2SC301 Search Results

Contextual Info: 2SC301 1 SIUCQN NPN EPITAXIAL PLANAR t y p e t r a n s i s t o r U H F-C BAND LOW NOISE AMPLIFIER APPLICATIONS. • • • High Gain Low Noise Figure High f r U nit in mm : |S 2 ie|2= 12dB Typ. : NF = 2.3dB (Typ.), f= lG H z : f'i’ = 6.5GIIz M AXIM UM RATINGS (Ta = 25°C)

2SA1232

Abstract: 2SC3012
Contextual Info: JMnic Product Specification 2SA1232 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PFa package ・Complement to type 2SC3012 APPLICATIONS ・Audio frequency power amplifier. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

Contextual Info: 2SC3011 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3011 Unit in mm U H F-C BAND LO W NOISE AM PLIFIER APPLICATIONS High Gain Low Noise Figure High fp + 0.5 2.5-0.3 |S2lel2= 12dB Typ. NF = 2.3dB (Typ.), f=lG H z fT = 6.5GHz + 0.25 .1 .5 -0 .1 5 .

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

MRF9331

Abstract: 2SC3029 2N2206 2SC2821 MMBR5031 K918 MMT3960A 2n3681 340t 2SC330
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 2N2318 2N2320 2N3953 MMT3960 lBFT24 2N5186 ST6110 ST6125 ST6120 MMT807 ~~~~~~1 15 20 2N2967 2N3010 2N2475 2N709 MM1748A 2N3832 2N709A 2N2784 ~~~~;~ 25 30 2N2257 2N3681 2SC3011 2SC2876 2SC3301 MRF9331

VHF transmitter circuit 10m

Abstract: 2SC3018 Z5550
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3018 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION 2SC3018 is a silicon NPN epitaxial planar type transistor desig­ ned for 7.2V olts VHF power amplifiers applications. OUTLINE DRAWING D im e n s io n s in m m FEATURES • High gain: Gpe ë 13dB @f = 175MHz, Vcc = 7.2V

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3017 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING Dimensions in mm 2 S C 3 0 1 7 is a silicon NPN epitaxial planar typ e transistor specifi­ cally designed for V H F p ow er amplifiers applications. FEATURES •

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3011 U nit in mm U H F -C BAND LOW NOISE AMPLIFIER APPLICATIONS. +as 2 .5 -C l3 High Gain |S21eP = 12dB Typ. Low Noise Figure NF = 2.3dB (Typ.), f= lG H z + CX25 1.3-ais High f'p -HO dd +I E£ fp = 6.5GHz M A X IM U M RATINGS (Ta = 25°C)

2sc3055

Abstract: T03B 2SC3008-KA 2SC3030 2SC3008-MA 2SC2999 2SC3000 2SC3001 2SC3004 2SC3006
Contextual Info: - 142 - ili íS±¿ Ta=25cC, *EpíÍTc=25t¡ A7 -a f-L -a m iâ VCBO VcEO (V) (V) Ic(DC) (A) Pc* (W) (W) HF A 25 20 0.03 0.15 2SC3000 HF A 30 20 0.03 0.25 2SC3001 HF PA 20 2SC2999 2SC3004 BÍL 2SC3006 2SC3007 2SC3008-KA an 2SC30Û8-MA sm 2SC3011 2SC3012

2SC3011

Contextual Info: 2SC3011 TOSHIBA 2SC3011 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm U H F-C BAND LO W NOISE AM PLIFIER APPLICATIONS. High Gain Low Noise Figure High fp |S2lel2= 12dB Typ. NF = 2.3dB (Typ.), f=lG H z fT = 6.5GHz 2 .5 + — 0 .5 0 .3 M A X IM U M RATINGS (Ta = 25°C)

2SC331 equivalent

Abstract: 2SC331 2sa467 2SC328 2SC386A 2sc317 2SC337 2SC368 2SC369 2sc327
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SC301 25 5 100 260 150 85 10 0.1 400* 3.5 2SC302 50 5 100

