2SD104 Search Results

2sd1047 equivalent

Abstract: 2SB817 2SD1047 2SB817 2SD1047
Contextual Info: Inchange Semiconductor Product Specification 2SB817 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SD1047 APPLICATIONS ・140V/12A AF 60W output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base

2SB816

Abstract: 2SD1046
Contextual Info: SavantIC Semiconductor Product Specification 2SB816 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type 2SD1046 ·Wide area of safe operation APPLICATIONS ·For LF Power Amplifier, 50W Output Large Power Switching Applications

2SD1046

Abstract: 2SB816 50w LF amplifier
Contextual Info: SavantIC Semiconductor Product Specification 2SD1046 Silicon NPN Power Transistors • DESCRIPTION ·With TO-3PN package ·Complement to type 2SB816 ·Wide area of safe operation APPLICATIONS ·For LF power amplifier, 50W output large power switching applications

2SB817

Abstract: 2SD1047 2SB817 2SD1047 2sd1047 equivalent 2SD1047F 4017 12AAF
Contextual Info: Ordering number:ENN680F PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SB817/2SD1047 140V/12A AF 60W Output Applications Package Dimensions unit:mm 2022A [2SB817/2SD1047] 15.6 14.0 3.2 3.5 4.8 2.0 1.2 15.0 20.0 • Capable of being mounted easily because of onepoint fixing type plastic molded package Interchangeable with TO-3 .

2sD1047

Abstract: bf 695 transistor model 2SD1047P A/2SD1047P. SPICE PARAMETER
Contextual Info: 2SD1047P SPICE PARAMETER NPN Bipolar Transistor model : Gummel-Poon Parameter Value IS 5.000p NF 1 IKF 5.3 NE 2 NR 1 IKR 1.5 NC 2 IRB 240.0m RE 48.50m XTB XTI 3 VJE 680.0m TF 9n VTF 10 PTF VJC 550.0m XCJC 1 FC 500.0m AF 1 Temp = Date : Unit A A A A Ohm V sec

Contextual Info: Ordering number : EN694G 2SB815/2SD1048 Bipolar Transistor http://onsemi.com – 15V, (–)0.7A, Low VCE(sat), (PNP)NPN Single CP Features • • Ultrasmall package allows miniaturization in end products Large current capacity (IC=0.7A) and low-saturation voltage

2SB187

Abstract: 2SB178 2sd118 2SD188 2SD128 2SD111 2SB178A 2SD123 2SD104 2SD105
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc Tj (V) (V) (mA) (mW) (ºC) 2SD101 80 6 600 250 75 2SD102 110 10 3A 25W(Tc=25ºC) 150 2SD103 80 10 3A 25W(Tc=25ºC) 150 2SD104 20 6 400 150 75 2SD105 20 6 400 150 75 2SD106 2SD107 80 10 5A 50W(Tc=25ºC) 150

2SB815

Abstract: 2SD200 2SD100 2SD1048 D109 ITR08396 ITR08397 ITR08398 ITR08399 2SB815-6
Contextual Info: 注文コード No. N 6 9 4 F 2SB815 / 2SD1048 No. N694F 41301 半導体ニューズ No.N694E とさしかえてください。 2SB815 / 2SD1048 特長 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ 低周波一般増幅用 ・超小型パッケージのためセットの小型化 , 薄型化が可能である。

Contextual Info: 2SD1049 N P N H l t î £ | f c : 7V —^ Ì~ M TRIPLE DIFFUSED PLANER TYPE * * * , HIGH CURRENT, h i g h s p e e d s w i t c h i n g • I O utline D raw ing s 4 .5 ' c 15.5 * i Features • XWM, Jiii&X'f'yT-yy’ • SPi High cu rren t, high speed sw itching

Contextual Info: 2SD1040 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120è V(BR)CBO (V)150 I(C) Max. (A)15 Absolute Max. Power Diss. (W)120 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SD1049

Contextual Info: Product Specification www.jmnic.com 2SD1049 Silicon NPN Power Transistors • DESCRIPTION ・With TO-3PN package ・High current, ・High speed switching ・High reliability APPLICATIONS ・Switching regulators ・Motor controls ・High frequency inverters

