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JRH Electronics MTMM-120-02-S-D-105 2MM TERMINAL STRIP
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DigiKey	MTMM-120-02-S-D-105	Bulk			1	1 $15.84 10 $14.636 100 $9.8364 1000 $9.8364 10000 $9.8364	Buy Now
Samtec Inc MTMM-120-02-S-D-105 2MM TERMINAL STRIP Free Sample
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DigiKey	MTMM-120-02-S-D-105	Bulk			1	1 $8.71 10 $8.71 100 $8.71 1000 $8.71 10000 $8.71	Buy Now
Avnet Americas	MTMM-120-02-S-D-105	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	MTMM-120-02-S-D-105					1 $7.14 10 $6.76 100 $5.03 1000 $3.25 10000 $2.25	Get Quote
Newark	MTMM-120-02-S-D-105	Bulk			1	1 $9.24 10 $8.86 100 $7.32 1000 $5.4 10000 $5.13	Buy Now
Powell Electronics	MTMM-120-02-S-D-105		99		1	1 $8.71 10 $8.05 100 $5.41 1000 $5.41 10000 $5.41	Buy Now

Master Electronics	MTMM-120-02-S-D-105					1 - 10 $9.43 100 $6.06 1000 $3.68 10000 $3.68	Buy Now
Sager	MTMM-120-02-S-D-105		150		1	1 $7.14 10 $6.76 100 $5.03 1000 $4.44 10000 $4.44	Buy Now
Samtec Inc MTMM-110-02-S-D-105 CONN HEADER VERT 20POS 2MM Free Sample
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DigiKey	MTMM-110-02-S-D-105	Bulk			1	1 $4.58 10 $4.58 100 $4.58 1000 $4.58 10000 $4.58	Buy Now
Avnet Americas	MTMM-110-02-S-D-105	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	MTMM-110-02-S-D-105					1 $3.76 10 $3.76 100 $2.75 1000 $2.22 10000 $1.13	Get Quote
Newark	MTMM-110-02-S-D-105	Bulk			1	1 $4.94 10 $4.71 100 $3.95 1000 $2.84 10000 $2.56	Buy Now
Powell Electronics	MTMM-110-02-S-D-105		244		1	1 $4.58 10 $4.58 100 $3.67 1000 $2.71 10000 $2.71	Buy Now

Master Electronics	MTMM-110-02-S-D-105					1 - 10 $5.27 100 $4.09 1000 $2.52 10000 $1.19	Buy Now
Sager	MTMM-110-02-S-D-105		370		1	1 $3.76 10 $3.76 100 $2.75 1000 $2.22 10000 $2.22	Buy Now
JRH Electronics MTMM-110-02-S-D-105 PIN HEADER, BOARD-TO-BOARD, 2 MM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MTMM-110-02-S-D-105	Bulk			1	1 $8.33 10 $8.33 100 $6.6727 1000 $4.92728 10000 $4.92728	Buy Now
Samtec Inc MTMM-104-02-S-D-105 Conn Unshrouded HDR 8 POS 2mm Solder ST Through Hole - Bulk (Alt: MTMM-104-02-S-D-10) Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	MTMM-104-02-S-D-105	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Master Electronics	MTMM-104-02-S-D-105					1 - 10 - 100 $1.08 1000 $0.927 10000 $0.927	Buy Now
Sager	MTMM-104-02-S-D-105					1 - 10 - 100 - 1000 - 10000 -	Buy Now

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2SD105 Datasheets (85)

Part	Manufacturer	Description	Datasheet Type	PDF
2SD105	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF
2SD105	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SD105	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SD105	Unknown	Cross Reference Datasheet	Scan	PDF
2SD105	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SD105	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SD105	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2SD105	Unknown	The Japanese Transistor Manual 1981	Scan	PDF
2SD105	Unknown	Discontinued Transistor Data Book 1975	Scan	PDF
2SD105	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SD105	Unknown	Vintage Transistor Datasheets	Scan	PDF
2SD1050	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SD1050	Unknown	The Japanese Transistor Manual 1981	Scan	PDF
2SD1050	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF

2SD1050K	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2SD1050K	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SD1051	Panasonic	NPN Transistor	Original	PDF
2SD1051	Panasonic	Silicon NPN epitaxial planer type transistor	Original	PDF
2SD1051	Panasonic	Silicon NPN epitaxial planer type	Original	PDF
2SD1051	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF

