2SD105 Search Results

2SD1051

Abstract: 2SB819
Contextual Info: Transistor 2SD1051 Silicon NPN epitaxial planer type For low-frequency power amplification Complementary to 2SB819 Unit: mm 6.9±0.1 1.5 1.0 0.85 4.5±0.1 4.1±0.2 0. 7 2.4±0.2 2.0±0.2 3.5±0.1 ● High collector to emitter voltage VCEO. Large collector power dissipation PC.

2SB187

Abstract: 2SB178 2sd118 2SD188 2SD128 2SD111 2SB178A 2SD123 2SD104 2SD105
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc Tj (V) (V) (mA) (mW) (ºC) 2SD101 80 6 600 250 75 2SD102 110 10 3A 25W(Tc=25ºC) 150 2SD103 80 10 3A 25W(Tc=25ºC) 150 2SD104 20 6 400 150 75 2SD105 20 6 400 150 75 2SD106 2SD107 80 10 5A 50W(Tc=25ºC) 150

Contextual Info: Transistors 2SB0819 2SB819 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1051 Unit: mm 4.1±0.2 2.0±0.2 2.4±0.2 (0.85) 0.45±0.05 Parameter Symbol Rating Unit VCBO −50 V Collector-emitter voltage (Base open)

2sd1051

Abstract: 2SB0819 2SB819
Contextual Info: Transistors 2SB0819 2SB819 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1051 Unit: mm 2.5±0.1 Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current

2sd1051

Abstract: 2SB0819 2SB819 japanese transistor manual
Contextual Info: Transistor 2SB0819 2SB819 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD1051 Unit: mm 2.5±0.1 (1.0) R 0.7 4.5±0.1 R 0.9 4.1±0.2 ● High collector to emitter voltage VCEO. Large collector power dissipation PC.

2sd1051

Abstract: 2SB0819 2SB819
Contextual Info: Transistors 2SD1051 Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0819 2SB819 Unit: mm 2.5±0.1 (1.0) 4.1±0.2 2.0±0.2 R 0.7 4.5±0.1 R 0.9 2.4±0.2 • High collector-emitter voltage (Base open) VCEO • Low collector power dissipation PC

2SD1055

Abstract: ITS40 sb822 2SD1919
Contextual Info: 2SD1055/2SD1919 /T r a n s is to r s 2SD1055 x£°$*yyJl'yis-tMNPN y'J =i> Epitaxial Planar NPN Silicon Transistors 41^ ^ i S llliffl/M edium Power Amp. • ^•}fi‘+ > i0 /D im e n s io n s U n it : mm 1) FTR / f .y *T - v i- T , I c p = 2 .5 A Pc = 0 . 7 5 W ( 7 ) * a i * ? i . 5 „

2SD1052A

Contextual Info: 2SD1052A SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS . ; o.3Ma x . 0 ae±a8 FEATURES : . High DC Current Gain of 400 to 1200 at L£ P - V c e =5V, IC=0.5A . Lov TcE sat of 1-OV (MAX.) at IC=1A, IB=0.02A . Collector Power Dissipation of 30W at Tc=25°C

Contextual Info: Transistors 2SB0819 2SB819 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1051 Unit: mm 2.5±0.1 Parameter Symbol Rating Unit VCBO −50 V Collector-emitter voltage (Base open) VCEO −40 V VEBO −5 V Collector current

583 transistor

Abstract: 2sd1051 2SB0819 2SB819
Contextual Info: Transistor 2SD1051 Silicon NPN epitaxial planer type For low-frequency power amplification Complementary to 2SB0819 2SB819 Unit: mm 2.5±0.1 6.9±0.1 (1.0) 4.5±0.1 3.5±0.1 R 0.9 R 0.7 4.1±0.2 2.0±0.2 ● High collector to emitter voltage VCEO. Large collector power dissipation PC.

2SD1766

Abstract: 2SD1919 2SD1862 05SL 2SD1227M 96-217-B24 2SD1055
Contextual Info: Transistors Medium Power Transistor 32V, 2A 2SD1766/2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/2SD1227M •F e a tu re s 1) ►External dim ensions (Units: mm ) L O W VcE(sat). VcEisat) = 0 .1 6V (Typ.) 2SD1766 (Ic / I b = 2 A /0 .2 A ) 2) •±8;f 4.5: 6 ±0.1

2sd1051

Abstract: 2SB0819 2SB819
Contextual Info: Transistors 2SD1051 Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0819 2SB819 Unit: mm • Absolute Maximum Ratings Ta = 25°C Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current

Contextual Info: 7b TOSHIBA { D I S C R E T E / OPTO> 9 9 7 2 5 T O S H I B A C D I S C R E T 2SD1052 E / O P T O DE J l G T 7 a S G b o L Ö '7 8<t 9 □□□7ñ4T L, J $ - af ü SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS) Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS .

2SD1052

Abstract: AC75
Contextual Info: ~5Í TOSHIBA OISCRETE/OPTOD- 9097250 TOSHIBA DE DI SCRET E / O P T O 2SD1052 DDD7fl4«i 07 8^ 9 S IL IC O N NPN T R IP L E D IF F U SE D TYPE (PCT PROCESS) Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS . 1 Q 3 MAX J2f5 6 t Q 3 FEATURES : . High DC Current Gain of 250 to 750 at

2sd1051

Abstract: 2SB0819 2SB819
Contextual Info: Transistors 2SB0819 2SB819 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1051 Unit: mm 4.1±0.2 2.0±0.2 2.4±0.2 (0.85) 0.45±0.05 Parameter Symbol Rating Unit VCBO −50 V Collector-emitter voltage (Base open)

2SD1056

Abstract: high power free wheeling diode
Contextual Info: 2SD1056 FUJI POWER TRANSISTOR ＮＰＮ三重拡散プレーナ形 ハイパワーダーリントン TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON 高耐圧大電流、スイッチング用 HIGH VOLTAGE,HIGH CURRENT,SWITCHING 外形寸法 : Outline Drawings

japanese transistor manual

Abstract: 2sd1051 hFE is transistor to-220 2SB0819 2SB819
Contextual Info: Transistors 2SD1051 Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0819 2SB819 Unit: mm 2.5±0.1 (1.0) R 0.9 2.4±0.2 • Absolute Maximum Ratings Ta = 25°C (0.85) Symbol Rating Unit VCBO 50 V Collector-emitter voltage (Base open)

Contextual Info: 2SD1052A SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS . 0 3.6±az FEATURES : Of X . High DC Current Gain of 400 to 1200 at m V c E = 5V, IC=0.5A . Low VcE(sat) of I.OV (MAX.) at Ic=lA, Ig=0.02A . Collector Power Dissipation of 30V at Tc=25°C

2SD1189F

Abstract: 2SD1919 2SB822 2SD1758 2SD1766 two transistors 2SD1055 2sd1227m 2sd1055r ll1000
Contextual Info: Transistors Medium Power Transistor 32V, 2A 2SD1766/2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/2SD1227M •F e a tu re s 1) • E x t e r n a l d im e n s io n s (U nits: m m ) LOW VcE(sat). VcE(sat) = 0 .1 6V (Typ.) 2SD1766 (Ic / I b = 2 A /0 .2 A ) 2) 1 6 ± 0.1

2SD1056

Abstract: 2SD1056 EQUIVALENT
Contextual Info: 2SD1056 | ± ^ 7 -F 7 > y ^ NPN = n$km -7i'-1-M TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON ÜÜfEi, HIGE VOLTAGE, HIGH CURRENT, SWITCHING : Features • hFE^iiV.' High D. C. current gain • hFE<7 U—7r U-r-<*’i'J:v.' • ASO *'*/SL' • n S it ilt t

2SB0819

Abstract: 2SB819 2SD1051
Contextual Info: Transistors 2SB0819 2SB819 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1051 Unit: mm 2.5±0.1 (1.0) R 0.9 2.4±0.2 (0.85) • Absolute Maximum Ratings Ta = 25°C Rating Unit VCBO −50 V Collector-emitter voltage (Base open)

transistor

Abstract: 2sb1240 2SD1189F SD1227 2SB822 2SB1277 2SB1182 transistor 2SB1240 silicon pnp transistor transistor 2A
Contextual Info: Transistors Medium power Transistor *32V,*2A 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M.

2SD1758

Abstract: 2SB1240 96-217-B24 2SD1055 2SD1919 transistor 257 2SD1227M 2SB1188 2SB911 transistor 2SD1862
Contextual Info: Transistors Medium Power Transistor 32V, 2A 2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 / 2SD1919 / 2SD1227M FFeatures 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 / 2SB891F / 2SB822 / 2SB1277 / 2SB911M

2SB819

Abstract: 2SD1051
Contextual Info: Transistor 2SB819 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD1051 Unit: mm 6.9±0.1 1.0 4.5±0.1 7 0. 0.85 4.1±0.2 ● High collector to emitter voltage VCEO. Large collector power dissipation PC. M type package allowing easy automatic and manual insertion as