50w LF amplifier

Abstract: 2SB816 2SD1046
Contextual Info: Inchange Semiconductor Product Specification 2SB816 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SD1046 ・Wide area of safe operation APPLICATIONS ・For LF Power Amplifier, 50W Output Large Power Switching Applications

transistor 2sd1047

Abstract: 2SB817 2sd1047 605K transistor 1047 2SB817 2SD1047 2sb transistor transistor 2sb817 817 c w
Contextual Info: O rdering num ber: EN 680F 9 i 2SB817/2SD1047 N0.68OF 2SB817 : PNP Epitaxial P lanar Silicon Transistor 2SD1047 : NPN Triple Diffused Planar Silicon Transistor I 140V/12A, AF 60W Output Applications F e a tu re s • Capable of being mounted easily because of one-point fixing type plastic molded package

b816

Abstract: D1046 ic 710 2SB816 SD1046 SANYO ST power amp 50w
Contextual Info: Ordering number: EN 677D 2SB816/2SD1046 S ilico n PNP/NPN Planar Type Transistor For LF Power Amp, 50W O utput; Large Power S w itc h in g Features • Capable of being mounted easily because of one-point fixing type plastic molded package Interchangeable with TO-3

101B

Abstract: 2SD1049 SC-65 T151 T760 T930
Contextual Info: 2SD1049 N P N H lI Î Æ if c y L — -tffc T R IP L E D IF F U S E D P LA N ER T Y P E * « *, HIGH CURREN T, HIGH S P E E D S W IT C H IN G • : Outline Draw ings 15.5" ¿a?'0’ Features • High current, high speed switching • High reliability 2.2 l& l

2SB817

Abstract: 2SD1047 2s8817 transistor 2sd1047 transistor 2sb817
Contextual Info: Æ&m o s p e c PNP SILICON POWER TRANSISTORS PNP 2SB817 2SB817 transistor is designed for use in general purpose power amplifier,application FEATURES: * Collector-Emitter Voltage V CE0= 140V Min * DC Current Gain hFE= 60-200@ lc= 1.0A * Complement to 2SD1047

2SD1047

Abstract: 2sd1047 equivalent 2SB817 2SD1047 2SB817
Contextual Info: SavantIC Semiconductor Product Specification 2SD1047 Silicon NPN Power Transistors DESCRIPTION •Complement to type 2SB817 ·With TO-3PN package APPLICATIONS ·Power amplification ·Low frequency and audio band PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

2SB817

Abstract: 2SD1047 12AAF
Contextual Info: SavantIC Semiconductor Product Specification 2SB817 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type 2SD1047 APPLICATIONS ·140V/12A AF 60W output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base

50w LF amplifier

Abstract: amplifier 50W 2SB816 2SD1046
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB816 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD1046 APPLICATIONS

Contextual Info: 2SD1049 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH CURRENT,HIGH SPEED SWITCHING Outline Drawings TO-3P Features High current,High speed switching High reliability Applications Switching regulators Motor controls High frequency inverters General purpose power amplifiers

2SB817P

Abstract: 2SD1047P
Contextual Info: 注文コード No. N 6 5 7 2 2SB817P/2SD1047P No. N 6 5 7 2 82200 新 2SB817P / 2SD1047P 特長 2SB817P : PNP エピタキシァルプレーナ形シリコントランジスタ 2SD1047P : NPN 三重拡散プレーナ形シリコントランジスタ 140V / 12A, AF80W 出力用

2SD1047C

Abstract: 2sb817c 2SB817
Contextual Info: 2SB817C / 2SD1047C Ordering number : ENA0188 2SB817C / 2SD1047C PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 140V / 12A, AF 80W Output Applications Features • • • Large current capacitance. Wide ASO and high durability against breakdown.

2SB817 2SD1047

Abstract: 2SB817 2SD1047
Contextual Info: Ordering number : ENN680F SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SB817/2SD1047 140V/12A AF 60W Output Applications Features • Capable of being mounted easily because of one-point fixing type plastic molded package

2SD1047

Abstract: 2SB817 2SD1047 transistor
Contextual Info: ÆàMOSPEC NPN SILICON POWER TRANSISTORS NPN 2SD1047 2SD1047 transistor is designed for use in general purpose Power amplifier,application FEATURES: * Collector-Emitter Voltage VCEO= 140V Min * DC Current Gain hFE= 60-200@lc= 1.0A * Complement to 2SB817 12 AMPERE