2SD105 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SD1051 Abstract: 2SB819 Text: Transistor 2SD1051 Silicon NPN epitaxial planer type For low-frequency power amplification Complementary to 2SB819 Unit: mm 6.9±0.1 1.5 1.0 0.85 4.5±0.1 4.1±0.2 0. 7 2.4±0.2 2.0±0.2 3.5±0.1 ● High collector to emitter voltage VCEO. Large collector power dissipation PC.	Original	PDF	2SD1051 2SB819 2SD1051 2SB819
2SB187 Abstract: 2SB178 2sd118 2SD188 2SD128 2SD111 2SB178A 2SD123 2SD104 2SD105 Text: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc Tj (V) (V) (mA) (mW) (ºC) 2SD101 80 6 600 250 75 2SD102 110 10 3A 25W(Tc=25ºC) 150 2SD103 80 10 3A 25W(Tc=25ºC) 150 2SD104 20 6 400 150 75 2SD105 20 6 400 150 75 2SD106 2SD107 80 10 5A 50W(Tc=25ºC) 150	Original	PDF	2SD101 2SD102 2SD103 2SD104 2SD105 2SD106 2SD107 2SD108 2SD109 2SD110 2SB187 2SB178 2sd118 2SD188 2SD128 2SD111 2SB178A 2SD123 2SD104 2SD105
Untitled Abstract: No abstract text available Text: Transistors 2SB0819 2SB819 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1051 Unit: mm 4.1±0.2 2.0±0.2 2.4±0.2 (0.85) 0.45±0.05 Parameter Symbol Rating Unit VCBO −50 V Collector-emitter voltage (Base open)	Original	PDF	2SB0819 2SB819) 2SD1051
2sd1051 Abstract: 2SB0819 2SB819 Text: Transistors 2SB0819 2SB819 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1051 Unit: mm 2.5±0.1 Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current	Original	PDF	2SB0819 2SB819) 2SD1051 2sd1051 2SB0819 2SB819
2sd1051 Abstract: 2SB0819 2SB819 japanese transistor manual Text: Transistor 2SB0819 2SB819 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD1051 Unit: mm 2.5±0.1 (1.0) R 0.7 4.5±0.1 R 0.9 4.1±0.2 ● High collector to emitter voltage VCEO. Large collector power dissipation PC.	Original	PDF	2SB0819 2SB819) 2SD1051 2sd1051 2SB0819 2SB819 japanese transistor manual
2sd1051 Abstract: 2SB0819 2SB819 Text: Transistors 2SD1051 Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0819 2SB819 Unit: mm 2.5±0.1 (1.0) 4.1±0.2 2.0±0.2 R 0.7 4.5±0.1 R 0.9 2.4±0.2 • High collector-emitter voltage (Base open) VCEO • Low collector power dissipation PC	Original	PDF	2SD1051 2SB0819 2SB819) 2sd1051 2SB0819 2SB819
Untitled Abstract: No abstract text available Text: Transistors 2SB0819 2SB819 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1051 Unit: mm 2.5±0.1 Parameter Symbol Rating Unit VCBO −50 V Collector-emitter voltage (Base open) VCEO −40 V VEBO −5 V Collector current	Original	PDF	2SB0819 2SB819) 2SD1051
583 transistor Abstract: 2sd1051 2SB0819 2SB819 Text: Transistor 2SD1051 Silicon NPN epitaxial planer type For low-frequency power amplification Complementary to 2SB0819 2SB819 Unit: mm 2.5±0.1 6.9±0.1 (1.0) 4.5±0.1 3.5±0.1 R 0.9 R 0.7 4.1±0.2 2.0±0.2 ● High collector to emitter voltage VCEO. Large collector power dissipation PC.	Original	PDF	2SD1051 2SB0819 2SB819) 583 transistor 2sd1051 2SB0819 2SB819
2sd1051 Abstract: 2SB0819 2SB819 Text: Transistors 2SD1051 Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0819 2SB819 Unit: mm • Absolute Maximum Ratings Ta = 25°C Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current	Original	PDF	2SD1051 2SB0819 2SB819) 2sd1051 2SB0819 2SB819
583 transistor Abstract: No abstract text available Text: Transistor 2SD1051 Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0819 2SB819 Unit: mm 2.5±0.1 6.9±0.1 (1.0) 4.5±0.1 3.5±0.1 R 0.9 R 0.7 4.1±0.2 2.0±0.2 ● High collector to emitter voltage VCEO. Large collector power dissipation PC.	Original	PDF	2SD1051 2SB0819 2SB819) 583 transistor
2sd1051 Abstract: 2SB0819 2SB819 Text: Transistors 2SB0819 2SB819 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1051 Unit: mm 4.1±0.2 2.0±0.2 2.4±0.2 (0.85) 0.45±0.05 Parameter Symbol Rating Unit VCBO −50 V Collector-emitter voltage (Base open)	Original	PDF	2SB0819 2SB819) 2SD1051 2sd1051 2SB0819 2SB819
2SD1056 Abstract: high power free wheeling diode Text: 2SD1056 FUJI POWER TRANSISTOR ＮＰＮ三重拡散プレーナ形ハイパワーダーリントン TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON 高耐圧大電流、スイッチング用 HIGH VOLTAGE,HIGH CURRENT,SWITCHING 外形寸法 : Outline Drawings	Original	PDF	2SD1056 2SD1056 high power free wheeling diode
japanese transistor manual Abstract: 2sd1051 hFE is transistor to-220 2SB0819 2SB819 Text: Transistors 2SD1051 Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0819 2SB819 Unit: mm 2.5±0.1 (1.0) R 0.9 2.4±0.2 • Absolute Maximum Ratings Ta = 25°C (0.85) Symbol Rating Unit VCBO 50 V Collector-emitter voltage (Base open)	Original	PDF	2SD1051 2SB0819 2SB819) japanese transistor manual 2sd1051 hFE is transistor to-220 2SB0819 2SB819
2SB0819 Abstract: 2SB819 2SD1051 Text: Transistors 2SB0819 2SB819 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1051 Unit: mm 2.5±0.1 (1.0) R 0.9 2.4±0.2 (0.85) • Absolute Maximum Ratings Ta = 25°C Rating Unit VCBO −50 V Collector-emitter voltage (Base open)	Original	PDF	2SB0819 2SB819) 2SD1051 2SB0819 2SB819 2SD1051

