2SD1267 Search Results

2SB942

Abstract: 2SB942A 1267A
Contextual Info: Inchange Semiconductor Product Specification 2SB942 2SB942A Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High forward current transfer ratio hFE which has satisfactory linearity ・Low collector saturation voltage ・Complement to type 2SD1267/1267A

2SB0942

Abstract: 2SB0942A 2SD1267 2SD1267A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complimentary to 2SB0942 and 2SB0942A Unit: mm 10.0±0.2 4.2±0.2 M Di ain sc te on na tin nc

te 1819

Abstract: 2SD1878 2SC4211 2SD1649 2sd1856 1815 2SC4723 2sd1707 2SD1929 2SC4331
Contextual Info: - a ¡g tt £ Manuf. Type So. H £ SANVO 2SD1667 IE TOSHIBA Q m jtec 2SD1406 ÍL HITACHI Ü ± il FUJITSU T MATSUSHITA 2SD2107 2SD1267 2SD2105 2SD1445A o MITSUBISHI 251 A ROHM 2SÜ1778 2SD 1813 ¡L 2SD 1814 S AI 2SD 1815 J = ft 2SD 1816 / = n 2SD 1817 X =

2SD1267

Abstract: 2SD1267A 2SD1268 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274
Contextual Info: - 242 - Ta=25<C, *EP(äTc=25<C s ít 2SD1267 2SD1267A 2SD1268 2SD1269 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274 2SD1274A 2SD1274B 2SD1275 2SD1275A 2SD1276 2SD1276A 2SD1277 2SD1277A 2SD1279 2SD1280 2SD1286 2SD1286-Z 2SD1288 2SD1289 2SD1290

2SB942

Abstract: 2SB942A 2SD1267 2SD1267A
Contextual Info: Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB942 and 2SB942A Unit: mm • Features Parameter TC=25˚C Symbol Collector to 2SD1267 base voltage 2SD1267A Collector to 2SD1267 Ratings

Contextual Info: 2SD1267AP Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)4 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)400ux @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)4

2SB942

Abstract: 2SB942A
Contextual Info: JMnic Product Specification 2SB942 2SB942A Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High forward current transfer ratio hFE which has satisfactory linearity ・Low collector saturation voltage ・Complement to type 2SD1267/1267A

Contextual Info: Power T ransistors 2SD1267, 2SD1267A 2SD1267, 2SD1267A Silicon NPN Triple-Diffused Planar Type Package Dimensions Power Amplifier Complementary Pair with 2SB942, 2SB942A U n it ! m m 4 .4 m a x . • Features 2.9max. • High DC current gain hFE and good linearity

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0942 (2SB942), 2SB0942A (2SB942A) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1267, 2SD1267A 16.7±0.3 • High forward current transfer ratio hFE which has satisfactory linearity

SC671

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complimentary to 2SB0942 and 2SB0942A Unit: mm Parameter Collector-base voltage 2SD1267 (Emitter open)

2SD1267

Abstract: 2SD1267A
Contextual Info: Inchange Semiconductor Product Specification 2SD1267 2SD1267A Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・High forward current transfer ratio hFE which has satisfactory linearity ・Low collector saturation voltage ・Complement to type 2SB942/942A

2SD1267A

Abstract: 2SB0942 2SB0942A 2SD1267
Contextual Info: Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB0942 and 2SB0942A Parameter Collector to base voltage 2SD1267 Collector to emitter voltage 2SD1267 Symbol Rating Unit VCBO 60 V 16.7±0.3

2SB0942

Abstract: 2SB0942A 2SB942 2SB942A 2SD1267 2SD1267A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0942 (2SB942), 2SB0942A (2SB942A) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1267, 2SD1267A 10.0±0.2 4.2±0.2 M Di ain sc te

2SB942

Abstract: 2SB942A 2SD1267 2SD1267A
Contextual Info: Power Transistors 2SB942, 2SB942A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1267 and 2SD1267A Unit: mm • Features Parameter TC=25˚C Symbol Collector to 2SB942 base voltage 2SB942A Collector to 2SB942 Ratings

Contextual Info: 2SD1267A Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)4 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)400ux @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)4

Contextual Info: 2SD1267AQ Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)4 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)400ux @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)4

2SB942A

Abstract: 1267A 2SB942
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB942 2SB942A DESCRIPTION •With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage ·Complement to type 2SD1267/1267A

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0942 (2SB942), 2SB0942A (2SB942A) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1267, 2SD1267A • Features 4.2±0.2 5.5±0.2

2SB0942

Abstract: 2SB0942A 2SB942 2SB942A 2SD1267 2SD1267A
Contextual Info: Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB0942 2SB942 and 2SB0942A (2SB942A) Unit: mm • Features Parameter (TC=25˚C) Symbol Collector to 2SD1267 base voltage 2SD1267A Collector to

2SB942

Abstract: 2SD1267 transistor 2sd1267
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB942 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -1.5V(Max)@IC= -4A ·Good Linearity of hFE ·Complement to Type 2SD1267 APPLICATIONS ·Designed for low-frequency power amplifications.

2SB0942

Abstract: 2SB0942A 2SB942 2SB942A 2SD1267 2SD1267A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0942 (2SB942), 2SB0942A (2SB942A) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1267, 2SD1267A 10.0±0.2 4.2±0.2 M Di ain sc te

2SD1267

Abstract: 2SD1267A
Contextual Info: SavantIC Semiconductor Product Specification 2SD1267 2SD1267A Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage ·Complement to type 2SB942/942A

J300B

Abstract: 2SB942 2SB942A 2SD12 2SD1267 2SD1267A 400Collector
Contextual Info: Pow er Tra n sisto rs 2SD1267, 2SD1267A 2SD1267, 2SD 1267A Silicon NPN Triple-Diffused Planar Type Package Dimensions Power Amplifier Complementary Pair with 2SB942, 2SB942A U nit ! mm 4.4m ax. • Features 2 .9 m a x . • H igh D C cu r re n t ga in I i f e

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complimentary to 2SB0942 and 2SB0942A Unit: mm Parameter Collector-base voltage 2SD1267 (Emitter open)