2SD102 Search Results

2SD1025

Contextual Info: Product Specification www.jmnic.com 2SD1025 Silicon Power Transistors DESCRIPTION ・DARLINGTON ・With TO-220 package PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline TO-220 and symbol Absolute maximum ratings(Ta=25℃)

2SD1024

Contextual Info: SavantIC Semiconductor Product Specification 2SD1024 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·High DC current gain ·DARLINGTON PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings Ta=25

2SD1023

Abstract: darlington Vce-200V
Contextual Info: SavantIC Semiconductor Product Specification 2SD1023 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·High DC current gain ·DARLINGTON PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings Ta=25

2SB187

Abstract: 2SB178 2sd118 2SD188 2SD128 2SD111 2SB178A 2SD123 2SD104 2SD105
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc Tj (V) (V) (mA) (mW) (ºC) 2SD101 80 6 600 250 75 2SD102 110 10 3A 25W(Tc=25ºC) 150 2SD103 80 10 3A 25W(Tc=25ºC) 150 2SD104 20 6 400 150 75 2SD105 20 6 400 150 75 2SD106 2SD107 80 10 5A 50W(Tc=25ºC) 150

th 2190

Abstract: 2SD1020 IC 4011 MA 7824 T460-8525 LM011 IC700 tl 7824
Contextual Info: :F — S7 • S/— S '> • ; = ] > S ilic o n h T r a n s is t o r 2SD1020 N P N x t ° ^ + '> 7 ,' ; P î ^ '> «J □ ft » > h =7 > î > 7 > 9 * m ffl, 'ÎS * Œ * t it lB S i i7 ) i — 9 K 7 -i 7 ', -?■c o f t g - f f K v 4 7 ' m W i 4.0 ± 0 . 2

2SD1023

Abstract: T5L20
Contextual Info: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1023 Case : TO-220 T5L20 Unit : mm 5A NPN RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

323a

Contextual Info: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1024 Case : TO-220 T8L10 Unit : mm 8A NPN RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

2sd1020

Abstract: 2SB810
Contextual Info: NPN SILICON TRANSISTOR 2SD1020 D E S C R IP T IO N The 2 S D 1 0 2 0 is designed fo r use in o u tp u t stage o f portable R A D IO and cassette ty p e tape recorder, general purpose applications. FEATURES • High to ta l pow er dissipation. PT = 3 5 0 m W

2SD1022

Abstract: T5L10
Contextual Info: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1022 Case : TO-220 T5L10 Unit : mm 5A NPN RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

22a ic

Abstract: 2SD1026 T15L10
Contextual Info: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1026 Case : MTO-3P T15L10 Unit : mm 15A NPN RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

2SD1022

Abstract: T5L10
Contextual Info: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1022 Case : TO-220 T5L10 5A NPN RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current DC

Contextual Info: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1023 Case : TO-220 T5L20 Unit : mm 5A NPN RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

2SD1023

Contextual Info: Product Specification www.jmnic.com 2SD1023 Silicon Power Transistors DESCRIPTION ・DARLINGTON ・High DC current gain ・With TO-220 package PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline TO-220 and symbol

Contextual Info: 2SD1023 T5L20 NPN#—lJ > t - > h ÿ ï'> Z 2 X NPN Dartington Transistor \l">:felSI O utline Dimensions jt3.6*°-2 4.6 ±0! 10.4±o.2 1.3*Q-2 O yl-ie^ Date code 154 4 9 -D1023 No. B C E MffiEUHl E quivalent C ircuit t.4 * m 2.4±o.3 n c+(u 0.6-O.1 0.74±0-1

2sd1026

Contextual Info: SavantIC Semiconductor Product Specification 2SD1026 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High DC current gain ·DARLINGTON PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline TO-3PN and symbol

323a

Contextual Info: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1022 Case : TO-220 T5L10 Unit : mm 5A NPN RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

2SD1025

Abstract: T8L20 200v 5a transistor
Contextual Info: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1025 Case : TO-220 T8L20 8A NPN RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current DC

T8L10

Abstract: 2SD1024
Contextual Info: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1024 Case : TO-220 T8L10 Unit : mm 8A NPN RATINGS ●Absolute Maxi mum Rati ngs Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

2SD1023

Abstract: T5L20
Contextual Info: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1023 Case : TO-220 T5L20 5A NPN RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current DC

2SD1021

Abstract: R0809
Contextual Info: NEC NPN SILICON TRANSISTOR ELECTRON DEVICE 2SD1021 DESCR IPTIO N The 2SD1021 is designed fo r use in driver and o u tp u t stages o f audio frequency am plifiers. PAC K A G E D IM E N S IO N S in millimeters • High total power dissipation: FE A TU R E S

Contextual Info: SEC NPN SILICON TRANSISTOR ELECTRON DEVICE 2SD1020 DESCRIPTION The 2SD1020 is designed fo r use in o u tp u t stage o f portable R A D IO PACKAGE DIMENSIONS in millimeters and cassette typ e tape recorder, general purpose applications. FEATURES • High to ta l power dissipation.

2SD1025

Abstract: T8L20 2SD102 transistor TC-10 200v 5a transistor
Contextual Info: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1025 Case : TO-220 T8L20 Unit : mm 8A NPN RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

TO-247 NPN SILICON POWER TRANSISTORS

Abstract: 2sd1026 TO-247 NPN SILICON POWER TRANSISTORS DARLINGTON
Contextual Info: Product Specification www.jmnic.com 2SD1026 Silicon NPN Transistors Features B C E ﹒With TO-247 package ﹒Darlington transistor Absolute Maximum Ratings Tc=25℃ SYMBOL PARAMETER RATING UNIT V VCBO Collector to base voltage 100 VCEO Collector to emitter voltage

Contextual Info: 2SD1026 T15U0 Si HPN'jf—[J> h > h ~ 7 > 'sZ ,$ /N P N Darlington Transistor H! Outline Dimensions 5.0±0-3 ¿3.3*°-2 2.0±o.3 Equivalent Circuit 2.4±o-3 oC 0.65 ±m B o- U n it! mm Case : M T0-3P M/Vv-MA/V-' -6 k n Si?4& m ~2Qon i E Absolute Max. Ratings