2SD1758 Abstract: 2SB1240 96-217-B24 2SD1055 2SD1919 transistor 257 2SD1227M 2SB1188 2SB911 transistor 2SD1862 Text: Transistors Medium Power Transistor 32V, 2A 2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 / 2SD1919 / 2SD1227M FFeatures 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 / 2SB891F / 2SB822 / 2SB1277 / 2SB911M	Original	PDF	2SD1766 2SD1758 2SD1862 2SD1055 2SD1919 2SD1227M 2SB1188 2SB1182 2SB1240 2SB891F 96-217-B24 transistor 257 2SD1227M 2SB911 transistor 2SD1862
2SB819 Abstract: 2SD1051 Text: Transistor 2SB819 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD1051 Unit: mm 6.9±0.1 1.0 4.5±0.1 7 0. 0.85 4.1±0.2 ● High collector to emitter voltage VCEO. Large collector power dissipation PC. M type package allowing easy automatic and manual insertion as	Original	PDF	2SB819 2SD1051 2SB819 2SD1051
2SD1055 Abstract: ITS40 sb822 2SD1919 Text: 2SD1055/2SD1919 /T r a n s is to r s 2SD1055 x£°$yyJl'yis-tMNPN y'J =i> Epitaxial Planar NPN Silicon Transistors 41^ ^ i S llliffl/M edium Power Amp. • ^•}fi‘+ > i0 /D im e n s io n s U n it : mm 1) FTR / f .y T - v i- T , I c p = 2 .5 A Pc = 0 . 7 5 W ( 7 ) * a i * ? i . 5 „	OCR Scan	PDF	2SD1055/2SD1919 2SD1055 822/2S 2SB882, 2SB1277. ym2000 2SD1055 ITS40 sb822 2SD1919
2SD1052A Abstract: No abstract text available Text: 2SD1052A SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS . ; o.3Ma x . 0 ae±a8 FEATURES : . High DC Current Gain of 400 to 1200 at L£ P - V c e =5V, IC=0.5A . Lov TcE sat of 1-OV (MAX.) at IC=1A, IB=0.02A . Collector Power Dissipation of 30W at Tc=25°C	OCR Scan	PDF	2SD1052A 2SD1052A
2SD1766 Abstract: 2SD1919 2SD1862 05SL 2SD1227M 96-217-B24 2SD1055 Text: Transistors Medium Power Transistor 32V, 2A 2SD1766/2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/2SD1227M •F e a tu re s 1) ►External dim ensions (Units: mm ) L O W VcE(sat). VcEisat) = 0 .1 6V (Typ.) 2SD1766 (Ic / I b = 2 A /0 .2 A ) 2) •±8;f 4.5: 6 ±0.1	OCR Scan	PDF	2SD1766/2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/2SD1227M SC-62 2SD1766 2SD1758 2SD1766) 2SD1758) 2SD1862, 2SD1227M) 2SD1189F) 2SD1766 2SD1919 2SD1862 05SL 2SD1227M 96-217-B24 2SD1055
Untitled Abstract: No abstract text available Text: 7b TOSHIBA { D I S C R E T E / OPTO> 9 9 7 2 5 T O S H I B A C D I S C R E T 2SD1052 E / O P T O DE J l G T 7 a S G b o L Ö '7 8<t 9 □□□7ñ4T L, J $ - af ü SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS) Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS .	OCR Scan	PDF	2SD1052