2SC3017

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3017 NPN EPITAXIAL PLANAR TY PE DESCRIPTION OUTLINE DRAWING Dimensions in mm 2 S C 3 0 1 7 is a silicon NPN epitaxial planar typ e transistor specifi­ cally designed for V H F p ow er amplifiers applications. FEATURES •

2sC3011

Contextual Info: 2SC3011 TO SH IBA 2SC3011 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE U H F-C BAND LOW NOISE AMPLIFIER APPLICATIONS • • • High Gain Low Noise Figure High fp |S2lel2= 12dB Typ. NF = 2.3dB (Typ.), f=lG H z fT = 6.5GHz MAXIMUM RATINGS (Ta = 25°C)

2SA1232

Abstract: 2SC3012
Contextual Info: SavantIC Semiconductor Product Specification 2SA1232 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SC3012 APPLICATIONS ·Audio frequency power amplifier. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3018 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION 2SC3018 is a silicon NPN epitaxial planar type transistor desig­ ned for 7.2V olts VHF power amplifiers applications. OUTLINE DRAWING D im e n s io n s in m m FEATURES • High gain: Gpe ë 13dB @f = 175MHz, Vcc = 7.2V

Contextual Info: Transistors IC SMD Type Product specification 2SC3011 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low Noise Figure: NF=2.3dB Typ. f=1GHz 1 High fT : fT=6.5GHz 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 High Gain :|S21e|2=12dB(TYP.) 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1

Contextual Info: 2SC3011 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3Q11 Unit in mm U H F-C BAND LOW NOISE AM PLIFIER APPLICATIONS. High Gain Low Noise Figure TTicrh -fin + 0.5 —0.3 : |S2iel2= 12dB Typ. : NF = 2.3dB (Typ.), f=lG H z • fm = fi üPrïïy

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3019 NPN EPITAXIAL PLANAR T Y P E DISCRETION OUTLINE DRAWING 2SC3019 is silicon NPN epitaxial planar typ e transistor Dimensions in mm designed fo r RF power am plifiers in U H F band. FEATURES • • High power gain: Gpe

2SC3012

Abstract: 2SA1232
Contextual Info: SavantIC Semiconductor Product Specification 2SC3012 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SA1232 ·High transition frequency APPLICATIONS ·Audio frequency power amplifier. PINNING PIN DESCRIPTION 1 Base 2

NEC 2706

Abstract: 2SC1815 2SC2283 KA 2717 2SC1971 2SD810 2SC3359 nec 2741 2SC2645 2SC3012
Contextual Info: - m. % Type No. 2SC 2706 / 2SC 2SC 2SC 2SC 2SC 2 SC 2SC 2SC 2SC 2710 ^ 2711 2712" 2713 " 2714 _ 27 15 " 2716 — 2717 y 2718 « Manuf. = b $ SANYO TOSHIBA 2SC3182N M 'S . 2SD1047 % 3Ê 2SD1935 m NEC 2SC3012 2SC4639 2SD810 2SC2281 2SC1623 K 2SC2814 2SC2814

2SC3012

Abstract: 2sa123 2SA1232
Contextual Info: Inchange Semiconductor Product Specification 2SC3012 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SA1232 ·High transition frequency APPLICATIONS ·Audio frequency power amplifier. PINNING PIN DESCRIPTION 1 Base 2

marking MA

Abstract: 2SC3011
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC3011 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low Noise Figure: NF=2.3dB Typ. f=1GHz 1 High fT : fT=6.5GHz 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 High Gain :|S21e|2=12dB(TYP.) 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1

2SC3011

Contextual Info: 2SC3011 TOSHIBA 2SC3011 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm U H F-C BAND LO W NOISE AM PLIFIER APPLICATIONS + 0.5 High Gain Low Noise Figure High fp |S2lel2= 12dB Typ. NF = 2.3dB (Typ.), f=lG H z fT = 6.5GHz M A X IM U M RATINGS (Ta = 25°C)