2SD1862 Search Results

2SD1862

Abstract: 2SB1240 2SB1182 2SB1188 2SD1758 2SD1766 T100
Contextual Info: 2SD1766 / 2SD1758 / 2SD1862 Transistors Medium Power Transistor 32V, 2A 2SD1766 / 2SD1758 / 2SD1862 zExternal dimensions (Unit : mm) 2SD1758 (3) 0.4 +0.1 −0.05 0.5±0.1 0.4±0.1 1.5±0.1 0.65±0.1 0.75 0.9 2.3±0.2 Abbreviated symbol : DB∗ ROHM : MPT3

2SD1758

Abstract: 2SB1240 2SB1182 2SB1188 2SD1766 2SD1862 T100
Contextual Info: 2SD1766 / 2SD1758 / 2SD1862 Transistors Medium power transistor 32V, 2A 2SD1766 / 2SD1758 / 2SD1862 !External dimensions (Units : mm) 2SD1758 1.0±0.2 (2) (3) 0.1 0.4 + −0.05 0.5±0.1 0.4±0.1 1.5±0.1 0.4±0.1 1.5±0.1 Abbreviated symbol : DB∗ ROHM : MPT3

NPN EPTAXIAL PLANAR

Abstract: s915 2SD1227M 2SB911M
Contextual Info: ROHM CO LTD NOE D ooosam h 7 > y 7s £ / T ransistors IRHM 3 2SD1227M/2SD1862 7^-2 7-2. / 2SD1227EVI X fcf £ v T7^ 7 ° U ~ ^ NPN v U □ > h 7 > V X i ? Power Amp. Eptaxial Planar NPN Silicon Transistors ^ O V lO O Z 1 P c = 1 W t * t l'o 2) VCE sat |=160mV Typ. (at 1A)

2SD1766

Abstract: 2SD1919 2SD1862 05SL 2SD1227M 96-217-B24 2SD1055
Contextual Info: Transistors Medium Power Transistor 32V, 2A 2SD1766/2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/2SD1227M •F e a tu re s 1) ►External dim ensions (Units: mm ) L O W VcE(sat). VcEisat) = 0 .1 6V (Typ.) 2SD1766 (Ic / I b = 2 A /0 .2 A ) 2) •±8;f 4.5: 6 ±0.1

1AM5

Abstract: 2SB1240 2SB1182 2SD1758 2SD1862
Contextual Info: Medium power transistor 32V, 2A 2SD1758 / 2SD1862 Dimensions (Units : mm) 2SD1862 6.5±0.2 5.1+0.2 −0.1 2.5±0.2 6.8±0.2 4.4±0.2 9.5±0.5 1.5 0.9 0.5±0.1 0.65±0.1 0.75 2.3+0.2 −0.1 2.5 Structure Epitaxial planar type NPN silicon transistor

Contextual Info: Medium power transistor 32V, 2A 2SD1758 / 2SD1862 Dimensions (Units : mm) 2SD1862 6.5±0.2 5.1+0.2 −0.1 2.5±0.2 6.8±0.2 4.4±0.2 9.5±0.5 1.5 0.9 0.5±0.1 0.65±0.1 0.75 2.3+0.2 −0.1 2.5 Structure Epitaxial planar type NPN silicon transistor

Contextual Info: h "7 > v 7, $ /T ra n sisto rs 2SD1227M/2SD1862 2SD1227M O C n iO fiO 4 11 : ^ ± i [t1if f l/ M e d iu m P ow er Amp. Eptaxial Planar NPN S ilico n Transistors Iw O fc • H M r H iH /D im e n s io n s U n it: mm sir yj v‘: v vu -r • *8:1 1) Pc= 1 W t * # l ' „

Contextual Info: Medium power transistor 32V, 2A 2SB1182 / 2SB1240 Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862. Dimensions (Unit : mm) 2SB1182 2SB1240 2.5±0.2 0.5±0.1 1.0 9.5±0.5 1.5 2.5 0.65±0.1

2SB1182

Abstract: 2SB1240 2SD1758 2SD1862
Contextual Info: Medium power transistor 32V, 2A 2SB1182 / 2SB1240 Dimensions (Unit : mm) Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862. 2SB1182 2SB1240 2.5±0.2 0.5±0.1 1.0 9.5±0.5 1.5 2.5 0.65±0.1

2SB1182

Abstract: 2SB1240 2SB1188 2SD1758 2SD1766 2SD1862 T100 302 ROHM
Contextual Info: Medium power transistor 32V, 2A 2SD1766 / 2SD1758 / 2SD1862 Dimensions (Unit : mm) 2SD1758 1.0±0.2 (2) (3) 0.1 0.4 + −0.05 0.5±0.1 0.4±0.1 1.5±0.1 0.9 2.3±0.2 3.0±0.2 Abbreviated symbol : DB∗ ROHM : MPT3 EIAJ : SC-62 0.65±0.1 0.75 2.3+0.2 −0.1

2SB1240

Contextual Info: 2SB1240 Transistor, PNP Features Dimensions Units : mm • available in ÀTV TV2 package • high power: Pq = I V J • low collector saturation voltage, typically VCE(sat) - 0.2 V at Ic/Ib = lA/—0.1 A complementary pair with 2SD1862 • 2SB1240 (ATV TV2)

Contextual Info: 2SD1766 / 2SD1758 / 2SD1862 Transistors Medium power transistor 32V, 2A 2SD1766 / 2SD1758 / 2SD1862 !External dimensions (Units : mm) 2SD1758 1.0±0.2 (2) (3) 0.1 0.4 + −0.05 0.5±0.1 0.4±0.1 1.5±0.1 0.4±0.1 1.5±0.1 Abbreviated symbol : DB∗ ROHM : MPT3