2SD1052 Abstract: AC75 Text: ~5Í TOSHIBA OISCRETE/OPTOD- 9097250 TOSHIBA DE DI SCRET E / O P T O 2SD1052 DDD7fl4«i 07 8^ 9 S IL IC O N NPN T R IP L E D IF F U SE D TYPE (PCT PROCESS) Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS . 1 Q 3 MAX J2f5 6 t Q 3 FEATURES : . High DC Current Gain of 250 to 750 at	OCR Scan	PDF	2SD1052 AC75
Untitled Abstract: No abstract text available Text: 2SD1052A SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS . 0 3.6±az FEATURES : Of X . High DC Current Gain of 400 to 1200 at m V c E = 5V, IC=0.5A . Low VcE(sat) of I.OV (MAX.) at Ic=lA, Ig=0.02A . Collector Power Dissipation of 30V at Tc=25°C	OCR Scan	PDF	2SD1052A
2SD1189F Abstract: 2SD1919 2SB822 2SD1758 2SD1766 two transistors 2SD1055 2sd1227m 2sd1055r ll1000 Text: Transistors Medium Power Transistor 32V, 2A 2SD1766/2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/2SD1227M •F e a tu re s 1) • E x t e r n a l d im e n s io n s (U nits: m m ) LOW VcE(sat). VcE(sat) = 0 .1 6V (Typ.) 2SD1766 (Ic / I b = 2 A /0 .2 A ) 2) 1 6 ± 0.1	OCR Scan	PDF	2SD1766/2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/2SD1227M 2SB1188/2SB1182/2SB1240/2SB 2SB822/ 2SB1277/2SB911M 2SD1758 SC-63 2SD1189F O-126FP 2SD1919 2SB822 2SD1766 two transistors 2SD1055 2sd1227m 2sd1055r ll1000
2SD1056 Abstract: 2SD1056 EQUIVALENT Text: 2SD1056 \| ± ^ 7 -F 7 > y ^ NPN = n$km -7i'-1-M TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON ÜÜfEi, HIGE VOLTAGE, HIGH CURRENT, SWITCHING : Features • hFE^iiV.' High D. C. current gain • hFE<7 U—7r U-r-<’i'J:v.' • ASO '*/SL' • n S it ilt t	OCR Scan	PDF	2SD1056 rC-19 TB-30Ã 200mA 50//s 2SD1056 2SD1056 EQUIVALENT

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2SD105 Price and Stock

JRH Electronics MTMM-120-02-S-D-105

Samtec Inc MTMM-120-02-S-D-105

Samtec Inc MTMM-110-02-S-D-105

JRH Electronics MTMM-110-02-S-D-105

Samtec Inc MTMM-104-02-S-D-105

2SD105 Datasheets (85)

2SD105 Datasheets Context Search

2SD1051

2SB187

Untitled

2sd1051

2sd1051

2sd1051

Untitled

583 transistor

2sd1051

583 transistor

2sd1051

2SD1056

japanese transistor manual

2SB0819

2SD1758

2SB819

2SD1055

2SD1052A

2SD1766

Untitled

2SD1052

Untitled

2SD1189F

2SD1056