0944 2SB944 Unit: mm ● 0.7±0.1 • Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 130 V Collector to emitter voltage

2SB944

Abstract: 2SD1269
Contextual Info: Power Transistors 2SD1269 Silicon NPN epitaxial planar type For power switching Complementary to 2SB944 Unit: mm ● 0.7±0.1 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 130 V Collector to emitter voltage

Contextual Info: Power T ransistors 2S D Ì269 2SD1269 Silicon NPN Epitaxial Planar Type • P a ck a ge D im ension s Unit ! mm 4.4max. 10.2max. P o w e r S w itch ing C o m p le m e n ta ry P a ir with 2SB944 5.7max. ■ F e a tu re s • • • • 2.9max. Low collector-emitter saturation voltage V ce (»>«

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0944 (2SB944) Silicon PNP epitaxial planar type For power switching Complementary to 2SD1269 4.2±0.2 M Di ain sc te on na tin nc ue e/ d 16.7±0.3 14.0±0.5 Parameter Symbol

Contextual Info: 2SB944 Pow er Transistors 2SB944 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD1269 •Features • • • • Unit ! mm 4.4max. 2.9max J0.2max. 5.7tnax. Low collector-emitter saturation voltage VcEisa»

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0944 (2SB944) Silicon PNP epitaxial planar type For power switching Complementary to 2SD1269 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −130

2SB944

Abstract: 2SD1269 panasonic 2SB Scans-001554
Contextual Info: Power Transistors 2SB944 2SB944 Silicon PNP Epitaxial Planar Type P ackage Dim ensions Pow er Switching C om plem entary Pair with 2 S D 1 2 6 9 U n it mm 4 .4 m a x . 1 0 .2 m a x . • Features 2.9 max, • Low co llector-em itter saturation voltage VcEisao

2SB944

Abstract: 2SD1269
Contextual Info: Power Transistors 2SB944 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1269 Unit: mm ● 0.7±0.1 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –130 V Collector to emitter voltage

2SB944

Abstract: 2SD1269
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB944 DESCRIPTION •Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@ IC= -3A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -80V (Min) ·Good Linearity of hFE ·Complement to Type 2SD1269

2SB944

Abstract: 2SD1269
Contextual Info: Inchange Semiconductor Product Specification 2SB944 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Large collector current IC ・Low collector saturation voltage ・Complement to type 2SD1269 APPLICATIONS ・For power switching applications

2SB0944

Abstract: 2SB944 2SD1269
Contextual Info: Power Transistors 2SB0944 2SB944 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1269 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −130 V Collector-emitter voltage (Base open) VCEO −80 V Emitter-base voltage (Collector open)

2SD1539

Abstract: d53 pnp transistor 2SC4714 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258 2SC2923
Contextual Info: Transistors Selection Guide by Applications and Functions TO-126 (D523K, D53) U Type (D41) V ceo MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F (D59) (V) 2SA1605 2SC3063 2SC2923 2SC4714 Chroma input V < n (V) lc (A) -0 .0 5

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SD1267

Abstract: 2SD1267A 2SD1268 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274
Contextual Info: - 242 - Ta=25<C, *EP(äTc=25<C s ít 2SD1267 2SD1267A 2SD1268 2SD1269 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274 2SD1274A 2SD1274B 2SD1275 2SD1275A 2SD1276 2SD1276A 2SD1277 2SD1277A 2SD1279 2SD1280 2SD1286 2SD1286-Z 2SD1288 2SD1289 2SD1290

K 2411

Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
Contextual Info: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli­ cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type

2SB0774

Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)

DARLINGTON TRANSISTOR ARRAYS pu1501

Abstract: 2SD1273 PU3146 PU4128 apu4148
Contextual Info: Transistors Selection Guide by Applications and Functions I Power Transistor Arrays Series Name Equivalent Circuit Packaqe (No.) Equivalent Circuit Structure Application General Exam ple(N PN ) PU3000 Series PUA3000 Series PU4000 Series 8 Pin •SIL Packaqe (D72) (D73)

A1534

Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) A Tentative ( : Com plem entary pair Panasonic 125 Part Number List ■ Discrete Devices Old Part Nos | New Part Nos [ Package Sym bol 1 SS Mini 3P: SS-Mini 3-pin