2SD1189F

Abstract: 2SD1919 2SB822 2SD1758 2SD1766 two transistors 2SD1055 2sd1227m 2sd1055r ll1000
Contextual Info: Transistors Medium Power Transistor 32V, 2A 2SD1766/2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/2SD1227M •F e a tu re s 1) • E x t e r n a l d im e n s io n s (U nits: m m ) LOW VcE(sat). VcE(sat) = 0 .1 6V (Typ.) 2SD1766 (Ic / I b = 2 A /0 .2 A ) 2) 1 6 ± 0.1

736 33

Abstract: 8069 2SD1862
Contextual Info: SPICE PARAMETER 2SD1862 by ROHM TR Div. * 2SD1862 NPN BJT model * Date: 2006/12/04 .MODEL 2SD1862 NPN + IS=600.00E-15 + BF=185.52 + VAF=33.033 + IKF=10 + ISE=600.00E-15 + NE=1.8069 + BR=73.093 + VAR=100 + IKR=75.250E-3 + ISC=3.4894E-12 + NC=1.2296 + NK=.43296

transistor

Abstract: 2sb1240 2SD1189F SD1227 2SB822 2SB1277 2SB1182 transistor 2SB1240 silicon pnp transistor transistor 2A
Contextual Info: Transistors Medium power Transistor *32V,*2A 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M.

2SD1758

Abstract: 2SB1240 96-217-B24 2SD1055 2SD1919 transistor 257 2SD1227M 2SB1188 2SB911 transistor 2SD1862
Contextual Info: Transistors Medium Power Transistor 32V, 2A 2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 / 2SD1919 / 2SD1227M FFeatures 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 / 2SB891F / 2SB822 / 2SB1277 / 2SB911M

2SD1878

Abstract: 2SB1240 2SD1853 2SD1855A 2SD1877 2SD188 2SD1851 2SD1852 2SD1854 2SD1855
Contextual Info: - 270 - <Ta=25"C, *EPÌÌTc=25'C fi <3 & Vq r o V) 2SD1851 2SD1852 2SD1853 2SD1854 2SD1855 2SD1855A 2SD1856 2SD1857 2SD1858 2SD1859 2SD1860 2SD1861 2SD1862 2SD1863 2 SDÌ8 64 2SD1865 2SD1866 2SD1867 2SD1868 2SD1869 2SD1870 2SD1876 2SD1877 2SD1878 2SD1879

2SB1182

Abstract: 2SB1240 2SB1188 2SD1758 2SD1766 2SD1862 T100
Contextual Info: 2SD1766 / 2SD1758 / 2SD1862 Transistors Medium Power Transistor 32V, 2A 2SD1766 / 2SD1758 / 2SD1862 zExternal dimensions (Unit : mm) 2SD1758 (3) 0.4 +0.1 −0.05 0.5±0.1 0.4±0.1 1.5±0.1 0.65±0.1 0.75 0.9 2.3±0.2 Abbreviated symbol : DB∗ ROHM : MPT3

2SD1862

Contextual Info: 2SD1862 Transistor, NPN Features Dimensions Units : mm • a v a ila b le in A T V T V 2 p a c k a g e • lo w c o lle c to r s a tu ra tio n v o lta g e , ty p ic a lly V CE(sal) = 0.16 V a t Ic / I b ~ I A /0 .1 A • 2SD1862 (ATV TV2) I (i B to 2 b c o m p le m e n ta ry p a ir w ith 2 S B 1 2 4 0

2iy transistor

Abstract: 2SD1227M
Contextual Info: h -? > v $ /Transistors 2SD1227M/2SD1862 2SD1227M 2SD1862 Xk°2*'>7^7°U-tfêNPN y bÿ>v*$ Epitaxil Planar NPN Silicon Transistor /Medium Power Amp. • £1-Jfi'+;£Eil/Dimensions Unit : mm 1) P c = l W i: ± # i'„ 2SD1227M 2SD1862 r 2.5 ± 0.2 6.8 i 0.2

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SB1232

Abstract: 2SB1240 2SB1255 2SB1223 2SB1224 2SB1225 2SB1226 2SB1227 2SB1228 2SB1229
Contextual Info: - 82 - 5 Ta=25cC, *EPteTc=25'C Vcso Vc e o (V) (V) fu (A) (W) fó 4# tt (Ta=25'C) [*EP (3typ{È] hp Pc* (max) (uA) <W) VcB (V) (min) (max) Vc e (V) Ic/ I e (A) (max) (V) ' , —' (V) le (A) Ib (A) PD -70 -60 -4 2 20 -100 -40 2000 -2 -2 -1.5 -2 -2 -0.004

2SB909M

Abstract: 2SC5083 2SD2315 2sb1242 2SB1460 2501863 2SD1225M 2SA1548 2Sc4776 2SB1130
Contextual Info: ATR • ATV Approximately the same size as the TO -92 with up to 1 W power capability. Taped type for automated placement or bulk packaging available. Package , VcEO V ATV ATR A pplication ^VcES ^ V c E R Part No. - 2SA937AMLN L ow Noise 2SA937AM Pre Am p

2SB911M

Abstract: 2SB1240
Contextual Info: h 7 > y Z 5 t / T ransistors 2 S B 9 1 1 M A Q n j O A fl 2SB911M/2SB1240 x , =:e5l * > ' ' 7J l ' 7 ° l ' - J - B P N P y ' j 3 > h 7 > y 7 ^ Power Amp. Epitaxial Planar PNP Silicon Transistors • • ÿHfé-sJ’JÉBI/Dimensions Unit : mm 1) Pc = 1 W